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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 光電工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/57744
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor何志浩(Jr-Hau He)
dc.contributor.authorChun-Ho Linen
dc.contributor.author林群賀zh_TW
dc.date.accessioned2021-06-16T07:01:10Z-
dc.date.available2024-12-31
dc.date.copyright2014-07-29
dc.date.issued2014
dc.date.submitted2014-07-16
dc.identifier.citation1. Lien, W. C. et al. Low-temperature, ion beam assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection. IEEE Electron Device Lett. 32, 1564–1566 (2011).
2. Tsai, D. S. et al. n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection. Optics Lett. 37, 1112–1114 (2012).
3. Tsai, D. S. et al. Solar-blind photodetectors for harsh electronics. Sci. Rep. 4, 2628 (2013).
4. Wei, T. C. et al. See-through Ga2O3 solar-blind photodetectors for use in harsh environments. IEEE J. Sel. Top. Quant. Electron. 20, 3802006-1–3802006-6 (2014).
5. Lin, C. A., Tsai, D. S., Chen, C. Y. & He, J. H. Significant enhancement of yellow-green light emission of ZnO nanorod arrays using Ag island films. Nanoscale 3, 1195–1199 (2011).
6. Soci, C. et al. ZnO nanowire UV photodetectors with high internal gain. Nano Lett. 7, 1003–1009 (2007).
7. He, J. H. et al. Enhancing UV photoconductivity of ZnO nanobelt by polyacrylonitrile functionalization. J. Appl. Phys. 102, 084303-1–084303-4 (2007).
8. Jung, I. H., Shin, G. C., Malyarchuk, V., Ha, J. S. & Rogers, J. A. Paraboloid electronic eye cameras using deformable arrays of photodetectors in hexagonal mesh layouts. Appl. Phys. Lett. 96, 021110-1–021110-3 (2010).
9. Hsu, C. Y. et al. Supersensitive, ultrafast, and broad-band light-harvesting scheme employing carbon nanotube/TiO2 coreshell nanowire geometry. ACS Nano 6, 6687–6692 (2012).
10. Tsai, D. S. et al. Few layer MoS2 with broadband high photogain and fast optical switching for use in harsh environments. ACS Nano 7, 3905–3911 (2013).
11. Rogers, J. A., Someya, T. & Huang, Y. G. Materials and mechanics for stretchable electronics. Science 327, 1603–1607 (2010).
12. Kim, D. H., Xiao, J. L., Song, J. H., Huang, Y. G. & Rogers, J. A. Stretchable, curvilinear electronics based on inorganic materials. Adv. Mater. 22, 2108–2124 (2010).
13. Kim, D. H. et al. Stretchable and foldable silicon integrated circuits. Science 320, 507–511 (2008).
14. Wang, S. et al. Large-area free-standing ultrathin single-crystal silicon as processable materials. Nano Lett. 13, 4393–4398 (2013).
15. Kim, D. H. et al. Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations. Proc. Natl. Acad. Sci. U.S.A. 105, 18675–18680 (2008).
16. Yan, C., Cho, J. H. & Ahn, J. H. Graphene-based flexible and stretchable thin film transistors. Nanoscale 4, 4870–4882 (2012).
17. Pu, J., Li, L. J. & Takenobu, T. Flexible and stretchable thin-film transistors based on molybdenum disulphide. Phys Chem Chem Phys., DOI: 10.1039/c3cp55270e (2014).
18. Li, R., Li, M., Su, Y. W., Song, J. H. & Ni, X. Q. An analytical mechanics model for the island-bridge structure of stretchable electronics. Soft Matter 9, 8476–8482 (2013).
19. Hung, P. J., Jeong, K., Liu, G. L. & Lee, L. P. Microfabricated suspensions for electrical connections on the tunable elastomer membrane. Appl. Phys. Lett. 85, 6051–6053 (2004).
