請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/61711完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 王暉(Huei Wang) | |
| dc.contributor.author | Di-Sheng Siao | en |
| dc.contributor.author | 蕭諦賸 | zh_TW |
| dc.date.accessioned | 2021-06-16T13:10:26Z | - |
| dc.date.available | 2015-08-09 | |
| dc.date.copyright | 2013-08-09 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-07-31 | |
| dc.identifier.citation | REFERENCE
[1] Fisher, R., “60 GHz WPAN standardization within IEEE 802.15.3c,” in IEEE International Symposium on Signals, Systems and Electronics, 2007. [2] H. Asada, K. Bunsen, K. Matsushita, R. Murakami, B. Qinghong, A. Musa, T. Sato, T. Yamaguchi, R. Minami, T. Ito, K. Okada, and A. Matsuzawa, 'A 60 GHz 16Gb/s 16QAM low-power direct-conversion transceiver using capacitive cross-coupling neutralization in 65 nm CMOS,' in IEEE Solid State Circuits Conference (A-SSCC), 2011 Asian, 2011, pp. 373-376. [3] Wireless LAN at 60 GHz – IEEE 802.11 ad Explained, Agilent Technologies. [4] A. Tessmann et al. “Metamorphic HEMT MMIC and modules for use in a high-bandwidth 210 GHz radars,” IEEE J. Solid-State Circuits, vol. 43, no. 10, pp. 2194-2205, Sep. 2008. [5] M. Urteaga et al., “G-band (140-220-GHz) InP-based HBT amplifiers,” IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1451-1456, Sep. 2003. [6] L. Samoska et al., “A 20 mW, 150GHz InP HEMT MMIC power amplifier module,” IEEE Microwave Wireless Compon. Lett., vol. 14, no. 2, pp. 56-58, Feb. 2004. [7] V.-K. Paidi et al., “G-band (140–220 GHz) and W-band (75–110 GHz) InP DHBT medium power amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 53, no. 2, pp. 598-605, Feb. 2005. [8] V. Radisic et al., “Power amplification at 0.65 THz using InP HEMTs,” IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 724–729, March. 2012. [9] C.-H. Lai, Y. Kambayashi, and M. Fujishima, “60-GHz CMOS down-conversion mixer with slow-wave matching transmission lines,” in Asian Solid-State Circuits Conf., Nov. 2006, pp. 195–198. [10] B. M. Motlagh, S. E. Gunnarsson, M. Ferndahl, and H. Zirath, “Fully integrated 60-GHz single-ended resistive mixer in 90-nm CMOS tech-nology,” IEEE Microw. Wireless Compon. Lett., vol. 16, no. 1, pp. 25–27, Jan. 2006. [11] W.-H. Lin, W.-L. Chang, J.-H. Tsai, and T.-W. Huang, “A 30–60 GHz CMOS sub-harmonic IQ de/modulator for high data-rate communi-cation system applications,” in IEEE Radio Wireless Symp. Dig., Jan. 2009, pp. 462–465. [12] H.-Y. Chang, P.-S. Wu, T.-W. Huang, H. Wang, C.-L. Chang, and J. G. J. Chern, “Design and analysis of CMOS broadband compact high-linearity modulators for gigabit microwave/millimeter-wave applica-tions,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 20–30, Jan. 2006. [13] H.-Y. Chang, S.-H. Weng, and C.-C. Chiong, “A 30–50 GHz wide modulation bandwidth bidirectional BPSK demodulator modulator with low LO power,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 5, pp. 332–334, May 2009. [14] M.-D. Tsai and H. Wang, “A 0.3–25-GHz ultra-wideband mixer using commercial 0.18- m CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 14, no. 11, pp. 522–524, Nov. 2004. [15] C.-S. Lin, P.-S. Wu, H.-Y. Chang, and H. Wang, “A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13- m CMOS technology,” IEEE Mi-crow. Wireless Compon. Lett., vol. 16, no. 5, pp. 293–295, May 2006. [16] J.-H. Tsai, P.-S. Wu, C.-S. Lin, T.-W. Huang, J. G. J. Chern, W.