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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Li-Jen Chen | en |
dc.contributor.author | 陳立錚 | zh_TW |
dc.date.accessioned | 2021-06-15T11:19:51Z | - |
dc.date.available | 2021-08-26 | |
dc.date.copyright | 2016-08-26 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-18 | |
dc.identifier.citation | 1. B. F. Levine, K. K. Choi, C. G. Bethea, J. Walker and R. J. Malik, Appl. Phys. Lett. 50, 1092 (1987)
2. E. Dupont, “Optimization of lamellar gratings for quantum-well infrared photodetectors,” J. Appl. Phys. 88, 5 (2000). 3. C. H . Kuan, W. H. Hsieh, S. Y. Lin, C. C. Chen, and J. M. Chen, “Proceedings of SPIE ”The International Society for optical Engineering,” v4288, p151-162 (2001) 4. H. C. Chen. “Multicolor Intersubband Infrared Photodetectors applied for Temperature Sensing”, “Spectral Metering and Thermal Imaging,” 5. Y. Fu, M. Willander, W. Lu, and Wenlan Xu, “Optical coupling in quantum well infrared photodetector by diffraction grating,” J. Appl. Phys. 84 , 10 (1998). 6. Eustance L. Dereniak and Devon G, Crowe, Optical Radiation Detectors, John Wiley & Sons, Inc. , New York, (1984). 7. Richard D. Hudson, Jr. & Jacqueline Wordsworth Hudson, Infrared Detectors, Dowden, Hutchinson & Ross ; New York : distributed by Halsted Press, (1975) 8. K. K. Choi , The Physics of Quantum Well Infrared Photodetectors, (1997). 9. H. C. Liu, B. F. Levine, and J. Y. Anderson, Quantum Well Intersubband Transition Physics and Devices, Luwer Academic Publiisher, Dordercht, (1994) 10. Sarath D. Gunapala, Jin S. Park, Gabby Sarusi, True-Lon Lin, John K. Liu, Paul D. Maker, Richard E. Muller, Craig A. Shott, and Ted Hoelter, “15-μm 128*128 GaAs /AlxGa1-xAs Quantum Well Infrared Photodetector Focal Plane Array Camera,”IEEE Transactions on Electron Devices, Vol. 44, No. 1, (1997) 11. Semiconductor Integrated Circuit Processing Technology, by Addison Wesley 12. Gallium Arsenide Processing Techniques, by Ralph E. Williams 13. K. K. Choi “The Physics of Quantum Well Infrared Photodetectors”, Published by World Scientific. 14. Ralph E. Williams, “Gallium Arsenide Processing Techniques,” published by the Artech House Microwave Library, copyright (1984). 15. Solid State Physics, by Ashcroft and Mermin 16. Optical Radiation Detector, by Eustace L. Dereniak and Devon G. Crowe 17. “Gallium Arsenide Materials, Devices, and Circuits,” by M. J. Howes and D. V. Morgan (1985) 18. “Intersubband Transitions in Quantum Wells,” edited by H. C. Lin (2000) 19. Meimei Z Tidrow, “Materials Science and Engineering,” B47, pp. 45-51 (2000) 20. J. Y. Andersson, J. Appl. Phys. 78(10), 15, pp. 6298 (1995) 21. “The Physics of Quantum Well Infrared Photodetectors,” edited by K. K. Choi (1997) 22. H. C. Liu, Z. R. Wasilewski, and M. Buchanan, “Segregation of Si doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current–voltage characteristics of intersubband infrared detectors,” Appl. Phys. Lett. vol. 63, pp. 761–763 (1993) 23. Takashi Asano, Susumu Noda, and Katsuhiro Tomoda, Appl. Phys. Lett. 74, 10, pp. 1418. 