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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電信工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/59690
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor林坤佑
dc.contributor.authorGuan-Jie Huangen
dc.contributor.author黃冠傑zh_TW
dc.date.accessioned2021-06-16T09:33:22Z-
dc.date.available2022-02-17
dc.date.copyright2017-02-17
dc.date.issued2017
dc.date.submitted2017-02-14
dc.identifier.citation[1] Y.-C. Chen, “Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process,” master thesis, National Taiwan University, August 2015.
[2] Y. Qin, S. Gao, and A. Sambell, “Broadband high-efficiency circularly polarized active antenna and array for RF front-end application,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 7, pp. 2910–2917, Jul. 2006.
[3] H. Kim and Y. J. Yoon, “Wideband design of the fully integrated transmitter front-end with high power added efficiency,” IEEE Trans. Microw. Theory Tech., vol. 55, no. 5, pp. 916–924, May 2007.
[4] C. H. Tsai, Y. A. Yang, S. J. Chung, and K. Chang, “A novel amplifying antenna array using patch-antenna couplers-design and measurement,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 8, pp. 1919–1926, Aug.2002.
[5] S. Pajic, Z. Popovic, “An efficient 16-element X-band spatial combiner of switched-mode power amplifiers,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 73, pp., July 2003.
[6] Y.-N. Jen, J.-H. Tsai, C.-T. Peng, and T.-W. Huang, “A 20 to 24 GHz +16.8 dBm fully integrated power amplifier using 0.18-μm CMOS process,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 1, pp.42-44, Jan. 2009.
[7] P.-C. Huang, J.-L. Kuo, Z.-M. Tsai, K.-Y. Lin, and H. Wang, “A 22-dBm 24-GHz power amplifier using 0.18-μm CMOS technology,” in Proc. IEEE MTT-S Int. Microw. Symp. Dig., May 2010, pp.248–251.
[8] C.-C. Hung, J.-L. Kuo, K.-Y. Lin, and H. Wang, “A 22.5-dB gain, 20.1-dBm output power K-band power amplifier in 0.18-μm CMOS process,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. Dig., May 2010, pp. 557–560.
[9] N.-C. Kuo, J.-C. Kao, C.-C. Kuo, and H. Wang, “K-band CMOS power amplifier with adaptive bias for enhancement in back-off efficiency,” in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2011, pp. 1–4.
[10] Y.-C. Hsu, Y.-S. Chen, T.-C. Tsai, and K.-Y. Lin, “A K-band CMOS cascade power amplifier using optimal bias selection methodology,” in Proc. Asia-Pacific Microw. Conf., Dec. 2011, pp. 793–796.
[11] Z.-M. Tsai, Y.-C. Wu, S.-Y. Chen, T. Lee, and H. Wang, “A V-band on-wafer near-field antenna measurement system using an ic probe station,” Antennas and Propagation, IEEE Transactions on, vol. 61, 2013.
[12] D. T. Paris, W. M. Leach, Jr.,and E. B. Joy, “Basic theory of probe-compensated near-field measurements,” IEEE Trans. Antennas Propag., vol. 56, no. 10, pp. 3241-3247, Oct. 2008.
[13] R. S. Elliott, Antenna Theory and Design, 2nd ed. Englewood Cliffs, NJ, USA: Prentice-Hall, Jan. 2003.
[14] Y.-C. Hsu, Y.-S. Chen, T.-C. Tsai, and K.-Y. Lin, “A K-band CMOS cascade power amplifier using optimal bias selection methodology,” in Proc. Asia-Pacific Microw. Conf., Dec. 2011, pp. 793–796.
[15] K.-Y. Kao, Y.-C. Hsu, K.-W. Chen and K.-Y. Lin, “Phase-Delay cold-FET pre-Distortion linearizer for millimeter-wave CMOS power amplifiers,” IEEE Trans. Microw. Theory Tech., vol. 61, no. 12, Dec. 2013.
[16] T.-C. Tsai, K.-Y. Kao, and K.-Y. Lin, “A K-band CMOS power amplifier with FET-type adpative-bias circuit,” in Proc. Asia-Pacific Microw. Conf., Nov. 2014, pp. 591-593.
[17] Y.-H. Hsiao, Z.-M. Tsai, H.-C. Liao, J.-C. Kao and H. Wang, “Millimeter-Wave CMOS power amplifiers with high output power and wideband performances,” IEEE Transactions on Microwave Theory and Techniques, vol.61, no.12, pp. 4520-4533, Dec. 2013.