20. Choiet, W. M. et al. Biaxially stretchable “wavy” silicon nanomembranes. Nano Lett. 7, 1655–1663 (2007).
21. Russo, A. et al. Pen-on-paper flexible electronics. Adv. Mater. 23, 3426–3430 (2011).
22. Tobjork, D. & Osterbacka, R. Paper electronics. Adv. Mater. 23, 1935–1961 (2011).
23. Kim, Y. H., Moon, D. G. & Han, J. I. Organic TFT array on a paper substrate. IEEE Electron Device Lett. 25, 702–704 (2004).
24. Leonat, L. et al. 4% efficient polymer solar cells on paper substrates. J. Phys. Chem. C, DOI: 10.1021/jp5020912 (2014).
25. Kim, J. Y. et al. Paper as a substrate for inorganic powder electroluminescence devices. IEEE Trans. Electron Devices 57, 1470–1474 (2010).
26. Yang, L., Rida, A., Vyas, R. & Tentzeris, M. M. RFID tag and RF structures on a paper substrate using inkjet-printing technology. IEEE Trans. Microw Theory Tech. 55, 2894–2901 (2007).
27. Martins, R. et al. Write-erase and read paper memory transistor. Appl. Phys. Lett. 93, 203501-1–203501-3 (2008).
28. Aga, R. S., Lombardi, J. P., Bartsch, C. M. & Heckman, E. M. Performance of a printed photodetector on a paper substrate. IEEE Photonics Technol. Lett. 26, 305–308 (2014).
29. Lim, W. et al. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates. Appl. Phys. Lett. 96, 053510-1–053510-3 (2010).
30. Ni, Z. H. et al. Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. ACS Nano 2, 2301–2305 (2008).
31. Pan, H. & Zhang, Y. W. Tuning the electronic and magnetic properties of MoS2 nanoribbons by strain engineering. J. Phys. Chem. C 116, 11752–11757 (2012).
32. Song, Z. et al. Origami lithium-ion batteries. Nat. Commun. 5, 3140-1–3140-6 (2014).
33. Schenk, M. & Guest, S. D. Geometry of Miura-folded metamaterials. Proc. Natl. Acad. Sci. U.S.A. 110, 3276–3281 (2013).
34. Chen, C. Y. et al. Enhanced recovery speed of nanostructured ZnO photodetectors using nanobelt networks. IEEE J. Sel. Top. Quant. Electron. 18, 1807–1811 (2012).
35. Tsai, S. H. et al. Toward high efficiency of inverted organic solar cells: concurrent improvement in optical and electrical properties of electron transport layers. Appl. Phys. Lett. 102, 253111-1–253111-5 (2013).
36. Lien, W. C. et al. 4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450°C. IEEE Electron Dev. Lett. 33, 1586–1588 (2012).
37. Tsai, D. S. et al. Ultrahigh responsivity broadband detection of Si metal-semiconductor-metal Schottky photodetectors improved by ZnO nanorod arrays. ACS Nano 5, 7748–7753 (2011).
