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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李君浩(Jiun-Haw Lee) | |
| dc.contributor.author | Chuan-En Lin | en |
| dc.contributor.author | 林傳恩 | zh_TW |
| dc.date.accessioned | 2021-06-16T05:30:47Z | - |
| dc.date.available | 2019-08-17 | |
| dc.date.copyright | 2014-08-17 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-08-13 | |
| dc.identifier.citation | [ ] M. Park, S. Ahn, J. H. Yun, J. Gwak, A. Cho, S. Ahn, K. Shin, D. Nam, H. Cheong, and K. Yoon, J. Alloys Compd. 513, 68 (2012).
[2] P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz,R. Menner, W. Wischmann, and M. Powalla, Prog. Photovolt. 19, 894 (2011). [3] T. Tmoco, C. Rincon, M. Quintero, and G. Sanchez Perez, phys. stat. sol. 124, 427 (1991). [4] A. Compan, and S. Matulionis, Opt. Lasers Eng. 34, 15 (2000). [5] A. Burn, V. Romano, M. Muralt, R. Witte, B. Frei, S. Bucheler, and S. Nishiwaki, Proc. of SPIE. 8243, 824318 (2014). [6] P. Gecys, G. Raciukaitis, A. Wehrmann, K. Zimmer, A. Braun, and S. Ragnow, Journal of Laser Micro/Nano engineering. 7, 1 (2012). [7] P. Gecys, G. Raciukaitis, E. Miltenis, A. Braun, and S. Ragnow, Phys. Procedia. 12, 141 (2011). [8] A. V. Mudryi, I. A. Victorov, V. F. Gremenok, A. I. Patuk, I. A. Shakin, M. V. Yakushev, Thin Solid Film. 431, 197 (2003). [9] T. H. Cheng , W. W. Hsu , C. Y. Huang, J. A. Lu, J. Y. Chen, and C. W. Liu, 218th ECS Meeting (2010). [10] B. Ohnesorge, R. Weigand, G. Bacher, A. Forchel, W. Riedl, and F. H. Karg, Appl. Phys. Lett. 73, 1224 (1998). [ 1] W. K. Metzger, I. L. Repins, and M. A. Contreras, Appl. Phys. Lett. 93, 022110 (2008). [ 2] S. Shirakata, S. Yudate, J. Honda, and N. Iwado, Jpn. J. Appl. Phys. 50, 790 (2011). [ 3] T. Minemoto, and J. Julayhi, Current. Appl. Phys. 13, 103 (2013). [ 4] K. Kim, L. Larina, J. H. Yun, K. H. Yoon, H. S. Kwon, and B. T. Ahn, Phys. Chem. Chem. Phys. 15, 9239 (2013). [ 5] B. T. Ahn, L. Larina, K. H. Kim, and S. J. Ahn, Pure Appl. Chem. 80, 10, 2091 (2008). [ 6] M. Nakamura, Y. Kouji, Y. Chiba, H. Hakuma, T. Kobayashi, and T. Nakada, Proceedings of the 39th IEEE Photovoltaic Specialists Conference (2013). [ 7] U. Zimmermann, M. Ruth, and M. Edoff, Proceedings of the 21st European Photovoltaic Solar Energy Conference. 1831 (2006). [ 8] R. Klenk, A. Steigert, T. Rissom, D. Greiner, C. A. Kaufmann, T. Unold, and M. C. Lux-Steiner, Prog. Photovolt. 10, 1002 (2013). [ 9] L. Kronik, D. Cahen, and H.W. Schock, Adv.Mater.10, 31(1998). [20] T. Nakada, D. Iga, H. Ohbo, and A. Kunioka, Jpn. J. Appl. Phys. 36, 732 (1997). [2 ] D. J. Schroeder, and A. Rockett, J. Appl. Phys. 82, 4982 (1997) [22] D. Rudmann, G. Bilger, M. Kaelin, F. J. Haug, H. Zogg, and A. N. Tiwari, Thin Solid Films. 37, 431 (2003). [23] P. Blösch, S. Nishiwaki, A. Chirila, L. Kranz, C. Fella, F. Pianezzi, C. Adelhelm, E. Franzke, S. Buecheler, and A. N. Tiwari, Thin Solid Films. 535, 214 (2013). [24] S. Ye, X. Tan, M. Jiang, B. Fan, K. Tang, and S. Zhuang, Appl. Opt. 49, 1662 (2010). [25] J. H. Yun, K. H. Kim, B. T. Ahn, and K. H. Yoon, Proceedings of the Conference Record of the 2006 IEEE 4th World Conference. 