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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/54052完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
| dc.contributor.author | Yen-Pu Chen | en |
| dc.contributor.author | 陳彥蒲 | zh_TW |
| dc.date.accessioned | 2021-06-16T02:38:05Z | - |
| dc.date.available | 2018-07-29 | |
| dc.date.copyright | 2015-07-29 | |
| dc.date.issued | 2015 | |
| dc.date.submitted | 2015-07-24 | |
| dc.identifier.citation | [1] S. J. Pearton, GaN and Related MaterialⅡ, CRC Press, 1997.
[2] H. Morkoç, Nitride Semiconductors and Devices, Springer, 1999. [3] V. C. Su, P. H. Chen, M. L. Lee, Y. H. You, C. J. Hsieh, C. H. Kuan, Y. C. Chen, H. C. Lin, H. B. Yang, R. M. Lin, Q. Y. Lee, and F. C. Chu, “Investigation of nano-sized hole/post patterned sapphire substrates-induced strain-related quantum-confined stark effect of InGaN-based light-emitting diodes,” in CLEO: 2013, OSA Technical Digest (online), paper JW2A.84. [4] P. H. Chen, V. C. Su, Y. H. You, M. L. Lee, C. J. Hsieh, C. H. Kuan, H. M. Chen, H. B. Yang, H. C. Lin, R. M. Lin, F. C. Chu, and G. Y. Su, “The analysis of nano-patterned sapphire substrates-induced compressive strain to enhance quantum-confined stark effect of InGaN-based light-emitting diodes,” in CLEO: 2013, OSA Technical Digest (online), paper CM4F.8. [5] M. L. Lee, Y. H. You, R. M. Lin, C. J. Hsieh, V. C. Su, P. H. Chen, and C. H. Kuan, “Utilizing two dimensional photonic crystals to study the relation between the air duty cycle and the light extraction efficiency of InGaN-based Light-Emitting Diodes,” in IEEE Nanotechnology Conference, pp. 254-257, 2013. [6] S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures,” Jpn. J. Appl. Phys., vol. 34, pp. L797–L799, Jul. 1995. [7] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, “Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films,” Appl. Phys. Lett., vol. 68, pp. 643-645, 1996. [8] Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors”, Physica, vol. 34, pp. 149-154, 1967. [9] Y. H. You, V. C. Su, T. E. Ho, B. W. Lin, M. L. Lee, A. Das, W. C. Hsu, C. H. Kuan, and R. M. Lin, “Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs” Nanoscale Res. Lett., vol. 9, no. 1, pp. 1-8, 2014. [10] V. C. Su, P. H. Chen, R. M. Lin, M. L. Lee, Y. H. You, C. I. Ho, Y. C. Chen, W. F. Chen, and C. H. Kuan, “Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates,” Optics Express, vol. 21, pp. 30065-30073, 2013. [11] J. J. Chen, Y. K. Su, C. L. Lin, S. M. Chen, W. L. Li, C.C. Kao, 'Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates,' Photo. Tech. Lett., IEEE , vol. 20, no. 13, pp. 1193-1195, Jul. 2008. [12] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, G. