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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳文中 | |
| dc.contributor.author | Tsung-Ju Wu | en |
| dc.contributor.author | 吳宗儒 | zh_TW |
| dc.date.accessioned | 2021-06-16T08:40:00Z | - |
| dc.date.available | 2016-11-05 | |
| dc.date.copyright | 2013-11-05 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-09-25 | |
| dc.identifier.citation | [1] Y. He, S. Gong, R. Hattori, and J. Kanicki, 'High performance organic polymer light-emitting heterostructure devices,' Applied Physics Letters, vol. 74, pp. 2265-2267, 1999.
[2] A. Dodabalapur, 'Organic and polymer transistors for electronics,' Materials Today, vol. 9, pp. 24-30, 2006. [3] Y.-J. Cheng, S.-H. Yang, and C.-S. Hsu, 'Synthesis of conjugated polymers for organic solar cell applications,' Chemical Reviews, vol. 109, pp. 5868-5923, 2009. [4] S. J. Toal, and W. C. Trogler, 'Polymer sensors for nitroaromatic explosives detection,' Journal of Materials Chemistry, vol. 16, pp. 2871-2883, 2006. [5] H. E. Katz, 'Recent advances in semiconductor performance and printing processes for organic transistor-based electronics,' Chemistry of Materials, vol. 16, pp. 4748-4756, 2004. [6] L.-L. Chua, J. Zaumseil, J.-F. Chang, E. C.-W. Ou, P. K.-H. Ho, H. Sirringhaus, et al., 'General observation of n-type field-effect behaviour in organic semiconductors,' Nature, vol. 434, pp. 194-199, 2005. [7] A. Salleo, M. Chabinyc, M. Yang, and R. Street, 'Polymer thin-film transistors with chemically modified dielectric interfaces,' Applied Physics Letters, vol. 81, pp. 4383-4385, 2002. [8] K. J. Baeg, M. Caironi, and Y. Y. Noh, 'Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors,' Advanced Materials, 2013. [9] A. Brown, D. De Leeuw, E. Lous, and E. Havinga, 'Organic n-type field-effect transistor,' Synthetic metals, vol. 66, pp. 257-261, 1994. [10] J. G. Laquindanum, H. E. Katz, A. Dodabalapur, and A. J. Lovinger, 'n-Channel organic transistor materials based on naphthalene frameworks,' Journal of the American Chemical Society, vol. 118, pp. 11331-11332, 1996. [11] P. R. Malenfant, C. D. Dimitrakopoulos, J. D. Gelorme, L. L. Kosbar, T. O. Graham, A. Curioni, et al., 'N-type organic thin-film transistor with high field-effect mobility based on a N, N′-dialkyl-3, 4, 9, 10-perylene tetracarboxylic diimide derivative,' Applied Physics Letters, vol. 80, pp. 2517-2519, 2002. [12] S. Ando, J.-i. Nishida, H. Tada, Y. Inoue, S. Tokito, and Y. Yamashita, 'High performance n-type organic field-effect transistors based on π-electronic systems with trifluoromethylphenyl groups,' Journal of the American Chemical Society, vol. 127, pp. 5336-5337, 2005. [13] H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dötz, et al., 'A high-mobility electron-transporting polymer for printed transistors,' Nature, vol. 457, pp. 679-686, 2009. [14] 劉淑白, '全噴墨有機半導體摻雜石墨烯之薄膜電晶體效能提升研究,' 工程科學及海洋工程研究所, 國立台灣大學, 2011. [15] D. Gamota, Printed Organic and Molecular Electronics: Springer, 2004. [16] Y. Wu, Y. Li, B. S. Ong, P. Liu, S. Gardner, and B. Chiang, 'High‐Performance Organic Thin‐Film Transistors with Solution‐Printed Gold Contacts,' Advanced Materials, vol. 17, pp. 184-187, 2005. [17] 蘇明德, '能導電的高分子,' 科學發展, vol. 452, 2010. [18] 江文彥, '導電性高分子的出現與科學上的偶然,' 科學發展, vol. 359, 2002. [19] L. Li, L. Jiang, W. Wang, C. Du, H. Fuchs, W. Hu, et al., 'High‐Performance and Stable Organic Transistors and Circuits with Patterned Polypyrrole Electrodes,' Advanced Materials, vol. 24, pp. 2159-2164, 2012. [20] S. Jussila, M. Puustinen, T. Hassinen, J. Olkkonen, H. G. Sandberg, and K. Solehmainen, 'Self-aligned patterning method of poly (aniline) for organic field-effect transistor gate electrode,' Organic Electronics, vol. 13, pp. 1308-1314, 2012. [21] L. Groenendaal, F. Jonas, D. Freitag, H. Pielartzik, and J. R. Reynolds, 'Poly (3, 4‐ethylenedioxythiophene) and its derivatives: past, present, and future,' Advanced Materials, vol. 12, pp. 481-494, 2000. [22] J. Ouyang, Q. Xu, C.