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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 楊英杰(Ying-Jay Yang) | |
dc.contributor.author | Hong-Ming Wu | en |
dc.contributor.author | 吳宏明 | zh_TW |
dc.date.accessioned | 2021-06-15T11:45:53Z | - |
dc.date.available | 2021-08-25 | |
dc.date.copyright | 2016-08-25 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-14 | |
dc.identifier.citation | 參考文獻
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49749 | - |
dc.description.abstract | 我們分析磷化銦鎵直接成長於4吋鍺基板的有序排列特性,利用TEM的繞射圖形指出,在我們的樣品為Cu-Pt B的有序排列,並且有序排列方向為[1-11],這個方向垂直於Ge基板斜切方向,並且只有單一有序排列方向,而TEM高解析影像中的InGaP/Ge介面處,沒有發現到antiphase domain的存在。另外,室溫PL量測下,計算晶圓中心樣品有序排列係數為0.47,而在晶圓邊緣樣品發現雙波峰的現象,利用蝕刻的方式來研究雙波峰分別的來源,實驗顯示在低能量為上層磷化銦鎵的貢獻,而高能量的波峰來自下層,這樣的結果我們推測雙波峰現象為高與低的磷化銦鎵有序排列放光造成,其原因是鍺外部擴散,使得鍺原子擴散到磷化銦鎵磊晶層中,破壞了原有的三族有序排列。最後由拉曼頻譜分析中,利用固定雷射偏振方向,旋轉樣品來觀察354cm-1有序排列之相關波峰,驗證在我們的樣品中Cu-Pt B有序排列方向確實在[1-11]。
接著我們研究鍺的自動摻雜與外部擴散現象,並且利用二次離子質譜儀,量測出在磷化銦鎵磊晶層中鍺原子的分佈。分析指出,鍺的外部擴散範圍約為100 nm,然而在晶圓邊緣的樣品比晶圓中心樣品有著更嚴重的鍺原子自動摻雜現象,使得磷化銦鎵有序排列退化。在晶圓邊緣樣品中,我們觀察到Cu-Pt有序排列殘留於磊晶表層,推測有序排列退化是發生在沉積之後,藉由鍺原子移動使得In/Ga原子同樣進行相互擴散,而不是經由鍺氣相態的自動摻雜,增加In/Ga原子相互擴散造成的退化。另外,我們提出了雙空缺模型來說明鍺的外部擴散現象以及擴散對磷化銦鎵有序排列的影響。在雙空缺模型中,鍺原子的雙性特性將增加雙空缺的密度,而這樣的結果指出鍺濃度和擴散現象是相依的。另一方面,In/Ga原子相互擴散和鍺外部擴散現象是藉由In/Ga原子跳動行為與鍺原子經由雙空缺移動,兩者進行才能實現。基於此模型下,我們模擬鍺外部擴散現象,其完美的擬合鍺在二次離子質譜的曲線。由擬合結果獲得鍺的擴散係數,並由殘餘有序排列層厚度,估計出磷化銦鎵有序排列退化中的時間常數。我們推演出鍺原子和In/Ga原子的跳動率是在同一個數量級,而這樣的結果指出雙空缺易於鍺原子附近結合。 最後我們比較鍺氣相自動摻雜和外部擴散效應在有和沒有Si3N4覆蓋於鍺基板背面,在晶圓邊緣的樣品比中心樣品有著較強的鍺氣相自動摻雜現象,這增加了鍺原子併入初始的GeIII和GeV,使外部擴散效應增加。在SIMS的自動摻雜區指出覆蓋Si3N4的樣品大量減少了自動摻雜的濃度,但在晶圓的邊緣中並沒有被覆蓋到,這樣的結果導致SIMS圖中自動摻雜區呈現了指數型衰減曲線。在有和沒有覆蓋Si3N4的邊緣樣品中,我們觀察到殘留Cu-Pt有序排列層存在於樣品的表面,推測在沉積之後有序排列將被破壞。我們使用了雙空缺擴散模型並加上指數型摔減的自動摻雜初始值,其中有兩性特性的鍺增加了GeIII/GeV補償比例,增加了雙空缺密度促進In/Ga交互擴散。模擬擬合了中心和邊緣樣品外部擴散曲線並擬合的很好。在邊緣的樣品中有覆蓋Si3N4樣品在室溫下的PL雙峰能量差比沒有覆蓋的來的接近,這是因為大量減少了氣相的自動摻雜,增加了磊晶層中有序排列的均勻度,這樣的結果和雙空缺模型所推測的一致。 | zh_TW |
dc.description.abstract | We report on the structural properties of ordering InGaP directly deposited on (001) Ge substrate by organometallic vapor phase epitaxy. The Ge substrate is 6° miscut towards (110). Results from transmission electron diffraction indicate the existence of CuPt-B ordering phase in the sample. The ordering direction is assigned to be [1-11], which is perpendicular to the miscut direction of the Ge substrate. Because only one ordering phase is observed, no anti-phase domain exists in the sample. The order parameter determined from photoluminescence at room temperature is 0.47. Raman scattering was also used to analyze the ordering effect. A mode at 354 cm-1 relevant to the ordering phase confirms that the CuPt-B ordering is along [111].
