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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
dc.contributor.author | Thein Naing | en |
dc.contributor.author | 伍存龍 | zh_TW |
dc.date.accessioned | 2021-06-15T11:38:58Z | - |
dc.date.available | 2019-08-24 | |
dc.date.copyright | 2016-08-24 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-15 | |
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[21] Lin Zizeng, Cao Mingmin, Wang Shengkai, Li Qi, Xiao Gongli, Gao Xi, Liu Honggang, and Li Haiou, “The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/ Al2O3/ InGaAs MOS capacitors properties,” Journal of Semiconductors, Vol. 37, No. 2, 2016. [22] R. Timm, A. Fian, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen , “Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2,” Appl. Phys. Lett., Vol. 97, p. 132904, 2010. [23] K. Cherkaoui, S. Monaghan, M. A. Negara, et. al., “Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation,” J. Appl. Phys. 104, 064113 (2008). [24] Jang-Hyuk Hong, Tae-Hyoung Moon, Jae-Min Myoung, “Microstructure and characteristics of the HfO2 dielectric layers grown by metalorganic molecular beam epitaxy,” Microelectronic Engineering 75, p.263-p.268, 2004. 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[29] Yu-Seon Kang, Hang-Kyu Kang, Dae-Kyoung Kim, Kwang-Sik Jeong, Min Baik, Youngseo An, Hyoungsub Kim, Jin-Dong Song, and Mann-Ho Cho, “Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability,” ACS Appl. Mater. Interfaces, 2016, 8 (11), pp 7489–7498. [30] Md. Shahinur Rahman, E. K. Evangelou, N. Konofaos, and A. Dimoulas, “Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates,” Journal of Applied Physics 112, 094501 (2012). [31] Y. Yuan, L. Q. Wang, B. Yu, et. al., “A Distributed Model for Border Traps in Al2O3 –InGaAs MOS Devices,” IEEE Electron Device Letters, vol. 32, p. 485-p. 487, 2011. [32] Chun Zhao, “Dielectric Relaxation and Frequency Dependence of HfO2 Doped by Lanthanide Elements, ” University of Liverpool. [33] 許哲瑋, “氧化鉿/ 砷化銦金氧半結構之製備與界面電性研究,” 國立中央大學碩士論文, 2012. [34] Dana C. Wheeler, “High-k-InAs metal-oxide-semiconductor capacitors formed by atomic-layer deposition,” University of Notre Dame. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49635 | - |
dc.description.abstract | 本論文利用氧化層磊晶系統(Oxide MBE system) 在砷化銦基板上成長氧化鉿的金氧半電容元件之特性分析。氧化鉿的成長方式為鉿金屬搭配氧氣電漿成長,有做氫氣電漿前置處理及沒有氫氣電漿前置處理比較; 在成長氧化層前先用氫氣電漿前置處理有效去除原生氧化物及修復浮懸鍵結(dangling bonds)鈍化(passivation)基板,減少C-V曲線延伸(stretch-out)現象。並且可有效抑制閘極漏電流密度,在-1 V時閘極漏電流密度約為1x10-6 A/cm2。利用X 光射線電子能譜儀(XPS)探討有氫氣電漿前置處理及無氫氣電漿前置處理的表面狀況,有氫氣電漿前置處理的介面原生氧化層大幅度降低。利用鉿(Hf) 4f軌域及氧(O) 1s軌域頻譜計算氧化層的品值。得Hf及O比值為1:1.95非常接近理想的1:2。沒有氫氣電漿前置處理的介面原生氧化物明顯地偵測到,在-1 V時閘極漏電流密度約為1x10-4 A/cm2,比有氫氣電漿前置處理高2個數量級。利用鉿(Hf) 4f軌域及氧(O) 1s軌域頻譜計算Hf及O比值為1:1.79。部分氧會跟基板元素結合故氧的比值較低於理想值。經金屬後退火處理後(Post Metallization Annealing)電容調變率變大,費米能階釘札(Fermi-level pinning)改善,有效改善元件特性。正反掃電容-電壓圖計算出磁滯電壓差(hysteresis)來判斷氧化層內缺陷的增減及探討邊緣缺陷(border trap)造成的累積區頻散(Accumulation frequency dispersion)的問題。
本論文亦研究使用氫氣電漿前置處理後在成長氧化層時加入導流板(deflector)偏壓去除氧氣電漿內的带電離子(ionic species)成長出缺陷較少的氧化層。有加導流板量測所得電容值較大,有效減少带電離子成長出較簿的氧化層且品質較好。在-1 V時閘極漏電流密度約為4x10-6 A/cm2。加導流板偏壓750 V的元件在金屬後退火處理前磁滯電壓差為114 mV,做金屬後退火處理後磁滯電壓差為57 mV。沒加導流板偏壓的元件在金屬後退火處理前磁滯電壓差為205 mV,做金屬後退火處理後磁滯電壓差為90 mV。加導流板有效提升元件特性。邊緣缺陷密度(border trap density)也隨著金屬後退火處理後減少。累積區頻散(Accumulation frequency dispersion)也有所改善。 | zh_TW |
dc.description.abstract | In this thesis, we use Oxide MBE system to deposit oxide layers (HfO2) on InAs substrates to fabricate the Metal-oxide-semiconductor capacitor (MOSCAP). Hafnium dioxide was grown by hafnium metal source with oxygen plasma. Before depositing high κ dielectric layers, we used hydrogen plasma to remove the native oxide and passivate the substrates, which effectively reduced C-V stretch-out and suppressed the gate leakage current density, which was about 1x10-6 A/cm2 at Vg = -1 V. We used X-ray photoelectron spectroscopy (XPS) to discuss interface properties with and without hydrogen plasma pretreatment. With hydrogen plasma treatment, the XPS spectra show that the treatment can effectively reduce As-related oxides. And then, we used Hf (4f) spectrum and O (1s) spectrum to calculate the ratio of Hf and O, which is 1: 1.95. It is very close to prefect ratio, which can justify quality of oxide layers. Without hydrogen plasma treatment, the data of XPS showed the signal of native oxides distinctly. The gate leakage current density was about 1x10-4 A/ cm2 at Vg = -1 V, two order higher than that of with hydrogen plasma pretreatment. We used Hf (4f) spectrum and O (1s) spectrum to calculate the ratio of Hf and O is 1: 1.79, some portion of oxygen combined with As- and In- is not close to perfect ratio. The results show that with post metallization annealing improve device performances exhibiting larger C-V modulation, unpinned Fermi-level. By bidirectional C-V sweep, we calculated hysteresis voltage difference(ΔV), which used to determine whether oxide layer traps increasing or decreasing. The problems of border traps due to accumulation frequency dispersion will be discussed later.