-C. Huang, and H. Wang, “A 25–75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 17, no. 4, pp. 247–249, Apr. 2007. [17] Scott K. Reynolds, “A 60-GHz superheterodyne downconversion mixer in silicon-germanium bipolar technology,” IEEE J. Solid-State Circuits, vol. 39, no. 11, pp. 2065–2068, November. 2004. [18] F. Zhang, E. Skafidas, and W. Shieh, “A 60-GHz double-balanced Gilbert cell down-conversion mixer on 130-nm CMOS,” in IEEE RFIC Symp. Dig., Jun. 2007, pp. 141–144. [19] F. Zhang, E. Skafidas, and W. Shieh, “60 GHz double balanced up-con-version mixer on 130 nm CMOS technology,” IEEE Electron. Lett., vol. 44, no. 10, pp. 633–634, May 2008. [20] I. C. H. Lai, Y. Kambayashi, and M. Fujishima, “50 GHz double-balanced up-conversion mixer using CMOS 90 nm process,” in IEEE Int. Circuits Syst. Symp., May 2007, pp. 2542–2545. [21] P.-C. Huang, R.-C. Liu, J.-H. Tsai, H.-Y. Chang, H. Wang, J. Yeh, C.-Y. Lee, and J. Chern, “A compact 35-65 GHz upconversion mixer with integrated broadband transformers in 0.18- m SiGe BiCMOS technology,” in IEEE RFIC Symp. Dig., Jun. 2006. [22] C.-C. Tang, W.-S. Lu, L.-D. Van, and W.-S. Feng, “A 2.4-GHz CMOS down-conversion doubly balanced mixer with low supply voltage,” in IEEE Int. Circuits Syst. Symp., May 2001, vol. 4, pp. 794–797. [23] L. Liu and Z. Wang, “Analysis and design of a low-voltage RF CMOS mixer,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 53, no. 3, pp. 212–216, Mar. 2006. [24] H.-H. Hsieh and L.-H. Lu, “Design of ultra-low-voltage RF frontends with complementary current-reused architectures,” IEEE Trans. Mi-crow. Theory Tech., vol. 55, no. 7, pp. 1445–1458, Jul. 2007. [25] C. Hermann, M. Tiebout, and H. Klar, “A 0.6-V 1.6-mW trans-former-based 2.5-GHz downconversion mixer with 5.4-dB gain and 2.8-dBm IIP3 in 0.13- m CMOS,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 488–495, Feb. 2005. [26] L. A. MacEachern, E. Abou-Allam, L. Wang, and T. Manku, “Low voltage mixer biasing using monolithic integrated transformer DC-coupling,” in IEEE Int. Circuits Syst. Symp., May 1999, vol. 2, pp. 180–183. [27] J.-H. Tsai, “Design of 1.2 V broadband, high data-rate MMW CMOS I/Q modulator and demodulator using modified Gilbert-cell mixer,” IEEE Trans. Microw. Theory Techn., vol. 59, no. 5, pp. 1350–1360, May 2011. [28] F. Ellinger, U. Jorges, U. Mayer, and R. Eickhoff, “Analysis and compensation of phase variations versus gain in amplifiers verified by SiGe HBT cascode RFIC,” IEEE Trans. Microw. Theory Tech., vol. 57, no. 8, pp. 1885–1894, Aug. 2009. [29] D. Roques, J. Cazaux, and M. Pouysengur, “A new concept to cancel insertion phase variation in MMIC amplitude controller,” in Proc. IEEE Symp. Microwave and Millimeter-Wave Monolithic Circuits, May 1990, pp. 59–62. [30] H. Takasu, C. Sakakibara, M. Okumura, and S. Kamihashi, “S-band MMIC digital attenuator with small phase variation,” in Proc. IEEE Asia-Pacific Microwave Conf., Dec. 1999, pp. 421–424. [31] S. Walker, “A low phase shift attenuator,” IEEE Trans. Microw. Theory Tech., vol. 42, no. 2, pp. 182–185, Feb. 1994. [32] U. Mayer et al., “Analysis and reduction of phase variations of variable gain amplifiers verified by CMOS implementation at C-band,” IET, Circuits, Device, Syst., vol. 4, no. 5, pp. 433–439, Sep. 2010. [33] B. Min and G. M. Rebeiz, “Single-ended and differential Ka-band BiCMOS phased array front-ends,” IEEE J. Solid-State Circuits, vol. 43, no. 10, pp. 2239–2250, Oct. 2008. [34] F. Ellinger, U. Lott, and W. Bachtold, “An antenna diversity MMIC vector modulator for HIPERLAN with