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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳奕君(I-Chun Cheng) | |
dc.contributor.author | Chia-Yun Chou | en |
dc.contributor.author | 周家筠 | zh_TW |
dc.date.accessioned | 2021-06-16T06:30:28Z | - |
dc.date.available | 2019-09-03 | |
dc.date.copyright | 2014-09-03 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-08-07 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/56863 | - |
dc.description.abstract | 本研究藉由自組裝聚苯乙烯奈米球形成規則排列的單層膜當作遮罩,利用奈米球微影術製作週期性奈米環形槽結構,作為氫化非晶矽薄膜太陽能電池之背反射電極。週期性奈米環形槽背反射電極能增加光的散射,同時產生表面電漿子共振使近場增強,進而提升氫化非晶矽薄膜太陽能電池之短路電流密度。實驗主要分為三部分,第一部分選定結構的深度為100 nm,改變奈米環形槽結構的週期,探討其對元件效率的影響;第二部分把環形槽週期固定於效率最高的條件後,我們再改變奈米環形槽結構的深度,探討結構深度和效率間的關係;第三部分將針對週期為500與1000 nm的環形槽結構,調變氧化鋅鋁厚度,得到最佳的背反射電極條件。
環形槽週期影響背反射電極的霧度頻譜,霧度會隨著週期增加而提升,進而增加太陽能電池效率。週期固定於最高效率的環形槽週期1000 nm後,接著我們比較三種不同環形槽深度,發現環形槽深度對效率的影響並不顯著。調變氧化鋅鋁厚度的實驗中,隨著氧化鋅鋁薄膜厚度減少,耦合至吸收層的電磁波電場強度增強,進而提升短路電流密度。在環形槽週期為1000 nm、深度為100 nm的情況下,相較於濺鍍沉積氧化鋅鋁厚度115 nm的背反射電極,在原子層沉積氧化鋅鋁8 nm的條件下,電池效率增加了12.9% (5.66%→6.39%)。 | zh_TW |
dc.description.abstract | A self-assembled close-packed monolayer of polystyrene (PS) spheres was deposited as a mask to fabricate periodic anti-ring structures using nanosphere lithography (NSL) technique. The periodic anti-ring structures were employed as back reflectors in hydrogenated amorphous (a-Si:H) silicon thin-film solar cells; this arrangement raised the scattering effect and induced the surface plasmon polariton to enhance the near-field electromagnetic wave intensity, which thereby improved the photocurrent density and efficiency of the solar cells. The effects of periods and depths of anti-ring arrays, as well as the AZO (Al-doped ZnO) thicknesses on the performance of hydrogenated amorphous silicon thin-film solar cells were investigated.
The haze was dependent on the periods of the anti-ring arrays. A larger period led to a higher haze for the back reflector, resulting in better solar cell efficiency. With a fixed period of 1000 nm, solar cells with anti-ring arrays of various depths were fabricated. However, no significant difference in efficiency was noted. Next, the performance of solar cells with anti-ring arrays of various AZO thicknesses was examined. As the AZO thickness decreases, stronger electric field intensity was coupled into the absorption layer, leading to the increases of the photocurrent density and cell efficiency. With an anti-ring back-reflector of 1000 nm in period and 100 nm in depth, the solar cell with ALD-deposited 8-nm-thick AZO reached an efficiency of 6.39%—an improvement of 12.9% compared to that with sputter-deposited 115-nm-thick AZO layer. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T06:30:28Z (GMT). No. of bitstreams: 1 ntu-103-R01941017-1.pdf: 4388549 bytes, checksum: ccaeddf4ad367485eb4b91ca1ed6ec0d (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 中文摘要 i
Abstract ii 目錄 iv 圖目錄 vi 表目錄 ix 第一章 緒論 1 1.1 氫化非晶矽薄膜太陽能電池簡介 1 1.2 背反射電極簡介 5 1.3 研究動機 7 1.4 論文架構 7 第二章 基本原理與文獻回顧 8 2.1 金屬表面電漿子 8 2.1.1 侷域性表面電漿子 9 2.1.2 表面電漿電磁耦子 10 2.1.3 表面電漿子在太陽能電池上的應用 12 2.2 週期性奈米結構背反射電極文獻回顧 13 第三章 實驗方法 16 3.1 實驗儀器 16 3.1.1 電子束蒸鍍 16 3.1.2 熱蒸鍍 17 3.1.3 濺鍍 17 3.1.4 原子層沉積 18 3.1.5 電漿輔助化學氣相沉積 19 3.1.6 反應式離子蝕刻 20 3.2 實驗流程 21 3.2.1 基板 21 3.2.2 單層奈米球膜 21 3.2.3 奈米環形槽陣列 22 3.2.4 各層薄膜沉積 23 3.3. 量測分析 25 3.3.1 原子力顯微鏡 25 3.3.2 掃描式電子顯微鏡 26 3.3.3 分光光譜儀 27 3.3.4 太陽能模擬系統 28 3.3.5 外部量子效率 28 第四章 實驗結果與討論 29 4.1 奈米環形槽陣列週期 29 4.1.1 AFM與SEM圖 29 4.1.2 背反射電極光學性質 34 4.1.3 元件特性 38 4.2 奈米環形槽陣列深度 41 4.2.1 AFM與SEM圖 41 4.2.2 背反射電極光學性質 46 4.2.3 元件特性 48 4.3 氧化鋅鋁厚度 50 4.3.1 背反射電極光學性質 53 4.3.2 週期為500 nm,元件特性 54 4.3.3 週期為1000 nm,元件特性 56 4.4 綜合比較 58 第五章 結論 59 附錄I 平坦的背反射電極,不同氧化鋅鋁厚度 60 附錄II 環形槽週期為300 nm,不同氧化鋅鋁厚度 62 附錄III 環形槽週期為1000 nm,不同銀厚度 64 參考文獻 66 | |
dc.language.iso | zh-TW | |
dc.title | 週期性奈米環形槽結構於氫化非晶矽薄膜太陽能電池之應用 | zh_TW |
dc.title | Application of periodic anti-ring nanostructure on hydrogenated amorphous silicon thin-film solar cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳建彰(Jian-Zhang Chen),吳志毅(Chih-I Wu),吳育任(Yuh-Renn Wu),李偉立(Wei-Li Lee) | |
dc.subject.keyword | 氫化非晶矽薄膜太陽能電池,背反射電極,表面電漿子,奈米球微影術,週期性奈米結構, | zh_TW |
dc.subject.keyword | hydrogenated amorphous silicon thin-film solar cell,back reflector,surface plasmon polariton,nanosphere lithography,periodic nanostructure, | en |
dc.relation.page | 70 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2014-08-08 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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