509 (2006). [26] D. Rudmann, A. F. daCunha, M. Kaelin, F. Kurdesau, H. Zogg, A. N. Tiwari, and G. Bilger, Appl. Phys. Lett. 84, 1129 (2004). [27] P. Blosch , S. Nishiwaki , L. Kranz , C. M. Fella , F. Pianezzi , T. Jager , C. Adelhelm , E. Franzke , S. Buecheler , and A. N. Tiwari , Sol. Energy Mater. Sol. Cells. 124, 10 (2014). [28] M. G. Mason, C. W. Tang, L. S. Hung, P. Raychaudhuri, J. Madathil, D. J. Giesen, L. Yan, Q. T. Le, Y. Gao, S. T. Lee, L. S. Liao, L. F. Cheng, W. R. Salaneck, D. A. dos Santos, and J. L. Bredas, J. Appl. Phys. 89, 2756 (2001). [29] C. Adachi, M. A. Baldo, M. E. Thompson , and S. R. Forrest, J. Appl. Phys. 90, 5048 (2001). [30] L. S. Liao, K. P. Klubek, M. J. Helber, L. Cosimbescu, and D. L. Comfort, Research & Development, Eastman Kodak Company (1999) [31] S. Tokito, T. Iijima, Y. Suzuri, H. Kita, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 569 (2003). [32] Y. J. Cho, and J. Y. Lee, J. Phys. Chem. C. 115, 10272 (2011). [33] R. J. Holmes, S. R. Forrest, Y. J. Tung, R. C. Kwong, J. J. Brown, S. Garon, and M. E. Thompson, Appl. Phys. Lett. 82, 15 (2003). [34] T. Hasumi, S. Takasugi, K. Kanoh, and Y. Kobayashi, Proceedings of SID’06. 1547 (2006). [35] C. W. Lee, and J. Y. Lee, Adv. Mater. 25, 5450 (2013). [36] C. W. Lee, and J. Y. Lee, Chem. Mater. 26, 1616 (2014). [37] B. Pan, B. Wang, Y. Wang, P. Xu, L. Wang, J. Chen, and D. Ma, J. Mater. Chem. C. 2, 2466 (2014). [38] J. Lee, J. I. Lee, J. Y. Lee, and H. Y. Chu, Appl. Phys. Lett. 94, 193305 (2009). [39] Y. Chen, J. Chen, Y. Zhao, and D. Ma, Appl. Phys. Lett. 100, 213301 (2012). [40] J. Lee, J. I. Lee, J. Y. Lee, and H. Y. Chu, Org. Electron. 10, 1529 (2009). [41] Y. H. Chen, J. S. Chen, Y. B. Zhao, and D. Ma, Appl. Phys. Lett. 100, 213301 (2012). [ ] 汪宗信台大碩士論文. [2] T. T. Wu, F. Hu, J. H. Huang, C. H. Chang, C. C. Lai, Y. T. Yen, H. Y. Huang, H. F. Hong, Z. M. Wang, C. H. Shen, J. M. Shieh and Y. L. Chueh, ACS Appl. Mater. Interfaces. 6, 4842 (2014). [3] T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, W. C. Chen, Solid State Electronics. 56, 175 (2011). [4] M. T. Sheldon, C. N. Eisler and H. A. Atwater, Adv. Energy Mater. 2, 339 (2012). [5] 林伯彥台大碩士論文 [1] S. Ishizuka, A. Yamada, M. M. Islam, H. Shibata, P. Fons, T. Sakurai, K. Akimoto , and S. Niki, J. Appl. Phys. 106, 034908 (2009). [2] M. T. Sheldon, C. N. Eisler , and H. A. Atwater, Adv. Energy Mater. 2, 339 (2012). [1] Y. S. Park , S. Lee , K. H. Kim , S. Y. Kim , J. H. Lee , and J. J Kim, Adv. Mater. 23, 4914 (2013). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/56482 | - |
| dc.description.abstract | 本論文主要為以硫化三正辛基磷於銅銦鎵硒薄膜及元件上之表面鈍化處理並探討其機制及以不同之主體材料實現高效率藍光磷光元件。
我們利用硫化三正辛基磷 (Trioctlyphosphine:Sulfide)來進行銅銦鎵硒薄膜及元件上之表面鈍化處理並探討其機制。在薄膜方面，我們藉由穩態光激發光頻譜及時間解析光激發光頻譜檢測鈍化處理之效果。在最佳化鈍化處理之溫度及時間參數後 (120 oC, 6 hr)，我們有效提升銅銦鎵硒薄膜之光激發光強度 (18.0倍)及載子壽命 (3.0倍)。元件方面，我們透過鈍化處理補償元件切割所產生之缺陷，並有效提升元件效率 (1.3%)、短路電流 (1.0%)及並聯電阻 (40.0%)。並將鈍化處理導入元件製程，透過表面及側向缺陷、懸浮鍵補償，有效降低元件漏電流並提升元件效率 (1.4%)、短路電流 (6.5%)及並聯電阻 (8.3%)。 我們以3,-phenyl-4(1’-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) 當作主體材料並摻雜iridium bis(4,6-di-fluorophenyl- pyridinato-N,C2,)picolinate (FIrpic)為客體材料製作藍色磷光元件，藉由調變電子傳輸層、發光層厚度及摻雜濃度等，進而實現一電流效率42.01 cd/A 及功率效率 32.66 lm/W 的藍光元件，接著引入N,N’-dicarbazolyl-2,5-benzene (mCP) 製作混和式主體材料之藍光元件，藉由調整主體材料比例、電子傳輸層、電洞傳輸層、發光層厚度等，實現一效率達47.22 cd/A及31.66 lm/W，外部量子效率達21.22%。 另外，我們亦測試了由台大化學所梁文傑實驗室所提供之三種主體材料並製作藍光磷光元件，透過調整客體摻雜進而實現一最佳元件效率。其最佳電流效率、功率效率及外部量子效率分別為: 43.96 cd/A、 34.53 lm/W 及 18.50% (Cbz-oxd)、39.68 cd/A、 31.50 lm/W 及 14.90% (Cbz-bim)、41.05 cd/A、 32.24 lm/W 及 16.54% (Cbz-taz)。 | zh_TW |
