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DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Zheng-Hung Hung | en |
dc.contributor.author | 洪振紘 | zh_TW |
dc.date.accessioned | 2021-06-16T02:34:02Z | - |
dc.date.available | 2020-08-26 | |
dc.date.copyright | 2015-08-26 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-07-28 | |
dc.identifier.citation | [1] S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High-Brightness InGaN Blue , Green and Yellow Light-Emitting Diodes with Quantum Well Structures “,Jpn. J. Appl. Phys. 34, L797(1995).
[2] Amano, Hiroshi, et al. 'Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate.' Thin Solid Films 163 (1988): 415-420. [3] Watanabe, A., et al. 'The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer.' Journal of crystal growth 128.1 (1993): 391-396. [4] Dadgar, A., et al. 'MOVPE growth of GaN on Si (111) substrates.' Journal of Crystal Growth 248 (2003): 556-562. [5] Waltereit, P., et al. 'Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6Her.'rate.' it Applied physics letters 74.24 (1999): 3660-3662. [6] Ning, X. J., et al. 'Growth defects in GaN films on sapphire: The probable origin of threading dislocations.' Journal of materials research 11.03 (1996): 580-592. [7] Kozawa, T., et al. 'Thermal stress in GaN epitaxial layers grown on sapphire substrates.' Journal of applied physics 77.9 (1995): 4389-4392. [8] Liu, Zhiqiang, et al. 'Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate.' Applied Physics Letters, 99.9 (2011): 091104. [9] Yusuke Yoshizumi*, et al. “Advantages of Employing the Freestanding GaN Substrates with Low Dislocation Density for White Light-Emitting Diodes” SEI TECHNICAL REVIEW, ELECTRONICS, October 2012 No.75. [10] Piprek, Joachim. 'Efficiency droop in nitride‐based light‐emitting diodes.'physica status solidi (a) 207.10 (2010): 2217-2225. [11] Heying, B., et al. 'Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films.' Applied Physics Letters 68.5 (1996): 643-645. pp.643 [12] Takeuchi, Tetsuya, et al. 'Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells.' Japanese Journal of Applied Physics36.4A (1997): L382. [13] Morkoc, Hadis. Nitride semiconductors and devices. Vol. 32. Springer Science & Business Media, 2013. [14] Chen, Jian-Jhong, et al. 'Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates.' Photonics Technology Letters, IEEE 20.13 (2008): 1193-1195. [15] Gao, Haiyong, et al. 'Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching.' Solid-State Electronics 52.6 (2008): 962-967. [16] Shin, Hui-Youn, et al. 'Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate.' Journal of Crystal Growth 311.17 (2009): 4167-4170. [17] Feng, Z. H., et al. 'GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy.'Journal of crystal growth 272.1 (2004): 327-332. [18] Chakraborty, Arpan, et al. 'Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak.' Applied physics letters 85 (2004): 5143. [19] Ambacher, O., et al. 'Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures.' Journal of Applied Physics 85.6 (1999): 3222. [20] Ambacher, O., et al. 'Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures.' Journal of applied physics 87.1 (2000): 334-344. [21] Zhuang, D., and J. H. Edgar. 'Wet etching of GaN, AlN, and SiC: a review.'Materials Science and Engineering: R: Reports 48.1 (2005): 1-46. [22] Collazo, R., et al. 'Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers.' Journal of crystal growth 287.2 (2006): 586-590. [23] Mishra, Umesh K., Primit Parikh, and Yi-Feng Wu. 