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標題: | 鍺的自摻雜效應和外擴散效應對磷化銦鎵有序排列結構影響 The effect of Ge autodoping and outdiffusion on InGaP ordering |
作者: | Hao-I Ho 何浩一 |
指導教授: | 林浩雄 |
關鍵字: | 磷化銦鎵,鍺,價帶分裂,有序排列,自摻雜,外擴散, InGaP,Ge,valence band splitting,ordering,autodoping,outdiffusion, |
出版年 : | 2014 |
學位: | 碩士 |
摘要: | 本論文研究以有機金屬化學汽相沉積法將磷化銦鎵成長在鍺基板上,其受到鍺基板自摻雜與外擴散造成磊晶層內鍺原子濃度的不均勻,對於磷化銦鎵有序排列結構的影響。
我們以光激發螢光頻譜和二次離子質譜分析在不同深度下,樣品有序排列程度與鍺原子濃度的變化。由於鍺的自摻雜效應並不會在磊晶過程中影響表面排列(surface reconstruction),因此在edge樣品中,上層與中層鍺原子自摻雜濃度相同但是上層為有序排列程度較高,而中層為有序排列程度低。而鍺原子是在受熱擴散後破壞原有的有序排列結構,其過程與濃度和受熱時間相關,因此在center樣品中鍺原子濃度較低,所以有序排列程度比edge樣品還高;而edge樣品上層雖然鍺原子濃度高,但受熱時間還來不及使其擴散破壞有序排列,因此其有序排列程度與center樣品相同。我們並以快速熱退火加熱edge樣品來驗證我們的假設。 最後我們藉由樣品不同方向的極化放光得知在center樣品為只有CuPtB1的有序排列,而在edge樣品中存在有兩種排列程度的磷化銦鎵,其高能量訊號為無序排列的磷化銦鎵放光,低能量訊號為同時有CuPtB1和CuPtB2有序排列的磷化銦鎵放光。 This thesis investigates the InGaP ordering affected by the difference in Ge concentration in epilayer caused by autodoping and outdiffusion. We use photoluminescence and secondary ion mass spectroscopy to analyze the orderness and Ge concentration under different depth. Owing to the Ge autodoping won’t affect the surface reconstruction during the growth, in the edge sample, although the top layer and the middle layer have the same autodoping concentration, the middle layer has lower ordering. Ge will destroy the ordering structure by diffusion, and is related to Ge concentration and heating time. Because of the difference in Ge concentration, the ordering in the center sample is higher than that in the edge sample. And although the Ge concentration in the top layer of edge sample is high, the heating time isn’t enough for diffusion to destroy the ordering structure, so it keep the same ordering with center sample. This can be confirm in RTA treatment, after 600℃ annealing for 30 seconds, the ordering structure in the top layer of edge sample will no longer exists. Finally, we use different direction scattering of polarized PL to know that there is only CuPtB1 ordering structure in the center sample. And there are two degree of ordering in the edge sample, the disorder structure in the bottom layer and with CuPtB1 and CuPtB2 ordering in the top layer. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55800 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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