We study Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-inch. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for the deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the divacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms. Finally, we compare of the Ge gas phase auto-doping and out-diffusion in InGaP epilayers grown on 4-inch with and without Si3N4 coating on backside of Ge substrate by organometallic vapour phase epitaxy. The edge of the wafer suffers from stronger Ge gas-phase auto-doping than the centre, which increase Ge atoms incorporate of initial GeIII and GeV and leading enhancement of out-diffusion. In SIMS auto-doping region indicate the Si3N4 capping backside sample reduces the most of all gas phase auto-doping, but only substrate wafer side uncapping. This result leading to auto-doping region present exponent decay profile in SIMS. In the with and without edge sample, we observed a residual Cu-Pt ordering layer left beneath the surface, suggest that the deteriorating of the ordering takes place after the deposition. We used di-vacancy diffusion model and added exponent decay of gas-phase auto-doping, in which the amphoteric Ge increases GeV/GeIII compensation ratio and promotes In/Ga inter-diffusion with increasing the di-vacancy density. Simulation based on this model well fits the Ge out-diffusion profile in the both sample, suggesting its validity. In edge sample, with coating sample of PL energy different of two peak is close than without sample. It attribute decrease of gas-phase auto-doping and enhancement uniformity of degree of order in depth of epilayer. These findings are obviously in consistent with that obtained from the Di-vacancy model. | en |
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dc.description.tableofcontents | 目錄