In this thesis, we also use deflector bias when growing HfO2. Using the deflector can effectively reduce ionic species and get high quality oxide layer. With deflector bias, we get larger capacitances and thinner oxide layers. The gate leakage current density is about 4x10-6 A/ cm2 at Vg = -1 V. With deflector bias at 750 V, the samples showed hysteresis voltage difference is 114 mV before Post Metallization Anealing (PMA) and 57 mV after PMA. Without deflector bias, the samples showed hysteresis voltage difference is 205 mV before PMA and 90 mV after PMA. With deflector bias, it can effectively improve device performances. Border trap density and accumulation frequency dispersion are also effectively reduced by post metallization annealing process. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T11:38:58Z (GMT). No. of bitstreams: 1 ntu-105-R03943067-1.pdf: 2319581 bytes, checksum: 698cbb5888d94da23e1799c33a53ab21 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 摘要 i
Abstract iiii 目錄 v 圖目錄 viiii 表目錄 x 第一章 緒論 1 1-1 前言 1 1-2 研究動機 2 1-2.1 通道材料選擇 2 1-2.2 介電材料選擇 4 1-3 論文架構 5 第二章 實驗儀器與理論基礎 6 2-1 氧化物磊晶系統(Oxide MBE system) 6 2-2 電極之製作 8 2-3 X 射線光電子能譜(X-ray photoelectron spectroscopy) 8 2-3.1 CasaXPS擬合步驟 9 2-4 金氧半電容之物理特性 12 2-4.1 量測模型 12 2-4.2 累積區(Accumulation region) 15 2-4.3 空乏區(Depletion region) 15 2-4.4 反轉區(Inversion region) 16 2-4.5 平帶情況 18 2-5 氧化層之缺陷電荷 19 2-5.1 介面缺陷電荷(Interface trap charge, QIT) 20 2-5.2 固定氧化層電荷(Fixed Oxide charge, QF) 20 2-5.3 氧化層缺陷電荷(Oxide trap charge, QOT) 21 2-5.4 移動離子電荷(Mobile ion charge, QM) 21 第三章 Oxide MBE臨場(in-situ)沉積氧化鉿/砷化銦金氧半製作與分析 22 3-1 元件製作簡介 22 3-1.1 試片準備及氧化層成長 22 3-2 有氫氣前置處理與無氫氣前置處理電性分析 23 3-3 利用X ray photoelectron spectroscopy分析有無氫氣前置處理的介面 27 3-3.1 In 3d 與 As 3d軌域分析 27 3-3.2 利用Hf 4f 及O 1s軌域 分析 Hf及O比值 29 3-4 金屬後退火處理後的影響 31 3-5 平带電壓求法及磁滯現象分析 32 3-5.1 平带電壓求法 32 3-5.2 磁滯電壓分析 35 3-6 變頻電容-電壓分析 38 第四章 成長HfO2時同時開Deflector的元件特性分析 44 4-1 加導流板成長氧化層的元件製作 44 4-2 金屬後退火處理後的影響 48 4-3 平带電壓求法及磁滯現象分析 49 4-4 變頻電容-電壓分析 52 第五章 結論 57 參考資料 58 | |
dc.language.iso | zh-TW | |
dc.title | 利用氫氣電漿清理砷化銦基板再用氧化物磊晶系統成長氧化鉿之介面特性分析 | zh_TW |
dc.title | Analysis of Hydrogen plasma clean before deposition of HfO2 on InAs by Oxide MBE system with deflector interface | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 葉凌彥,林佑儒,陳書涵 | |
dc.subject.keyword | 砷化銦,氧化物磊晶系統,氧化鉿,氫氣電漿,導流板,金屬後退火,邊緣缺陷,累積區頻散, | zh_TW |
dc.subject.keyword | InAs,Oxide MBE system,HfO2,Hydrogen plasma,Deflector,Post Metal Annealing,Border trap,Accumulation frequency dispersion, | en |
dc.relation.page | 61 | |
dc.identifier.doi | 10.6342/NTU201602557 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-16 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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