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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 鄭如忠(Ru-Jong Jeng) | |
| dc.contributor.author | Yu-Yi Hsu | en |
| dc.contributor.author | 許有毅 | zh_TW |
| dc.date.accessioned | 2021-06-15T13:28:19Z | - |
| dc.date.available | 2016-03-08 | |
| dc.date.copyright | 2016-03-08 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-02-13 | |
| dc.identifier.citation | 1. Tsumura, A.; Koezuka, H.; Ando, T., Macromolecular electronic device: Field‐effect transistor with a polythiophene thin film. Applied Physics Letters 1986, 49, 1210-1212.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51241 | - |
| dc.description.abstract | 在本研究中，一系列富含Urea/malonamide Linkage的規則樹枝狀高分子應用在有機場效薄膜電晶體 (OTFTs) 之介電層。此一系列的分子量及分枝程度由小而大 (從低到高分別為：G0.5, G1, G1.5, G2和G2.5)，其末端具有不同分枝程度的成對碳十八長碳鏈。此外，利用合成的方式製備以Tetracarboxylic Diimides為核心的衍生物例如NDI-C4F7, NDI-C7F9, PDI-C4F7 和 PDI-C7F9作為OTFTs的半導體層。由於以NDI或PDI為核心化合物在大氣中擁有良好的穩定性。所有的N型通道之OTFTs元件，可在大氣下製備並量測 (經由旋轉塗佈方式)。這類以G1.5介電層修飾OTFTs元件之載子遷移率(Mobility) 相對於標準Octadecyltrichlorosilane (ODTS) 修飾之元件可提升10到100倍左右。特別是當PDI-C4F¬7作為有機半導體蒸鍍在G1.5修飾之絕緣層上時，表現出最佳的N型OTFTs性質， mobility以及開關電流比 (On/off Currnet Ratio) 分別達到約為3.8 cm2V-1s-1以及7 x 103。此外，研究中利用AFM偵測半導體層的表面形貌，以及GIWAXS觀察半導體小分子在不同介電層改質之基板上的排列及堆積密度，此外接觸角、介電常數、熱性質等分析也在此研究中被進行探討。 | zh_TW |
| dc.description.abstract | A series of urea/malonamide dendritic molecules were prepared as gate dielectric insulator for organic thin film transistors (OTFTs). The series of molecules possess various numbers of peripheral stearyl groups with the different degrees of branching (from low to high: G0.5, G1, G1.5, G2 and G2.5). In addition, several tetracarboxylic diimides derivatives such as NDI-C4F7, NDI-C7F9, PDI-C4F7 and PDI-C7F9 with fluorinated alkyl end groups were used as semiconducting layers of OTFT due to the good stability in air. Numbers of n-channel OTFTs were fabricated by spinning the dendritic gate insulators on Si/SiO2 substrates, and then depositing the semiconducting layers in vacuum. This type of OTFTs with G1.5 as gate dielectric insulator showed the enhancement of electron mobility about 1-2 order than the device modified by octadecyltrichlorosilane (ODTS) . In particular, the device with G1.5 as insulator and PDI-C4F7 as semiconductor exhibited the best n-channel properties. The electron mobility and on/off ratio measured in the air were 3.80 cm2V-1s-1 and 7.7 x 103, respectively. Vth shift (Vide infra) The investigation of the influence on semiconducting layers was performed by atomic force microscopy (AFM) and Grazing incidence wide-angle X-ray scattering (GIWAXS). In fact, the film quality of gate insulators is dependent on the thermal properties, surface energies and generation of dendrons. Better film quality would favor the ordered arrangement of semiconducting molecules, hence the properties of gate insulator such as contact angle, dielectric constant and thermal stabilities were also studied in this work. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T13:28:19Z (GMT). No. of bitstreams: 1 ntu-105-R02549043-1.pdf: 5026192 bytes, checksum: 6a33965e71e54dda1f5b063540a03f5a (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 中文摘要 i
