請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58626完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林清富(Ching-Fuh Lin) | |
| dc.contributor.author | Pin-Chun Shen | en |
| dc.contributor.author | 沈品均 | zh_TW |
| dc.date.accessioned | 2021-06-16T08:22:48Z | - |
| dc.date.available | 2019-03-18 | |
| dc.date.copyright | 2014-03-18 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-01-24 | |
| dc.identifier.citation | 第一章
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58626 | - |
| dc.description.abstract | 本研究提出具有新的光轉換程序的螢光材料，是利用半導體奈米結構來取代稀土元素d-f電子躍遷的激發與放射機制，此系統可以解決白光LED螢光粉對於稀土元素的依賴，以避免持續的過度開採稀土而對環境造成嚴重的迫害。
本研究內容可以分為三個部分，第一部分為開發一種可以將紫外光轉換成暖色系白光的奈米複合材料，其結構是在ZnS:Mn (ZMS)與ZnO半導體奈米粒子表面聚合上高分子poly(9,9-di-n-hexylfluorenyl-2,7-diyl) (PF)，形成類似核-殼(core-shell)的奈米結構。此奈米結構中設計有三種不同的電子電洞複合機制，因此可釋放三種不同能量之光子，在紫外光的激發下，經由電子躍遷而產生藍光、綠光與橘紅光，進而合成白光。此藍光、綠光與橘紅光的相對強度具有調變性，因此白光可以涵蓋色溫2100K左右的燭光以及色溫6000K以上的冷白光。 第二部分則針對上述的半導體奈米複合材料進行量子效率的最佳化，分別從材料反應濃度、材料厚度、奈米材料的尺寸與激發波長來探討其對量子效率的影響。在參數最佳化之後，暖白光與冷白光材料系統之量子效率皆可以到達到80 %以上。 在本研究的第三部分為擴展本材料架構之應用性，利用半導體奈米材料設計可利用藍光進行光致發光的系統，我們提出了兩種不同的材料結構，分別為(i) ZnS:Mn/ZnO/PF三層結構之粒子 (ii)參雜錳之硒化鋅奈米粒子(ZnSe:Mn)。其中在(i)系統中，利用ZnO與ZnS:Mn接面間的電子轉移(interfacial transition)，可將ZnS:Mn價帶的電子以藍光激發到ZnO的傳導帶，這些激發電子可經由介面能態與電洞複合而達成光轉換的程序，此系統可以在400 nm ~ 430 nm的藍光激發下產生黃綠光。而在(ii)系統，我們合成能隙位於藍光波段的直接能隙半導體材料ZnSe:Mn，利用Mn離子之最外層d軌域受到ZnSe晶格場的量子微擾效應，分裂為兩個不同能態，利用電子於此能態之躍遷進行藍光轉換為橘光的光物理程序，而將400nm ~ 460 nm的藍光轉換成峰值在580 nm ~ 600 nm的橘光。 本研究所提出的光物理程序，可成功將紫外光或藍光經由半導體奈米結構轉換為較長波長之可見光，此方法不但具有相當高的發光效率且其材料可利用低溫溶液製程合成，更重要的是其發光機制不必再依賴價格昂貴且不環保的稀土元素，本材料具有很大的潛力作為新世代LED固態照明之螢光材料。 | zh_TW |
| dc.description.abstract | Currently available methods for white light emission, either based on rare-earth doped phosphors or cadmium-contained quantum dots, are associated with high environmental cost of rare-earth mining or cadmium pollution. Here we present a cutting-edge nanotechnology based on semiconductor nanostructured composites that give warm-white-light emission and efficient luminescence conversion.
The elaborately designed nanocomposites presented in fisrt part encompass three different electron-hole-recombination mechanisms, which can contribute to photon emissions at blue, green and orange light. Benefiting from the controllable photon-emission mechanisms, wide tunablity of color temperature from near 2100 K to above 6000 K, including both candle light and pure white light, has been attainable, providing a forward-looking property for luminescent materials of solid-state lighting. In second part, we focus on improving the quantum efficiency of the nanocomposites. By optimizing the excitation wavelength, size of nanoparticles, thickness of the nanocomposites, and component ratios, the nanoscale composites composed of wide band gap materials can effectively reduce emission loss caused by scattering and self-absorption, and thus a high quantum efficiency above 80 % can be achieved. In third part, we present two novel luminescenct systems for blue-pumped white-light-emitting-diodes (white-LEDs). These two systems, ZnS:Mn/ZnO/PF multilayer particles and ZnSe:Mn nanoparticles, can achieve wavelength down-conversion from blue light to yellow and orange light, respectively. In this work, the innovative approaches for luminescence conversion can serve as an energy-saving and environmentally benign technology for white-LED lighting applications. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T08:22:48Z (GMT). No. of bitstreams: 1 ntu-103-R00941116-1.pdf: 6590563 bytes, checksum: c18ca2bb072d374ced25629aca36a420 (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 口試委員會審定書…………………………………………………………………II
