請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/60682
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 李君浩(Jiun-Haw Lee) | |
dc.contributor.author | Zong-Xin Wang | en |
dc.contributor.author | 汪宗信 | zh_TW |
dc.date.accessioned | 2021-06-16T10:25:55Z | - |
dc.date.available | 2018-08-22 | |
dc.date.copyright | 2013-08-22 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-08-15 | |
dc.identifier.citation | 1 J. Zhao et al., Appl. Phys. Lett. 73, 1991 (1998)
2 G.J. Bauhuis et al., Sol. Energy Mater. Sol. Cells. 93, 1488 (2009) 3 A.W. Bett et al., Presented at the 24th European Photovoltaic Solar Energy Conference and Exhibition (2009) 4 B.A. Andersson et al., Prog. Photovolt: Res. Appl. 8, 61 (2000) 5 A.M. Hermann et al., Sol. Energy Mater. Sol. Cells. 55, 75 (1998) 6 P. D. Paulson et al., J. Appl. Phys. 94, 879 (2003) 7 P. Jackson et al., Prog. Photovolt: Res. Appl. 19, 894 (2011) 8 A. Chirila et al., Nat. Mater. 10, 857 (2011) 9 E. Wallin et al., Prog. Photovolt: Res. Appl. 20, 851 (2012) 10 U.P. Singh et al., Int. J. Photoenergy, 2010, 468147 (2010) 11 S. Ishizuka et al., Appl. Phys. Lett. 93, 124105 (2008) 12 S. Rampino et al., Appl. Phys. Lett. 101, 132107 (2012) 13 D. Lincot et al., Electrochem. Soc. 140, 12 (1993) 14 M.A. Contreras et al., Prog. Photovolt: Res. Appl. 7, 311 (1999) 15 N. Naghavi et al., Prog. Photovolt: Res. Appl. 18, 411 (2010) 16 D. Rudmann et al., Appl. Phys. Lett. 84, 1129 (2004) 17 K. Granath et al., Thin Solid Films. 361-362, 9 (2000) 18 W.J. Tsai et al., Thin Solid Films. 519, 1712 (2010) 71 19 M. Ruckh et al., Sol. Energy Mater. Sol. Cells. 41-42, 335 (1996) 20 P.T. Erslev et al., Thin Solid Films. 517, 2277 (2009) 21 R. Caballero et al., Prog. Photovolt: Res. Appl. 19, 547 (2011) 22 H. Yue et al., J. Vac. Sci. Technol. B. 29, 3 ( 2011) 23 W.W. Hsu et al., Appl. Phys. Lett. 100, 023508 (2012) 24 M.T. Sheldon et al., Adv. Energy Mater. 2, 339 (2012) 25 T. Walter et al., Solid State Phenom. 309, 51 (1996) 26 U. Rau et al., Solid State Commun. 107, 59 (1998) 27 S.H. Wei et al., Appl. Phys. Lett. 72, 3199 (1998) 28 S.H. Wei et al., J. Appl. Phys. 78, 3846 (1995) 29 C. Delerue et al., Sol. Energy Mater. Sol. Cells. 67, 83 (2009) 30 M. Lannoo et al., J. Lumin. 70, 170 (1996) 31 S.D. Russell et al., J. Electron Micr. Tech. 2, 489 (1985) 32 D.K. Schroder et al., Semiconductor Material and Device Characterization, Wiley: New York, 490–494. (1990) 33 P.J. Dean et al., Progress in Solid State Chemistry. 8, (1973) 34 M. Udai et al., J. Electron. Spectrosc. and Related Phenonm. 88, 767 (1998) 35 Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, edited by D. Briggs and J.T. Grant. IM Publications and Surface 72 Spectra Limited (2003). 36 Standard ASTM G173-03. Available online: http://www.astm.org/DATABASE.CART/HISTORICAL/G173-03.htm | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/60682 | - |
dc.description.abstract | 這篇論文的主旨為降低銅銦硒太陽能模組製造時, 由切割步驟造
成表面載子複合造成的損耗, 首先利用硫化三正辛基磷於銅銦硒薄膜 上做表面處理, 由光致激發的研究, 得知硫化三正辛基磷有助於降低 表面載子複合, 主要是因為表面的銦與硫鍵解成為三銦化二硫以及鈉 擴散的影響, 降低銅銦硒薄膜上的缺陷, 接著將硫化三正辛基磷用在 處理銅銦硒太陽能電池的切割處, 太陽能電池的開路電壓, 短路電流 以及填充率均有所改善, 故硫化三正辛基磷可以用於提升整個太陽能 模組的效率, 最後再引入硒化三正辛基磷, 碲化三正辛基磷來處理銅 銦硒薄膜太陽能電池的切割處, 但是電池的效率沒有被改善, 原因在 於溶液可能對於吸收層以外的材料造成負面影響 | zh_TW |
dc.description.abstract | The objective of this thesis is to reduce the surface carriers
recombination loss in CuInSe2 (CIS) solar module caused by scribing damage. A solution passivation method with trioctlyphosphine sulfur (TOP:S) were introduced for CIS device. From PL study, TOP:S exhibits an effective passivation for the reduction of surface carriers recombination, mainly due to indium bonded with sulfur on the surface as well as sodium diffusion on the surface to reduce carries trap. TOP:S was used to passivate the damage scribe on the CIS solar cells. It improved open circuit voltage, short current density and fill of the device. TOP:S shows excellent passivation for the damage scribe and it could be used to improve the whole module efficiency. TOP:Se and TOP:Te were also introduced to passivate the scribe on CIS solar cell. However, both show poor ability to repair the damage. Negative influence might result from the interaction between TOP:(Se or Te) and other materials of CIS solar cells. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T10:25:55Z (GMT). No. of bitstreams: 1 ntu-102-R99941114-1.pdf: 1211793 bytes, checksum: 3870f9968a3ddc6579804b07194637bd (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 口試委員會審定書....................................................................................... #
誌謝................................................................................................................ i 摘要...............................................................................................................ii ABSTRACT................................................................................................. iii Acknowledgement........................................................................................ iv CONTENTS .................................................................................................. v LIST OF FIGURES...................................................................................... ix LIST OF TABLES........................................................................................ xi Chapter 1 Introduction............................................................................. 