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electronics, vol. 52, no. 6, pp. 962-967, Jun. 2008. [13] R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, D. S. Wuu, ”Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” Journal of crystal growth, vol. 298, pp. 219-222, Jan. 2007. [14] H. Y. Shin, S. K. Kwon, Y. I. Chang, M. J. Cho, K. H. Park, ”Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate,” Journal of Crystal Growth, vol. 311, pp. 4167–4170, Aug. 2009. [15] Z. H. Feng, Y. D. Qi, Z. D. Lu, and K. M. Lau, ”GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy,” Journal of Crystal Growth, vol. 272, pp.327–332, Dec. 2004. [16] A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, R. C. Gonzalez, R. E. Woods, “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak,” Appl. Phys. Lett., vol. 85, no. 22, pp. 5143, Dec. 2004. [17] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, pp. 3222-3233, Mar. 1999. [18] O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann,“Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 87, no. 1, pp. 334-344, Jan. 2000. [19] D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and H. Yang, “Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire,” Appl. Phys. Lett., vol. 83, no. 4, pp. 677-679, 2003. [20] C. C. Wang, H. Ku, C. C. Liu, K. K. Chong, C. I. Hung, Y. H. Wang, and M. P. Houng, “Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure,” Appl. Phys. Lett., vol. 91, pp. 121109, Sep. 2007. [21] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, “Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale,” J. Appl. Phys., vol. 103, no. 1, pp. 014314, Jan. 2008. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/54052 | - |
| dc.description.abstract | 在發光二極體(Light-Emitting Diodes, LEDs)中使用圖案化藍寶石基板(Patterned Sapphire Substrates, PSSs)可以減少穿隧差排密度(Threading Dislocation Density)以增加磊晶品質，以及增加光萃取率(Light Extraction Efficiency, LEE)。和業界量產型圖案化藍寶石基板主要追求光萃取率不同，我們製作的基板上微結構的高度只有其三分之一，但是我們發現隨著改變微結構不同的頂部c-plane大小和不同濕蝕刻所形成的微結構深度，成長於其上的氮化鎵晶體將受到不同的應力，且此應力會影響到發光二極體結構中的多重量子井(Multiple Quantum Wells, MQWs)中的量子侷限史塔克效應(Quantum-Confined Stark Effect, QCSE)，藉此增加載子複合效率。
在最後封裝完成的階段，論文會探討如何經由調變其微結構之幾何形狀來達到減少量子侷限史塔克效應，以及驗證效率衰退(Efficiency Droop)和量子侷限史塔克效應的關係。最後，在同樣長晶參數下，和成長於乾蝕刻之量產型圖案化藍寶石基板的元件(Conventional PSSs, CPSSs)亮度作比較，可以達到其95%的輸出瓦數，表示減低量子侷限史塔克效應很有效的提升了元件的性能。 | zh_TW |
| dc.description.abstract | GaN-based light-emitting diodes (LEDs) are typically grown on c-plane sapphire, or even patterned sapphire substrates (PSSs). In the same growth condition, we adopt wet etching to fabricate our PSSs with structure depth about 0.5µm instead of dry etching with depth up to 1.6µm. However, we find that the quantum-confined Stark effect (QCSE) can be reduced by changing the geometry of PSSs. Moreover, we have found a probable key parameter which dominates the QCSE magnitude, so that we can predict a probable range to further minimize the QCSE.
In the device level, we demonstrate that by reducing QCSE, the optical performance of LED devices such as internal quantum efficiency (IQE) and external quantum efficiency (EQE) can be enhanced, but efficiency droop is larger. After our analysis through the differential of EQE, the efficiency droop should be attributed to the consequence of increasing IQE. In the end, in comparison to the LED devices grown on conventional PSSs, our light output power (LOP) and EQE can reach up to 95% of the conventional one. Therefore, the reduction of QCSE is effective to enhance the performance of LEDs, and it’s potential to be an alternative to fabricate LEDs without changing the crystal growth conditions. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T02:38:05Z (GMT). No. of bitstreams: 1 ntu-104-R02943053-1.pdf: 4533078 bytes, checksum: f598f4d45054f4d66fdbecccf12637c3 (MD5) Previous issue date: 2015 | en |
