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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電子工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58887
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DC 欄位值語言
dc.contributor.advisor李泰成
dc.contributor.authorChia-Hao Hsuen
dc.contributor.author許家豪zh_TW
dc.date.accessioned2021-06-16T08:36:50Z-
dc.date.available2018-11-05
dc.date.copyright2013-11-05
dc.date.issued2013
dc.date.submitted2013-10-29
dc.identifier.citation[1] J. Sauerbrey, D. Schmitt-Landsiedel, and R. Thewes, “A 0.5-V 1μW Successive Approximation ADC,” IEEE J. Solid-State Circuits, vol. 38, no. 7, pp. 1261-1265, July 2003.
[2] A. N. Karanicolas, H. S. Lee, and K. L. Bacrania, “A 15-b 1-Msample/s Digitally Self-Calibrated Pipeline ADC,” IEEE J. Solid-State Circuits, vol. 28, no. 12, pp. 1207-1215, Dec. 1993.
[3] B. Murmann and B. E. Boser, “A 12-bit 75-MS/s pipelined ADC using open-loop residue amplification,“ IEEE J. Solid-State Circuits, vol. 38, no. 12, pp. 2040-2050, Dec. 2003.
[4] J. K. Fiorenza, T. Sepke, P. Holloway, C. G. Sodini, and H. S. Lee, “Comparator-based switched-capacitor circuits for scaled CMOS technologies,” IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2658-2668, Dec. 2006.
[5] L. Brooks and H. S. Lee, “A zero-crossing-based 8-bit 200 MS/s pipelined ADC,” IEEE J. Solid-State Circuits, vol. 42, no.12, pp. 2677-2687, Dec. 2007.
[6] N. Verma and A. P. Chandrakasan, “An Ultra Low Energy 12-bit Rate-Resolution Scalable SAR ADC for Wireless Sensor Nodes,” IEEE J. Solid-State Circuits, vol. 42, no. 6, pp. 1196-1205, June 2007.
[7] Y. K. Chang, C. S. Wang, and C. K. Wang, “A 8-bit 500 KS/s Low Power SAR ADC for Bio-Medical Applications,” in Proc. IEEE Asian Solid-State Circuits Conf., Nov. 2007, pp. 228-231.
[8] H. K. Hong, H. W. Kang, B. Sung, C. H. Lee, M. Choi, H. J. Park, and S. T. Ryu, “An 8.6 ENOB 900MS/s Time-interleaved 2b/cycle SAR ADC with a 1b/cycle Reconfiguration for Resolution Enhancement,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2013, pp. 470-471.
[9] H. K. Hong, W. Kim, S. J. Park, M. Choi, H. J. Park, and S.T. Ryu, “A 7b 1GS/s 7.2mW Nonbinary 2b/cycle SAR ADC with Register-to-DAC Direct Control,” IEEE CICC, Sep. 2012.
[10] S. S. Wong, U-F. Chio, Y. Zhu, S. W. Sin, S. P. U, and R. P. Martins, “A 2.3mW 10-bit 170 MS/s Two-step Binary-Search Assisted Time-Interleaved SAR ADC,” IEEE J. Solid-State Circuits, vol. 48, no. 8, pp. 1-12, Aug. 2013.
[11] W. Liu, P. Huang, and Y. Chiu, “A 12-bit 50MS/s 3.3-mW SAR ADC with Background Digital Calibration,” IEEE CICC, Sep. 2012.
[12] B. Razavi, Principles of Data Conversion System Design, Wiley-IEEE Press, New York, 1995.
[13] D. Johns and K. Martin, Analog Integrated Circuit Design, John Wiley & Sons, New York, 1997.
[14] F. Maloberti, Data Converters, Springer, Dordrecht, 2007.
[15] W. Kester, The Data Converter Handbook, Analog Device, Mar. 2004.[Online] Available:www.analog.com/library/analogDialogue/archives/39-06/data_conversion_handbook.html
[16] F. Goodenough, 'Analog technology of all varieties dominate ISSCC,' Electronic Design, pp. 96, Feb. 1996.
[17] J. Yang, T. L. Naing, and R. W. Brodersen, “A 1 GS/s 6 Bit 6.7 mW Successive Approximation ADC Using Asynchronous Processing,” IEEE J. Solid-State Circuits, vol. 45, no. 8, pp. 1469-1478, Aug. 2010.
