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請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/54428
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor廖英志(Ying-Chih Liao)
dc.contributor.authorI-Feng Wuen
dc.contributor.author吳奕鋒zh_TW
dc.date.accessioned2021-06-16T02:56:20Z-
dc.date.available2025-08-04
dc.date.copyright2020-08-07
dc.date.issued2020
dc.date.submitted2020-08-04
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56. Reinhold, I., et al., Argon plasma sintering of inkjet printed silver tracks on polymer substrates. Journal of Materials Chemistry, 2009. 19(21): p. 3384-3388.
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/54428-
dc.description.abstract隨著電子產品的普及,透明導電膜被廣泛利用在各項產品中,如太陽能板、顯示面板等,都需要透明導電膜及透明導電玻璃作為元件。目前產業界中廣泛使用的透明導電膜以氧化銦錫作為原料,氧化銦錫具有良好的透光性以及導電性,為相當優秀的材料,利用濺鍍方式在玻璃基材上沉積出透明導電薄膜。然而,以上製程面臨許多挑戰:銦為稀有金屬,地球含量有限並且有枯竭的可能,並且濺鍍製程需要的設備條件較高,間接造成氧化銦錫透明導電薄膜價格居高不下。因此,近年有氧化銦錫回收製程的興起,將氧化銦錫透明導電玻璃重新回收後再利用。
本研究提出了一種利用氧化銦錫回收製備透明導電薄膜及圖樣並應用於印刷電子元件的技術。首先,將氧化銦錫由廢棄面板中回收,並且純化及球磨減小粒徑至約50 nm,並加入適當分散劑及黏合劑製成分散水力粒徑約145 nm導電墨水,結合刮刀塗布技術製為透明導電薄膜。利用光燒結技術可以有效的避免軟性高分子基材PET於燒結過程中損壞,1000焦耳分為4波段,並且進行4次多段燒結中間間隔時間3秒為最佳的參數,可以使燒結過後的導電薄膜片電阻下降100倍,達到約500 Ω/sq,並且透光度高於90%。製備出的透明導電PET可以承受多次撓曲、並且作為全透明電雙層電容,抑或結合噴墨印刷技術製備為透明導電線路使用。總而言之,本研究提出了一種新的回收氧化銦錫再製備為透明導電薄膜的方法,並且為回收氧化銦錫生命週期再延續技術方面拓展了一條嶄新的道路。
zh_TW
dc.description.abstractTransparent conductive films (TCFs) are extensively used in various products, such as solar cell module, display panel. With good optical transparency and electrical conductivity, indium tin oxide (ITO) is the most-used material for fabricating TCFs. However, because of the high demand and the scarcity of indium, TCFs are very expensive and indium exhaust problem also emerges recently. Therefore, there are researches which focus on ITO recycled process and further applications.
In this study, we combined ITO recycling process and printing technologies to manufacture transparent conductive films and patterns for flexible printed electronics applications. First, ITO was recycled from waste display panel, and further purification and size reduction process were applied to form ITO nanoparticles with primary particle size roughly 50 nm. Dispersant and binder were added to formulate conductive nanoparticle ink with hydraulic size roughly 145 nm. Then, blade coating was applied to form transparent conductive film on the substrate. Intense pulsed light (IPL) sintering with different parameters were tested to set the best sintering condition to increase the conductivity of TCFs. The best parameter for sintering was 1000 J divided into four small peaks (250 J each) repeated for four times pulses with 3 s time interval. ITO TCFs on PET substrate showed good conductivity (500 Ω/sq) and transparency (>90 %). Also, the TCF could withstand multiple times bending test with small sheet resistance change. TCFs could also applied as electrode for electrical double layer capacitor. Furthermore, by inkjet printing technology, transparent conductive patterns could also be fabricated without traditional etching process.