致謝 I 中文摘要 IV Abstract VII 目錄 X 表目錄 XIII 圖目錄 XV 第一章 序論 1.1磷化銦鎵與鍺材料應用 1 1.2 磷化銦鎵Cu-Pt 有序排列 1 1.3 摻雜對於磷化銦鎵的有序排列影響 2 1.4 鍺擴散效應應用 3 1.5 研究動機 4 1.6 論文內容概述 5 第二章 實驗架構與量測方法 2.1樣品成長條件 10 2.2樣品成蝕刻條件 10 2.3微光譜拉曼散射系統(Raman) 11 2.4拉曼量測樣品方向與雷射極化定義 12 2.5光激發螢光實驗架構 12 2.6二次離子質譜儀 (SIMS) 13 2.7電化學電容電壓量測 (Electrochemical CV, ECV) 14 第三章 InGaP/Ge 有序排列方向與雙峰現象 3.1雙峰樣品蝕刻前後光激螢光頻譜分析 19 3.2拉曼頻譜在水平與垂直極化分析 20 3.3雙峰樣品蝕刻前後拉曼頻譜分析 31 3.4利用TEM定出有序排列於InGaP/Ge晶圓中之方向 32 第四章 雙空缺模型擬合與鍺的外部擴散效應對於磷化銦鎵有續排列影響 4.1利用X光繞射頻譜與光激發螢光頻譜計算有序排列程度 42 4.2利用二次離子質譜(SIMS)討論鍺原子擴散於磷化銦鎵磊晶層 47 4.3有序雙空缺跳動模型(Di-vacancy hopping model)推導與分析 48 4.4 In/Ga相互擴散與有序排列程度之關係 54 4.5拉曼量測有序排列在自動摻雜區之關係 58 第五章 鍍氮化矽於鍺基板底部對於自動摻雜與外部擴散之影響 5.1二次離子質譜比較Si3N4有無覆蓋鍺基板底部 70 5.2利用雙空缺跳動模型擬合二次離子質譜外部擴散區曲線 73 5.3光激螢光頻譜比較有鍍和未鍍Si3N4之有序排列程度之關係 76 5.4拉曼量測有序排列在自動摻雜區和外部擴散區之關係 81 5.5比較PL波峰與b/a比值和鍺擴散之關係 82 第六章 結論 96 參考文獻 99 表目錄 第三章 表3.1蝕刻InGaP時間、深度和速率 41 表3.2拉曼量測C3V selection rule計算8種方向 41 第四章 表4.1磷化銦鎵/鍺中心位置樣品晶格不匹配程度、成分、應變、隨機排列能隙與有序排列成度計算 68 表4.2 鍺外部擴散曲線之模擬參數 68 表4.3 中心樣品光激螢光頻譜擬合波峰能量位置與有序排列係數 68 表4.4邊緣樣品光激螢光頻譜擬合波峰能量位置與有序排列係數 69 表4.5中心樣品與邊緣樣品於拉曼頻譜在不同蝕刻深度下之b/a、354 cm-1和FLA列表 69 第五章 表5.1鍍上Si3N4之鍺外部擴散曲線模擬參數 95 表5.2中心樣品光激螢光頻譜擬合波峰能量位置與有序排列係數 95 表5.3邊緣樣品光激螢光頻譜擬合波峰能量位置與有序排列係數 95 表5.4未鍍和鍍上Si3N4磷化銦鎵/鍺中心位置樣品晶格不匹配程度、成分、應變、隨機排列能隙與有序排列成度計算 96 表5.5中心樣品與邊緣樣品於拉曼頻譜在不同蝕刻深度下之b/a、354 cm-1和FLA列表 96 圖目錄 第一章 圖1.1典型三接面太陽能電池結構與能係圖 8 圖1.2 (a)閃鋅礦結構圖 (b)Cu-Pt結構圖 (c)SAD之閃鋅結構繞射圖像 (d)SAD有序排列繞射圖像 8 圖1.3能帶(a)無序排列和(b)有序排列變化示意圖 9 圖1.4 五族原子向下擴散進入鍺基板自然形成PN介面 9 第二章 圖2.1磷化銦鎵蝕刻示意圖 16 圖2.2 HORIBA Jobin-Yvon T6400微光譜拉曼散射系統架構圖 16 圖2.3 T6400光譜系統內部架構圖 17 圖2.4拉曼散射量測樣品於晶圓方向與入射/散射光Z(XX)Z ̅平行極化方向示意圖 17 圖2.5光激螢光量測系統架構圖 18 圖2.6 (a)P-type半導體空乏區 (b) N-type半導體空乏區 18 第三章 圖3.1蝕刻邊緣樣品剖面示意圖 35 圖3.2邊緣樣品於蝕刻前蝕刻後低溫光激螢光頻譜圖 35 圖3.3極化拉曼量測樣品方向與雷射方向定義圖 36 圖3.4量測六種極化方向之拉曼頻譜 36 圖3.5邊緣樣品於蝕刻前蝕刻後拉曼頻譜 37 圖3.6邊緣樣品於蝕刻前蝕刻後b/a比值與PL能量對應圖 37 圖3.7定義TEM樣品在晶圓中X和Y方向 38 圖3.8定義TEM樣品在晶圓中電子束分別進入的平面 38 圖3.9 (a) TEM-A樣品中InGaP/Ge介面處高解析影像 (b) TEM-B樣品中 InGaP/Ge介面處高解析影像 39 圖3.10 (a) TEM-A樣品中SAD繞射點圖案(b) TEM-B樣品中SAD繞射點圖案 39 圖3.11 P-dimer至換表面Ge原子並平行於step edge原子示意圖 40 圖3.12 InGaP/Ge中有序排列方向在空間示意圖 