-W. Chu, Y. Yang, G. Li, and J. Shinar, 'On the mechanism of conductivity enhancement in poly (3, 4-ethylenedioxythiophene): poly (styrene sulfonate) film through solvent treatment,' Polymer, vol. 45, pp. 8443-8450, 2004. [23] H. Sirringhaus, T. Kawase, R. Friend, T. Shimoda, M. Inbasekaran, W. Wu, et al., 'High-resolution inkjet printing of all-polymer transistor circuits,' Science, vol. 290, pp. 2123-2126, 2000. [24] W. L. Kalb, T. Mathis, S. Haas, A. F. Stassen, and B. Batlogg, 'Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects,' Applied Physics Letters, vol. 90, pp. 092104-092104-3, 2007. [25] Y. H. Noh, S. Young Park, S.-M. Seo, and H. H. Lee, 'Root cause of hysteresis in organic thin film transistor with polymer dielectric,' Organic electronics, vol. 7, pp. 271-275, 2006. [26] R. o. P. Ortiz, A. Facchetti, and T. J. Marks, 'High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors,' Chemical Reviews, vol. 110, pp. 205-239, 2009. [27] Y.-Y. Lin, D. Gundlach, S. Nelson, and T. Jackson, 'Stacked pentacene layer organic thin-film transistors with improved characteristics,' Electron Device Letters, IEEE, vol. 18, pp. 606-608, 1997. [28] B. S. Ong, Y. Wu, Y. Li, P. Liu, and H. Pan, 'Thiophene Polymer Semiconductors for Organic Thin‐Film Transistors,' Chemistry-A European Journal, vol. 14, pp. 4766-4778, 2008. [29] Z. Bao, A. J. Lovinger, and A. Dodabalapur, 'Organic field‐effect transistors with high mobility based on copper phthalocyanine,' Applied Physics Letters, vol. 69, pp. 3066-3068, 1996. [30] Z. Chen, Y. Zheng, H. Yan, and A. Facchetti, 'Naphthalenedicarboximide-vs perylenedicarboximide-based copolymers. Synthesis and semiconducting properties in bottom-gate n-channel organic transistors,' Journal of the American Chemical Society, vol. 131, pp. 8-9, 2008. [31] A. Babel, and S. A. Jenekhe, 'High electron mobility in ladder polymer field-effect transistors,' Journal of the American Chemical Society, vol. 125, pp. 13656-13657, 2003. [32] A. Salleo, 'Charge transport in polymeric transistors,' Materials today, vol. 10, pp. 38-45, 2007. [33] T. Richards, and H. Sirringhaus, 'Bias-stress induced contact and channel degradation in staggered and coplanar organic field-effect transistors,' Applied Physics Letters, vol. 92, pp. 023512-023512-3, 2008. [34] K. J. Baeg, D. Khim, D. Y. Kim, S. W. Jung, J. B. Koo, I. K. You, et al., 'High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors,' Journal of Polymer Science Part B: Polymer Physics, vol. 49, pp. 62-67, 2011. [35] K.-J. Baeg, D. Khim, J. Kim, H. Han, S.-W. Jung, T.-W. Kim, et al., 'Controlled charge transport by polymer blend dielectrics in top-gate organic field-effect transistors for low-voltage-operating complementary circuits,' ACS applied materials & interfaces, vol. 4, pp. 6176-6184, 2012. [36] D. A. Rider, B. J. Worfolk, K. D. Harris, A. Lalany, K. Shahbazi, M. D. Fleischauer, et al., 'Stable inverted polymer/fullerene solar cells using a cationic polythiophene modified PEDOT: PSS cathodic interface,' Advanced Functional Materials, vol. 20, pp. 2404-2415, 2010. [37] F. Xue, Y. Su, and K. Varahramyan, 'Modified PEDOT-PSS conducting polymer as S/D electrodes for device performance enhancement of P3HT TFTs,' Electron Devices, IEEE Transactions on, vol. 52, pp. 1982-1987, 2005. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58940 | - |
| dc.description.abstract | 由於科技的發展,軟性電子逐漸在市場中嶄露頭角,其可撓的特性賦與電子 產品新的價值,如可彎曲式顯示器、電子紙、有機太陽能電池以及 RFID 標籤,而 最受到市場的矚目還是以顯示器為主,其中有機薄膜電晶體更是被廣泛的應用。
過去十年來,p-type 有機半導體的研究已經逐漸成熟,如能夠發展出 n-type 有機薄膜電晶體與 p-type 半導體匹配成互補電路,將能使有機薄膜電晶體的應用 更進一步,朝著有機積體電路設計邁進。 本論文使用團隊自製的噴墨系統,利用噴墨製程搭配有機材料,使用穩定度 高的 n-type 有機半導體材料 P(NDI2OD-T2),噴印於金電極之源汲極上,其載子飄 移率可達 0.3 cm2V-1s-1,電流開關比為 3.4 x 103;而為了全有機薄膜電晶體的開發, 我們利用高分子導電聚合物 PEDOT:PSS 材料,使用噴印製程製作源汲極,其製 作電晶體載子飄移率為 0.022 cm2V-1s-1,電流開關比為 6.8 x 102,成功的製作出 n 型有機薄膜電晶體。 未來,將嘗試利用噴墨製程發展全有機噴墨電路,結合本團隊發展成熟之 p-type 電晶體與 n-type 電晶體製作互補電路,並提升其電子元件的電性表現。 | zh_TW |
| dc.description.abstract | With the development of electrical technology, flexible electronics attracts attention in marketplace. Their flexible capability promotes different applications to electrical products, such as flexible displays, electronic papers, organic solar cells and RFID tags. In all these applications, organic thin film transistors (OTFT) are one of the most important elements.