low power consumption and calibration capability,” IEEE Trans. Microw. Theory Tech., vol. 49, no. 5, pp. 964–969, May 2001. [35] Chul Woo Byeon, In Sang Song, Seong Jun Cho, Hong Yi Kim, Chaejun Lee, and Chul Soon Park, “A 60 GHz variable gain amplifier with a low phase imbalance in 0.18 μm SiGe BiCMOS technology” in IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp. 1–4, Oct. 2012. [36] A. Tessmann et al. “Metamorphic HEMT MMIC and modules for use in a high-bandwidth 210 GHz radars,” IEEE J. Solid-State Circuits, vol. 43, no. 10, pp. 2194-2205, Sep. 2008. [37] M. Urteaga et al., “G-band (140-220-GHz) InP-based HBT amplifiers,” IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1451-1456, Sep. 2003. [38] L. Samoska et al., “A 20 mW, 150GHz InP HEMT MMIC power amplifier module,” IEEE Microwave Wireless Compon. Lett., vol. 14, no. 2, pp. 56-58, Feb. 2004. [39] V.-K. Paidi et al., “G-band (140–220 GHz) and W-band (75–110 GHz) InP DHBT medium power amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 53, no. 2, pp. 598-605, Feb. 2005. [40] V. Radisic et al., “Power amplification at 0.65 THz using InP HEMTs,” IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 724–729, March. 2012. [41] Z. Xu et al., “200 GHz CMOS amplifier working close to device fT,” Electronic Letters, vol. 47, no. 1, pp. 639-641, 2011 [42] Omeed Momeni, “A 260 GHz amplifier with 9.2dB gain and -3.9dBm saturated power in 60nm CMOS,” in ISSCC Dig. Tech. Papers, pp. 140-142, Feb. 2013. [43] P.-H. Chen et al. “A 110-180 GHz broadband amplifier in 65-nm CMOS process,” accepted to present in IEEE MTT-S Int. Microw. Symp., Jun. 2013. [44] David M. Pozar, Microwave Engineering, 3rd edition, Wiley, 2005. [45] Behzard Razavi, RF Microelectronics, 2nd edition, Pearson, 2012. [46] B. Gilbert, “A precise four-quadrant multiplier with subnanosecond response,” IEEE J. Solid-State Circuit, vol. 3, no. 4, pp. 365-373, Dec. 1968. [47] C.-H. Lien, P.-C. Huang, K.-Y. Kao, K.-Y. Lin, and H. Wang, “60 GHz double-balanced gate-pumped down-conversion mixers with a combined hybrid on 130-nm CMOS processes,” IEEE Microw. Wireless Compon. Lett., vol. 20, no. 3, pp. 160–162, Mar. 2010. [48] J. J. Kuo, Z. M. Tsai, K. Y. Lin, and H. Wang, “Design and analysis of novel linearization technique of cascode cell in a 60-GHz CMOS demodulator,” IEEE Trans. Microw. Theory Tech., vol. 59, no. 2, pp. 456–465, Feb. 2011. [49] J. J. Kuo, W.-H. Lin, C.-C. Kuo, J. Tseng, Z.-M. Tsai, K.-Y. Lin, and H. Wang, “A 71-76 GHz set for wireless communication in 65-nm CMOS technology,” in IEEE MTT-S Int. Mircro. Symp. Dig., pp. 189-192, Jun. 2009. [50] J. Xiao, I. Mehr, and J. Silva-Martinez, “A high dynamic range CMOS variable gain amplifier for mobile DTV tuner,” IEEE J. Solid-State Circuits, vol. 42, no. 2, pp. 292–301, Feb. 2007. [51] S. Hauptmann, F. Ellinger, F. Korndoerfer, and C. Scheytt, “V-band variable gain amplifier applying efficient design methodology with scalable transmission lines,” IEL Circuit Devices Systems, vol. 4, Iss. 1, pp. 24-29, Jan. 2010. [52] C.-Y. Hsieh, J.-C. Kao, J.-J. Kuo, and K.-Y. Lin, “A 57-64 GHz low-phase-variation variable-gain amplifier,” IEEE MTT-S Int. Mircro. Symp. Dig., June 2012. [53] Chul Woo Byeon, In Sang Song, Seong Jun Cho, Hong Yi Kim, Chaejun Lee, and Chul Soon Park, “A 60 GHz variable gain amplifier with a low phase imbalance in 0.18 μm SiGe BiCMOS technology,” in IEEE Compound Semiconductor Integrated Circuit Symp., pp., Oct. 2012. [54] A. Natarajan, S. Nicolson, M.