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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 蔡坤諭(Kuen-Yu Tsai) | |
dc.contributor.author | Chun-Hung Liu | en |
dc.contributor.author | 劉俊宏 | zh_TW |
dc.date.accessioned | 2021-06-16T10:24:41Z | - |
dc.date.available | 2018-08-26 | |
dc.date.copyright | 2013-08-26 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-08-15 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/60649 | - |
dc.description.abstract | Electron-beam–direct-write lithography (EBDWL) is a promising patterning technique due to its negligible electron wave diffraction and maskless nature. Electron scattering degrading patterning fidelity makes proximity effect correction (PEC) necessary. Effectiveness of PEC relies on accurate knowledge of point spread function (PSF) describing absorbed energy distribution (AED) for representing proximity effects precisely. The PSF can be derived via parametric PSF calibration methods typically involving AED fitting. However, the existing method does not employ a systematical approach to obtain a new PSF form that is both compact and accurate when conventional PSF forms are not satisfactory. Only the AED fitting quality (rather than its patterning-prediction quality) is considered during the conventional method. This dissertation proposes a new parametric PSF calibration method to systematically obtain a PSF form comprising the smallest number of terms with a better combination of basis functions, and that optimizes pattern accuracy.
Several PEC methods are developed, which can be classified as dose, shape, and combination of dose and shape modulations (i.e., hybrid modulation). Furthermore, these methods can be divided into rule-, model-based, and combination of rule- and model-based approaches (i.e., hybrid approach). However, PEC methods with dose and hybrid modulations tend to need extremely high computational complexity, which is not suitable to achieve full-chip nanometer integrated circuit (IC) manufacturing. In addition, electron scattering interaction between features is not fully considered by rule-based and hybrid-based PEC methods due to their rule-based nature. Therefore, this dissertation proposes a fully model-based PEC method with shape modulation based on optical proximity correction technique, which is relatively applicable to achieve full-chip nanometer IC manufacturing and high correction accuracy. Recently, a new PSF form using a promising PSF calibration method has been developed to more accurately characterize the electron scattering. However, influences of adopting the conventional and new PSF forms for the usage of patterning practical circuit layouts have not been intensively studied. This dissertation extensively investigates impacts of PSF accuracy on patterning prediction and PEC under different resist thickness conditions suitable for various half-pitch nodes, where critical features of practical circuit layouts are used to quantitatively evaluate their performance. In addition, patterning fidelity limitation suffered from proximity effects is examined to determine whether PEC should be applied. EBDW lithography suffers from the low-throughput issue. Although throughput can be improved with lower accelerating voltages and larger beam spot sizes (BSSs) due to increased resist sensitivity and higher permitted current respectively, patterning fidelity is degraded since short-range proximity effects are relatively prominent. Recently, an innovative fully model-based PEC method using edge placement error (EPE) values for correction has been developed to address issues with extremely high computational complexity and potentially low correction efficiency, called EPE-PEC method. However, effectiveness of this method could become insufficient since the EPE values may not be exactly evaluated under larger BSS conditions. An improved fully model-based PEC method directly adopting intensity information (rather than EPE values) is proposed to overcome problems of the EPE-PEC method. Finally, effectiveness of the EPE-PEC method is preliminarily evaluated by experiments, which includes calibration and validation of patterning-prediction model and calculation, implementation, and validation of PEC results. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T10:24:41Z (GMT). No. of bitstreams: 1 ntu-102-D94921003-1.pdf: 5568583 bytes, checksum: 5230fd4fab802d83be6e729fb0bf9642 (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | Acknowledgements i
