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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.author | Sin-Yi Yin | en |
dc.contributor.author | 尹新逸 | zh_TW |
dc.date.accessioned | 2021-06-15T16:33:25Z | - |
dc.date.available | 2020-08-20 | |
dc.date.copyright | 2015-08-20 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-08-12 | |
dc.identifier.citation | [1] International Energy Agency, ”World Energy Outlook 2014”, http://www.worldenergyoutlook.org/.
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Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures” J.Appl. Phys, vol. 85, no. 6, Mar. 1999. [8] M. A. Khan, J. N. Kuznia, A. Bhattarai and D. T. Olson, “Metal Semiconductor Field Effect Transistor on single crystal GaN,” Appl. Phys. Lett, vol. 62, pp. 1786-1787, 1986. [9] W. B. Lanford , T. Tanaka , Y. Otoki and I. Adesida, 'Recessed-gate enhancement-mode GaN HEMT with high threshold voltage', Electron. Lett. vol. 41, no. 7, pp.449 -450 2005. [10] T. Oka and T. Nozawa, “AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications,” IEEE Electron Device Lett., vol. 29, no. 7, pp. 668–670, Jul. 2008. [11] Y. Cai, Y. Zhou, K. J. Chen, and K. M. Lau, “High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,” IEEE Electron Device Lett., vol. 26, no. 7, pp. 435–437, Jul. 2005. [12] Y. Cai, Y. Zhou, K. 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Ha, et al., '1.6KV, 2.9 mΩ cm2 Normally-off p-GaN HEMT Device', International Symposium on Power Semiconductor Devices and ICs, 2012. [17] L.-Y. Su, F. Lee, and J. J. Huang, “Enhancement-mode GaN-based highelectron mobility transistors on the Si substrate with a P-Type GaN cap layer,” IEEE Trans. Electron Devices, vol. 61, no. 2, pp. 460–465, Feb. 2014. [18] M. Kuroda, T. Ueda, and T. Tanaka, “Normally-off AlGaN/GaN MISHFETs using non-polar a-plane,” in Proc. Ext. Abstr. Solid State Devices Mater., 2007, pp. 148–149. [19] M. Ishida, M. Kuroda, T. Ueda, and T. Tanaka, “Nonpolar AlGaN/GaN HFETs with a normally off operation,” Semicond. Sci. Technol., vol. 27, no. 2, pp. 24019–24024, Jan. 2012. [20] S. Karmalkar, M. S. Shur, G. Simin, and A. Khan, “Field-plate engineering for heterostructure field effect transistors,” IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2534–2540, Dec. 2005. [21] E. Arslan, S.Bütün, and E. 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Chen, “Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors,” Japanese Journal of Applied Physics. vol. 50, no. 11, p. 110202, Oct. 2011. [26] D. W. Johnson, R. T. P. Lee, R. J. W. Hill et al., “Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in Au-free technology,” IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3197–3203, Oct. 2013. [27] Y. Z. Yue, Y. Hao, J. C. Zhang, J. Y. Ni, W. Mao, Q. Feng, and L. J. Liu, “AlGaN/GaN MOS-HEMT With HfO2 dielectric and interfacial passivation layer grown by atomic layer deposition,” IEEE Electron Device Lett., vol. 29, no. 8, pp. 838–840, Aug. 2008. [28] T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, “A study on current collapse in AlGaN/GaN HEMTs induced by bias stress,” IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2015–2020, Oct. 2003. [29] D. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52907 | - |
dc.description.abstract | 在這篇論文中我們先研究了閘極堀入製程以及在閘極區域氧化層的沉積對氮化鋁鎵/氮化鎵高電子遷移率電晶體在直流特性上的影響,閘極堀入製程和氧化層的沉積會造成電晶體的臨界電壓偏移,也同時會影響關閉狀態的電流與形成介面缺陷,因為磊晶晶圓的品質不佳所以在這章節中沒有深入研究,而是做為製程開發與討論。
為了降低功率損耗,研究主要的方向朝向常關式元件發展,我們使用氟離子為基礎的電漿處理電晶體的閘極區域在不同磊晶結構的晶圓上,製作出增強型高電子遷移率電晶體並與空乏型電晶體特性做比較,臨界電壓可從 -1.3 V 偏移至 0.45 V。 在進一步的為了提高閘極施加偏壓與降低閘極漏電流,我們在氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體的閘極區域成長10 奈米的氧化鋁作為氧化絕緣層,金屬後熱退火的製程也修復了由氟離子處理造成的表面損傷而使汲極電流密度有 1.5 倍的提升,在電容量測以及不同閘極操作偏壓下分析研究了介面缺陷造成臨界電壓偏移的機制,電流崩陷的現象也經由閘極脈衝的量測下觀察到。 | zh_TW |
dc.description.abstract | In this thesis, we investigated the effect of gate recess process and oxide layer deposition on DC characteristics of AlGaN/GaN HEMT first. Threshold voltage of AlGaN/GaN HEMTs can be shifted by gate recess process and oxide layer deposition. Gate recess process and oxide layer deposition also affect off state current and surface traps effect. Only for process development and didn’t do further research in this chapter because of poor wafer quality.
