發展奈米線元件量子傳輸非平衡態數值模擬和應用

Abstract

這篇論文主要在討論使用非平衡態格林函數的方法來模擬量子傳輸的效應。近年來，電晶體製程已經被發展至二十奈米以下。因為沒有考慮到量子效應，傳統使用飄移擴散方程的模擬方法來模擬載子傳輸現象已經沒辦法準確的模擬載子在元件中的行為。因此，以量子為理論的載子傳輸模擬軟體需要被發展。因為奈米線在極小元件中能有效的抑制短通道效應，因此我們的程式特定為解奈米線類型的結構。這個研究主要的特點在於我們成功地引入了聲子和材料表面粗糙所引起的散射現象，並計算因此發生載子從高能階躍遷至低能階和被散射到不同能態的結果。

This thesis studies the quantum transport mechanism by developing a quantum transport program using NEGF method. In recent years, transistors have been scaling down below 20 nm. The traditional carrier transport program which using drift-diffusion model can no longer accurately describe the transport phenomenon because it ignores the quantum wave pictures. As a result, a program studying carrier transport based on the quantum field theory is required. In our program, we specify the nanowire structure which is a promising solution to suppress short channel effects in small scale device. The key feature is that we successfully include optical phonon, acoustic phonon, surface roughness scattering in the NEGF solver which can simulate the energy relaxation in different energies and the transition rate to the different states in the nanowire.