[18] C. Y. Law and A.-V. Pham, “A high-gain 60 GHz power amplifier with 20 dBm output power in 90 nm CMOS,” in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers (ISSCC), Feb. 2010, pp. 426–427.
[19] E. Kaymaksut. D. Zhao, and P. Reynaer, “Transformer-Based Doherty Power Amplifiers for mm-Wave Applications in 40-nm CMOS,” IEEE Trans. Microwave Theory & Tech., vol. 63, no. 4, April 2002.
[20] S. Hu, S. Kousai, J. S. Park, O. L. Chlieh, and H. Wang, “Design of A Transformer-Based Reconfigurable Digital Polar Doherty Power Amplifier Fully Integrated in Bulk CMOS,” IEEE J. Solid-State Circuits , vol. 50 , no. 5 ,May 2008.
[21] I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, ' Distributed active transformer - a new power-combining and impedance-transformation technique,' IEEE Trans. Microwave Theory & Tech., vol. 50, no. 1, pp. 316-331, Jan. 2002.
[22] Peter Haldi et al., “ A 5.8 GHz 1 V Linear Power Amplifier Using a Novel On-Chip Transformer Power Combiner in Standard 90 nm CMOS ,” in 2008 IEEE JSSC ,May 2008.
[23] Steven C. Cripps, “RF power amplifier for wireless communications,” 2nd Edition 2006.
[24] K. H. An , 'Power-combining transformer techniques for fully-integrated cmos power amplifiers' , IEEE J. Solid-State Circuits , vol. 43 , no. 5 , pp.1064 -1075 , 2008
[25] C.-F. Chou, “Research of Wideband Microwave/Satellite Communications K-band Low-Noise Amplifier and Millimeter-Wave CMOS Power Amplifier with Wideband and High Efficiency Symmetric-Radial Power Combining,” master thesis, National Taiwan University, February 2016.
[26] Q. J. Gu , Z. Xu and M.-C.F. Chang , 'Two-way current-combining W-band power amplifierin 65-nm CMOS' , IEEE Trans. Microw.Theory Techn. , vol. 60 , no. 5 , pp.1365 -1374 , 2012.
[27] H.-S. Yang, J.-H. Chen, and Y.-J. Emery Chen,” A Wideband and Highly Symmetric Multi-Port Parallel Combining Transformer Technology”, IEEE Trans. Microw. Theory Techn, October 2015.
[28] J.-F. Yeh, J.-H. Tsai, and T.-W. Huang, “A 60 GHz power amplifier design using dual-radial symmetric architecture”, IEEE Trans. Microw. Theory Tech., vol. 61, no. 3, pp. 1280–1290, Mar. 2013.
[29] J. A. Jayamon, J. F. Buckwalter, and P. M. Asbeck, “Multigate-Cell Stacked FET Design for Millimeter-Wave CMOS Power Amplifiers”, IEEE Journal of Solid-State Circuits, vol. 51, no. 9, Sep. 2016.
[30] M. Fathi, D. K. Su, and B. A. Wooley, “A 30.3dBm 1.9GHz-Bandwidth 2×4-Array Stacked 5.3GHz CMOS Power Amplifier ,” in 2013 IEEE ISSC, February 2013.
[31] M. Fathi, D. K. Su., and B. A. Wooley, “A stacked 6.5-GHz 29.6-dBm power amplifier in standard 65-nm CMOS,” in 2010 IEEE CICC, 2010.
[32] H. Solar et al., “A Fully Integrated 26.5 dBm CMOS Power Amplifier for IEEE 802.11a WLAN Standard with on-chip power inductors”,” in 2006 IEEE IMS, June 2006.
[33] A. Afsahi, A. Behzad, V. Magoon, and L. Larson, “Fully integrated dual-band power amplifiers with on-chip baluns in 65 nm CMOS for an 802.11n MIMO WLAN SoC,” in IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Dig., 2009, pp. 365–368.
[34] B. François and P. Reynaert , “ A Fully Integrated Transformer-Coupled Power Detector With 5 GHz RF PA for WLAN 802.11ac in 40 nm CMOS ,” in 2015 IEEE JSSC ,May 2015.
