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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/60452完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張培仁 | |
| dc.contributor.author | Cheng-Tao Ho | en |
| dc.contributor.author | 何政道 | zh_TW |
| dc.date.accessioned | 2021-06-16T10:18:34Z | - |
| dc.date.available | 2014-08-20 | |
| dc.date.copyright | 2013-08-20 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-08-16 | |
| dc.identifier.citation | [1] J. Zeng, M. Zhang, L. Wang and C. Lin, “Influence of lead titanate seed layer on orientation behavior and ferroelectrics of sol-gel derived PZT thin films, “J. Phys. Condens. Matter, Vol. 11, pp.1139(1999).
[2] B. P. Sheppard, “The challenge of ceramic machining continue,” Am Ceram. Soc. Bull, Vol. 71, pp.1590(1992). [3] G. H. Haertling, “ Ferroelectric thin films for electronic applications,” J. Vac. Sci. Technol.,Vol. 9, pp.414(1991). [4] Chen. Y, Chan. H L W, Choy. C L, “Pyroelectric properties of PbTiO3IP(VDF—TrFE) 0—3 nanocomposite films,” Thin Solid Films, Vol. 323, pp.270(1998). [5] H. Yi, Z. Wu and M. Sayer, “Preparation of Pb(Zr,Ti)O 3 thin-films by sol-gel processing — electrical, optical and electro-optic properties,” J. Appl. Phys, Vol 64, pp.2717(1988). [6] A. Rohalski, “Infrared detectors : status and trends,” Progress in Quantum Electronics, Vol. 27, pp.59(2003). [7] 巫瑞琪,”輻射溫度計”,碩士論文,國立中央大學光電科學研究所(1996). [8] Miiller, M, Budde, W., Gottfried-Gottfied, A, Huebel, R, Jahne, R., and Kiick, H., “A thermoelectric Infrared Radiation Sensor with Monolithically Integrated Amplifier Stage and Temperature Sensor,” Sensors and Cctuators A, Vol. 54, pp.601(1996). [9] Lenggenhager, R., “CMOS Thermoelectric Infrared Sensors, “Physical Electronics Laboratory, ETHZ, Zurich, Diss ETH No. 10744(1994) [10] RW Whatmore, “Pyroelectric devices and materials,” Infrared Phys. Technol, Vol.49, pp.1335(1986). [11] C.P.Ye, T. Tamagawa, D.L. Polla, ”Experimental studies on Primary and Secondary Pyroelectric effects in Pb(ZrxTil-x)O3,PbTiO3, and ZnO thin Film,” Journal of Applied Physics, Vol. 70, pp.5538(1991). [12] W. Tjhen,T. Tamagawa, C. P. Ye, C. C. Hsueh, P. Schiller, and D. L. Polla, “Properties of Piezoelectric Thin Films for Micromechanical Devices and Systems,” Proceedings of IEEE Micro Electro Mechanical Systems, Vol. 30, pp.114(1991) [13] M. J. Madou, “Fundamentals of micro fabrication,” The Science of Miniaturization, CRC Press, 2nd ed,(2002) [14] K. Uchino, “Feffoelectric device,” Marcel Dekker(2000). [15] N. Chong, H. L. W. Chan, and C. L. Choy,”Pyroelectric Sensor Array for In-line Monitoring of Infrared Laser,” Sensors and Actuators A, Vol. 96, pp.231(2002). [16] X. He, K Yao, B. K. Gan, “Phase transition and properties of a ferroelectric poly(vinydene fluoride-hexafluoropropylene) copolymer,” Journal of applied physics Vol. 97, 084101(2005) [17] M. Wegener, J. Hesse, T. Wegerner, R. Gerhard-Multhaupt, “Patterned ferro-,pyro- and piezoelectricity in poly(vinylidene fluoride) by means of laser-induced irreversible β to α phase thansformation,” Journal of applied physics, Vol. 91, No.5(2002). [18] S. P. Bodhane, V. S. Shirodkar, “Change in crystallinity of poly(Vinylidene fluoride) due to thermal evaporation,” Journal of Applied Polymer Science, Vol.64, pp.225 (1996). [19] M.Benz, W. B. Eular, “Determination of the crystalline phase of poly(vinylidene fluoride) under different preparation conditions using differential scanning calorimetry and infrared spectroscopy,” Journal of applied polymer science, Vol.89, pp.1093 (2003). [20] S. Chopra, S. Sharma, T.C. Goel, R.G. Mendiratta, “Structure, dielectric and pyroelectric studies of Pb1-xCaxTiO3 thin films,” solid state communication , Vol.127,pp.299(2003). [21] 鄭世裕,”焦電材料特性及應用”,工研院材料所電子陶瓷材料及元件技術,p4-1~p4-24. [22] S. T. Liu and D. Long, “Pyroelectric Detectors and Materials,” Proceedings of IEEE, Vol. 66, No. 1 (1978) [23] B. Ploss, W. Y. Ng, H. L. W. Chan, B. Ploss, C. L. Choy, “Poling study of PZT/P(VDF-TrFE) composites,” Composites science and technology , Vol. 61, pp.957(2001). [24] 材綱編輯事/工研院材化所,”透明電極在各應用領域之性能要求”,材料世界網,2009/9/16. [25] Whatmore, R.W.,”Pyroelectric devices and materials,” Pep. Prog. Phys, Vol. 49, pp.1335(1986) [26] 赫士明,”漫談晶體結構學-從材料學說起”,正大印書館(1992). [27] 林麗娟,”X光繞射原理及其應用”,工業材料86期(1994). [28] Junjie Li, Qingjie Meng, Wenjing Li, Zhicheng Zhang,”Influence of crystalline properties on the dielectric and energy storage properties of poly(vinylidene fluoride),” Journa of applied polymer science, Vol. 122, pp.1659(2011). [29] Kobayashi, M.; Tashiro, K.; Tadokoro, H,” Poly(vinylidene fluoride),” Macromolecules, Vol. 8, pp.156(1957) [30] Latour, M.; Montaner, A.; Galtier, M.; Geneve`s, G. J Polym Sci Polym Phys Ed 1, Vol. 19, pp.1121(1981). [31] Petzelt, J.; Legrand, J. F.; Pacesova, S.; Kamba, S ,”Infrared spectroscopic investigation of chain conformations and interactions in P(VDF-TrFE)/PMMA blends,” Journal of Polymer Science Part B: Polymer Physics, Vol. 12, pp.305(1988). [32] Rinaldo Gregorio, JR, ”Effect of crystallization rate on the formation of the polymorphs of solution cast poly(vinylidene fluoride),” Elsevier polymer, Vol. 49, pp.4009(2008). [33] M. EI Achaby, F.Z. Arrakhiz, S. Vaudreuil, ”Piezoelectric β-polymorph formation and properties enhancement in grapheme oxide-PVDF nanocomposite films,” Elservier Applied Surface Science, Vol. 258, pp.7668(2012) [34] J Shang, Y Zhang, L Yu, B Shem,” Fabrication and dielectric properties of oriented polyvinylidene fluoride nanocomposites incorporated with graphene nanosheets,” Elservier Materials Chemistry and Physics, Vol. 134, pp.867(2012) | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/60452 | - |
| dc.description.abstract | 本文中利用焦電材料聚偏二氟乙烯Poly(vinylidene fluoride) (PVDF)為研究主體,並探討參雜不同重量百分比的氧化石墨烯(Graphene Oxide)於PVDF中對焦電性質之改良,目的為改善全透明軟性紅外線感測器之焦電響應。
過程中主要利用旋轉塗佈(Spin Coating)的方式來成膜,此方法的優點在於便宜、製成速度快,其缺點為薄膜多孔性。實驗中探討不同重量百分比濃度的PVDF對殘留極化率的影響。成膜後利用不同的退火溫度來探討結晶性質受溫度之影響,並利用XRD、FTIR來分析其最佳結晶溫度,後續對薄膜極化以改善其焦電性。找到最佳的結晶退火溫度及PVDF濃度後,利用摻雜不同重量百分比的氧化石墨烯來分別探討焦電性質的影響。 氧化石墨烯分散於PVDF中的均勻度好壞會影響到焦電響應,所以摻雜過程中使用超音波震盪來提升摻雜的均勻度,之後由掃描式電子顯微鏡(SEM)觀察下可發現分散情況良好。從XRD和FTIR檢測中發現,摻雜氧化石墨烯於PVDF有助於提升焦電性質,其中又以摻雜量為1wt%為最佳,於高摻雜量的情況下會造成漏電情況嚴重、脫膜現象產生、焦電響應下降,如摻雜1wt%氧化石墨烯的PVDF焦電流大小為摻雜量2wt%的3倍,比無摻雜氧化石墨烯的PVDF大 10倍。 | zh_TW |
| dc.description.abstract | In this study, we use pyroelectric material Poly(vinylidene fluoride)(PVDF) as research themes to produce transparent and flexible infrared thermal sensor. Then doping with different weight percentages of graphene oxide (GO) in PVDF to improve it’s pyroelectric properties.
