雙極電／磁場混合非揮發性記憶體

Abstract

此研究提出一種可應用於通訊的磁控電晶體，是一種結合了可變電阻式記憶體(ITO/PMMA/Ag)和具有金字塔結構的磁電薄膜元件(Fe-Ni/PDMS/AgNWs)的垂直整合結構。這兩種元件分別感應電場和磁場來結合形成電晶體。此器件可以做為開關使用，並且可以藉由不同的電場和磁場來調控輸出的訊號。另外，我們將磁電薄膜中的鐵鎳材料替換為一樣具有磁性的二氧化鉻(CrO2)，利用二氧化鉻遇熱會消磁的特性，使此元件多了一項熱感應。此研究中的電晶體具有一些優點，包含低成本、高開關電流比率、快速響應時間、非接觸式人機互動等等。這些特性使這項磁控電晶體有著發展通訊、監控系統和資訊安全的潛力。

We propose an electric/magnetic hybrid nonvolatile transistor memory that can be controlled by both external electric and magnetic fields. This transistor possesses a tandem structure composed of a resistive random-access memory (RRAM) of ITO/PMMA/Ag and a magnetoelectronic film with micropyramid structure of FeNi/PDMS/AgNWs. This novel device carries the properties of each individual component enable to sense electric and magnetic fields and form a unique hybrid transistor memory. It can function as a switch and nonvolatile memory, and can control the output signal by different electric and magnetic fields. In addition, we replaced the iron-nickel in the magnetoelectronic film with chromium dioxide (CrO2). Using the characteristic of CrO2 demagnetization when heated, makes this device produce an additional thermal induction and optically controllable capability. Furthermore, this transistor has several advantages, including cost effectiveness, high ON/OFF ratio, fast response time, and touchless human–machine interaction. All these characteristics enable the newly designed electric/magnetic hybrid nonvolatile transistor memory have a great potential to be applied in many areas, including communications, monitoring systems, information security, and etc.