[18] T. Jiang, W. Liu, F. Y. Zhong, C. Zhong, and P. Y. Chiang, “Single-Channel, 1.25-GS/s, 6-bit, Loop-Unrolled Asynchronous SAR-ADC in 40nm-CMOS,” IEEE CICC, Sep. 2010.
[19] B. Wicht, T. Nirschl, and D. Schmitt-Landsiedel, “Yield and Speed Optimization of a Latch-Type Voltage Sense Amplifier,” IEEE J. Solid-State Circuits, vol. 39, no. 7, pp. 1148-1158, July. 2004.
[20] J. Kim, B. S. Leibowitz, J. Ren, and C. J. Madden, “Simulation and Analysis of Random Decision Errors in Clocked Comparators,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 56, no. 8, pp. 1844-1857, Aug. 2009.
[21] J. Kim, B. S. Leibowitz, and M. Jeeradit, “Impulse sensitivity function analysis of periodic circuits,” in Proc. ACM/IEEE Int. Conf. Comput.- Aided Des., Nov. 2008, pp. 386-391.
[22] C. C. Liu, S. J. Chang, G. Y. Huang, and Y. Z. Lin, “A 10-bit 50-MS/s SAR ADC with a monotonic capacitor switching procedure,” IEEE J. Solid-State Circuits, vol. 34, no. 5, pp. 731-740, Apr. 2010.
[23] Y. Z. Lin, C. C. Liu, G. Y. Huang, Y. T. Shyu, and S. J. Chang, “A 9-bit 150-MS/s 1.53-mW subranged SAR ADC in 90-nm CMOS,” in Symp. VLSI Circuits Dig. Tech. Papers, Jun. 2010, pp. 243-244.
[24] S. H. Lewis, H. S. Fetterman, G. F. Gross, Jr. R. Ramachandran, and T. R. Viswanathan, “A 10-b 20-Msample/s Analog-to-Digital Converter,” IEEE J. Solid-State Circuits, vol. 27, no. 3, pp. 351-358, March 1992.
[25] P. M. Figueiredo, “Comparator Metastability in the Presense of Noise,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 60, no. 5, pp. 1286-1299, May 2013.
[26] M. J. M. Pelgrom, A. C. J. Duinmaijer, and A. P. G. Welbers, “Matching properties of MOS transistors,” IEEE J. Solid-State Circuits, vol. 24, no. 5, pp. 1433-1440, Oct. 1989.
[27] J. H. Tsai, Y. J. Chen, M. H. Shen, and P. C. Huang, “A 1-V, 8b, 40MS/s, 113μW Charge-Recycling SAR ADC with a 14μW Asynchronous Controller,” in Symp. VLSI Circuits Dig. Tech. Papers, Jun. 2011, pp. 264-265.
[28] V. Hariprasath, J. Guerber, S. Lee, and U. Moon, “Merged capacitor switching based SAR ADC with highest switching energy-efficiency,” Electron. Lett., vol. 46, pp. 620-621, Apr. 2010.
[29] Y. Z. Lin, C. C. Liu, G. Y. Huang, Y. T. Shyu, Y. T. Liu, and S. J. Chang, “A 9-bit 150-MS/s Subrange ADC Based on SAR Architecture in 90-nm CMOS,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 60, no. 3, pp. 570-581, March 2013.
[30] Y. Zhu, C. H. Chan, U-F. Chio, S. W. Sin, S. P. U, R. P. Martins, and F. Maloberti, “A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS,” IEEE J. Solid-State Circuits, vol. 45, no. 6, pp. 1111-1121, June 2010.
[31] Y. Zhu, C. H. Chan, S. W. Sin, S. P. U, R. P. Martins, and F. Maloberti, “A 50-fJ 10-b 160-MS/s Pipelined-SAR ADC Decoupled Flip-Around MDAC and Self-Embedded Offset Cancellation,” IEEE J. Solid-State Circuits, vol. 47, no. 11, pp. 2614-2626, Nov. 2012.
[32] C. C. Liu, S. J. Chang, G. Y. Huang, and Y. Z. Liu, “A 0.92mW 10-bit 50-MS/s SAR ADC in 0.13μm CMOS process,” in Symp. VLSI Circuits Dig. Tech. Papers, Jun. 2009, pp. 236-237.