'AlGaN/GaN HEMTs-an overview of device operation and applications.' PROCEEDINGS-IEEE 90.6 (2002): 1022-1031. [24] Mathis, S. K., et al. 'Modeling of threading dislocation reduction in growing GaN layers.' Journal of Crystal Growth 231.3 (2001): 371-390. [25] Hino, T., et al. 'Characterization of threading dislocations in GaN epitaxial layers.' Applied Physics Letters 76.23 (2000): 3421-3423. [26] Lu, L., et al. 'Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition.' Journal of Applied Physics104.12 (2008): 123525. [27] Kapolnek, D., et al. 'Anisotropic epitaxial lateral growth in GaN selective area epitaxy.' Applied physics letters 71.9 (1997): 1204-1206. [28] Zhang, Wei, et al. 'Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN.' Journal of Applied Physics 113.14 (2013): 144908. [29] Kamimura, Jumpei, Katsumi Kishino, and Akihiko Kikuchi. 'Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy.' Applied Physics Letters 97.14 (2010): 141913. [30] Nam, Ok-Hyun, et al. 'Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy.' Applied physics letters 71.18 (1997): 2638-2640. [31] Zhang, Wei, et al. 'Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN.' Journal of Applied Physics 113.14 (2013): 144908. [32] Sakai, Akira, Haruo Sunakawa, and Akira Usui. 'Defect structure in selectively grown GaN films with low threading dislocation density.' Applied Physics Letters 71 (1997): 2259-2261. [33] Hangleiter, A., et al. 'Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency.' Physical review letters 95.12 (2005): 127402. [34] Bernardini, Fabio, Vincenzo Fiorentini, and David Vanderbilt. 'Spontaneous polarization and piezoelectric constants of III-V nitrides.' Physical Review B56.16 (1997): R10024. [35] Vampola, Kenneth J., et al. 'Measurement of electron overflow in 450 nm InGaN light-emitting diode structures.' Applied Physics Letters 94.6 (2009): 061116. [36] Kim, Min-Ho, et al. 'Origin of efficiency droop in GaN-based light-emitting diodes.' Applied Physics Letters 91.18 (2007): 183507. [37] Hader, J., J. V. Moloney, and S. W. Koch. 'Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes.' SPIE OPTO. International Society for Optics and Photonics, 2011. [38] Kim, Jaekyun, et al. 'Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells.' Optics express 22.103 (2014): A857-A866. [39] Wang, Chien-Chun, et al. 'Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure.' Applied Physics Letters 91.12 (2007): 121109. [40] Gao, Haiyong, et al. 'Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro-and nanoscale.' Journal of Applied Physics 103.1 (2008): 014314. [41] Lee, Tsung-Xian, et al. 'Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate.' Optics Express 15.11 (2007): 6670-6676. [42] Davydov, V. Yu, et al. 'Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC.' Journal of applied physics 82.10 (1997): 5097-5102. [43] Kim, Y. H., et al. 'Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study.' Journal of Applied Physics 107.6 (2010): 063501. [44] Efremov, A. A., et al. 'Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs.'Semiconductors 40.5 (2006): 605-610. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/53938 | - |
