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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52416完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任 | |
| dc.contributor.author | Xinhui Chen | en |
| dc.contributor.author | 陳欣卉 | zh_TW |
| dc.date.accessioned | 2021-06-15T16:14:13Z | - |
| dc.date.available | 2015-08-20 | |
| dc.date.copyright | 2015-08-20 | |
| dc.date.issued | 2015 | |
| dc.date.submitted | 2015-08-17 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52416 | - |
| dc.description.abstract | UVLEDs are in strong demands in recent years because of their special applications in industry and medicine. However, comparing with the commercial InGaN LEDs, the overall efficiency in UVLEDs is extremely low especially in UVC spectrum. The main reasons are found to be: (a) High defect densities in the AlGaN layer that result in low IQE; (b) The activation energy of Mg doped p-AlGaN layer is relatively high, which results in the poor hole injection and the increase of resistance; (c) Large absorption rate of the conventional p-GaN contact, which makes the light extraction efficiency much lower. To improve these issues, we focus on improving the current spreading and light extraction by considering different structures or different contact layers with Poisson and drift-diffusion solver to see how they influence the efficiency in UVLEDs. Moreover, we modeled a series of AlGaN superlattice structures to confirm that such a structure has a great potential of being used as the p-contact layer instead of p-GaN contact in UVLEDs. Finally, we discuss about the AlGaN UVB LEDs to find what the more important factor to limit their efficiency is. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T16:14:13Z (GMT). No. of bitstreams: 1 ntu-104-R02941104-1.pdf: 3080444 bytes, checksum: e7f4c070602354659b4cdf56c90944e9 (MD5) Previous issue date: 2015 | en |
| dc.description.tableofcontents | 口試委員會審定書. . . . . . . . . . . . . . . . . . . . . . . . . i
誌謝. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii 中文摘要. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv 英文摘要. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v 目錄. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii 圖目錄. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . x 表目錄. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xv 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 Properties of Nitride-based LED . . . . . . . . . . . . . 3 1.2 Challenge of UVLEDs and Motivation . . . . . . . . . 5 1.2.1 Insufficient Internal Quantum Efficiency . . . . 7 1.2.2 Current Crowding Effect . . . . . . . . . . . . . 9 1.2.3 Transparent p-contact Layer . . . . . . . . . . . 10 1.2.4 Brief Issues of UVB LEDs . . . . . . . . . . . . 13 2 Simulation Method . . . . . . . . . . . . . . . . . . . . . . . 14 2.1 Current Spreading Issue in UVLEDs . . . . . . . . . . 14 2.1.1 Method: 2D Poisson and Drift-Diffusion Solver 15 2.2 Modeling of LEE: 2D Monte Carlo Ray-tracing Solver . 17 2.3 Modeling of the SL Structure . . . . . . . . . . . . . . 19 2.3.1 1D Schr¨odinger Solver . . . . . . . . . . . . . . 21 2.3.2 Absorption Coefficient Calculation . . . . . . . 22 3 Study of the Current Spreading and Light Extraction of AlGaNbased 275nm UVLEDs . . . . . . . . . . . . . . . . . . . . . 24 3.1 Optimized Current Spreading Effect by Proper Spacing between 2 Fingers in the Lateral Structure . . . . . . . 25 3.2 Simulation of Graphene as the p-contact Layer . . . . . 29 3.3 Optimized Current Spreading Effect by proper Spacing between 2 Fingers in Vertical LED . . . . . . . . . . . 34 3.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . 37 4 Simulation of Using p-AlGaN SL Structure as the p-contact Layer in UVLEDs . . . . . . . . . . . . . . . . . . . . . . . . 39 4.1 Optical Properties of AlGaN SL Structures . . . . . . . 40 4.2 Propagation Properties of AlGaN SL Structures . . . . 41 4.3 Summary . . . . . . . . . . . . . . . . . . . . . . . . . 48 5 Simulation of AlInGaN UVB LEDs . . . . . . . . . . . . . . 49 5.1 Simulation Structure of 320 nm LED . . . . . . . . . . 49 5.2 I-V and IQE of 320 nm LED . . . . . . . . . . . . . . . 50 6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 | |
| dc.language.iso | en | |
| dc.subject | 氮化鋁鎵 | zh_TW |
| dc.subject | 出光效率 | zh_TW |
| dc.subject | 超晶格 | zh_TW |
| dc.subject | 紫外發光二極體 | zh_TW |
| dc.subject | 電流分佈 | zh_TW |
| dc.subject | Current spreading | en |
| dc.subject | Light extraction | en |
| dc.subject | Ultraviolet light-emitting-diode | en |
| dc.subject | Superlattice | en |
| dc.subject | AlGaN | en |
| dc.title | 探討電流聚集效應和出光對深紫外發光二極體效率影響之數值模擬與研究 | zh_TW |
| dc.title | Numerical study of the current spreading and light extraction in deep UV light emitting diode | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 楊志忠,黃建璋,陳奕君 | |
| dc.subject.keyword | 紫外發光二極體,氮化鋁鎵,電流分佈,出光效率,超晶格, | zh_TW |
| dc.subject.keyword | Ultraviolet light-emitting-diode,AlGaN,Current spreading,Light extraction,Superlattice, | en |
| dc.relation.page | 68 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2015-08-18 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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