In order to reduce the loss of switch, the development of normally off GaN FETs is the major direction of research. We using fluoride-based plasma treatment on different epitaxy structures to fabricate enhancement mode HEMTs show a performance compare with the depletion mode HEMTs. Threshold voltage of AlGaN/GaN HEMTs can be shifted from -1.3 V to 0.45 V. We deposited 10 nm Al2O3 as oxide layer of AlGaN/GaN MOSHEMTfor the higher gate voltage applicable and reduce gate leakage current. The damage caused by fluoride treatment can be recovered by post metallization anneal while shows drain current density 1.5 times improvement. We also investigated the engineering of interface traps cause threshold voltage shift under different gate bias operation and CV measurement. Current collapse phenomena are also observed by using gate lag pulse measurement. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T16:33:25Z (GMT). No. of bitstreams: 1 ntu-104-R02941078-1.pdf: 17102150 bytes, checksum: 8edb7b9bd7f04d614090ecc292744193 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 誌謝 ………………………………………….………………………………..I
摘要 ………………………………………..………………………………..III Abstract ……………………………………..…………………………………..IV 目錄 …………………………………………...……………………………..V 圖目錄 ………………………………………………………………………..VII 表目錄 …………………………………………..……………………………XII 第1章 緒論 1 1.1 背景介紹 1 1.2 氮化鎵材料特性介紹 3 1.3 研究動機與論文概述 7 第2章 氮化鋁鎵/氮化鎵高電子遷移率電晶體之製程開發與不同製程下之特性探討 12 2.1 光罩線寬與結構設計 12 2.2 閘極堀入式高電子遷移率電晶體之製作流程 14 2.2.1 電晶體磊晶結構與製程條件變化的介紹 14 2.2.2 不同結構之電晶體元件製作流程 17 2.3 不同製程下高電子遷移率電晶體之特性分析 22 2.3.1 電晶體閘極堀入蝕刻深度對電壓-電流特性之量測與分析 22 2.3.2 電晶體閘極成長氧化絕緣層對電壓-電流特性之量測與分析 27 2.3.3 電晶體之電容-電壓特性量測與分析 31 第3章 利用氟離子處理製作增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體與電特性分析 35 3.1 增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體之製作流程 35 3.1.1 磊晶晶圓之差異性與霍爾量測的材料特性 36 3.1.2 相同電晶體結構下不同製程方法之元件製作流程 38 3.2 增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體之電性分析 41 3.2.1 電晶體之電壓-電流量測與分析 41 3.2.2 電晶體接觸電阻與導通電阻之計算與分析 49 3.2.3 電晶體崩潰電壓分析與討論 52 第4章 不同氟離子處理時間之增強型氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之製作與電特性分析 56 4.1 增強型氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之製作流程 57 4.2 增強型氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之電特性分析 60 4.2.1 探討熱退火前後以及不同氟離子處理時間之電晶體電壓-電流量測與分析 60 4.2.2 閘極金屬後熱退火電晶體之導通電阻、接觸電阻與崩潰電壓分析 68 4.2.3 介面與氟離子造成之缺陷對電晶體之電性探討 73 第5章 結論與未來展望 81 參考文獻 …………………………………………………………………………83 | |
dc.language.iso | zh-TW | |
dc.title | 利用氟離子電漿處理之增強型氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體的製作與分析 | zh_TW |
dc.title | Fabrication and Analysis of Enhancement Mode AlGaN/GaN MOSHEMTs Using Fluoride-based Plasma Treatment | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林浩雄(Hao-Hsiung Lin),陳敏璋(Miin-Jang Chen),黃建璋(Jian-Jang Huang) | |
dc.subject.keyword | 閘極堀入,常關式元件,氟離子電漿處理, | zh_TW |
dc.subject.keyword | gate recess,normally off,fluoride plasma treatment, | en |
dc.relation.page | 86 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-08-13 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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