請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49012
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 田維誠(Wei-Cheng Tian) | |
dc.contributor.author | Shing-Ting Lin | en |
dc.contributor.author | 林信廷 | zh_TW |
dc.date.accessioned | 2021-06-15T11:13:39Z | - |
dc.date.available | 2021-09-08 | |
dc.date.copyright | 2016-09-08 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-21 | |
dc.identifier.citation | [1] F. V. Hunt, Origins of Acoustics. New Haven, CT: Yale Univ. Press, 1978
[2] F. V. Hunt, Electroacoustics : The Analysis of Transduction, and Its Historical Background. New York: Acoustical Society of America, 1982. [3] S. W. Smith, H. G. Pavy, Jr., and O. T. von Ramm, “High-speed ultrasound volumetric imaging system—Part I: Transducer design and beam steering,” IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol. UFFC-38, pp. 100–108, Mar. 1991 [4] O. T. von Ramm, S. W. Smith, and H. G. Pavy, Jr., “Highspeed ultrasound volumetric imaging system—Part II: Parallel processing and image display,” IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol. UFFC-38, pp. 109–115, Mar. 1991. [5] M. A. Averkiou, D. N. Roundhill, and J. E. Powers, “A new imaging technique based on the nonlinear properties of tissues,” in Proc. IEEE Ultrason. Symp., pp. 1561–1566, 1997. [6] H. Jagannathan, G. G. Yaralioglu, A. S. Ergun, F. L. Degertekin,and B. T. Khuri-Yakub, “Micro-fluidic channels with integrated ultrasonic transducers,” in Proc. IEEE Ultrason. Symp., pp. 859–862, 2001. [7] F. L. Lizzi, M. Ostromogilsky, E. J. Feleppa, M. C. Rorke, and M. M. Yaremko, “Relationship of ultrasonic spectral parameters to features of tissue microstructure,” IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol. UFFC-33, pp. 319–329, May 1986. [8] G. Cincotti, G. Loi, and M. Pappalardo, “Frequency decomposition and compounding of ultrasound medical images with wavelet packets,” IEEE Trans. Med. Imag., vol. 20, pp. 764–771, Aug. 2001. [9] F. V. Hunt, Electroacoustics, 2nd ed. New York: American Institute of Physics, 1982. [10] Goksen et al, Capacitive Micromachined Ultrasonic Transducers: Theory and Technology, Journal of Aerospace Engineering, Volume 16, Issue 2 ,April 2003 [11] Baris Bayram,Calculation and measurement of electromechanical coupling coefficient of capacitive micromachined ultrasonic transducers, transactions on ultrasonics, ferroelectrics, and frequency control, vol. 50, no. 4, april 2003 [12] John D. Fraser and Paul Reynolds, Finite element method for determination of electromechanical coupling coefficient for piezoelectric and capacitive micromachined ultrasonic transducers, J. Acoust. Soc. Am. 108, 2599, 2000 [13] Arif S. Ergun; Goksen G. Yaralioglu; and Butrus T. Khuri-Yakub, Capacitive Micromachined Ultrasonic Transducers: Theory and Technology, J.Aerosp. Eng., 16(2):76-84, 2003 [14] 田鈺申, CMOS MEMS 低偏壓電容式超音波感測器開發, 2012 [15] 林芳伃 , CMOS-MEMS電容式微機電系統超音波換能器製作與開發, 2013 [16] Min-Chieh Ho, Mario Kupnik, Kwan Kyu Park and Butrus T. Khuri-Yakub, Long-term measurement results of pre-charged CMUTs with zero external bias operation, 2012 IEEE International Ultrasonics Symposium Proceedings, 2012 [17] S. Machida, S. Migitaka, H. Tanaka, K. Hashiba, H. Enomoto, Y. Tadaki, and T. Kobayashi, Analysis of the Charging Problem in Capacitive Micro-machined Ultrasonic Transducers, 2008 IEEE International Ultrasonics Symposium Proceedings, 2008 [18] Satoshi Itoh, Fermi surfaces of tungsten silicide alloys, J. Phys.: Condens. Matter 2 3747-3758. Printed in the UK, 1990 [19] H. Fowle, J. E. Devaney, J. G. Hagedon, Growth Model for Filamentary Streamers in an Ambient Field,IEEE Dielectrics and Electrical Insulation Society 10 73-79. 2003 [20] H. M. Gupta and R. J. Van Overstraeten, Role of trap states in the insulator region for MIM characteristics, Journal of Applied Physics 46, 2675 ,1975 [21] Mau Phon Houng, Yeong Her Wang, and Wai Jyh Chang, Current transport mechanism in trapped oxides: A generalized trap-assisted tunneling model, Journal of Applied Physics 86, 1488, 1999 [22] Simon Tam , Ping-Keung Ko, Chenming Hu, Lucky-electron model of channel hot-electron injection in MOSFET'S, IEEE Transactions on Electron Devices (Volume:31 , Issue: 9 ), 2005 [23] Hector M. Garcia-Garcia 1, Marco A. Costa 2, and Patrick W. Serruys 1*, European Heart Journal 3, 2456–2469, Imaging of coronary atherosclerosis: intravascular ultrasound, 2010 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49012 | - |