| dc.description.abstract | In this thesis, we studied the surface passivation of Cu(ln1-xGax)Se2 thin films and solar cells with trioctlyphosphine:sulfide (TOP:S), and realized a high efficiency blue phosphorescent OLEDs with different host materials.
We used tricotlyphosphine:sulfide (TOP:S) to passivate CIGS thin film and CIGS solar cell. After TOP:S passivation (6 hr, 120 oC), optical intensity of steady state photoluminescence (PL) of CIGS thin film effectively enhanced 18.0 times and minority carrier lifetime (obtained from transient PL) improved 3.0 times. It means that TOP:S can effectively compensate the defects, impurities and dangling bonds on CIGS surface. For CIGS solar cell, we used TOP:S passivate the scribe induced damages and effectively improved device efficiency (1.3%), Jsc (1.0%) and Rsh (40%). When adding TOP:S passivation into a standard CIGS solar cell process before CdS CBD process, almost one order leakage current was improved after TOP:S passivation and enhancement of Jsc, PCE and Rsh were 6.5%, 1.4% and 8.3%, respectively. We used 3,-phenyl-4(1’-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) as host material and doped iridium bis(4,6-di-fluorophenyl- pyridinato-N,C2,)picolinate (FIrpic) to fabricate the blue phosphorescent OLEDs, which could achieve current efficiency of 42.01 cd/A and power efficiency of 32.66 lm/W via tuning the thickness of electron transporting layer (ETL), emitting layer (EML) and the doping concentration. Furthermore, we introduced N,N’-dicarbazolyl-2,5-benzene (mCP) into the device structure to fabricate the blue phosphorescent OLEDs with mixed host. Via the tuning of mixed ratio of host, the thickness of ETL , the thickness of HTL and the thickness of EML, the high current efficiency of 47.22 cd/A, power efficiency of 31.66 lm/W and external quantum efficiency of 21.22% were obtained. Furthermore, we tested three carbazole-containing biphenyls derivatives host (Cbz-oxd, Cbz-bim and Cbz-taz) which were synthesized by Prof. Man-kit Leung’s research group. Current efficiency, power efficiency and external quantum efficiency of three host materials achieved 43.96 cd/A, 39.68 cd/A and 41.05 cd/A, 34.53 lm/W, 31.50 lm/W and 32.24 lm/W, 18.50%, 14.90% and 16.54%, respectively. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T05:30:47Z (GMT). No. of bitstreams: 1 ntu-103-R01941061-1.pdf: 18917588 bytes, checksum: 09631789908a7a094e25c7600efc1a80 (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 摘要 3