-D. Tsai, and B. Floyd, “A 60 GHz variable-gain LNA in 65nm CMOS,” in ASSCC Symp. Dig., pp. 117-120., Nov. 2008. [55] J.-L. Kuo, Yi-Fong Lu, Ting-Yi Huang, Yi-Long Chang, Yi-Keng Hsieh, Pen-Jui Peng, I.-Chih Chang, Tzung-Chuen Tsai, Kun-Yao Kao, Wei-Yuan Hsiung, James Wang, Yungping Alvin Hsu, Kun-You Lin, Hsin-Chia Lu, Yi-Cheng Lin, Liang-Hung Lu, Tian-Wei Huang, Ruey-Beei Wu, and Huei Wang,, “60-GHz four-element phased-array transmit/receive system-in-package using phase compensation techniques in 65-nm flip-chip CMOS process” IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 743–756, March 2012. [56] Y.-K. Hsieh, J.-L. Kuo, H. Wang, and L.-H. Lu, “A 60-GHz broadband low-noise amplifier with variable-gain control in 65 nm CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 21, Iss. 11, pp. 610-612, Nov. 2011. [57] Wei-Tsung Li, Yun-Chieh Chiang, Jeng-Han Tsai, Hong-Yuan Yang, Jen-Hao Cheng, and Tian-Wei Huang, “60-GHz 5-bit phase shifter with integrated VGA phase-error compensation” IEEE Trans. Microw. Theory Tech., vol. 61, no. 3, pp. 1224–1235, March 2013. [58] M. Seo et al., “A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines,” in ISSCC Dig. Tech. Papers, pp. 484-485, Feb. 2009. [59] Z. Xu et al., “A compact, fully differential D-band CMOS amplifier in 65nm CMOS,” in ASSCC, Nov. 2010. [60] H.-H. Hsieh and L.-H. Lu, “A 40-GHz low-noise amplifier with a positive-feedback network in 0.18- m CMOS,” IEEE Trans. Microw. Theory Tech., vol. 57, no. 8, pp. 1895–1902, Aug. 2009. [61] Z. Xu, Q.J. Gu and M.-C.F. Chang, “200 GHz CMOS amplifier working close to device fT,” Electronic Letters, vol. 47, no. 1, pp. 639-641, 2011 [62] Omeed Momeni, “A 260 GHz amplifier with 9.2dB gain and -3.9dBm saturated power in 60nm CMOS,” in ISSCC Dig. Tech. Papers, pp. 140-142, Feb. 2013. [63] P.-H. Chen, Jui-Chih Kao, Tian-Li Yu, Yao-Wen Hsu, Yu-Ming Teng, Guo-Wei Huang, and Huei Wang, “A 110-180 GHz broadband amplifier in 65-nm CMOS process,” in IEEE MTT-S Int. Microw. Symp., Jun. 2013. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/61711 | - |
| dc.description.abstract | 本論文包含兩部分，第一部分呈現在V頻段收發機中兩個關鍵元件。一個使用TSMC先進65奈米互補式金氧半場效電晶體製程之60 GHz頻段下的雙平衡吉爾伯特單元降頻混波器，達到約1 dB的轉換增益，這個混頻器使用了寬頻的馬遜式平衡與不平衡轉換器以及一個RC迴授中頻放大器使節省VDD的電壓頭部空間。另一個元件為60 GHz頻段下的低相位變化的可變增益放大器，同樣使用TSMC先進65奈米互補式金氧半場效電晶體製程。利用電流控制架構(Current-Steering)與分割式疊接電晶體(Splitting-Cascode)相反的相位趨勢來達到相位的補償，這個低相位變化的可變增益放大器在31 dB的增益可調範圍下相位變化小於 ，3-dB頻寬為50至70 GHz而最高的增益為21 dB。
第二部分呈現一個使用增益提高(Gain-Boosted)技術與疊接電晶體組態(Cascode)之190 GHz金氧互補式半導體單晶微波積體電路放大器，這個放大器利用增益提高(Gain-Boosted)技術將在190 GHz的最大穩定增益(Maximum Stable Gain, MSG)提高。這個放大器的晶片面積為0.73 × 0.63 mm2使用TSMC標準RF 65奈米互補式金氧半場效電晶體製程，3-dB頻寬為188至192 GHz而最高的增益為16.3 dB。 | zh_TW |
| dc.description.abstract | This thesis includes two parts. The first part presents two important components in V-band transceiver. A 57-66 GHz double-balanced Gilbert-cell down conversion mixer implemented in TSMC 65-nm CMOS process, achieving about 1 dB conversion gain. It utilizes the broadband marchand-type-balun with a RC feedback IF amplifier to save the headroom voltage of VDD. Another component is a 57-66 GHz low phase variation variable gain amplifier also in TSMC 65-nm CMOS process. The phase compensation is achieved by using the different trends of phase between current-steering and splitting-cascade topology. This variable gain amplifier has a phase variation lower than with 31 dB gain control range. The 3-dB bandwidth is from 50 to 70 GHz with peak gain of 21 dB.
