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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58541完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 何志浩(Jr-Hau He) | |
| dc.contributor.author | Yu-Hsuan Hsiao | en |
| dc.contributor.author | 蕭宇瑄 | zh_TW |
| dc.date.accessioned | 2021-06-16T08:19:09Z | - |
| dc.date.available | 2015-03-09 | |
| dc.date.copyright | 2014-03-09 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-02-07 | |
| dc.identifier.citation | Chapter 1:
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/58541 | - |
| dc.description.abstract | 自1990年代中期中村修二博士提出高亮度藍光氮化銦鎵發光二極體以來，氮化銦鎵元件迅速發展，如今已商業化的產品涵蓋由近紫外光到綠光的固態照明元件以及半導體雷射。如今氮化銦鎵發光二極體多採用多重量子井結構，亦即其主動層由多層的氮化銦鎵與氮化鎵交疊構成，而每層厚度僅數奈米。在此奈米尺度的能階變化可使載子侷限在能隙較窄的氮化銦鎵層，使得複合效率增加。
相較於空氣的折射率為1，氮化鎵材料的折射率約為2.5，如此大的折射率差異造成光穿越介面時會有相當大的損耗。表面損耗涵蓋了 (1)菲涅耳反射損耗與 (2)全內反射損耗兩類。菲涅耳反射損耗是由於在介面的折射率差異，造成光穿越介面時會有部分反射。全內反射發生在光由折射率較大的介質入射到折射率較小的介質時，若光以大於臨界角的角度入射，會全部被反射回折射率較大的介質。以司乃耳定律計算可得到，若光由折射率2.5的氮化鎵入射至空氣中，其臨界角僅約23度；亦即大於23度角的光都會被反射回元件。此二個原因造成氮化銦鎵發光二極體的光萃取效率低落。 藉由在表面製造奈米等級的結構可以增進發光二極體的光萃取。此現象一般可由等效折射率理論解釋：由於奈米結構由介質與空氣混合而成，因此等效上可視為一層折射率介於兩者之間的材料。藉由改變奈米結構的形貌，就可以實現折射率由半導體層漸變至空氣，此漸變折射率可以有效的減少表面的反射損耗，增加光萃取。在第一部分的實驗中，我們選擇了氧化鋅作為表面奈米結構的材料。由於氧化鋅的吸收波段在紫外光（直接能隙3.3 eV），且其折射率為2介於氮化鎵與空氣之間，因此為製作表面結構的理想材料。再者，氧化鋅結構可以由水熱法製成，此水溶液製程之製程溫度僅約攝氏100度，相較於氮化銦鎵量子井結構的磊晶製作約要700 ~ 1000度為低，因此較不會影響元件的電性。藉由調變製程參數更可以製作出多樣化的氧化鋅奈米結構，例如奈米柱、奈米錐，及奈米針狀結構等。本實驗中以針筒狀氧化鋅結構增進氮化銦鎵發光二極體的光萃取，並可以實現較為集中的光型分布。此效應可由針筒狀氧化鋅結構的波導效應解釋，論文中並以綠光雷射及時域有限差分法模擬驗證此奈米波導效果，亦比較了針筒狀氧化鋅結構及柱狀氧化鋅結構的光萃取效果。 另一方面，氮化銦鎵量子井結構也可以作為太陽能電池使用。藉由調整主動層中銦與鎵的含量，氮化銦鎵材料的能階可以涵蓋整個太陽頻譜。Wu等人在2003年發表的文獻中指出氮化銦鎵材料相較於傳統的三五族材料有較好的抗輻射效果。在第二部分的實驗中，我們使用高能質子轟擊氮化銦鎵元件，模擬太空輻射並觀察缺陷對其效率的影響。結合氮化銦鎵材料可調整能隙的特性及對其抗輻射能力的研究，此類型的太陽能電池將可望應用於太空環境。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-16T08:19:09Z (GMT). No. of bitstreams: 1 ntu-103-R00941119-1.pdf: 4361884 bytes, checksum: da1cc423338a1bee779daf10bd86a4ee (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | Chapter 1 － Literature Review：Employing Nanotechnology for Photon Management in InGaN-Based Multiple Quantum Well Light-Emitting-Diodes
1.1 Introduction ... 1 1.2 Photon Management ... 2 1.3 Types of Nanostructures ... 5 1.4 Remaining Challenges and Future Outlooks ... 13 1.5 References ... 20 Chapter 2 － Light Extraction Enhancement and Radiation Pattern Shaping in InGaN-based LEDs via Wave-guiding Effect of Syringe-like ZnO Nanorods 2.1 Introduction ... 27 2.2 Experiment ... 29 2.3 Results and Discussions ... 30 2.4 Summary ... 37 2.5 References ... 40 Chapter 3 － Radiation Resisting In0.15Ga0.85N/GaN Multiple Quantum Well Solar Cells 3.1 Introduction ... 41 3.2 Experiment ... 42 3.3 Results and Discussions ... 43 3.4 Summary ... 49 3.5 References ... 54 Curriculum Vitae ... 55 Publication List ... 56 | |
| dc.language.iso | en | |
| dc.subject | 氮化銦鎵 | zh_TW |
| dc.subject | 光萃取 | zh_TW |
| dc.subject | 針筒狀氧化鋅奈米結構 | zh_TW |
| dc.subject | 波導效應 | zh_TW |
| dc.subject | 抗輻射能力 | zh_TW |
| dc.subject | InGaN | en |
| dc.subject | Radiation Resistance | en |
| dc.subject | Wave-guiding Effect | en |
| dc.subject | Photon Management | en |
| dc.subject | Syringe-like ZnO Nanostructure | en |
| dc.title | 氮化銦鎵量子井元件的光管理與抗輻射 | zh_TW |
| dc.title | Photon management and radiation resistance of InGaN-based quantum well devices | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 鍾仁傑,黃昆平,吳肇欣 | |
| dc.subject.keyword | 氮化銦鎵,光萃取,針筒狀氧化鋅奈米結構,波導效應,抗輻射能力, | zh_TW |
| dc.subject.keyword | InGaN,Photon Management,Syringe-like ZnO Nanostructure,Wave-guiding Effect,Radiation Resistance, | en |
| dc.relation.page | 58 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2014-02-10 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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