dc.description.abstract | 成長在藍寶石基板上的氮化鎵類發光二極體,因磊晶層與藍寶石基板間的晶格常數不匹配以及熱膨脹係數的差異,使得元件產生大量穿隧差排;若通過改變基板表面形貌,在基板上製作奈米結構,將可抑制磊晶層差排的產生。為探究基板形貌與磊晶之交互關係,本篇論文將藉由製作奈米圖案化藍寶石基板,改變方陣型結構週期與大小,探討對氮化鎵類磊晶體薄膜的影響。吾人使用電子束微影系統搭配乾式蝕刻技術,製作出一系列不同週期、結構大小,但相同深度的奈米結構於藍寶石基板上,並使用有機金屬化學氣相沉積系統進行氮化鎵類材料磊晶。其後,將使用非破壞性的光學顯微鏡、光致螢光量測系統、拉曼光譜系統等分析磊晶變化以及觀察缺陷密度,據斯提出氮化鎵成長模型。本研究發現到結構間距小於600nm時會出現磊晶方式的轉變,可同時降低穿隧差排密度與薄膜應力,相似於free-standing GaN材料。接著將上述觀測結果應用在發光二極體上並以電致發光檢測元件發光效率,同時探討效率衰減之原因並指出應該為穿隧差排。 | zh_TW |
dc.description.abstract | GaN-based Light-Emitting Diodes (LEDs) are typically grown on c-plane sapphire substrates. Due to the large lattice mismatch between GaN and the substrate, GaN on sapphire exhibits lots of threading dislocations (TDs), and as to control them, one can change the surface morphology of substrate, i.e. patterned sapphire substrates (PSSs). For further understanding on GaN epitaxy on nano-scaled PSSs, we fabricated a series of square-array PSSs in this research, providing various period and structure size but the same in depth. We exploited E-beam lithography system accompanied with dry etching method for precise pattern design. After that, GaN-based LED structure was developed on the fabricated PSSs via MOCVD system. A non-destructive analysis over epitaxial revolution was conducted with optical microscopy, micro-PL, and micro-Raman system, whereas a GaN epitaxial model was then proposed. In this research we observed that the epitaxial alteration was associated with spacing between structures, especially below 600nm, and can produce free-standing-like GaN, which is characterized with low defect density and strain simultaneously. For application, devices are capsulated and under electroluminescence (EL) measurement. And from it, a detailed research on device performance containing efficiency droop was discussed. We identified TDs as the main cause. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T02:34:02Z (GMT). No. of bitstreams: 1 ntu-104-R02941052-1.pdf: 4203757 bytes, checksum: 4be1a3a191bf9337785bb3652aabe921 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 口試委員會審定書 I
致謝 II 中文摘要 III Abstract IV 目錄 V 圖目錄 VII 表目錄 VIII 一、 導論 1 1.1 前言 1 1.2 動機 3 1.3 論文架構 6 二、 理論基礎與材料分析 7 2.1 藍寶石基板簡介 7 2.2 氮化鎵薄膜簡介 10 2.2.1 晶體結構 10 2.2.2 應力 12 2.2.3 錯位差排 13 2.2.4 晶體成長 16 2.3 氮化鎵類發光二極體 18 2.3.1 V字形凹孔(V-pit)與區域位能障礙 18 2.3.2 極化 19 2.3.3 氮化鎵類發光二極體之效率衰減(Efficiency Droop) 22 2.4 蝕刻原理 24 2.4.1 蝕刻種類 24 2.4.2 乾式蝕刻原理 25 2.5 光萃取率(LEE) 30 2.5.1 模擬軟體介紹 30 2.5.2 模擬參數設定 31 三、 實驗儀器與樣品製備 32 3.1 實驗儀器 32 3.1.1 電子束微影系統 32 3.1.2 電子槍蒸鍍系統 34 3.1.3 感應式耦和電漿蝕刻 (ICP-RIE) 35 3.1.4 掃描式電子顯微鏡 36 3.1.5 有機金屬化學氣相沉積 38 3.1.6 光學系統─光致激發螢光量測系統與拉曼光譜量測系統 39 3.2 樣品製備 47 四、 實驗結果與分析 52 4.1 實驗結果 52 4.1.1 前導──商業化c-plane圖案化藍寶石基板長晶測試 52 4.1.2 前導實驗──結語 53 4.1.3 樣品製備 54 4.2 量測分析-LED磊晶層 56 4.2.1 樣品-拉曼強度 比較與分析 56 4.2.2 樣品-內部應力 比較與分析 60 4.2.3 樣品-主動層缺陷密度 比較與分析 61 4.2.4 歸納-晶體成長模型 64 4.3 量測分析-LED發光元件 67 4.3.1 樣品篩選 67 4.3.2 元件操作-I-V/L-I曲線 68 4.3.3 光萃取率(LEE)與發光功率比較 69 4.3.4 效率衰減(Efficiency Droop)比較與成因探討 70 4.3.5 內部量子效率(IQE) 71 五、 結論 72 六、 參考文獻 73 | |
dc.language.iso | zh-TW | |
dc.title | 優化基板奈米結構間距改善磊晶品質與氮化鎵類發光二極體效率衰減 | zh_TW |
dc.title | Improve Epitaxy and Efficiency Droop of GaN-based LEDs on Nano-Patterned Substrates with Spacing Optimization | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 徐大正,林瑞明,孫允武,孫建文 | |
dc.subject.keyword | 氮化鎵類發光二極體,奈米圖案化藍寶石基板,磊晶成長模型,電子束微影,效率衰減, | zh_TW |
dc.subject.keyword | GaN-based Light-emitting diodes,Nano-Pattered Sapphire Substrates,Epitaxial Model,Electron-beam Lithography,Efficiency Droop, | en |
dc.relation.page | 75 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-07-28 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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