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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳永芳 | |
dc.contributor.author | Yixiang Wang | en |
dc.contributor.author | 王奕翔 | zh_TW |
dc.date.accessioned | 2021-06-15T16:19:10Z | - |
dc.date.available | 2025-08-17 | |
dc.date.copyright | 2015-08-28 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-08-17 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52577 | - |
dc.description.abstract | 在生物體內引入電子產品將會是未來人類科技進展的下一步。近年來生物材料引入半導體材料領域做了多方面研究。引入生物材料的優點為方便製作可生物降解(biodegradable)、生物吸收(bioresorbable),具備生物相容性(biocompatible)、環境友善性(environmentally friendly)的半導體元件。且由於生物材料無須化學製備,生物材料製作的元件多具有材料獲取容易、便宜等等優點。 本論文中,使用雞蛋白(albumen)作為主動層,嘗試使用全可食用性材料(edible)製作有機非揮發性電阻式記憶體(organic non-volatile resistive random-access memory),以期將來體內電子產品的相關應用能有所本。完成之元件經由改變電壓進行非揮發性電阻式記憶體操作,低電壓(小於3伏特)即可於元件內存入「0」與「1」的邏輯分別,經由百次的「存入」「抹除」後依然具有明顯可操作性,並且具有10的四次方秒以上的保存時間,足以證明其穩定性。 為驗證其原理,本研究嘗試多種不同的上電極以找出可能的運作原理,由於不同的電極會影響元件是否能夠寫入訊號,因此我們推測雞蛋白本身不是開關運作的關鍵角色。接著我們引入電極面積測試,由於ON電流與電極面積無明顯相關,我們推測元件的開關轉換特性是由電極而來。最後我們做了電壓電流數據分析,元件由ON狀態轉換到OFF狀態前的電流電壓線性關係亦能證明我們的推測。 | zh_TW |
dc.description.abstract | In the future, to put electronic products into human body will be the next step in the human science and technology progress. Biomaterials have been studied in many various aspect researches in recent years. The advantages to utilize biomaterials are that they are easy to fabricate devices which are biodegradable, biocompatible and environmentally friendly. And, most components consisting of biomaterials are cheap and easy to obtain. In this thesis, we use chicken egg white (albumen) as the active layer, and try to implement edible materials to fabricate non-volatile resistive random access memory (RRAM). Through changing the voltage across the top and bottom electrodes, the device can save the logic information “0” or “1” in low voltage (< 3V ). After one hundred cycles of “set” and “reset”, the device can still be operable, and the retention time is more than 104 seconds. To find out the operation mechanism, we have tried different top electrodes. Because different kinds of electrodes will influence the switching behavior of the devices. It is found that there is no significant dependence between current and electrode area. We speculate that the ON/OFF mechanism mainly arises from the characteristic of electrode. We also analyze the I-V curve of the devices, and find that the linear dependence between current and voltage also supports our assumption that the underlying mechanism is dominated by the formation of filaments due to the migration metallic atoms coming from electrodes. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T16:19:10Z (GMT). No. of bitstreams: 1 ntu-104-R01245013-1.pdf: 3259273 bytes, checksum: 0f91f4ab857fc5655f61f1595881b468 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | 口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES x Chapter 1 Introduction 1 1.1 Organization of this Thesis 1 1.2 Research Background and Motivation 1 1.3 Introduction of Non-volatile Memories 2 Chapter 2 The Principle of Non-volatile Memory 14 2.1 Switching mechanism in soft resistive-type memories 14 2.1.1 Filamentary conduction 14 2.1.2 Space charge and traps (SCLC) 16 2.1.3 Charge transfer (CT) 17 2.1.4 Conformational change 18 2.2 Carrier transportation 19 2.2.1 Ohmic conduction 21 2.2.2 Schottky emission (Thermionic emission) 22 2.2.3 Space charge limited current (SCLC) 24 2.2.4 Poole-Frenkel emission mechanism 25 2.2.5 Hopping or impurity conduction 26 2.2.6 Tunneling conduction 28 Chapter 3 Experiment and Sample Preparation 31 3.1 Equipment 31 3.1.1 Spin-coater 31 3.1.2 Thermal evaporation 32 3.1.3 α-step 32 3.1.4 AFM 34 3.1.5 Semiconductor I-V measurement system 35 3.2 Material design and sample fabrication 35 3.2.1 Chicken egg white (albumen) 35 3.2.2 Rice paper (wafer paper) 37 3.2.3 Gold electrode 37 3.3 Measurement methods 38 3.3.1 Operation of resistive-type memory 38 3.3.2 Basic reliability of nonvolatile memory 40 Chapter 4 Experimental Results and Discussion 43 4.1 Different metal electrodes fabricated albumen memory 43 4.1.1 The experimental data of albumen with different metal electrodes 44 4.1.2 The reliability test of Ag/Cu electrode albumen memory 47 4.1.3 Switching mechanism of Ag electrode albumen memory 50 4.2 The Au/Albumen/Au memory device 52 4.2.1 The influence of albumen layer thickness 53 4.2.2 Reliability of Au/Albumen/Au memory device 54 4.2.3 Discussion of conductive and switching mechanism of Au electrode albumen memory 56 4.3 An all edible and disposable materials-based resistive-type memory 61 Chapter 5 Conclusion 65 | |
dc.language.iso | en | |
dc.title | 可食用可拋棄非揮發性電阻式記憶體 | zh_TW |
dc.title | All Edible Materials-based Disposable Nonvolatile Resistive-type Memories | en |
dc.type | Thesis | |
dc.date.schoolyear | 103-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 許芳琪,林唯芳 | |
dc.subject.keyword | 電阻式記憶體,環境穩定性,可生物吸收,雞蛋白,可食, | zh_TW |
dc.subject.keyword | RRAM,environmentally friendly,albumen, | en |
dc.relation.page | 65 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-08-17 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 應用物理所 | zh_TW |
顯示於系所單位: | 應用物理研究所 |
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