In the second part, a 190-GHz CMOS MMIC amplifier with cascode and gain-boosted techniques is presented. The amplifier utilizes gain-boosted technique to enhance the maximum stable gain (MSG) at 200 GHz. This amplifier is fabricated in standard RF 65-nm CMOS process with chip area of 0.73 × 0.63 mm2. The 3-dB bandwidth is from 188 to 192 GHz with 16.3 dB peak gain. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T13:10:26Z (GMT). No. of bitstreams: 1 ntu-102-R00942007-1.pdf: 12538882 bytes, checksum: 4cde908e084050ea458db2886969a2b3 (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | CONTENTS
口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vi LIST OF TABLES xv Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 2 1.2.1 Millimeter Wave Mixer 2 1.2.2 Variable Gain Amplifier 3 1.2.3 G-band Amplifier 4 1.3 Contributions 5 1.4 Organization of this Thesis 6 Chapter 2 Designs of V-band Gilbert Cell Down Conversion Mixer Using 65-nm CMOS Technology 7 2.1 Concept of Frequency Mixing and Design Parameters of Mixers 8 2.2 Double-Balanced Mixer [45] 12 2.3 Circuit Design 14 2.4 Experimental Results 23 Chapter 3 Design of V-band Low Phase Variation Variable Gain Amplifier Using 65-nm CMOS Technology 29 3.1 Design Concepts 30 3.1.1 Current-Steering Technique 30 3.1.2 Phase Analysis of Current-Steering Technology 31 3.1.3 Splitting-Cascode Technology [48] 41 3.1.4 Phase Analysis of Splitting-Cascode Technique 43 3.1.5 Phase Analysis of Phase Compensation Technique 54 3.2 Circuit Implementation 58 3.3 Experimental Results 65 Chapter 4 A 190-GHz Amplifier with Cascode and Gain-Boosted Architectures Using 65-nm CMOS Technology 75 4.1 Concept of Gain-Boosted Technique 75 4.2 Circuit Implementation 79 4.3 Experimental Results 89 4.4 Discussions 92 Chapter 5 Conclusions 96 REFERENCE 98 | |
| dc.language.iso | zh-TW | |
| dc.subject | G頻段放大器 | zh_TW |
| dc.subject | 金氧半場效電晶體 | zh_TW |
| dc.subject | 吉爾伯特單元 | zh_TW |
| dc.subject | 可變增益放大器 | zh_TW |
| dc.subject | variable gain amplifier | en |
| dc.subject | CMOS | en |
| dc.subject | G-band amplifier | en |
| dc.subject | Gilbert-cell | en |
| dc.title | 毫米波60-GHz關鍵元件與190-GHz放大器之研製 | zh_TW |
| dc.title | Design and Analysis of Millimeter-Wave 60-GHz Key Components and 190-GHz Amplifier | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃天偉(Tian-Wei Huang),林坤佑(Kun-You Lin),蔡作敏(Zuo-Min Tsai),張鴻埜(Hong-Yeh Chang) | |
| dc.subject.keyword | 金氧半場效電晶體,吉爾伯特單元,可變增益放大器,G頻段放大器, | zh_TW |
| dc.subject.keyword | CMOS,Gilbert-cell,variable gain amplifier,G-band amplifier, | en |
| dc.relation.page | 105 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2013-07-31 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-102-1.pdf 未授權公開取用 | 12.25 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。