Abstract v Statement of Original Contributions vii Table of Contents ix List of Figures xiii List of Tables xxii Chapter 1 Introduction 1 1.1 Electron-beam Lithography Patterning 1 1.2 Electron Proximity Effect Modeling 3 1.3 Electron Proximity Effect Correction 4 1.4 Overview of the Dissertation 7 1.5 Organization of the Dissertation 9 Chapter 2 A New Parametric Point Spread Function Calibration Method for Improving the Accuracy of Patterning Prediction 11 2.1 Motivation 11 2.2 Design of the New Parametric PSF Calibration Method 16 2.3 Application of the New Parametric PSF Calibration Method at 5 keV 21 2.4 Improvements of the Fidelity by Using the New Method 30 2.4.1 Improvements in Fitting Accuracy 30 2.4.2 Improvements in Patterning-prediction Accuracy 34 2.4.3 Improvements in Patterning Sensitivity 42 2.5 Discussion of PSF Forms at Different Accelerating Voltages 44 Chapter 3 Fully Model-Based Proximity Effect Correction Method 47 3.1 Motivation 47 3.2 Principle of Model-Based Proximity Effect Correction Method 51 3.2.1 Patterning Prediction 51 3.2.2 Feedback Compensation 53 3.2.3 Optimal Dosage Determination 55 3.3 Simulation Results and Discussion 56 Chapter 4 Impacts of Point Spread Function Accuracy on Patterning Prediction and Proximity Effect Correction 65 4.1 Motivation 66 4.2 Theoretical Concepts 68 4.2.1 Parametric Point Spread Function Forms 68 4.2.2 Patterning Prediction 70 4.2.3 Definition of Patterning Fidelity Limitation for Six-Transistor Static Random-Access Memory Cell Circuit Layouts 73 4.2.4 Proximity Effect Correction Approach 76 4.2.5 Indexes to Quantify Impacts of Point Spread Function Accuracy on Patterning Prediction and Proximity Effect Correction for Six-Transistor Static Random-Access Memory Cell Circuit Layouts 79 4.3 Simulation Results and Discussions 80 4.3.1 Simulation conditions 80 4.3.2 Fitting Accuracy of the Parametric Point Spread Functions 84 4.3.3 Examination of Patterning Fidelity Limitation 90 4.3.4 Impacts of Point Spread Function Accuracy on Patterning Prediction 93 4.3.5 Effectiveness and Requirement for Applying Proximity Effect Correction 98 4.3.6 Impacts of Point Spread Function Accuracy on Proximity Effect Correction 101 Chapter 5 A New Fully Model-Based Proximity Effect Correction Method for High-Throughput Electron-Beam–Direct-Write Lithography 107 5.1 Motivation 108 5.2 Theoretical Concepts 110 5.2.1 Patterning Prediction 110 5.2.2 Definition of Patterning Fidelity Limitation for Six-Transistor Static Random-Access Memory Cell Circuit Layouts 111 5.2.3 The New Fully Model-Based Proximity Effect Correction Method 113 5.2.4 Indexes to Quantify Effectiveness of the New Fully Model-Based Proximity Effect Correction Method for Six-Transistor Static Random-Access Memory Cell Circuit Layouts 121 5.3 Simulation Results and Discussions 121 5.3.1 Simulation Conditions 121 5.3.2 Examination of Patterning Fidelity Limitation 125 5.3.3 Effectiveness of the New Fully Model-Based Proximity Effect Correction Method 128 Chapter 6 Preliminarily Experimental Effectiveness Evaluation of the Fully Model-Based Proximity Effect Correction Method 139 6.1 Motivation 139 6.2 Theoretical Concepts of the Evaluation Process 142 6.2.1 Calibration and Validation of Patterning-Prediction Model 142 6.2.2 Calculation, Implementation, and Validation of Proximity Effect Correction Results 149 6.3 Experimental Setup 151 6.3.1 Experimental Equipment 152 6.3.2 Experimental Procedure and Conditions 159 6.4 Experimental results and discussions 169 Chapter 7 Conclusions and Future Work 185 Bibliography 195 Vita 210 Publication List 211 | |
dc.language.iso | en | |
dc.title | 應用於全晶片奈米積體電路製造電子束微影臨近效應模型建立與修正方法之設計 | zh_TW |
dc.title | Design of Proximity Effect Modeling and Correction Methods for Electron-Beam Lithography with Applications in Full-Chip Nanometer Integrated Circuit Manufacturing | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 顏家鈺(Jia-Yush Yen),陳永耀(Yung-Yaw Chen),管傑雄(Chieh-Hsiung Kuan),張耀文(Yao-Wen Chang),陳政宏(Jeng-Horng Chen) | |
dc.subject.keyword | 點擴散函數,電子臨近效應修正,電子束微影,邊緣位置誤差,能量強度誤差,生產量,電子臨近效應修正之實驗性評量, | zh_TW |
dc.subject.keyword | point spread function,electron proximity effect correction,electron-beam lithography,edge placement error,intensity error,throughput,experimental evaluation of electron proximity effect correction, | en |
dc.relation.page | 217 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-08-15 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電機工程學研究所 | zh_TW |
顯示於系所單位: | 電機工程學系 |
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