利用自我塌陷軟性材料結合化學拔除法之奈米製程

Abstract

在奈米製程技術中，光微影技術因低成本，高產率的優勢而被廣泛運用於學術界以及科技業界，然而隨著奈米製程愈做愈小，圖案解析度受限於繞射極限的光微影技術開始遭遇困難。因此我們在這篇研究中以自我塌陷軟性材料結合近期發表於國際期刊的化學拔除法，在保有低成本、高產率的優勢下以微米等級的製程來突破光繞射極限得到更好的奈米解析度。當軟性材料與表面接觸時，因為材料本身具有形變的特性而發生塌陷行為，在塌陷的區域和原本接觸的區域之間會存在著間隙，這間隙所形成的圖案大約只有原本的圖案十分之一左右，用這樣的方式我們可以從微米的操作條件來做出奈米等級的大面積圖形。

Conventional Photolithography is an important technique in array patterning. However, diffraction of light occurring in the process limits the pattern resolution significantly. Herein, well-designed roof-collapsed polydimethylsiloxane (PDMS) stamps incorporated with chemical lift-off lithography (CLL) is used to print large area features with high resolution. When pre-designed stamp features come into contact with the substrate, parts of the PDMS stamp collapse onto the surface and creates gaps between the original contacting and the collapsing areas. These resulting gaps were found to be 10-fold smaller than the stamp feature sizes. Large area nanostructure patterning can therefore be achieved through the use of micro scale feature design.