致謝…………………………………………………………………………………III 摘要…………………………………………………………………………………VI ABSTRACT………………………………………………………………………VIII 目錄…………………………………………………………………………………X 圖目錄……………………………………………………………………………XIII 表目錄……………………………………………………………………………XVI 第一章 緒論…………………………………………………………………………1 1.1 照明光源之發展與其未來趨勢 1 1.2 新世代照明技術:白光LED原理 6 1.2.1 多晶片型(Multi Chip) 6 1.2.2 藍光 LED + 黃光螢光粉 6 1.2.3 藍光 LED + 黃光(或綠色)螢光粉與紅光螢光粉 7 1.2.4 紫外光LED + 藍色、綠色與紅色螢光粉 8 1.3 白光LED螢光粉介紹 9 1.3.1 參雜稀土元素之陶瓷型螢光粉 9 1.3.2 參雜稀土元素之陶瓷型螢光粉其激發與發光原理 11 1.3.3 奈米晶體量子點螢光粉(Nanocrystal Quantum Dots, NQDs) 13 1.3.4 奈米晶體量子點螢光粉發光原理 14 1.4 稀土螢光粉與量子點對於白光LED發展之隱憂 15 1.5 研究動機 18 1.6 參考文獻 18 第二章 實驗原理……………………………………………………………………22 2.1 半導體光電物理 22 2.1.1 半導體之光子吸收與光子放射機制 22 2.1.2 電子躍遷之量子理論 23 2.1.3 半導體奈米材料之量子侷限效應(Quantum Confinement Effect) 26 2.2 導電高分子之光物理程序 29 2.3 量子力學之電場微擾效應: (STARK EFFECT) 33 2.4 參考文獻…………………………………………………………………34 第三章 可利用紫外光激發白光之半導體奈米結構………………………………36 3.1 研究動機 37 3.2 材料特性介紹 37 3.2.1 氧化鋅材料特性 37 3.2.2 Poly(9,9-di-n-hexylfluorenyl-2,7-diyl)材料特性 39 3.2.3 ZnS材料特性 41 3.3 實驗設計:紫外光轉換白光之電子電洞複合機制設計 43 3.4 實驗步驟 44 3.4.1 ZnS:Mn (ZMS) 奈米粒子之合成 44 3.4.2 ZMS(PF)ZnO半導體奈米複合材料之合成 45 3.5 實驗結果與討論 46 3.5.1 ZnS:Mn奈米粒子材料結構與表面形貌 46 3.5.2 Mn2+參雜濃度對ZnS:Mn奈米粒子其光學性質之影響 47 3.5.2 ZnS:Mn濃度對ZMS(PF)ZnO白光特性之影響 52 3.5.3 激發波長對ZMS(PF)ZnO白光特性之影響 63 3.6 結論 66 3.7 參考文獻 67 第四章 提升半導體奈米結構之量子效率…………………………………………69 4.1 研究動機 70 4.2 實驗步驟 71 4.2.1 ZnS:Mn (ZMS) 奈米粒子之合成 71 4.2.2 ZMS(PF)ZnO半導體奈米複合材料之合成 72 4.2.3 PF(ZnO)冷白光材料之合成 73 4.3 實驗結果與討論 74 4.3.1 PF有機材料濃度對發光效率之影響 74 4.3.2 激發波長對材料發光效率之影響 75 4.3.3 ZnO奈米粒子粒徑對發光效率之影響 82 4.3.4 旋塗厚度對發光效率之影響 83 4.4 結論 84 4.5 參考文獻 84 第五章: 藍光激發之半導體螢光材料開發………………………………………85 5.1 研究動機 86 5.2 簡介 86 5.2.1 Type II Heterojunction: ZnS/ZnO Interfacial Transition 86 5.2.2 ZnSe材料介紹 87 5.3 實驗步驟 88 5.3.1 ZnS:Mn/ZnO/PF奈米結構之製作 88 5.3.2 ZnSe:Mn奈米粒子之合成 88 5.4 實驗結果與討論 90 5.4.1 ZnS:Mn/ZnO/PF材料特性分析 90 5.4.2 ZnS:Mn/ZnO/PF之發光特性 93 5.4.3 成長溫度對ZnSe:Mn奈米粒子結晶性與粒徑之影響 95 5.4.4 成長溫度對ZnSe:Mn奈米粒子光學特性之影響 99 5.5 結論 107 5.6 參考文獻 107 第六章: 結論與未來展望…………………………………………………………109 6.1 結論 109 6.2 未來展望 111 | |
| dc.language.iso | zh-TW | |
| dc.subject | 硫化鋅 | zh_TW |
| dc.subject | 硒化鋅 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 光子 | zh_TW |
| dc.subject | 半導體奈米結構 | zh_TW |
| dc.subject | 螢光粉 | zh_TW |
| dc.subject | 白光發光二極體 | zh_TW |
| dc.subject | zinc selenide | en |
| dc.subject | phosphors | en |
| dc.subject | semiconductor nanostructures | en |
| dc.subject | photonics | en |
| dc.subject | zinc oxide | en |
| dc.subject | zinc sulfide | en |
| dc.subject | white-light-emitting diodes | en |
| dc.title | 半導體奈米結構於白光LED高效率螢光材料之應用 | zh_TW |
| dc.title | Efficiently Luminescent Materials Based on Semiconductor Nanostructures for White-Light-Emitting Diodes | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳志毅(Chih-I Wu),蘇國棟(Guo-Dung Su),黃鼎偉(Ding-Wei Huang) | |
| dc.subject.keyword | 白光發光二極體,螢光粉,半導體奈米結構,光子,氧化鋅,硒化鋅,硫化鋅, | zh_TW |
| dc.subject.keyword | white-light-emitting diodes,phosphors,semiconductor nanostructures,photonics,zinc oxide,zinc sulfide,zinc selenide, | en |
| dc.relation.page | 112 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2014-01-27 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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| ntu-103-1.pdf 未授權公開取用 | 6.44 MB | Adobe PDF |
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