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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48753完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃天偉(Tian-Wei Huang) | |
| dc.contributor.author | JUITE CHIEN | en |
| dc.contributor.author | 簡瑞德 | zh_TW |
| dc.date.accessioned | 2021-06-15T07:12:07Z | - |
| dc.date.available | 2020-09-21 | |
| dc.date.copyright | 2010-10-05 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-09-25 | |
| dc.identifier.citation | [1] J. Gorisse, A. Cathelin, A. Kaiser, and E. Kerhervc, 'A 60GHz CMOS RMS power detector for antenna impedance mismatch detection', IEEE NEWCAS, pp. 93~96, June 2008.
[2] U. R. Pfeiffer and D. Goren, 'A 20dBm Fully-Integrated 60GHz SiGe Power Amplifier with Automatic Level Control', IEEE Journal of Solid-State Circuits, vol. 42, iss. 7, pp 1455-1463, July 2007 [3] R. G. Meyer, “Low-power monolithic RF peak detector analysis,” IEEE J. Solid-State Circuits, vol. 30, no. 1, pp. 65–67, Jan. 1995. [4] Y. Zhou and C. Y. W. Michael, “A wide band CMOS RF power detector,” in Proc. IEEE Int. Circuits Syst. Symp., May 2006, pp. 4228–4231. [5] Y. Zhou and M. Y.-W. Chia,“A low-power ultra-wideband CMOS true RMS power detector,” IEEE Trans. Micro. Theory Tech., vol. 56, no.5, pp. 1052-1058, May 2008. [6] Yen-chih Huang, Hsieh-Hung Hsieh, Liang Lu ,“A Build-in Self-Test Technique for RF Low-Noise Amplifiers,” IEEE Trans. Micro. Theory Tech., vol. 56, no.5, pp. 1035-1042, May 2008. [7] P. E. Allen and D. R. Holberg, CMOS Analog Circuit Design, 2nd ed. Oxford, U.K.: Oxford Univ. Press, 2002. [8] Bahl, I.J. , 'Application notes - Broadband Power Detectors ,' IEEE Microwave Magazine , June 2007 , pp.82-86. [9] S. Ho, “A 450 MHz CMOS RF power detector,” in IEEE RFIC Symp. Dig., May 2001, pp. 209–212. [10] G. Ferrari et al., “CMOS fully compatible microwave detector based on MOSFET operating in resistive regime,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 445–447, Jul. 2005. [11] M. Bohsali et.al., “Current Combining 60GHz COMS Power Amplifiers, ”IEEE Radio Frequency Integrated Circuit Symposium,june 2009 [12] J. L. Kuo et.al., 'A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology,' IEEE Microwave and Wireless Components Letters, vol. 19, pp. 45-47, 2009. [13] Yung-Nien Jen et.al, “A V-band Fully-Integrated CMOS Distributed Active Transformer Power Amplifier for 802.15.TG3c Wireless Personal Area Network Applications,”IEEE Compound Semiconductor IC Symposium, Aug. 2008, Invited paper. [14] Ullrich R. Pfeiffer, and David Goren,”A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology,”IEEE Trans. on Microwave Theory and Techniques, VOL. 55, NO. 5, MAY 2007, pp. 857-865. [15] W. L. Chan,et. al., 'A 60GHz-Band 1V 11.5dBm Power Amplifier with 11% PAE in 65nm CMOS,' IEEE Int. Solid-State Circuits Conference Dig. Tech. Papers., Feb. 2009, pp. 380-381. [16] Tim LaRocca, and Mau-Chung Frank Chang,“60GHz CMOS Differential and Transformer-Coupled Power Amplifier for Compact Design,” IEEE Radio Frequency Integrated Circuits Symposium, June 2008. [17] Chi Y Law, et. al,“A High-Gain 60GHz Power Amplifier with 20dBm Output Power in 90nm CMOS,'in IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb.2010, pp.424-427. [18] Jeon, W.; Melngailis, J. ,“CMOS foundry Schottky diode microwave power detector fabrication, Spice modeling, and application ,” Silicon Monolithic Integrated Circuits in RF Systems , pp. 4, Jan 2005 [19] Townsend, K.A.; Haslett, J.W.; Nielsen, J. ,“A CMOS Integrated Power Detector for UWB,” IEEE International Symposium on Circuits and Systems , pp. 3039–3042, May 2007 [20] kenneth A. T and James W. H,“A Wideband Power Detection System Optimized for the UWB Spectrum,” IEEE J. Solid-State Circuits, vol. 44, no. 2, pp. 371–381, Feb. 2009 [21] Gerfault, B.; Gordara, B. ,“Novel methodology for choosing detectors for the Automatic Level Control of high power amplifiers,” 3rd International conference on Anti-counterfeiting, Security, and Identification in Communication , 2009 [22] B.