| dc.description.tableofcontents | 口試委員會審定書 i
中文摘要 ii ABSTRACT iii 目錄 iv 圖目錄 vii 表目錄 ix 第1章、 緒論 1 1.1 前言 1 1.2 動機 2 1.3 論文架構 4 第2章、 理論基礎與材料分析 5 2.1 藍寶石基板簡介 5 2.2 氮化鎵類磊晶層簡介 8 2.2.1 氮化鎵晶體結構 8 2.2.2 應力對氮化鎵的影響 9 2.2.3 拉曼光譜(Raman Spectrum)的量測原理 12 2.2.4 拉曼光譜選擇律(Selection Rule) 13 2.2.5 氮化鎵之極化效應 14 2.2.6 量子井極化效應 16 2.2.7 量子侷限史塔克效應(Quantum-Confined Stark Effect) 17 2.2.8 屏蔽效應(Screening Effect) 17 2.3 藍寶石基板蝕刻原理 18 2.3.1 蝕刻種類 18 2.3.2 濕式蝕刻原理 19 2.4 光萃取效率模擬 21 第3章、 實驗儀器與樣品製備 22 3.1 實驗儀器簡介 22 3.1.1 微影技術與電子束微影系統(E-Beam Lithography) 22 3.1.2 電子槍蒸鍍系統(E-Gun) 24 3.1.3 感應式耦合電漿蝕刻(ICP-RIE) 25 3.1.4 掃描式電子顯微鏡(SEM) 25 3.1.5 有機金屬化學氣相沉積(MOCVD) 27 3.1.6 微光致激發螢光光譜量測系統(µ-PL) 28 3.1.7 微拉曼光譜量測系統(µ-Raman) 29 3.1.8 電致激發螢光光譜(EL)和積分球(IS)量測 31 3.2 樣品製備 31 第4章、 實驗結果與分析 37 4.1 實驗設計 37 4.1.1 濕式蝕刻基板設計 37 4.1.2 濕式蝕刻樣品製備 38 4.2 量測分析(第一部份)：TCP ratio的變化影響 39 4.2.1 拉曼量測分析與比較 39 4.2.2 光致激發螢光(PL)光譜量測分析與比較 39 4.2.3 電致激發螢光(EL)光譜分析與比較 41 4.2.4 討論與小結 42 4.3 量測分析(第二部分)：深度、TCP ratio的綜合影響 42 4.3.1 電致激發螢光(EL)光譜分析與比較 43 4.4 量測分析(第三部份)：相同LEE下減少QCSE的效果 46 4.4.1 電致激發螢光(EL)光譜分析與比較 46 4.4.2 小結 48 4.5 討論和成果 48 4.5.1 討論：QCSE和效率衰退的關係 48 4.5.2 成果：和業界量產型基板的比較 50 第5章、 結論 52 參考資料 53 | |
| dc.language.iso | zh-TW | |
| dc.subject | 濕式蝕刻 | zh_TW |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 圖案化藍寶石基板 | zh_TW |
| dc.subject | 電子束微影 | zh_TW |
| dc.subject | 量子侷限史塔克效應 | zh_TW |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 圖案化藍寶石基板 | zh_TW |
| dc.subject | 濕式蝕刻 | zh_TW |
| dc.subject | 電子束微影 | zh_TW |
| dc.subject | 量子侷限史塔克效應 | zh_TW |
| dc.subject | Electron-Beam Lithography | en |
| dc.subject | Quantum-Confined Stark Effect | en |
| dc.subject | GaN | en |
| dc.subject | Patterned Sapphire Substrate | en |
| dc.subject | Wet-Etching | en |
| dc.subject | Light-Emitting Diode | en |
| dc.subject | Quantum-Confined Stark Effect | en |
| dc.subject | Light-Emitting Diode | en |
| dc.subject | GaN | en |
| dc.subject | Patterned Sapphire Substrate | en |
| dc.subject | Wet-Etching | en |
| dc.subject | Electron-Beam Lithography | en |
| dc.title | 利用基板微結構調控氮化鎵類發光二極體之量子侷限史塔克效應 | zh_TW |
| dc.title | Manipulation of Quantum Confined Stark Effect in GaN-Based Light-Emitting Diode by Microstructure on Substrate | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 徐大正(Ta-Cheng Hsu),孫允武(Yuen-Wuu Suen),林瑞明(Ray-Ming Lin) | |
| dc.subject.keyword | 發光二極體,氮化鎵,圖案化藍寶石基板,濕式蝕刻,電子束微影,量子侷限史塔克效應, | zh_TW |
| dc.subject.keyword | Light-Emitting Diode,GaN,Patterned Sapphire Substrate,Wet-Etching,Electron-Beam Lithography,Quantum-Confined Stark Effect, | en |
| dc.relation.page | 56 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2015-07-24 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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