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/57744-
dc.description.abstract本文中,我們藉由網絲網印技術在紙基板上製作出氧化鋅陣列光偵測器,並結合三浦摺疊折紙結構,成就超高可撓的摺紙式紙光偵測器。
在實驗中,我們呈現了紙光感測器的超高伸縮(伸縮高達1000%)特性、可彎曲(彎曲角度> 30度)特性以及可扭轉特性(扭轉高達360度)。除此之外,即使在高達85度的光入射角下,紙光偵測器在低伸縮狀態(伸縮從0%到500%)的光暗電流比變化幅度相當的小(從-20%到-40%),相比於高伸縮狀態(從500%到1000%)有很好的全向廣角量測特性。三浦折紙結構式的氧化鋅陣列紙光偵測器也具有高穩定及耐久性,我們分別對其做了400次週期性的伸縮、彎曲以及扭轉測試,顯示了紙光偵測器的高穩定度。在實際應用上,我們也量測了不同大小的光源,曲面以及不平坦表面,顯示超高可撓紙光偵測器良好的環境適應性。
這裡提出結合紙基板、折紙及氧化鋅陣列的新策略,將可進一步促進紙上電子元件以及超高可撓元件的發展。
zh_TW
dc.description.abstractZnO UV photodetector (PD) arrays based on paper using screen printed methods and Miura-origami (Miura-ori) technology exhibit ultra-high stretchable (strain: up to 1000%), bendable (bending angle: >30°) and twistable (twist angle: up to 360°) properties. Compared to under high strain (>500%), the AOI-dependent variation of PDCR is small (from -20% to -40%) under low strain (from 0% to 500%) even at the largest angle of incidence (85°), showing the ultra-high omnidirectional property. Moreover, ultra-stable performance of paper-based ZnO UV PD arrays with Miura-ori structures was measured even after 400-cycle stretching, bending and twisting processes, respectively, showing the outstanding capability for various practical conditions such as different size of light sources, various curve and uneven surfaces. Via the fusion of paper substrates, origami methods and ZnO UV PD unite cells, the strategy described here opens avenues to develop paper-based PDs with low-cost for the next-generation deformable optoelectronic applications.en
dc.description.provenanceMade available in DSpace on 2021-06-16T07:01:10Z (GMT). No. of bitstreams: 1
ntu-103-R01941100-1.pdf: 1279069 bytes, checksum: 0de50d929ca716c64ea2dd36d746fcd1 (MD5)
Previous issue date: 2014
en
dc.description.tableofcontents口試委員會審定書…………………………………………………………………………......I
誌謝……………………………………………………………………………………............II
摘要……………………………………………………………………………………….......III
Abstract…………………………………………………………………………………........IV
Contents………………………………………………………………………………............V
List of Figures……………………………………………………………………………..….VI
Chapter 1 Introduction …………………………………………………………………..….1
Chapter 2 Experiments……………………………………………………………….….….5
2.1 The fabrication of paper-based ZnO UV PD arrays with Miura-ori structures….....5
2.2 I–V measurement of paper-based ZnO UV PD arrays with Miura-ori structures....5
Chapter 3 Results and discussion…………….…………...........................................7
3.1 Fabrication of paper-based ZnO UV PD arrays with Miura-ori structures…...........7
3.2 High-stable operation and ultra-high deformability of paper-based ZnO UV PD arrays with Miura-ori structures…………………….…………………..…..........……….11
Chapter 4 Summary…………………………………………………………..…………....21
Supplementary Information……………………………………………...…………..….….22
Reference……………………………………………...……………………...………..…….25
dc.language.isoen
dc.subject氧化鋅zh_TW
dc.subject三浦摺疊zh_TW
dc.subject紫外光偵測器zh_TW
dc.subject紙電子元件zh_TW
dc.subject可伸縮電子元件zh_TW
dc.subjectMiura-origamien
dc.subjectUV photodetectoren
dc.subjectpaper-based electronicsen
dc.subjectstretchable electronicsen
dc.subjectZnOen
dc.title摺紙式紙光偵測器zh_TW
dc.titleSuper Deformable Photodetectors Based on Paper with Origami Sen
dc.typeThesis
dc.date.schoolyear102-2
dc.description.degree碩士
dc.contributor.oralexamcommittee林恭如(Gong-Ru Lin),郭浩中(Hao-chung Kuo),Boon S. Ooi(Boon S. Ooi)
dc.subject.keyword氧化鋅,三浦摺疊,紫外光偵測器,紙電子元件,可伸縮電子元件,zh_TW
dc.subject.keywordZnO,Miura-origami,UV photodetector,paper-based electronics,stretchable electronics,en
dc.relation.page30
dc.rights.note有償授權
dc.date.accepted2014-07-16
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept光電工程學研究所zh_TW
顯示於系所單位:光電工程學研究所

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