請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55749完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為 | |
| dc.contributor.author | Ya-Hsun Wu | en |
| dc.contributor.author | 吳亞洵 | zh_TW |
| dc.date.accessioned | 2021-06-16T05:08:00Z | - |
| dc.date.available | 2019-09-02 | |
| dc.date.copyright | 2014-09-02 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-08-19 | |
| dc.identifier.citation | [1] William Shockley and Hans J. Queisser, 'Detailed Balance Limit of Efficiency of p-n Junction Solar Cells', Journal of Applied Physics, Volume 32 (March 1961), pp. 510-519
[2] Solid State Phenomena (Volumes 156 - 158) [3] Daniel Macdonald et al. Appl. Phys. Lett., November 2004 [4] Yuan Taur, Tak H Ning, “fundamentals of modern VLSI devices”, p16 [5] R.J. Schwartz and M.D. Lammert, Silicon solar cells for high concentration applications, in Technical Digest of the International Electron Devices Meeting, Washington, DC, 350-2 (1975). [6] M.D. Lammert and R.J. Schwartz, The interdigitated back contact solar cell: a silicon solar cell for use in concentrated sunlight, IEEE Transactions on Electron Devices, ED-24 (4), 337-42, (1977). [7] R.M. Swanson, A.K. Beckwith, R.A. Crane, W.D. Eades, Y.H. Kwark, and R.A. Sinton, Point-contact silicon solar cells, IEEE Transactions on Electron Devices, 31 (5), 661-4, (1984). [8] Nicholas Bateman, Paul Sullivan, Christian Reiche, Jan Benick, Martin Hermle, High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency, SiliconPV 2011 Conference, Volume 8, 2011, Pages 509–514 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55749 | - |
| dc.description.abstract | 在本論文中，利用離子佈植方法形成P型射極以及N形背面電場而製成單晶矽N型太陽能電池。利用原子層沉積法(ALD)所成長的氧化鋁(Al2O3)作為表面射極的鈍化層，以及利用電漿輔助化學氣相沈積(PECVD)成長的氮化矽(SiNx)當作抗反射層，太陽能電池效率可以達到16%。更進一步的加入表面金字塔結構和背點電極所製作出的電池效率可以達到18% 以上。
指叉式背電極太陽能電池是一種能更進一步提升太陽能電池效率的結構。指叉式背電極太陽能電池可利用類似於傳統單晶矽太陽電池的製程製作，我們所製作出的指叉式背電極太陽能電池效率為7.8%。藉由Sentaurus TCAD 模擬軟體的幫助，我們可以找出影響太陽能電池效率的因子，在未來的製程中可以更進一步的提升電池效率。 薄型太陽電池是未來太陽能工業所發展的趨勢。在這篇論文中，藉由Sentaurus TCAD 模擬軟體探討了厚度對指叉式背電極太陽能電池效率的影響 | zh_TW |
| dc.description.abstract | In this thesis, n-type crystalline silicon solar cell is fabricated by using ion implantation to form the boron (p+) emitter and phosphorous (n+) back surface field. With atomic layer deposition (ALD) growth Al2O3 for emitter passivation and plasma enhanced chemical vapor deposition (PECVD) growth antireflection coating layer, the cell efficiency can reach around 16%. The additional textured surface and rear point contact can further improve the cell efficiency to over 18%.
The interdigitated back contact solar cell (IBC) is the promising cell type for further efficiency improving. The IBC cell is fabricated in this thesis using the similar technique of conventional crystalline silicon solar cell. The efficiency of the IBC cell we fabricate is 7.8%. With the aid of Sentaurus TCAD, the factor which influences the IBC cell efficiency is pointed out, and the efficiency can be further improved in the future. Thin solar cell is the future trend of the photovoltaic industry. The dependence of the IBC cell efficiency to the cell thickness is investigated by the Sentaurus TCAD in this thesis. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T05:08:00Z (GMT). No. of bitstreams: 1 ntu-103-R00943162-1.pdf: 5017255 bytes, checksum: 854664a27edc071537858b6f1921f45b (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | Acknowledgement i
摘 要 iii ABSTRACT iv LIST OF FIGURES v LIST OF TABLES vii CONTENTS 1 Chapter 1 Introduction 3 1.1 Motivation 3 1.2 Organization 4 Chapter 2 N type ion implanted solar cell fabrication and efficiency improvement 5 2.1 Introduction 5 2.2 The process flow of the solar cell 10 2.3 Rear point contact structure for cell efficiency improvement 18 2.4 Textured surface for cell efficiency improvement 22 2.5 summary 28 References 30 Chapter 3 The Interdigitated back contact (IBC) solar cell fabrication and simulation 31 3.1 Introduction 31 3.2 The review of the IBC solar cell 34 3.3 The fabrication of the IBC solar cell 38 3.4 The IBC cell efficiency measurement 44 3.5 The simulation of the IBC solar cell 47 3.6 Summary 48 Reference 49 Chapter 4 The investigation of factors that influence the IBC cell efficiency by simulation 50 4.1 Introduction 50 4.2 Gap simulation 50 4.3 The effect of the emitter ratio 54 4.4 The effect of the front surface field 57 4.5 The thickness dependence of IBC solar cell 59 4.6 Summary 63 Chapter 5 Summary and Future Work 65 5.1 Summary 65 5.2 Future Work 66 | |
| dc.language.iso | en | |
| dc.subject | TCAD模擬 | zh_TW |
| dc.subject | 離子佈植 | zh_TW |
| dc.subject | N型太陽電池 | zh_TW |
| dc.subject | 表面金字塔結構 | zh_TW |
| dc.subject | 叉式背電極太陽能電池 | zh_TW |
| dc.subject | texture | en |
| dc.subject | TCAD simulation | en |
| dc.subject | interdigitated back contact solar cell | en |
| dc.subject | ion implantation | en |
| dc.subject | N type solar cell | en |
| dc.title | 傳統式與背電極式單晶矽太陽能電池製程與模擬 | zh_TW |
| dc.title | The fabrication and simulation of the conventional and interdigitated back contact monocrystalline silicon solar cell | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林中一,張書通,林吉聰,劉國辰 | |
| dc.subject.keyword | 離子佈植,N型太陽電池,表面金字塔結構,叉式背電極太陽能電池,TCAD模擬, | zh_TW |
| dc.subject.keyword | ion implantation,N type solar cell,texture,interdigitated back contact solar cell,TCAD simulation, | en |
| dc.relation.page | 67 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2014-08-20 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-103-1.pdf 未授權公開取用 | 4.9 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。