以自我塌陷軟性材料進行化學拔除製程

Abstract

化學拔除法是一個強而有力的表面圖案製程技術，不僅可以大量製造圖案，而且還能使圖案擁有高解析度。其作法是利用軟性材料作為印章，經過一連串實驗步驟後，將軟性材料上的圖案轉印至基材表面上，而且在傳統軟微影技術中會遭遇的問題，例如轉印圖案過程中，沾染的墨水印在表面上會有擴散現象，造成圖案產生缺陷，此現象在化學拔除法中並不會發生。另外，此技術搭配二次拔除方式，可以使圖案解析度更高。 然而，若是設計頂部可塌陷的軟性材料之印章搭配化學拔除法，則可以使這項技術更加多樣變化。當預先設計可塌陷的軟性材料之印章接觸到平坦的基材表面時，其頂部會塌陷至表面，塌陷部分與原先接觸到表面的部分會形成微小間隙，藉由此方式將大結構轉成小結構，以大幅改進化學拔除法受限於原始模板的侷限，此現象和製造出的微米圖形已經可在平方公分範圍的大小上大量產生。

Chemical lift-off lithography (CLL), a robust surface patterning technique, can be used to create patterns over a large area with high resolution. Conventional soft-lithography obstacles, e.g. lateral diffusion, does not occur in the process, and the double lift-off strategy can be used to further increase the technique resolution. Herein, well-designed roof-collapsed polydimethylsiloxane (PDMS) stamps are incorporated with the CLL process to expand the technique versatility. When the pre-designed PDMS stamp contacts a flat surface, parts of the PDMS feature collapse to form small gaps between the collapsed and the original feature contacting areas. This phenomenon is combined with the CLL process and micro scale features with patterns over a centimeter region are created.