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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 黃定洧(Ding-Wei Huang) | |
dc.contributor.author | Yung-Lin Chou | en |
dc.contributor.author | 周勇霖 | zh_TW |
dc.date.accessioned | 2021-06-15T12:26:40Z | - |
dc.date.available | 2017-08-24 | |
dc.date.copyright | 2016-08-24 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-09 | |
dc.identifier.citation | [1] G. Roelkens, Liu Liu, Di Liang, Richard Jones, Alexander Fang, Brian Koch, and John Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev., vol. 4, no. 6, pp. 751-779, 2010.
[2] Intel, “Light Peak: Overview,” Jun. 2011. [3] J. K. Doylend and A. P. Knights, “The evolution of silicon photonics as an enabling technology for optical interconnection,” Laser Photon. Rev., vol. 6, no. 4, pp. 504-525, Jul. 2012. [4] M. Feng, N. Holonyak, Jr., and R. Chan, “Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors,” Appl. Phys. Lett., vol. 84, no 1, pp. 151-153, Jan. 2004. [5] M. Feng, N. Holonyak, Jr., and R. Chan, “Quantum-well-base heterojunction bipolar light-emitting transistor,” Appl. Phys. Lett., vol. 84, no. 11, pp. 1952-1594, Mar. 2004. [6] P. M. Asbeck, M. C. F. Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, and K. C. Wang, “GaAlAs/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2032-2042, Oct. 1989. [7] W. Hafez, W. Snodgrass, and M. Feng, “12.5 nm base pseudomorphic heterojunction bipolar transistors achieving f T = 710 GHz and f MAX = 340 GHz,” Appl. Phys. Lett., vol. 87, pp. 252109, Dec. 2005. [8] David A. Ahmari, Gopal Raghavan, Quesnell J. Hartmann, Michael L. Hattendorf, M. Feng, and Gregory E. Stillman, “Temperature Dependence of InGaP/GaAs Heterojunction Bipolar Transistor DC and Small-Signal Behavior,” IEEE Trans. Electron Devices, vol. 46, no. 4, pp. 634-640, Apr. 1999. [9] W. Liu, S. K. Fan, T. Henderson, and D. Davito, “Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 40, no. 7, pp. 1351-1352, Jul. 1993. [10] I-Te Lee, “Characteristics of Temperature Effect on Optical Bandwidth and Cut-off Frequency in the Light Emitting Transistors,” Master Thesis, 2015, pp. 28-53. [11] M. Feng, N. Holonyak Jr., H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett., vol. 91, pp. 053501, Jul. 2007. [12] Sidney C. Kan, Dan Vassilovski, Ta C. Wu, and Kam Y. Lau, “Quantum capture limited modulation bandwidth of quantum well, wire, and dot lasers,” Appl. Phys. Lett., vol. 62, pp. 2307, Jun. 1993. [13] Sidney C. Kan, Dan Vassilovski, Ta C. Wu, and Kam Y. Lau, “On the effects of carrier diffusion and quantum capture in high speed modulation of quantum well lasers,” Appl. Phys. Lett., vol. 61, pp. 752, Feb. 1992. [14] H. Schneider and K. V. Klitzing, “Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1-xAs multiple-quantum well structure,” Phys. Rev. B, vol. 38, pp. 6160-6165, Sep. 1988. [15] Hauser, J. R., “The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries,” IEEE Trans. Electron Devices, vol. 1, pp. 238-242, May. 1964. [16] Shou-Chien Huang, Chia-Tsung Chang, Chun-Ting Pan, Yue-Ming Hsin, “Improved SiGe power HBT characteristics by emitter layout,” Solid-state electronics, vol. 52, pp, 942-951, Jun. 2008. [17] Kuldeep Amarnath, Rohit Grover, Subramanian Kanakaraju, and Ping-Tong Ho, “Electrically pumped InGaAsP-InP microring optical amplifiers and lasers with surface passivation,” IEEE photonics technology