24. H. F. Ghaemi, T. Thio, D. E. Grupp, T. W. Ebbesen, and H. J. Lezec, “Surface plasmons enhance optical transmission through subwavelength holes,” Phys. Rev. B. 58, 6779 (1998) 25. Hans Lochbihler, “Surface polaritions on gold-wire gratins,” Phys. Rev. B. 50, 7 (1994) 26. Choi, K. K. “Electromagnetic modeling of edge coupled quantum well infrared photodetectors.” Journal of Applied Physics 111.12 (2012): 124507. 27. Wei, Wu et al. ”A normal-incident quantum well infrared photodetector enhanced by surface plasmon resonance”. (2010) 28. S. Kalchmair, et al. “Photonic crystal slab quantum well infrared photodetector” (2011) 29. M.Z. Tidrow, et al “Grating coupled multicolor quantum well infrared photodetectors” (1995) 30. Wikipedia, “Evanescent Field” https://en.wikipedia.org/wiki/Evanescent_field 31. H.C. Liu, “H.C. Liu’s handouts” http://www.physique.univ-paris-diderot.fr/iqclsw/Presentation/HC_Liu_IQCLSW'10.pdf 32. Seigo Tarucha, Yoshiji Horikoshi and Hiroshi Okamoto, “Optical absorption characteristics of GaAs – AlGaAs multi-quantum-well heterostructure waveguides”, (1983) 33. R.W. Wood, “On a remarkable case of uneven distribution of light in a diffraction grating spectrum”. Philos. Mag. 4, 396–402 (1902) 34. T.W. Ebbesen, H.J. Lezec, H.F. Ghaemi, T. Thio, and P.A. Wolff, “Extraordinary optical transmission through sub-wavelength hole arrays”. Nature 391, 667 (1998) 35. Wook Jae Yoo, Kyoung Won Jang, Jeong Ki Seo, Jinsoo Moon, Ki-Tek Han, Jang-Yeon Park, Byung Gi Park and Bongsoo Lee, “Development of a 2-channel embedded infrared fiber-optic temperature sensor using silver halide optical fibers”, Sensors (2011) 36. “The Physics of Quantum Well Infrared Photodetectors”, edited by K. K. Choi (World Scientific Publisher, Singapore, 1997) 37. Wikipedia, “近紅外線影像技術” https://zh.wikipedia.org/wiki/%E8%BF%91%E7%B4%85%E5%A4%96%E7%B7%9A%E5%BD%B1%E5%83%8F%E6%8A%80%E8%A1%93 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49222 | - |
dc.description.abstract | 量子井光偵測器現時於紅外線波段中廣泛應用中,其中涵括了天文、醫療、建築、軍事、安全系統等領域。如何能最有效且最省能提高其吸收效率遂成為熱門之課題。吾人冀以光柵之系統大幅改善光柵之吸能效率,並著重於了解其蝕刻深度與吸收效率之相關性。並習察得蝕刻至底電極時有較高之響應率,以此為基底,引用原理分析解釋,並做進一步之討論。
光柵者,能使光繞射,藉以使其電場可大量垂直於基板表面,大幅增加光電流之產生。光繞射入光柵溝槽後,將產生表面消逝波,能大幅增加其於主動層處之吸收,並觀察蝕刻深度之深淺,以研究蝕刻深度及響應度之變化。 目前之結果,吾人發現蝕刻至底電極時有較佳響應,但其結果仍有向上空間,分析為應是表面電子復合率高及主動層過多被蝕刻所致。除此之外,吾人亦有探討蝕刻相同深度不同光柵週期時之響應度比較,得其結果為於光柵週期2.0微米時有最高之響應率,並究其原因分析探討之。 | zh_TW |
dc.description.abstract | The quantum-well infrared photodetector(QWIP) is widely applied in contemporary technology. It is mainly applied in the field of astronomy, medical science, architecture, military and safety system. Therefore, it became a popular topic on how to make the fabrication of QWIP costless and simultaneously promote its absorption efficiency. In this paper, we attempt to improve the absorption efficiency of QWIP by applying the grating structure. Also, the relation between the etched depth and absorption efficiency will be observed. Consequently, we learned that when the deeper the active layer is etched, the better responsivity is shown.