Abstract ii 目錄 iii 圖目錄 vi 表目錄 viii 第一章 緒論 1 1.1 前言 1 1.2 有機薄膜電晶體之簡介 2 1.3 有機薄膜電晶體之重要參數 7 1.3.1 載子遷移率(Charge Carrier Mobility, μ) 7 1.3.2 起始電壓(Threshold Voltage, VTH) 7 1.3.3 開關電流比(On/off Current Ratio, Ion/Ioff) 7 1.4 有機薄膜電晶體之材料 8 1.4.1 有機半導體材料 8 表1.1 P型材料之載子遷移率與開關電流比 10 表1.2 N型材料之載子遷移率與開關電流比 13 表1.3雙極性材料之載子遷移率與開關電流比 15 1.4.2 介電層材料 15 表1.4 無機介電層材料及其介電常數 16 表1.5 有機高分子介電材料及其介電常數 16 1.4.3 塑膠電晶體基板 17 第二章 文獻回顧與研究動機 18 2.1 廣泛研究之 18 2.1.1 NDI與PDI於有機薄膜電晶體之應用 18 2.1.2 不同側鏈NDI與PDI對有機薄膜電晶體之影響 19 2.1.3 Urea/malonamide規則樹枝狀高分子介紹 21 2.1研究動機 21 第三章 實驗與合成 23 3.1 藥品與溶劑 23 表3.1 藥品列表 23 表3.2 溶劑列表 24 3.2 儀器介紹 25 3.3 實驗流程 27 3.3.1 有機小分子之合成步驟 27 3.3.2 有機高分子之合成步驟 31 3.3.3 Polyurea/malonamide規則樹枝狀高分子之合成 31 3.4 有機薄膜電晶體元件製備 35 第四章 結果與討論 36 4.1 有機小分子及規則樹枝狀高分子之基本性質 36 4.1.1 熱性質探討 36 表4.1各種NDI與PDI衍生物與NDI高分子之5% 熱重量損失溫度 37 4.1.2 接觸角與表面能分析 39 表4.2 晶圓及不同表面修飾之晶圓接觸角以及表面能 39 4.1.3 規則樹枝狀高分子介電常數測定 40 表4.3 不同代數規則樹枝狀高分子之厚度、介電常數及其電容值 41 表4.4 不同代數規則樹枝狀高分子修飾後電晶體元件介電層之電容量 41 4.2 表面形貌分析 42 4.2.1 原子力顯微鏡 42 4.2.2 掠角入射廣角X光散射分析 48 4.3 有機薄膜電晶體之電性質分析 51 表4.5 以NDI-C4F7, PDI-C4F7, NDI-C7F9, PDI-C7F9為半導體層蒸鍍在不同介電層改質之基板上電晶體元件的載子遷移率及開關電流比 55 第五章 結論 58 第六章 參考文獻 59 第八章 附錄 72 | |
| dc.language.iso | zh-TW | |
| dc.subject | 有機場效薄膜電晶體 | zh_TW |
| dc.subject | 規則樹枝狀高分子 | zh_TW |
| dc.subject | 介電層 | zh_TW |
| dc.subject | 有機場效薄膜電晶體 | zh_TW |
| dc.subject | 規則樹枝狀高分子 | zh_TW |
| dc.subject | 介電層 | zh_TW |
| dc.subject | dendritic urea/malonamide | en |
| dc.subject | dendritic urea/malonamide | en |
| dc.subject | gate dielectric insulator | en |
| dc.subject | organic thin film transistors (OTFTs) | en |
| dc.subject | gate dielectric insulator | en |
| dc.subject | organic thin film transistors (OTFTs) | en |
| dc.title | 具有urea/malonamide鍵結之規則樹枝狀高分子介電層用於N型有機薄膜電晶體 | zh_TW |
| dc.title | Dendritic dielectric layer with urea/malonamide linkage for air stable n-channel organic thin film transistors | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 童世煌,邱文英,陳錦地 | |
| dc.subject.keyword | 有機場效薄膜電晶體,規則樹枝狀高分子,介電層, | zh_TW |
| dc.subject.keyword | dendritic urea/malonamide,gate dielectric insulator,organic thin film transistors (OTFTs), | en |
| dc.relation.page | 85 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-02-13 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 高分子科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 高分子科學與工程學研究所 | |
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