-W. Min and G.-M. Rebeiz, “Single-Ended and Differential Ka-Band BiCMOS Phased Array Front-Ends” IEEE J. Solid-State Circuits, vol. 43, pp. 2239-2250, no. 10, Oct. 2008. [23] A. Natarajan, A. Komijani, and A. Hajimiri, “A Fully Integrated 24-GHz Phased-Array Transmitter in CMOS,” IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2502-2514, Dec 2005. [24] H. Hashemi, X. Guan, A. Komijani, and A. Hajimiri, “A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 614-626, Feb. 2005. [25] F. Ellinger, U. Jörges, U. Mayer, and R. Eickhoff, “Analysis and Compensation of Phase Variations Versus Gain in Amplifiers Verified by SiGe HBT Cascode RFIC,” IEEE Trans. Microw. Theory Tech., vol. 57, no. 8, pp. 1885-1894, Aug. 2009. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48753 | - |
| dc.description.abstract | 本論文研究方向是著重於研究V頻段的自動功率控制迴授式功率放大器，其中包含了功率放大器、功率偵測器、比較器、和衰減器。這個電路以90奈米互補式金氧半場效電晶體(CMOS)製程實現。
隨著無線通信系統的快速發展，微波頻帶已趨近於飽和，為了能有更寬的頻譜來達成更快的傳輸速率，寬頻的毫米波無線通信系統將被需要。相位陣列系統可以提供高指向性，它的高陣列增益也可增加信號雜訊比，在相位陣列運作時，改變相位時將會伴隨的不同損耗，而自動功率控制迴授式功率放大器迴圈將可以自動的補償振幅。 論文的第一部分在討論功率偵測器設計，包含振幅偵測器和對數放大器，這樣的架構可以使功率偵測器的輸出對於輸入功率呈現線性關係。此功率偵測器的直流功耗為4.8毫瓦，可偵測的線性範圍從-20dBm~-2dBm，而穩定時間最快則達到5奈秒。 論文的第二部分為功率放大器和自動功率控制迴路的討論，功率放大器在輸入端加上一個衰減器來控制增益，使用四級串接(cascade)的共源級放大器來得到高增益，此功率放大器的增益為17dB、輸出功率(P1dB)為10.5dBm、輸出飽和功率為12dBm，在輸出功率(P1dB)時功率輔助效益(PAE)為9.7%，最高為12.2%。而衰減器可提供自動功率控制迴授式功率放大器4dB的使用範圍。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-15T07:12:07Z (GMT). No. of bitstreams: 1 ntu-99-R97942084-1.pdf: 2262164 bytes, checksum: fc407b05afb73e355d67b8e11a566e87 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS v LIST OF FIGURES vii LIST OF TABLES x Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Contributions 3 1.3 Thesis Overview 3 Chapter 2 Fundamentals of Power Amplifier and Power Detector 5 2.1 Power Amplifier in MMW Communication Systems 5 2.1.1 Classification of Power Amplifiers 5 2.1.2 Switching Amplifier Modes 8 2.2 Power detector 9 2.2.1 Classification of Power Detectors 9 2.2.2 Applications of Power detector 10 Chapter 3 60 GHz Power Detector 12 3.1 Overview 12 3.2 Circuit Process Basics 12 3.3 Power Detector Design 12 3.3.1 Amplitude Detector 12 3.3.2 Logarithmic Amplifier 18 3.3.3 Power detector with Linear-in-dB output 20 3.3.4 Simulation Results 24 Chapter 4 60 GHz power amplifier and ALC loop 28 4.1 Introduction 28 4.1.1 Circuit Design 28 4.1.2 Simulation Results 37 4.2 ALC Architecture 41 4.2.1 Building Blocks 41 4.2.2 Simulation Results 43 4.2.3 Measurement Results 47 Chapter 5 Conclusion 56 REFERENCE 57 | |
| dc.language.iso | en | |
| dc.title | 60 GHz互補式金氧半導體自動功率控制功率放大器之研製 | zh_TW |
| dc.title | Design and Analysis of 60 GHz CMOS Automatic Level Control (ALC) Power Amplifier | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 蔡政翰(Jeng-Han Tsai),張鴻埜(Hong-Yeh Chang) | |
| dc.subject.keyword | 功率放大器,功率偵測器,衰減器,和分貝值線性,自動增益控制,自動功率控制,V頻段,互補式金氧半場效電晶體(CMOS), | zh_TW |
| dc.subject.keyword | power amplifier (PA),power detector,linear-in-dB,attenuator,automatic level control (ALC),automatic gain control (AGC),V-band,CMOS, | en |
| dc.relation.page | 60 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-09-27 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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| ntu-99-1.pdf 目前未授權公開取用 | 2.21 MB | Adobe PDF |
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