In last ten years, researches on p-type organic semiconductor have been extensively developed. On the other hand, the development of n-type organic semiconductor is still limited. Therefore, it is important to fabricate the n-type organic semiconductor for the complementary circuit technology. In this work, we used an inkjet printing fabrication system which was made by our research team to develop n-type OTFT, The n-type organic semiconductor P (NDI2OD-T2) was used as the channel material in our devices. Based on these technologies and materials, we successfully fabricated n-type OTFT devices. The device with Au contacts and polymer dielectric, achieved the mobility up to 0.3 cm2V-1s-1 and on/off current ratio of 3.4 x 103. Besides, the device with printed PEDOT: PSS electrode achieved the mobility up to 0.022 cm2V-1s-1 and on/off current ratio of 6.8 x 102. Based on this development, we will be able to fabricate all-inkjet-printed complementary organic circuits for future applications. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T08:40:00Z (GMT). No. of bitstreams: 1 ntu-102-R00525027-1.pdf: 5561693 bytes, checksum: 0512964009924700d6af91c2ab5121df (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii Abstract iii 目錄 iv 圖目錄 vii 表目錄 xii Chapter 1 緒論 1 1.1 前言 1 1.2 研究背景 3 1.3 研究動機 7 1.4 論文架構 8 Chapter 2 元件原理與材料介紹 9 2.1 有機薄膜電晶體原理 9 2.2 導線材料 14 2.3 絕緣層材料 19 2.4 半導體材料 20 Chapter 3 噴墨製程系統與製程設備儀器 25 3.1 噴墨原理與系統簡介 25 3.2 氣壓控制系統 27 3.3 墨滴觀測系統 29 3.4 位移平台裝置 30 3.5 程式控制系統 32 3.6 製程設備與量測儀器 36 Chapter 4 Bottom Gate Bottom Contact有機薄膜電晶體製程與結果探討 42 4.1 BGBC 有機薄膜電晶體製程簡介 42 4.2 BGBC 有機薄膜電晶體試片製作與噴印半導體製程 43 4.3 BGBC 有機薄膜電晶體初步成果探討 46 4.3.1 噴印半導體層數與電晶體特性影響 48 4.3.2 半導體層烘烤溫度與電晶體特性影響 51 4.3.3 半導體層烘烤時間與電晶體特性影響 55 4.4 BGBC 有機薄膜電晶體總結 60 Chapter 5 Top Gate Bottom Contact 有機薄膜電晶體製程與結果探討 61 5.1 TGBC 有機薄膜電晶體製程簡介 61 5.1.1 噴印電極 63 5.1.2 半導體層 64 5.1.3 絕緣層 65 5.2 TGBC 有機薄膜電晶體實驗結果 66 5.2.1 以金電極為源汲極之TGBC有機薄膜電晶體實驗結果 67 5.2.2 以PEDOT:PSS電極為源汲極之TGBC有機薄膜電晶體實驗結果 70 5.3 TGBC 有機薄膜電晶體總結 73 Chapter 6 結論與未來展望 74 6.1 結論 74 6.2 未來展望 74 Reference 76 | |
| dc.language.iso | zh-TW | |
| dc.subject | P(NDI2OD-T2) | zh_TW |
| dc.subject | 軟性電子 | zh_TW |
| dc.subject | 噴墨技術 | zh_TW |
| dc.subject | 有機薄膜電晶體 | zh_TW |
| dc.subject | organic thin film transistor | en |
| dc.subject | flexible electronics | en |
| dc.subject | ink-jet printing technology | en |
| dc.subject | P(NDI2OD-T2) | en |
| dc.title | 噴墨式N型有機薄膜電晶體元件之開發 | zh_TW |
| dc.title | The Development of Inkjet-Printing N-type Organic Thin Film
Transistor Device | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 林致廷 | |
| dc.contributor.oralexamcommittee | 李世光,吳忠緻 | |
| dc.subject.keyword | 軟性電子,噴墨技術,有機薄膜電晶體,P(NDI2OD-T2), | zh_TW |
| dc.subject.keyword | flexible electronics,ink-jet printing technology,organic thin film transistor,P(NDI2OD-T2), | en |
| dc.relation.page | 78 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2013-09-26 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
| 顯示於系所單位： | 工程科學及海洋工程學系 | |
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