In summary, this research provides a new guideline for TCFs manufacturing with recycled ITO and provides a new way for reusing end-of-life display panel for transparent conductive films and patterns applications.
en
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en
dc.description.tableofcontents致謝 ii
中文摘要 iv
ABSTRACT v
目錄 vi
圖目錄 viii
表目錄 x
第一章 緒論 1
1.1研究背景 1
1.2研究動機與目的 2
1.3論文架構 2
第二章 文獻回顧 3
2.1 透明導電薄膜 (Transparent conductive film, TCF) 3
2.2 透明導電氧化物(Transparent conductive oxide, TCO) 5
2.2.1 TCO的導電機制 5
2.2.2 TCO的光學性質 8
2.3 氧化銦錫(Indium tin oxide, ITO)性質 10
2.4 氧化銦錫透明導電膜 12
2.5 回收氧化銦錫製程 15
2.6 氧化銦錫導電墨水 16
2.7 燒結技術 19
2.7.1 燒結原理 19
2.7.2 光燒結技術 20
2.7.3脈衝光燒結 22
第三章 實驗系統程序 26
3.1 實驗藥品與儀器介紹 26
3.1.1 實驗藥品 26
3.1.2 實驗儀器 27
3.2 實驗流程 28
3.2.1回收ITO製程 28
3.2.2 ITO墨水製備 29
3.2.3 脈衝光燒結機 30
3.2.4 刮刀塗布機 31
3.2.5 置備導電圖樣 31
第四章 回收氧化銦錫墨水製備導電薄膜及圖樣 33
4.1 ITO性質分析 33
4.1.1 顯示螢幕分解以及氧化銦錫回收製程 33
4.1.2 回收ITO粉末樣態分析 36
4.1.3奈米ITO墨水分散懸浮性 39
4.1.4 ITO奈米粒子吸收光譜 41
4.1.5 ITO薄膜binder添加量 42
4.1.6 ITO薄膜熱燒結性質 43
4.2 脈衝光燒結參數對ITO薄膜電阻之影響 45
4.2.1不同脈衝光燒結以及燒結次數對ITO薄膜片電阻影響 45
4.2.2脈衝光多段燒結次數對片電阻之影響 48
4.2.3脈衝光放光波段對ITO薄膜燒結之影響 50
4.2.4熱燒結、光燒結前後薄膜表面樣態 51
4.3 氧化銦錫墨水應用於薄膜以及圖樣化應用 53
4.3.1軟性可撓式氧化銦錫薄膜 53
4.3.2 軟性ITO透明導電膜用於全透明超級電容之應用 56
4.3.3 利用噴墨技術製備圖樣化氧化銦錫薄膜 58
第五章 結論與未來展望 60
參考資料 61
dc.language.isozh-TW
dc.subject回收氧化銦錫zh_TW
dc.subject氧化銦錫奈米墨水zh_TW
dc.subject透明導電薄膜zh_TW
dc.subject噴墨印刷zh_TW
dc.subject透明導電線路zh_TW
dc.subject回收氧化銦錫zh_TW
dc.subject氧化銦錫奈米墨水zh_TW
dc.subject透明導電薄膜zh_TW
dc.subject噴墨印刷zh_TW
dc.subject透明導電線路zh_TW
dc.subjectRecycled ITOen
dc.subjectRecycled ITOen
dc.subjecttransparent conductive patternen
dc.subjectinkjet printingen
dc.subjecttransparent conductive filmen
dc.subjectITO nanoparticle inken
dc.subjectITO nanoparticle inken
dc.subjecttransparent conductive patternen
dc.subjectinkjet printingen
dc.subjecttransparent conductive filmen
dc.title氧化銦錫透明導電薄膜之製備及燒結特性研究zh_TW
dc.titlePreparation and Sintering Characteristics of Indium Tin Oxide Transparent Thin Film Patternsen
dc.typeThesis
dc.date.schoolyear108-2
dc.description.degree碩士
dc.contributor.oralexamcommittee陳志恆(Jyh-Herng Chen),陳奕君(I-Chun Cheng),許景翔(Ching-Hsiang Hsu)
dc.subject.keyword回收氧化銦錫,氧化銦錫奈米墨水,透明導電薄膜,噴墨印刷,透明導電線路,zh_TW
dc.subject.keywordRecycled ITO,ITO nanoparticle ink,transparent conductive film,inkjet printing,transparent conductive pattern,en
dc.relation.page68
dc.identifier.doi10.6342/NTU202002275
dc.rights.note有償授權
dc.date.accepted2020-08-05
dc.contributor.author-college工學院zh_TW
dc.contributor.author-dept化學工程學研究所zh_TW
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