40 第四章 圖4.1磷化銦鎵/鍺 XRD 60 圖4.2應變使價帶分裂成重電洞帶與輕電洞帶 61 圖4.3磷化銦鎵/鍺中心位置樣品常溫光激螢光頻譜與擬合曲線 61 圖4.4磷化銦鎵/鍺介面處之鍺原子二次離子質譜 62 圖4.5 鍺原子利用雙空缺進行擴散 62 圖4.6 在[001]方向十二種雙空缺與鍺原子佔據之模型圖 63 圖4.7 磷化銦鎵/鍺介面處之鍺原子二次離子質譜與電化學電容電壓 63 圖4.8外部擴散區雙空缺跳動模型擬合SIMS之曲線 64 圖4.9中心樣品在不同蝕刻深度下之光激螢光頻譜 64 圖4.10中心樣品在不同蝕刻深度下之能量相關的B-B放光強度關係擬合 65 圖4.11邊緣樣品在不同蝕刻深度下之光激螢光頻譜 66 圖4.12邊緣樣品在不同蝕刻深度下之能量相關的B-B放光強度關係擬合 66 圖4.13雙空缺模型於原子的相互擴散在相鄰的(111)單原子層 67 圖4.14不同蝕刻深度下的拉曼量測(a)中心樣品 (b)邊緣樣品 67 第五章 圖5.1有無鍍Si3N4的磷化銦鎵/鍺介面處之鍺原子二次離子質譜 84 圖5.2鍺自動摻雜於長晶初期、中期和晚期示意圖 84 圖5.3外部擴散區雙空缺跳動模型擬合SIMS之曲線 85 圖5.4磷化銦鎵/鍺介面處之鍺原子二次離子質譜與電化學電容電壓 85 圖5.5在邊緣樣品與中心樣品之GeV/GeIII估算比例 86 圖5.6中心樣品在不同蝕刻深度下之光激螢光頻譜 86 圖5.7中心樣品在不同蝕刻深度下之能量相關的B-B放光強度關係擬合 87 圖5.8中心樣品在不同蝕刻深度下之光激螢光頻譜 87 圖5.9邊緣樣品在不同蝕刻深度下之能量相關的B-B放光強度關係擬合 88 圖5.10在中心與邊緣樣品的有序排列影響之能帶關係架構圖 88 圖5.11鍺基板有無鍍上Si3N4中心樣品光激螢光頻譜圖 89 圖5.12鍺基板有無鍍上Si3N4邊緣樣品光激螢光頻譜圖 89 圖5.13調變雷射功率在鍍上與未鍍上Si3N4中心樣品10 K光激螢光頻譜 90 圖5.14 第二型態有序排列程度不均勻造成空間分裂示意圖 90 圖5.15 (a)鍍Si3N4中心樣品之變溫光激螢光頻譜 (b)S-sharp現象於10-80 K光激螢光頻譜圖 91 圖5.16不同蝕刻深度下的拉曼量測(a)中心樣品 (b)邊緣樣品 91 圖5.17沒有鍍Si3N4中心樣品在不同深度下SIMS、PL波峰、b/a比值關係 92 圖5.18鍍Si3N4中心樣品在不同深度下SIMS、PL波峰、b/a比值關係 92 圖5.19沒有鍍Si3N4邊緣樣品在不同深度下SIMS、PL波峰、b/a比值係 93 圖5.20鍍Si3N4邊緣樣品在不同深度下SIMS、PL波峰、b/a比值關係 93 | |
dc.language.iso | zh-TW | |
dc.title | 利用雙空缺模型分析鍺的外部擴散效應與自動摻雜對於磷化銦鎵長在鍺基板有序排列之影響 | zh_TW |
dc.title | Using the di-vacancy hopping model to analyse Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 博士 | |
dc.contributor.coadvisor | 林浩雄(Hao-Hsiung Lin) | |
dc.contributor.oralexamcommittee | 張六文(Liu-Wen Chang),楊哲人(Jer-Ren Yang),蔡世貞(Shi-Jane Tsai),溫偉源(Wei-Yen Woon) | |
dc.subject.keyword | 雙空缺跳動模型,外部擴散,相互擴散,有序排列, | zh_TW |
dc.subject.keyword | Di-vacancy hopping model,out-diffusion,inter-diffusion,ordering, | en |
dc.relation.page | 105 | |
dc.identifier.doi | 10.6342/NTU201602411 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-15 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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