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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 梁啟德(Chi-Te Liang) | |
dc.contributor.author | Wei-Ren Syong | en |
dc.contributor.author | 熊偉仁 | zh_TW |
dc.date.accessioned | 2021-06-16T06:32:11Z | - |
dc.date.available | 2020-08-04 | |
dc.date.copyright | 2020-08-04 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-07-24 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/56973 | - |
dc.description.abstract | 近年來探索二維材料及研究量子傳輸特性是熱門的話題。在此篇論文中,我們分別探討了成長在碳化矽超低電洞密度單層石墨烯及矽金氧半場效電晶體量子點的電傳輸效應。在量測這些元件的電傳輸特性時,我們發現有許多特別的物理特性,因此特別對這些特性進行解釋。 針對超低電洞密度單層石墨烯電性隨溫度及磁場的研究,我們發現此樣品在不同溫度區間有不同的磁阻趨勢。另外,對於在低溫下有顯著的磁阻比,使其在未來有作為低溫磁感測元件的應用。 而在矽金氧半場效電晶體量子點電性量測方面,我們觀察到除了量子點應有的庫侖震盪效應,通過溫度相依的測量也獲得了電壓與能量的關係。在不同次的降溫過程觀察到可重複的庫侖震盪結果確認了量子點的表現來自可調控靜電場的空乏閘極(depletion gates, DGs)。通過調變單一位障的高度,預期觀察到兩空乏閘極對位障的控制能力外,由於Si / SiO2系統的高度無序(high disorder),使得在空乏電壓(VDGs)不足的情況下,兩位障轉為由雜質主導。另外,從數值模擬的結果觀察到,由於DGs形成的兩個位障的重疊,使量子點的化學位能嚴重受DGs的影響。此結果說明了元件幾何形狀對於電子點電性有相當嚴重的影響。透過我們的測量結果確認了Si-MOS量子點元件的可用性。此篇論文的研究可促進未來Si-MOS量子位元(qubit)的發展。 | zh_TW |
dc.description.abstract | Recently, researching the physical properties of two-dimensional material and quantum transport of the electronic devices with nanoscale is a popular topic. In this thesis, we presented our work on ultralow-hole-density monolayer graphene on SiC and Si-MOS quantum dots separately. These studies will help us solve the problems that the quantum leak current seriously impacts the conventional transistors. From the studies on the electronic properties of ultralow-hole-density epitaxial graphene with different temperatures and magnetic fields, we observed a crossover from NMR to PMR at T = 40 K in the magnetic field smaller than 0.3 T. In addition, the MR ratio is most significant at T = 120 K and becomes weaker at higher temperatures. It indicates that ultralow-hole-density monolayer graphene can be a good application in magnetic sensing devices at low temperature. From the electronic properties of Si-MOS QD, the Coulomb charging effects were observed. The addition energy was extracted by the temperature-dependent measurements. Apart from this, the replicable results in thermal cycle ensured that the behavior of quantum dot is due to the electrostatic potentials of the depletion gates. By varying the height of single barrier, the abilities of each DG were investigated. However, the high level of disorder in Si/SiO2 system made the Coulomb oscillation be observed even if the VDGs are not negative enough to from the barriers. Finally, the numerical simulations presented that the overlap of two barriers, which strongly impacted the chemical potential of QDs. It explained that the geometry of the devices would influence the electronic properties of the devices. Our work confirmed the availability of the Si-MOS quantum dot device, and it would promote the development of qubits in the future. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T06:32:11Z (GMT). No. of bitstreams: 1 U0001-2307202012143600.pdf: 4674289 bytes, checksum: dc9fbc3fa12231de968ef50c07a09aa9 (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | 口試委員會審定書 # 致謝 i 中文摘要 ii ABSTRACT iii CONTENTS v LIST OF FIGURES viii Chapter 1 Introduction 1 1.1 Ultralow-hole-density Graphene on SiC 1 1.2 Si-MOS Quantum Dots 3 REFERENCES 5 Chapter 2 Theoretical Background 6 2.1 Elementary Physical Properties of Graphene 6 2.2 Drude Model 8 2.3 Variable Range Hopping 9 2.3.1 Mott Variable Hopping 10 2.3.2 Efros-Shklovskii Variable Range Hopping 11 2.3.3 Resistance Curve Derivative Analysis 12 2.4 Weak Localization and Universal Conductance Fluctuations 13 2.4.1 Weak Localization 13 2.4.2 Universal Quantum Fluctuations 14 2.5 Quantum Hall Effect 15 2.6 Si-MOS Quantum Dots 18 2.7 Coulomb Blockade 20 2.7.1 Peak Spacing of Coulomb Oscillation 23 2.7.2 Temperature Dependence of the Resonant Peaks 23 2.7.3 Dependence of Thermal Cycle 27 REFERENCES 28 Chapter 3 Device Fabrication and Measurement Technique 30 3.1 Ultralow-Hole Density Epitaxial Graphene 30 3.2 Si-MOS Quantum Dots 32 3.3 Cryogenic System 38 3.4 Measurement Technique 39 3.4.1 Four-terminal Resistance Measurements 39 3.4.2 Two-terminal Measurement with Gate Bias 40 3.5 Acknowledgements 41 REFERENCES 42 Chapter 4 Transport in Ultralow-hole-density Graphene and Transport through a Si-MOS Quantum Dot Device 43 4.1 Ultralow-hole Density Graphene 43 4.1.1 Electrical Properties in the Low-field Regime 43 4.1.2 A Crossover Between Negative Magnetoresistivity and Positive Magnetoresistivity 49 4.1.3 The Magnetoresistivity Ratio 50 4.2 Si-MOS quantum dot devices 51 4.2.1 Pre-operation 51 4.2.2 Periodic Oscillations of Conductance 53 4.2.3 Amplitude and Position of Resonant Peaks 59 4.2.4 Simulation of the Potential in the Dot 65 REFERENCES 67 Chapter 5 Conclusion 68 5.1 Ultralow-hole-density Graphene 68 5.2 Si-MOS Quantum Dot Devices 68 | |
dc.language.iso | en | |
dc.title | 超低電洞濃度單層外延石磨墨烯及矽量子點之電傳輸特性之研究 | zh_TW |
dc.title | Electronic Transport Properties of Ultralow-hole-density Monolayer Epitaxial Graphene and Si-MOS Quantum Dots | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 碩士 | |
dc.contributor.advisor-orcid | 梁啟德(0000-0003-4435-5949) | |
dc.contributor.oralexamcommittee | 管希聖(Hsi-Sheng Goan),李峻霣(Jiun-Yun Li) | |
dc.contributor.oralexamcommittee-orcid | 管希聖(0000-0001-8117-5846),李峻霣(0000-0003-4905-9954) | |
dc.subject.keyword | 碳化矽超低電洞密度單層石墨烯,磁阻,矽金氧半場效電晶體量子點,庫侖震盪效應, | zh_TW |
dc.subject.keyword | ultralow-hole-density monolayer graphene on SiC,magnetoresistivity,Si-MOS quantum dots,Coulomb oscillations, | en |
dc.relation.page | 69 | |
dc.identifier.doi | 10.6342/NTU202001768 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2020-07-24 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理學研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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