The whole process to produce PVDF pyroelectric film is used by spin coating method. The advantages of this method are low cost and fast manufacture, but the main disadvantage is porosity of film. In experiment, I investigate the change of the polarization by different weight concentration of PVDF. Use XRD and FTIR to analyze the effect of different annealing temperatures on PVDF β- phase. After find out the best parameters of annealing temperature and PVDF concentration, doping different contents of graphene oxide into PVDF. The uniformity of graphene oxide dispersed in PVDF will affect the pyroelectric response, so the dispersion process using ultrasonic vibration to enhance the uniformity of dispersion. Followed by the scanning electron microscope (SEM) observation can be found in well dispersion. From the XRD and FTIR results found that disperse graphene oxide into PVDF can improve the pyroelectric characteristic and the ideal amount is 1 wt%. High dispersion amount will cause leakage, parting and low pyroelectric response. For instance, the signal experiment find that the quantity of pyroelectric current with graphene oxide doping amount 1wt% is three times larger than doping amount 2wt% and ten times larger than PVDF without doping. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T10:18:34Z (GMT). No. of bitstreams: 1 ntu-102-R00543042-1.pdf: 6389191 bytes, checksum: cee1494afed911f6de8198406d7f2650 (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | 口試委員會審定書 i
誌謝 ii 中文摘要 iii 英文摘要 iv 目錄 v 圖目錄 viii 表目錄 xi 第一章序論 1 1.1 前言 1 1.2 文獻回顧 3 1.2.1 紅外線感測器 3 1.2.2 焦電材料(Pyroelectric material) 4 1.2.3 聚偏二氟乙烯(polyvinylidene fluoride,PVDF) 5 1.2.4 壓電性(Piezoelectricity) 5 1.2.5 焦電性(Pyroelectricity) 6 1.2.6 鐵電性(Ferroelectricity) 6 1.2.7 極化處理(Poling Treatment) 6 1.2.8 透明導電薄膜 7 1.3 研究目的 8 第二章理論介紹 15 2.1 紅外線輻射 15 2.2 焦電效應 16 2.3 焦電響應 17 2.4 X-ray繞射儀 21 2.5 傅立葉轉換紅外光譜 22 第三章實驗方法 30 3.1 實驗設計 30 3.2 PVDF鐵電高分子薄膜製備 31 3.3 PVDF高分子薄膜熱處理(Heat treatment)流程 32 3.4 摻雜氧化石墨烯於PVDF鐵電高分子薄膜製備 33 3.5 氧化石墨烯分散於PVDF流程 34 3.6 PVDF鐵電高分子電極化處理流程 34 3.7 ITO/PET 基板清洗 35 3.8 旋轉塗佈系統 35 3.9 溶劑選擇 36 3.10 實驗設備與藥物清單 37 第四章結果與討論 38 4.1 PVDF鐵電高分子薄膜製備與多孔性現象改良 38 4.1.1 塗佈單層PVDF 38 4.1.2 塗佈多層PVDF 42 4.1.3 降低塗佈轉速塗佈單層PVDF 42 4.1.4 單層PVDF於真空中軟烤 45 4.1.5 塗佈轉速與膜厚關係 49 4.2 PVDF鐵電高分子之薄膜分析 51 4.2.1 利用XRD探討不同退火溫度下PVDF結晶性質 51 4.2.2 利用FTIR探討不同退火溫度下PVDF結晶性質 53 4.2.3 紫外光可見光吸收光譜 54 4.2.4 殘留極化率 55 4.2.5 極化處理 57 4.3 摻雜氧化石墨烯於PVDF鐵電高分子之薄膜分析 58 4.3.1 摻雜氧化石墨烯於10wt% PVDF 58 4.3.2 SEM觀察摻雜GO後PVDF的微結構 59 4.3.3 利用XRD探討不同退火溫度下PVDF/GO結晶性質 63 4.3.4 利用FTIR探討不同退火溫度下PVDF/GO結晶性質 64 4.3.5 紫外光可見光吸收光譜 64 4.3.6 塗佈轉速與PVDF/GO膜厚關係 65 4.4 焦電訊號量測 70 第五章結論與未來展望 72 5.1 結論 72 5.2 未來展望 73 參考文獻列表 74 | |
| dc.language.iso | zh-TW | |
| dc.subject | PVDF | zh_TW |
| dc.subject | 聚偏二氟乙烯 | zh_TW |
| dc.subject | 氧化石墨烯 | zh_TW |
| dc.subject | 焦電 | zh_TW |
| dc.subject | 軟性 | zh_TW |
| dc.subject | Graphene oxide | en |
| dc.subject | Pyroelectricity | en |
| dc.subject | Flexible | en |
| dc.subject | PVDF | en |
| dc.title | 摻雜氧化石墨烯於聚偏二氟乙烯之焦電特性探討 | zh_TW |
| dc.title | Study on the influence of graphene-oxdie doping in the pyroelectricity of Poly(vinylidene fluoride) | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 施文彬,戴慶良,胡毓忠 | |
| dc.subject.keyword | 聚偏二氟乙烯,PVDF,氧化石墨烯,焦電,軟性, | zh_TW |
| dc.subject.keyword | PVDF,Graphene oxide,Pyroelectricity,Flexible, | en |
| dc.relation.page | 77 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2013-08-17 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位: | 應用力學研究所 | |
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