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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張嘉升(Chia-Seng Chang) | |
dc.contributor.author | Wei-Chiao Lai | en |
dc.contributor.author | 賴韋僑 | zh_TW |
dc.date.accessioned | 2021-06-15T16:14:02Z | - |
dc.date.available | 2023-08-31 | |
dc.date.copyright | 2020-08-12 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-08-07 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52409 | - |
dc.description.abstract | 聚焦離子束系統廣泛的應用於奈米科學與先進半導體製程領域中,常見的離子源有三大類:感應耦合電漿離子源(ICP, inductively coupled plasma ion sources)、液態金屬離子源(LMIS’s, liquid metal ion sources)與氣體場離子源(GFIS’s, gas field ion sources)。然而,電漿態離子源之聚焦光斑尺寸為次微米級故無法提供高精準度加工。液態金屬離子源則會在操作時對樣品造成金屬殘留污染。而以氣體場離子源為光源的聚焦離子束系統聚焦點小於奈米尺度,亦不對樣品造成金屬污染。氣體場離子源發展於20世紀中,具備極小的能量分散(energy spread)。單原子針之針尖末端僅有一顆原子,由於單原子造成局部電場增益,使得整個針尖上僅有此單原子能發射氣體場離子。因此離子光源亮度極高,適合作為聚焦離子束系統相關應用。熱穩定態覆銥鎢單原子針具有優良抗化學腐蝕特性,已驗證適合發射多種氣體場離子(氦、氖、氬、氫與氧氣)。在本研究中使用覆銥鎢(111)單原子針發射高亮度與高穩定性氙氣體場離子源,量測由溫度150 K至309 K的場離子電流對電壓作圖,經由計算在氙氣分壓1 × 10-4 torr時,簡化亮度(reduced brightness)遠高於電漿態離子源與液態金屬離子源。為了提高氣體場離子源之離子電流,根據氣體場離子電流理論進行了模擬,了解到提升氣體場離子源的條件:大針尖曲率半徑、小針柄錐角以及對成像氣體預先降溫。而模擬也顯示當針尖軸向上有一小凸起結構時,該凸起結構越大則有效捕獲面積越小,此結果暗示了單原子針為能兼具大電流與高亮度的場離子電流發射極。分析實驗上不同發射極發射離子電流比例與理論計算預測比例數值相仿。最終實驗上得到當針座溫度29 K與氦氣分壓3.7 × 10-3 torr時,能發射氣體場離子電流2,000 pA的發射極。 | zh_TW |
dc.description.abstract | Focused ion beam (FIB) systems are widely used in nanoscience and advanced semiconductor manufacturing. Ion sources applied in conventional FIB systems can be divided into three main categories: inductively coupled plasma (ICP) ion sources, liquid metal ion sources (LMIS’s), and gas field ion sources (GFIS’s). Among these sources, an ICP ion source has a submicrometer spot size; therefore, a system with such a source cannot be used in high-precision milling. Moreover, an LMIS engenders metal contamination in the target sample during operation. By contrast, a GFIS has a subnanometer spot size and does not engender postoperative metal contamination. The first GFIS was developed in the mid-20th century and has a very small energy spread. The apex of a single-atom tip (SAT) has only one atom. Gas ions are field emitted from this atom because of the local field enhancement caused by the atom. Therefore, the brightness of an SAT-GFIS is extremely high, rendering it an appropriate ion source for FIB system applications. An Ir/W(111) SAT is thermally stable and thus chemically inert, which is advantageous for GFIS emission. The characteristics of several gas species (He, Ne, Ar, H2, and O2) emitted from Ir/W(111) SAT’s have been reported. This study presents a system with an Ir/W(111) SAT that can emit Xe+ ion beams with high brightness and high current stability. The Xe+ ion emission current was analyzed against the extraction voltage at temperatures ranging from 150 to 309 K in order to determine the optimal emitter temperature for maximum Xe+ ion emission. The optimal emitter temperature for maximum Xe+ ion emission was approximately 150 K; moreover, at a Xe gas pressure of 1.0 × 10−4 Torr, the reduced brightness observed for the presented system was considerably larger than that observed for an ICP ion source or LMIS. The simulations were performed based on the theory of gas field ion current. Several conditions were identified to boost the GFIS current: a larger radius of curvature, a smaller shank cone angle, and precooling image gas. Furthermore, if the emitter apex has a small protrusion, increasing