Chapter 1 Introduction 17 1.1 Introduction to CIGS thin film solar cell 17 1.1.1 Overview 18 1.1.2 Scribed induced damage on CIGS solar cell 19 1.1.3 Photoluminescence measurement on CIGS thin film 22 1.1.4 Buffer layer 26 1.1.5 Alkali substrate and sodium incorporation into CIGS thin film 28 1.1.6 Motivation 30 1.2 Introduction of blue PhOLED 32 1.2.1 Introduction to OLED 32 1.2.2 Blue phosphorescent OLED 33 1.2.3 Motivation 37 1.3 References 38 Chapter 2 Experiment 43 2.1. Introduction 43 2.2. Device fabrication and measurement systems of Cu(In1-xGax)Se2 thin film solar cell 43 2.2.1 Fabrication of Cu(In1-xGax)Se2 thin film solar cell 43 2.2.2 Passivation with trioctlyphosphine sulfide 45 2.2.3 Steady state photoluminescence 46 2.2.5 Nitrogen cabinet process 46 2.2.6 Time resolved photoluminescence 51 2.2.7 X-ray photoelectron spectroscopy 53 2.3. Device fabrication and measurement system of OLEDs 53 2.4. References 54 Chapter 3 Surface passivation of Cu(In1-xGax)Se2 thin film solar cells with trioctlyphosphine:sulfide 56 3.1 Introduction 56 3.2 Surface passivation on CIGS thin film with different temperature and time 57 3.2.1 SSPL and TRPL study on CIGS thin film with passivation 57 3.2.2 TDPL study on CIGS thin film with passivation 65 3.3 XPS analysis on CIGS thin film before / after passivation 66 3.4 SEM/OM comparison before / after passivation 68 3.5 AC2 measurement on CIGS thin film before / after passivation 70 3.6 Scribe passivation on CIGS solar cells 72 3.7 Planar passivation on CIGS solar cell 78 3.7 References 82 Chapter 4 Blue phosphorescent organic light-emitting diodes with mixed host 83 4.1 Introduction 83 4.2 Optimization of blue phosphorescent TAZ host OLEDs 83 4.3 Optimization of blue phosphorescent mixed host OLEDs 95 4.4 Blue phosphorescent organic light-emitting diodes with carbazole-containing biphenyls derivatives host 112 4.5 References 127 Chapter 5 Summary 128 Appendix I Power dependent photoluminescence measurement on CIGS thin film 130 Appendix II Surface passivation on CIGS thin film with different temperature and solution 132 Appendix III Solution etching on CIGS thin film with Na2S 136 Appendix IV Voltage-dependent photoluminescence measurement on electron only device 140 Appendix V Study of recombination zone in mixed host with probing layer 148 Appendix VI Blue phosphorescent organic light-emitting diodes with high color stability 155 Appendix VII Blue phosphorescent organic light-emitting diodes with bipolar meta-cbz-imd derivatives as host material 160 | |
| dc.language.iso | zh-TW | |
| dc.subject | 混合式主體材料；表面鈍化；銅銦鎵硒薄膜太陽能電池 | zh_TW |
| dc.subject | Mixed host； surface passivation； CIGS thin film solar cell. | en |
| dc.title | 硫化三正辛基磷表面處理銅銦鎵硒薄膜太陽能電池及
混合式主體材料之藍色磷光有機發光二極體 | zh_TW |
| dc.title | Surface passivation of Cu(ln1-xGax)Se2 thin film solar cells with trioctlyphosphine:sulfide and blue phosphorescent organic light-emitting diode with mixed host | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 劉致為(Chee-Wee Liu),梁文傑(Man-Kit Leung),王俊凱(Juen-Kai Wang),沈昌宏(Chang-Hong Shen) | |
| dc.subject.keyword | 混合式主體材料；表面鈍化；銅銦鎵硒薄膜太陽能電池, | zh_TW |
| dc.subject.keyword | Mixed host； surface passivation； CIGS thin film solar cell., | en |
| dc.relation.page | 163 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2014-08-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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