dc.description.abstract | 根據CMUT (電容式微機電超音波換能器Capacitive Micromachined Ultrasond Transduser) 運作的理論,在實際操作時,CMUT需要加上接近崩潰電壓的直流偏壓,使薄膜緊繃,儀器才能到達較高的靈敏度。但是本實驗室製作的CMOS based 低崩潰電壓 CMUT在過去的實際操作上,就算沒有偏壓到接近崩潰電壓,甚至是沒有添加任何偏壓,只接受AC訊號造成震盪,也能正常進行訊號的收發。
過去本團隊在論文中推論,這是CMUT因為長期使用所造成的電荷累積,導致元件中形成內建電廠,所以不用外加任何偏壓也能有效的進行訊號的收發。在其他人的論文中也有提出簡化的經驗模型,用來描述CMUT內建電場的現象,甚至有設計後端的回饋電路,讓CMUT即使在內建電廠產生崩潰電壓偏移時,晶片也會提供額外電壓進行補償。然而,諸多論文中對於電荷累積的機制往往停留在經驗法則,或是只考慮高電場下的Fowler–Nordheim tunneling,對於本實驗室製作的低崩潰電壓CMUT而言,這些解釋都無法恰當的描述CMUT在低電場(<4MV/cm)下的電荷累積。 本研究藉由MIM (Metal-Insulator-Metal)理論,以及數種發生在低偏壓下的電流穿隧與電荷累積模型,以及量測CMUT的I-V特徵曲線變化,試圖用穿隧電流的先後變化來解釋CMUT中內建電荷累積的現象,也期望在了解電荷累積的機制後,能有助於以後後端電路的設計與應用。 本研究利用TSMC 0.35μm 2P4M CMOS-MEMS製程製作電容式微機電超音波換能器。第一部分著力於元件結構的設計、製程的製作,與良率的改善。第二部分則著重於電荷累積模型的建立,測量其電流-電壓之特徵曲線變化,並驗證自發自收操作之可行性。 | zh_TW |
dc.description.abstract | According to the fundamental principle of CMUT (Capacitive Micromachined Ultrasound), DC bias must be applied on CMUT for better energy transfer efficiency. In 2013, our team fabricated low collapse voltage CMUTs device and found out its sensitivity was larger than expected. Even without applied DC bias, the CMUTs could receive pulse-echo signal with acceptable sensitivity.
Our team deduced there was charges accumulated in CMUTs device. Thus, the build-in electric field enhanced the performance of the CMUTs device. There are also empirical model of CMUT charge injection in other teams’ research. However, all those researches lacks the explanation of the charging mechanism, or they only discuss charge injection via Fowler-Nordheim tunneling in high voltage region. Most charging models cannot explain the charging effect in our CMUTs which were operated under relatively low gate voltage. Based on the theory of MIM (Metal-Insulator-Metal), we strive to build a more all-around CMUTs charging model under various bias. And we analyze the I-V characteristic change of the CMUTs device to verify our charging model. Our research utilizes low collapse voltage CMUTs fabricated by TSMC CMOS 0.35 process and etching post-process. The former part focused on the fabrication of CMUTs and the yield rate improvements. The latter part focused on the modeling of CMUT charging effect, the analysis of I-V characteristic and the verification of pulse-echo operation of the pre-charged CMUTs. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T11:13:39Z (GMT). No. of bitstreams: 1 ntu-105-R03943072-1.pdf: 2900226 bytes, checksum: 431deeed41a970758f5185533b95c226 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES x Chapter 1 緒論與研究動機 1 1.1 CMUT 架構 3 1.1.1 工作原理 3 1.2 論文回顧 9 1.2.1 CMOS MEMS 低偏壓電容式超音波感測器開發 9 1.2.2 CMOS-MEMS電容式微機電系統超音波換能器製作與開發 10 1.2.3 電荷注入的CMUTs在零偏壓下長期操作的電性變化 11 1.2.4 用C-V 特徵曲線分析CMUT內部的電荷累積 12 1.3 研究動機 13 Chapter 2 CMOS之CMUT設計製程改良以及封裝 15 2.1 設計及模擬 16 2.2 後製程步驟 19 2.2.1 後製程結果 21 2.2.2 濕蝕刻步驟 22 2.2.3 良率問題以及關鍵步驟 23 2.2.4 雷射切割製程與打線封裝 25 2.2.5 Parylene-C沉積封膜 26 Chapter 3 CMOS CMUT-電性測量與分析 27 3.1 電流穿隧模型與討論 27 3.1.1 常見電流穿隧模型 28 3.1.2 內建電場假說 31 3.1.3 CMUT在不同操作電壓下的電流穿隧理論模型 32 3.2 量測結果與討論 39 3.2.1 實驗儀器架設 39 3.2.2 量測流程 40 3.2.3 CMUT在施加多次脈衝後的電性特性變化 41 3.2.4 CMUT內部電荷累積分析 45 3.2.5 離子汙染 48 Chapter 4 量測方法與CMUT探頭測試成果 50 4.1 量測架設介紹 50 4.2 聲場量測 51 4.3 零偏壓自發自收(pulse-echo)能力測試 52 4.4 軟管內自發自收能力測試 53 Chapter 5 結論以及未來展望 56 5.1 IVUS未來應用 57 5.2 結論 58 REFERENCE 59 | |
dc.language.iso | zh-TW | |
dc.title | 互補式金氧半微機電技術零偏壓電容式微型超音波換能器元件理論開發及其應用 | zh_TW |
dc.title | Theory and Application of Zero Bias CMOS MEMS Capacitive
Micromachined Ultrasound Transducer | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 呂家榮(Chia-Jung Lu),沈弘俊(Horn-Jiunn Sheen),呂學士(Shey-Shi Lu) | |
dc.subject.keyword | CMUT,CMOS MEMS,超音波感測器,零偏壓操作,電荷注入, | zh_TW |
dc.subject.keyword | CMUT,CMOS MEMS,Ultrasound Transducer,Zero-Bias,Charging Effect, | en |
dc.relation.page | 61 | |
dc.identifier.doi | 10.6342/NTU201602910 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-21 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-105-1.pdf 目前未授權公開取用 | 2.83 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。