the protrusion diameter can reduce the effective captured area. This implies that developments in SAT’s may enable both high-ion-current and high-brightness ion sources. The simulations could enable qualitative analyses of experimental data. The experimentally derived field ion current ratios for different emitter shapes were similar to the ratios calculated using the simulation. Finally, the experimental results revealed that the gas field ion current emitted from the Ir/W(111) tip at a tip holder temperature of 29 K and a He gas pressure of 3.7 × 10−3 Torr was 2,000 pA. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T16:14:02Z (GMT). No. of bitstreams: 1 U0001-0608202019475500.pdf: 18859634 bytes, checksum: d20921115c210ef64216425850e6aa5d (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | 口試委員會審定書 ……………………………………………………I 致謝 …………………………………………………………………II 中文摘要 ……………………………………………………………III Abstract ……………………………………………………………IV 目錄 …………………………………………………………………V 圖目錄………………………………………………………………VIII 表目錄………………………………………………………………XIV 第一章 緒論 .............................................................................. 1 1.1 研究氣體場離子源動機 ................................................................. 1 1.2 單原子針的發展簡介 .................................................................. 11 第二章 實驗原理與儀器 ................................................................... 20 2.1 場離子顯微鏡成像原理 ................................................................ 20 2.2 場離子顯微鏡相關儀器設備 ............................................................ 24 第三章 實驗結果與討論 ................................................................... 32 3.1 熱穩態單原子覆銥鎢針的長成觀察 ...................................................... 32 3.2 氙氣離子電流對電壓、溫度及時間特性變 ................................................ 33 3.3 氣體場效蝕刻單原子針與其原理 ........................................................ 43 3.4 混合氣體場離子源及其原理 ............................................................ 49 第四章 針形幾何參數對場離子電流影響與量測 ............................................... 52 4.1 發射極與成像氣體原子行為模式對電流之影響 ............................................ 52 4.2 CPO2D 模擬發射極表面電場分佈 ........................................................ 58 4.3 發射極表面電場分佈與對成像氣體捕獲面積之影響 ........................................ 60 4.4 氣體場離子電流理論探討典型發射極與單原子針 .......................................... 79 4.5 氣體場離子電流理論計算之結果對比實驗數據 ............................................ 86 第五章 結論與未來工作 ................................................................... 92 參考文獻 ................................................................................ 94 | |
dc.language.iso | zh-TW | |
dc.title | 單原子針氣體場離子源特性與其針形對離子發射效應模擬 | zh_TW |
dc.title | Characterization of Gas Field-Ion Source Emitted from Single-Atom Tip and Simulation of Tip Shape Effect on Ion Emission | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 博士 | |
dc.contributor.coadvisor | 黃英碩(Ing-Shouh Hwang) | |
dc.contributor.oralexamcommittee | 傅祖怡(Tsu-Yi Fu),劉鏞(Yung Liou),陳敏璋(Miin-Jang Chen),邱雅萍(Ya-Ping Chiu) | |
dc.subject.keyword | 氣體場離子源,氣體場離子電流,單原子針,室溫,針形, | zh_TW |
dc.subject.keyword | gas field ion source (GFIS),gas field ion current,single-atom tip (SAT),room-temperature (RT),tip shape, | en |
dc.relation.page | 97 | |
dc.identifier.doi | 10.6342/NTU202002576 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2020-08-10 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理學研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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