[35] K.-C. Lin, H.-K. Chiou, C.-L. Ko, H.-H. Tsai and Y.-Z. Juang, “A 28 dBm pout 5-GHz CMOS power amplifier using integrated passive device power combining transformer ,” in 2013 IEEE APMC ,Nov. 2013
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/59690-
dc.description.abstract在無線通訊系統中,微波訊號在空氣傳送時,因受雜訊干擾與傳遞時訊號漸漸變弱影響,常致使接收機收到訊號失真而解碼錯誤,因此若能加強傳送訊號使其具有較好的訊號與雜訊能量比,則能增加解碼正確的機率,故在通訊系統中發射機的功率放大器如何具有更大的輸出功率便是重要的課題。除了高功率輸出之外,更要求高效率的操作。由於功率放大器在發射器中消耗了主要部分的能量,因此將效率最佳化是另一個重要的關鍵。
在本論文中,實現了兩種電路,分別為利用變壓器功率合成技術的高輸出功率功率放大器,以及使用自動調整偏壓架構的主動整合式天線電路。前者是利用金氧半場效電晶體製程實現,所設計的頻率為5.2-5.7 GHz頻段;後者為金氧半場效電晶體及整合被動元件製程實現,所設計的頻率為24 GHz頻段。
在本論文第二章中,設計並改良一個在K頻段的主動整合式天線電路,包含了使用了自動調整偏壓架構的功率放大器,及一偶極天線。此主動整合式電路天線利用0.18-μm互補式金氧半導體來製作功率放大器,以及使用整合式被動元件製程來製作天線。此電路改良自陳瑩嘉電路,將輸入巴倫器替換成傳統變壓器實現的巴倫器,並引入蔡作敏教授近場量測系統進行量測。
在本論文第三章中,討論如何使得功率合成器的損耗降到最低,在實現高功率功率放大器時,使其達到高輸出飽和合功率為主要討論重點。在本論文中,說明為何選定變壓器作為功率合成器,並利用等效模型模擬綜合比較串聯和並聯變壓器功率合成,來選定選用何種。在探討變壓器各項參數對功率合成效率的影響,使其效率達到最高。最後,藉由電磁模擬軟體來實際實現變壓功率合成器,並取得變壓器各項實際參數,代入上述驗證,去除不合理的模擬設定,使得變壓器功率合成效率最佳化。
zh_TW
dc.description.abstractIn wireless communication system, when the microwave signal transmits in the air, the receiver could encounter the signal distortion which causes the decoding error due to the noise interference. Therefore, if we can strengthen the transmitting signal and make better signal-to-noise ratio (SNR) of the signal, we can improve the probability of correct decoding for the reason that how to make the power amplifier deliver more output power in wireless transmitter. Besides the high output power, the demand for high efficiency of the power amplifier in wireless communication system has increased because power amplifier consumes the most dc power in the transmitter. Therefore, the optimization of the efficiency becomes a key issue. Several new structures of power amplifier are proposed recently in order to achieve good linearity and efficiency.
In this thesis, two circuits are designed and implemented, which are respectively an active antenna integrated with adaptive-bias power amplifier and a high Psat power amplifier with transformer power combining. The former is implemented on 0.18-μm CMOS and IPD technology operated at 24 GHz while the latter is realized by 0.18-μm CMOS technology operated at 5.2-5.7 GHz.
In Chapter 2, a K-band active antenna integrated with CMOS adaptive-bias PA is proposed to improve the efficiency of the PA. This circuit includes a CMOS adaptive-bias PA and a dipole antenna; the power amplifier is realized by 0.18-µm CMOS technology and the antenna is implemented on IPD technology. The circuit design is extended version of [1]. The traditional transformer balun is selected as input bulun. And on-wafer near-field antenna measurement system using probe station is applied to the measurement of the radiation pattern of antenna under test.
In Chapter 3, a high Psat power amplifier with transformer power combining is designed, and how to make the lower loss of power combiner to achieve high Psat is our focus of discussion. In this thesis, we would discuss why we select transformer as our power combiner and the analysis of how the parameters affect the characteristic of the transformer to optimize the efficiency of the transformer. In the measurement, we set up the measurement as cool as possible because the performance of the circuit will be worse as the temperature increases. And we implement the second version of layout for more heat dissipation to make better power performance.