letters, vol. 17, no.11, pp. 2280-2282, Nov. 2005. [18] M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gérard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Höfling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett., vol. 100, pp. 031111, Jan. 2012. [19] Toshihide Ide and Toshihiko Baba, “Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding,” Optics express, vol. 13, no. 5, pp. 1615-1620, Mar. 2005. [20] Matsko, Andrey B., and Vladimir S. Ilchenko, “Optical resonators with whispering gallery modes I: basics,” IEEE J. Sel. Top. Quantum Electron, vol. 12, no. 1, pp. 3-14, Feb. 2006. [21] Di Liang, Marco Fiorentino, Tadashi Okumura, Hsu-Hao Chang, Daryl T. Spencer, Ying-Hao Kuo, Alexander W. Fang, Daoxin Dai, Raymond G. Beausoleil, and John E. Bowers, “Electrically-pumped compact hybrid silicon microring lasers for optical interconnects,” Optics express, vol. 17, no. 22, pp. 20355-20364, Oct. 2009. [22] S. Combrié, S. Bansropun, M. Lecomte, O. Parillaud, S. Cassette, H. Benisty, and J. Nagle, “Optimization of an inductively coupled plasma etching process of GaInP/GaAs based material for photonic band gap applications,” Journal of Vacuum Science & Technology B, vol. 23, pp. 1521-1526, Jul. 2005. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49950 | - |
dc.description.abstract | 本論文將探討發光電晶體之溫度感測機制與光電訊號轉換等兩大特性。考慮一個異質接面雙載子電晶體,在基極區中加入量子井成為量子井-異質接面雙載子電晶體或稱發光電晶體,在溫度感測機制方面,我們探討其溫度對於電訊號的影響,比較量子井-異質接面雙載子電晶體與一般異質接面雙載子電晶體之電流增益與溫度之關係,可以發現其呈現完全不同的趨勢,由此可知量子井在此溫度效應中扮演重要的角色。我們首先藉由改良式的電荷控制模型以及速率方程式來分析電子受到量子井影響所產生的捕捉-逃脫行為,及對於整個基極少數載子之間的耦合關係而推得理論模型,描述電流增益與溫度的關係。此外,我們改變不同磊晶結構,透過理論模型與模擬軟體來比較電流增益對溫度的趨勢,從而設計出最佳的增益曲線並在未來應用在溫度感測上。而對於不同的元件幾何結構,由於許多非理想效應難以考慮進理論模型中,因此我們實際製作出不同結構的量子井-異質接面雙載子電晶體元件,並透過模擬輔助以分析幾何結構對電流增益-溫度特性之影響。
在光電轉換特性方面,透過環形發光電晶體來達到光電整合系統之目的。我們將發光電晶體製作成環形共振腔結構,並探討不同尺寸及結構設計對於光訊號與電訊號的影響,由於其回音壁發光模態,光將沿著圓環行進因此沒有特定出光方向,為了能夠與其他元件溝通,我們設計波導將光導向特定方向,並在波導端點處設計光偵測器,此光偵測器同樣為發光電晶體結構,利用法蘭茲-卡爾迪西效應將環形發光電晶體之光訊號轉換為電訊號,並可計算出其轉換響應率。本篇論文展示了發光電晶體之多樣特性,期許能貢獻於未來光電整合電路的發展。 | zh_TW |
dc.description.abstract | In this thesis, we investigate two characteristics of (1) the temperature-sensing effect and (2) the optical-to-electrical signal transmission in light-emitting transistors (LETs). By embedding the quantum well (QW) into the base region of the heterojunction bipolar transistor (HBTs), the HBTs will form the QW-HBTs (or so-called LETs). In the temperature-sensing investigation, we analyze the thermal effects on the electrical signals. Comparing the temperature-dependent current gain, β(T), in QW-HBTs to the current gain of the normal HBTs, we can observe the totally opposite trend, presenting that the QW plays an important role in the thermal mechanism. We derive the modified charge control model and rate equations to analyze the carrier capturing and escaping behavior related to the QW and the carriers coupling to the whole base charge. Moreover, we alter the epitaxial structures and compare the effects on the trend of β(T) through the theoretical model we build and simulation software. We can find out the optimal layer design of current gain curve for applying to the temperature sensing in the future. For the effects on the different device geometries, because of many non-ideal effects, we directly fabricate the QW-HBT devices with different layout designs and variations. Also the simulation tool is used to help the analyses of the thermal effects on the β(T).
