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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51112完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 梁啟德(Chi-Te Liang) | |
| dc.contributor.author | Cheng-Hua Liu | en |
| dc.contributor.author | 劉承華 | zh_TW |
| dc.date.accessioned | 2021-06-15T13:25:24Z | - |
| dc.date.available | 2021-05-17 | |
| dc.date.copyright | 2016-05-17 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-05-12 | |
| dc.identifier.citation | chapter 1
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51112 | - |
| dc.description.abstract | 二維材料奈米元件之量子傳輸與光電特性是本篇論文的研究主軸。為了延伸現今莫爾定律(10奈米以下元件製程)，以及面對未來半導體產業走向，去尋找合宜的新穎材料，並且研究這些材料在光、電甚至磁場下的量子物理傳輸特性，成為在應用面上刻不如緩的課題。
本篇論文著重的二維材料及其物理特性有：具有高的載子遷移率、透明度和可撓性的單層石墨烯(Graphene)，特別針對石墨烯奈米線(nanoribbon)和異質接面(p-n-p、p-n)元件的物理傳輸特性加以探討，以及近年熱門材料，同為二維結構當中的過渡性金屬化合物二硫化鉬(MoS2)作光電物理特性之研究。 我們採用新穎的製程方式來呈現良好石墨烯異質接面元件 (p-n-p，p-n) 的磁性傳輸特性，為了更加的了解接面傳輸特性，改良樣品品質的製程方式是十分受到注目的。此新穎製程為第一次嘗試無光阻劑並且僅需一道成長金屬步驟的乾淨製程，有別於其它雙閘極或是化學佈植的繁複步驟。製程關鍵在於調變光罩和樣品的距離，以致於在成長金屬時有效的控制在光罩下金屬擴散長度，進而達成佈植的效果。一般而言，金屬擴散都會使載子在傳輸時產生散射，依本實驗的結果發現少部分的金屬佈植並和空氣中的氧結合，可以達成佈植效果並將散射影響的情形降低而不影響所要觀察的量子傳輸特性。在磁場下觀測到2/3 〖 e〗^2/h 量子霍爾平台表示著p-n-p元件在接面上有好的能態密度疊加，提供載子好的傳輸通道，同時，在低磁場的弱局限效應所分析出的相位同調長度隨著閘極電壓變化呈獻出和電性量測相同的趨勢，同調長度隨著溫度變化也能分析出載子傳輸主要機制為電子-電子(electron-electron scattering)散射所造成，呈現出對於磁性量測的全面性。 我們進一步的研究石墨烯的迪拉克點在磁場下產生特殊的零階朗道能階做物理上的討論，此實驗為第一次利用p-n-p異質接面元件於低階簡併量子平台和接面產生的分數量子平台之間的相變變化來研究零階朗道能階。實驗中觀察到平台和平台之間隨著溫度變化有相位轉換交點，代表著載子在能量為零的零階朗道能階中不會有被局限的傳輸行為，藉由縮放行為(Scaling behavior)得到的縮放指數 ? 為0.21，此值為理論中絕對值 ?= 0.42的一半，展示出零階朗道能階的特別行為。另外，我們在一維奈米線的電性傳輸觀測到電導量子化也被獨立出新的章節作探討。 此外，我們研究單層二硫化鉬場效電晶體之光電量測特性。二硫化鉬是二維材料在光電應用中最有潛力的材料之一，但在照光之後，樣品會產生持久性光電流(Persistent photocurrent)，然而電流值的大小程級也不逕相同。儘管持久性光電流會對於光電元件應用上產生重要影響，但卻沒有一個明確的研究去顯示它的成因和特性，在本實驗中，將詳細的討論持久性光電流歸因於散佈在樣品中的位能分佈不均所產生的載子局限行為，更一步的利用懸浮二硫化鉬來證實這些分佈不均的位能來自為基板的效應。此外了解成因之後，持久性光電流將被深入的究發現可被溫度、光強度、電子躍遷能階和基板效應所調控，這個電流變化行為也合理的被物理RLPF模型解釋，提供未來以二硫化鉬為材料的應用元件很好的參考價值。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-15T13:25:24Z (GMT). No. of bitstreams: 1 ntu-105-F98222065-1.pdf: 4246496 bytes, checksum: 3a437b396c8a956b5377585ab04aeae5 (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | Contents
1. Introduction 1 References 4 2. Theoretical background 5 2.1 Physical properties of graphene 5 2.1.1 Electrical structure and zero band gap 6 2.1.2 Pseudospin 11 2.1.3 Klein Tunneling 12 2.1.4 Quantum Hall effect 15 2.1.5 Shubnikov-de Haas oscillation and massless effective mass 21 2.1.6 Quantum Hall Plateau-plateau transition 23 2.1.7 Weak localization 25 2.2 Molybdenum disulfide (MoS2) 28 2.2.1 Photoconductivity effect 30 2.2.2 Persistent photoconductivity 31 References 36 3. Experimental methods 39 3.1 Resist-free fabrication 39 3.2 Physical Property Measurement System 42 3.3 Optical measurement systems 43 3.4 Atomic force microscopy 47 3.5 OTS-functionalized substrates and electrical measurement method 