en
dc.description.provenanceMade available in DSpace on 2021-06-16T09:33:22Z (GMT). No. of bitstreams: 1
ntu-106-R03942092-1.pdf: 3977601 bytes, checksum: 9380c3cc925f4a7c5c0563599f15bfd5 (MD5)
Previous issue date: 2017
en
dc.description.tableofcontents口試委員會審定書 #
誌謝 i
中文摘要 ii
ABSTRACT iii
CONTENTS v
LIST OF FIGURES viii
LIST OF TABLES xv
Chapter 1 Introduction 1
1.1 Background and Motivation 1
1.2 Contribution 1
1.3 Thesis Organization 2
Chapter 2 Design of a K-band Active Antenna Integrated with Power amplifier 3
2.1 Introduction 3
2.1.1 Motivation 3
2.1.2 Objective 4
2.2 Design and Implementation of Adaptive-bias PA and Antenna 5
2.2.1 Design Flow 5
2.2.2 Power Stage Design 7
2.2.3 Adaptive-bias Circuit for Power Stage 8
2.2.4 Design of Antenna 10
2.2.5 Power Budget Calculation 13
2.2.6 Input Balun Design 14
2.2.7 Complete Differential PA 24
2.3 Simulation Results 26
2.3.1 Small Signal Simulation 26
2.3.2 Large Signal Simulation 28
2.3.3 Stability Analysis 28
2.3.4 Antenna Simulation 31
2.4 Measurement Results 34
2.4.1 S-parameters 36
2.4.2 Radiation Pattern 37
2.4.3 Power performance 43
2.5 Discussion and Debug 48
2.6 Summary 55
Chapter 3 Design of CMOS Power Amplifier with Transformer Power Combining for WLAN System Applications 57
3.1 Introduction 57
3.1.1 Motivation 57
3.1.2 Objective 57
3.2 Previous Published literatures 58
3.2.1 Wilkinson power combiner or quadrature coupler 58
3.2.2 Direct Combining 59
3.2.3 Transformer Power Combining 59
3.3 Design and Implement of PA unit and Power Combining Transformer 61
3.3.1 Design Flow 61
3.3.2 Power Stage Design 63
3.3.3 Power Combining Transformer for Power Stage 69
3.3.4 Power Budget Calculation 83
3.3.5 Complete Power Amplifier 84
3.4 Simulation Results 86
3.4.1 Small Signal Simulation 86
3.4.2 Large Signal Simulation 87
3.4.3 Stability Analysis 89
3.5 Measurement Results 91
3.5.1 Small Signal measurement 99
3.5.2 Large Signal Measurement 101
3.6 Debug and Discussion 103
3.7 Summary 110
Chapter 4 Conclusion 112
REFERENCE 113
dc.language.isoen
dc.subject近場量測zh_TW
dc.subject高功率功率放大器zh_TW
dc.subject變壓器功率合成zh_TW
dc.subjectIEEE 802.11azh_TW
dc.subjectWLANzh_TW
dc.subject自動調整偏壓架構zh_TW
dc.subject主動整合式天線電路zh_TW
dc.subject高功率功率放大器zh_TW
dc.subject變壓器功率合成zh_TW
dc.subjectIEEE 802.11azh_TW
dc.subjectWLANzh_TW
dc.subject自動調整偏壓架構zh_TW
dc.subject主動整合式天線電路zh_TW
dc.subject近場量測zh_TW
dc.subjectactive integrated antennaen
dc.subjectWLANen
dc.subjectadaptive-bias techniqueen
dc.subjectnear-field measurementen
dc.subjecthigh Psat power amplifieren
dc.subjecthigh Psat power amplifieren
dc.subjecttransformer power combiningen
dc.subjectIEEE 802.11aen
dc.subjectWLANen
dc.subjectadaptive-bias techniqueen
dc.subjectactive integrated antennaen
dc.subjectnear-field measurementen
dc.subjecttransformer power combiningen
dc.subjectIEEE 802.11aen
dc.title應用於WLAN之變壓器功率合成技術功率放大器研製及K頻段主動天線整合功率放大器研究zh_TW
dc.titleResearch on CMOS Power Amplifier with Transformer Power Combining for WLAN System Applications and K-band Active Antenna Power Amplifier Using CMOS and IPD Processen
dc.typeThesis
dc.date.schoolyear105-1
dc.description.degree碩士
dc.contributor.oralexamcommittee馬自莊,高?堯,蔡政翰
dc.subject.keyword高功率功率放大器,變壓器功率合成,IEEE 802.11a,WLAN,自動調整偏壓架構,主動整合式天線電路,近場量測,zh_TW
dc.subject.keywordhigh Psat power amplifier,transformer power combining,IEEE 802.11a,WLAN,adaptive-bias technique,active integrated antenna,near-field measurement,en
dc.relation.page117
dc.identifier.doi10.6342/NTU201700593
dc.rights.note有償授權
dc.date.accepted2017-02-14
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電信工程學研究所zh_TW
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