In the optical-to-electrical signal transmission part, we demonstrate the integration of optoelectronic system realized by the ring-shaped light-emitting transistors, or RLETs. We fabricate the LETs with the ring-shaped resonator structures, and analyze the effects of different sizes and geometries on the optical and electrical outputs. Owing to the whispering gallery modes (WGMs), the optical modes will propagate along the ring periphery without any output direction. In order to communicate to other devices, we incorporate the waveguides to guide the light in the specific direction. In the end of the waveguide, we incorporate the photodetectors which consist of the same epitaxial structure of RLETs. According to Franz-Keldysh effect, the light from the RLETs can be transferred to the electrical signal by the base-collector junction of the detector LETs, and hence we can calculate the responsivity. This thesis presents the functional characteristics of LETs, and we hope to contribute to the development of the optoelectronic integrated circuits (OEICs) in the future. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T12:26:40Z (GMT). No. of bitstreams: 1 ntu-105-R03941080-1.pdf: 3407286 bytes, checksum: 7ae9ca28d778b1a9480fb53eb5281a30 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 口試委員審定書 I
致謝 II 中文摘要 III Abstract IV Contents VI List of Figures IX List of Tables XVI Chapter 1. Introduction 1 1.1. Background and Motivation 1 1.2. Overview 4 Chapter 2. Analysis of Thermal Mechanisms of Current Gain β(T) in Quantum Well-Based Heterojunction Bipolar Transistor 5 2.1. Preface 5 2.2. From HBT to QW-HBT 6 2.3. Temperature-Dependent Current Gain Model 9 2.4. β(T) Model under Different QW Structures 13 2.5. Simulation Results Compared to β(T) Model 16 Chapter 3. Investigation of the Effects on Geometrical Layout of QW-HBT for β(T) 20 3.1. Preface 20 3.2. Epitaxial Structure 21 3.3. Characteristics of QW-HBT at Room Temperature 22 3.3.1. Square Type Devices 22 3.3.2. Finger Type Devices 28 3.3.3. Comparison of Square and Finger Device 33 3.4. Characteristics of QW-HBT at Elevated Temperature 35 3.5. Characteristics of Series Devices 37 Chapter 4. The Integrated Optoelectronic System Realized by Ring-shaped Light-Emitting Transistors (RLETs) 42 4.1. Preface 42 4.2. Device Design and Fabrication 43 4.2.1. Layout Design 43 4.2.2. Epitaxial Structure and Operation Principle 47 4.2.3. Fabrication Flow 49 4.3. Characteristics of RLET Devices 54 4.3.1. Effects on Ring Diameters 54 4.3.2. Effects on Collector Mesa and Metal Designs 56 4.3.3. Effects on Base and Emitter Designs 58 4.4. Integration of RLET Light Sources and Photodetectors 61 Chapter 5. Conclusion 68 References 70 | |
dc.language.iso | en | |
dc.title | 發光電晶體之感溫機制與光電整合系統之研究 | zh_TW |
dc.title | Investigation of Temperature-Sensing Mechanism and Integrated Optoelectronic System in Light-Emitting Transistors | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.oralexamcommittee | 張書維(Shu-Wei Chang),林恭如(Gong-Ru Lin) | |
dc.subject.keyword | 發光電晶體,載子捕捉逃脫,環形共振腔,光電整合系統,光連結, | zh_TW |
dc.subject.keyword | light-emitting transistors,carrier capturing and escaping,ring-shaped resonators,optoelectronic integrated system,optical interconnects, | en |
dc.relation.page | 72 | |
dc.identifier.doi | 10.6342/NTU201602141 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-10 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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