[33] M. Furuta, M. Nozawa, and T. Itakura, “A 0.06mm2 8.9b ENOB 40MS/s Pipelined SAR ADC in 65nm CMOS,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2010, pp. 382-383.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58887-
dc.description.abstract本論文提出一個基於相位偵測的低雜訊比較器使用在子範圍類比數位轉換器。可以減低熱雜訊並且有較低機率發生亞穩態的特性。一個十位元的子範圍類比數位轉換器由3.9位元的快閃類比數位轉換器和7位元的循序漸近式類比數位轉換器組成。本論文提出的類比數位轉換器使用台積電的40奈米低功耗製程製做完成。此類比數位轉換器達到54.41dB訊號雜訊失真比,操作在160MHz的取樣頻率。在1.1V的電源供應下消耗2.7mW。品值因素達到39.4fJ/convertion-step。核心電路面積佔據0.0475平方毫米。zh_TW
dc.description.abstractA low-noise phase-detector-based (PD-based) comparator is proposed for subrange analog-to-digital converters (ADCs) in this thesis. It can reduce the thermal-induced noise as well as the probability of the metastability. The 10-bit subrange ADC is composed of a 3.9-bit flash ADC and a 7-bit SAR ADC. The proposed ADC was fabricated in a 40-nm LP CMOS technology. The ADC achieves 54.41-dB SNDR at 160MS/s under a 1.1V supply voltage and consumes 2.7mW. The figure-of-merit (FOM) is 39.4 fJ/conversion-step. The active area is 0.0475 mm2.en
dc.description.provenanceMade available in DSpace on 2021-06-16T08:36:50Z (GMT). No. of bitstreams: 1
ntu-102-R99943127-1.pdf: 8762039 bytes, checksum: fccd0dca5d10bf422efedf88713546b6 (MD5)
Previous issue date: 2013
en
dc.description.tableofcontents摘要 i
Abstract ii
Contents iii
List of Figures vii
List of Tables xi
Chapter 1 Introduction 1
1.1 Motivation 1
1.2 Thesis Organization 1
Chapter 2 Fundamentals of ADCs 3
2.1 Introduction 3
2.2 ADC Performance Metrics 3
2.2.1 Differential and Integral Nonlinearity (DNL, INL) 3
2.2.2 Signal-to-Noise Ratio (SNR) 6
2.2.3 Signal-to-Noise-and-Distortion Ratio (SNDR) 8
2.2.4 Effective Number-of-Bits (ENOB) 8
2.2.5 Spurious-Free Dynamic Range (SFDR) 8
2.2.6 Figure of Merit (FoM) 9
2.3 Architectures of Analog-to-Digital Converters 10
2.3.1 Flash ADC 10
2.3.2 Subrange ADC 11
2.3.3 Successive Approximation ADC 12
Chapter 3 Subrange ADC with PD-based comparator 15
3.1 Introduction 15
3.2 Asynchronous SAR ADC 15
3.3 Metastability of asynchronous SAR ADC 16
3.4 Proposed phase-detector-based comparator. 19
3.4.1 Principle 19
3.4.2 Circuit description 22
3.4.3 Noise analysis 28
3.5 Subrange ADC with PD-based comparator 33
3.6 Summary 40
Chapter 4 Circuit Implementation 41
4.1 Introduction 41
4.2 Bootstrapped switch 41
4.3 Flash comparator 42
4.4 Data register 44
4.5 Capacitive DAC 46
4.6 Clock Generator 49
4.7 Post-Layout Simulation 50
4.8 Summary 51
Chapter 5 Experimental Results 53
5.1 Introduction 53
5.2 Print Circuit Board Design 53
5.3 Measurement Setup 54
5.4 Measurement Results 55
5.4.1 10-bit subrange ADC 55
5.4.2 PD-based comparator 64
5.5 Summary 67
5.6 Conclusions 68
5.7 Future Works 69
Bibliography 71
dc.language.isoen
dc.subject亞穩態zh_TW
dc.subject基於相位偵測的低雜訊比較器zh_TW
dc.subject子範圍類比數位轉換器zh_TW
dc.subjectMetastabilityen
dc.subjectPhase-detector -based comparatoren
dc.subjectSubrange ADCen
dc.title一個十位元高速的子範圍類比數位轉換器zh_TW
dc.titleA 10-bit High-Speed Subrange ADCen
dc.typeThesis
dc.date.schoolyear102-1
dc.description.degree碩士
dc.contributor.oralexamcommittee洪浩喬,陳信樹
dc.subject.keyword亞穩態,基於相位偵測的低雜訊比較器,子範圍類比數位轉換器,zh_TW
dc.subject.keywordMetastability,Phase-detector -based comparator,Subrange ADC,en
dc.relation.page75
dc.rights.note有償授權
dc.date.accepted2013-10-30
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電子工程學研究所zh_TW
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