1 1.1 Introduction................................................................................... 1 1.2 Introduction of Solar Cells............................................................ 2 1.3 CIGS Solar Cells........................................................................... 4 1.3.1 Device structure .................................................................... 4 1.3.2 Light Absorber Layer............................................................ 5 1.3.3 Buffer Layer.......................................................................... 6 1.3.4 Substrate and Alkali Incorporation into CIGS film.............. 8 1.3.5 Passivation ............................................................................ 9 1.4 Basic Principle ............................................................................ 11 1.4.1 Bandgap Variation of CIGS ................................................ 11 vi 1.4.2 Band Structure .................................................................... 12 1.4.3 Photoluminescence ............................................................. 14 1.4.4 Power Conversion Efficiency ............................................. 16 Chapter 2 Experiment ............................................................................ 19 2.1 Introduction................................................................................. 19 2.2 Experiment .................................................................................. 20 2.2.1 Trioctlyphosphine ............................................................... 20 2.2.2 Fabrication of CuInSe2 Solar Cells..................................... 20 2.3 Measurement Systems ................................................................ 23 2.3.1 Scanning Electron Microscope ........................................... 23 2.3.2 Photoluminescence Measurement ...................................... 25 2.3.3 Photoemission Spectra........................................................ 26 2.3.4 X-ray Photoelectron Spectroscopy ..................................... 28 2.3.5 Measurement of Power Conversion Efficiency of Solar Cells .................................................................................... 30 Chapter 3 CuInSe2 Surface Passivation with TOP:S .......................... 31 3.1 Introduction................................................................................. 31 3.2 Surface Passivation with TOP:S at Room Temperature ............. 32 3.2.1 Cross section view of CIS film with and without TOP:S passivation........................................................................... 32 3.2.2 PL comparison of CIS film with and without TOP:S vii passivation........................................................................... 33 3.2.3 XPS analysis ....................................................................... 34 3.3 Passivation with TOP:S at Different Temperature...................... 36 3.3.1 PL comparison between process temperature and time variation .............................................................................. 36 3.3.2 XPS analysis ....................................................................... 40 3.4 Scribe Passivation with TOP:S ................................................... 47 3.4.1 Scribe passivation on CuInSe2 thin film ............................. 47 3.4.2 Scribe passivation on CuInSe2 solar cells........................... 49 3.5 Planar Passivation ....................................................................... 51 3.6 Conclusion .................................................................................. 54 Chapter 4 Surface Passivation with TOP:(Se or Te)............................ 55 4.1 Introduction................................................................................. 55 4.2 PL of CIS film with TOP:(Se or Te) passivation ........................ 56 4.2.1 TOP:(Se or Te) passivation at different temperature .......... 56 4.2.2 Comparison of TOP, TOP:(S, Se or Te) and ALD Al2O3 passivation........................................................................... 58 4.3 Scribe passivation with TOP:(Se or Te)...................................... 60 4.4 Planar passivation comparison.................................................... 62 4.4.1 PL comparison with KCN treatment .................................. 63 4.4.2 Planar passivation with TOP:Se and TOP:Te ..................... 64 viii 4.5 Conclusion .................................................................................. 67 Chapter 5 Summary and Future Work................................................. 68 Reference..................................................................................................... 70 | |
dc.language.iso | zh-TW | |
dc.title | 硫化三正辛基磷表面處理銅銦硒薄膜製作之太陽能電池 | zh_TW |
dc.title | Surface Passivation of CuInSe2 Thin Film Solar Cells with Trioctlyphosphine Sulfide | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 沈昌宏(Chang-Hong Shen),陳錦地(Chin-Ti Chen),韓謝忱(Hsieh-Cheng Han) | |
dc.subject.keyword | 銅銦硒,太陽能,表面處理, | zh_TW |
dc.subject.keyword | CIS,Solar Cells,Passivation, | en |
dc.relation.page | 72 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-08-15 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-102-1.pdf 目前未授權公開取用 | 1.18 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。