48 References 54 4. Distinctive magnetotransport of graphene p-n-p junctions via resist-free fabrication and controlled diffusion of metallic contact 55 4.1 Introduction 55 4.2 Fabrication 56 4.3 Experimental results 57 4.4 Demonstration of p-n junction devices 66 4.5 Conclusion 68 References 70 5. Observation of quantum Hall plateau-plateau transition and scaling behavior of the zeroth Landau level in graphene p-n-p junction 73 5.1 Introduction 73 5.2 Fabrication 75 5.3 Experimental results 77 5.3.1 The doping effect from titanium diffusion 77 5.3.2 The doping effect simulated by theoretical dipining model 79 5.3.3 Characteristics of graphene p-n-p junction devices 82 5.3.4 Quantum Hall effect in p-n-p junction 84 5.3.5 Scaling behavior 89 5.3.6 The MR and the distribution of the energy levels of the LLs 93 5.4 Conclusion 96 References 98 6. Quantum conductance in graphene nanoribbons 102 6.1 Theoretical background 102 6.2 Fabrication method 106 6.3 Experimental results 109 6.4 Conclusion 111 References 112 7. Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect 113 7.1 Introduction 113 7.2 Fabrication 115 7.3 Measurement method 118 7.4 Experimental results and discussion 119 7.4.1 The PPC effect in a monolayer MoS2 transistor 119 7.4.2 Temperature dependence of PPC relaxation 125 7.4.3 The subtract effect of PPC 126 7.4.4 Discussion of PPC mechanism 130 7.4.5 The relationship between the PPC effect and transport behavior 134 7.4.6 Fitting of the PPC relaxation curves 137 7.4.7 Gate voltage dependence of the PPC 138 7.4.8 Transport characteristics of the MoS2 FET 141 7.4.9 Carrier mobility dependence of the PPC 142 7.4 conclusion 144 References 145 8. Conclusion 151 | |
| dc.language.iso | en | |
| dc.subject | 量子平台相位轉換 | zh_TW |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | 二硫化鉬 | zh_TW |
| dc.subject | 持續性光電流 | zh_TW |
| dc.subject | graphene | en |
| dc.subject | molybdenum disulfide | en |
| dc.subject | quantum Hall plateau-plateau transition | en |
| dc.subject | persistent photoconductivity | en |
| dc.title | 二維材料奈米元件之量子傳輸與光電特性 | zh_TW |
| dc.title | Quantum transport and optoelectronic properties of the nano devices composed of two-dimensional materials | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.coadvisor | 王偉華(Wei-Hua Wang) | |
| dc.contributor.oralexamcommittee | 陳俊維(Chun-Wei Chen),陳則銘(Tse-Ming Chen),陸紀亙(Chi-Ken Lu) | |
| dc.subject.keyword | 石墨烯,二硫化鉬,量子平台相位轉換,持續性光電流, | zh_TW |
| dc.subject.keyword | graphene,molybdenum disulfide,quantum Hall plateau-plateau transition,persistent photoconductivity, | en |
| dc.relation.page | 154 | |
| dc.identifier.doi | 10.6342/NTU201600251 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-05-13 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理學研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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