The grating structure can make the light diffract, meaning that the proportion of the electric field direction vertical to the substrate surface can be raised. By doing so, the photocurrent can be generated faster than the previous condition. While the light is diffracted into the grating slot, the evanescent wave will be generated, which can greatly enhance the absorption at the active layer. As for the present result, we observed the highest responsivity when the active layer is etched thoroughly. Yet there are still rooms for improvement. We deduced that it may be resulted from the higher surface recombination and excessively-etching of the active layer. Besides, we also investigated the responsivity under fixed etched depth and different grating pitch. The result shows that the optimal grating pitch is 2.0 micrometer. The detail reason will be discussed in the 4th chapter. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T11:19:51Z (GMT). No. of bitstreams: 1 ntu-105-R02943059-1.pdf: 2808193 bytes, checksum: 086eed7f6964d540b592df9edb80f796 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 口試委員會審定書…………………………………………………………………II
致謝…………………………………………………………………………………III 中文摘要……………………………………………………………………………VI 英文摘要……………………………………………………………………………VII 目錄…………………………………………………………………………………IX 圖目錄………………………………………………………………………………XI 表目錄………………………………………………………………………………XIII 第壹章 緒論………………………………………………………………………1 第貳章 紅外線光偵測器…………………………………………………………3 第一節 紅外線光偵測器之基本原理…………………………………3 第一項 光之波段與紅外線…………………………………3 第二項 黑體輻射……………………………………………4 第三項 紅外線光偵測器……………………………………5 第四項 漸逝波………………………………………………7 第二節 GaAs/AlxGa1-xAs之多層量子井結構…………………………8 第一項 內能帶躍遷…………………………………………8 第二項 光致電導之量子井紅外線偵測器…………………8 第三項 光致電壓之超晶格紅外線偵測器…………………10 第三節 光柵結構於量子井紅外線偵測器之改善……………………11 第一項 改良之目的即其方法………………………………11 第二項 光柵結構之能量分布模擬方法……………………16 第四節 儀器設置及特性量測…………………………………………18 第一項 FTIR之介紹…………………………………………18 第二項 相對光譜響應………………………………………19 第三項 絕對響應……………………………………………20 第四項 暗電流及光電流之量測……………………………22 第參章 元件之製作流程…………………………………………………………24 第一節 製程步驟………………………………………………………24 第一項 樣品清潔……………………………………………24 第二項 光學微影……………………………………………24 第三項 濕蝕刻………………………………………………25 第四項 金屬蒸鍍及離浮……………………………………25 第五項 快速熱退火…………………………………………26 第六項 鎊線…………………………………………………26 第二節 光柵圖型製作…………………………………………………26 第一項 電子束微影系統……………………………………26 第二項 電子束直寫…………………………………………27 第三項 電子束微影製程步驟………………………………28 第三節 元件製作………………………………………………………28 第一項 元件設計原理………………………………………28 第二項 光罩型式……………………………………………29 第三項 磊晶結構……………………………………………30 第四項 製作流程……………………………………………30 第五項 光柵圖型製程………………………………………34 第肆章 光柵結構於量子井紅外線偵測器之影響………………………………37 第一節 蝕刻深度之比較………………………………………………37 第一項 圖表呈現……………………………………………37 第二項 結果分析……………………………………………38 第二節 光柵週期之比較………………………………………………38 第一項 圖表呈現……………………………………………38 第二項 結果分析……………………………………………39 第三節 具體之改善措施………………………………………………40 第一項 蝕刻方式之改變……………………………………40 第二項 表面載子復合之改善………………………………41 第三項 邊緣耦合效應測試…………………………………41 第伍章 結論及未來展望…………………………………………………………42 參考資料……………………………………………………………………………43 | |
dc.language.iso | zh-TW | |
dc.title | 利用不同光柵結構探討漸逝波於量子井紅外光偵測器之影響 | zh_TW |
dc.title | Utilizing Different Grating Structures to Investigate the Influence of Evanescent Wave in Quantum Well Infrared Photodetector | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 孫建文(教授),孫允武,陳啟東,徐大正 | |
dc.subject.keyword | 消逝波,光柵結構,量子井紅外線光偵測器, | zh_TW |
dc.subject.keyword | evanescent wave,grating structure,quantum-well infrared photodetector,QWIP, | en |
dc.relation.page | 45 | |
dc.identifier.doi | 10.6342/NTU201603052 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-19 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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