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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48279完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林坤佑(Kun-You Lin) | |
| dc.contributor.author | Guan-Jie Huang | en |
| dc.contributor.author | 黃冠傑 | zh_TW |
| dc.date.accessioned | 2021-06-15T06:51:06Z | - |
| dc.date.available | 2014-02-20 | |
| dc.date.copyright | 2011-02-20 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-02-15 | |
| dc.identifier.citation | [1] “Revision of Part 15 of the Commission’s Rules Regarding Ultra-Wideband Transmission Systems,” FCC, Washington, DC, ET Docket 98-153, Feb 14. 2002.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48279 | - |
| dc.description.abstract | 隨著通訊技術和晶片研製技術的演進，無線傳輸、高速傳輸成為發展的趨勢，24 GHz頻段汽車防撞雷達系統具備成本低廉、可全天候使用的優點。另一方面，由於60 GHz頻段是用於無線個人區域網路(WPAN)的免授權頻段，具備安全、有效率之短距傳輸功能，因而成為發展的重心。
在本論文中，我們設計並實現了一個利用互補式金氧半場效電晶體設計之K頻段之增益提高低雜訊放大器與一個利用高速電子遷移率電晶體設計之V頻段之疊接組態平衡式功率放大器。此論文分成三個部分，第一部分介紹了低雜訊放大器的基本原理。 第二部分設計並實現K頻段之增益提高低雜訊放大器。在無線通訊接收前端電路中，低雜訊放大器將天線接收到的微弱訊號以最低的雜訊貢獻加以放大。此放大器是使用0.18-μm CMOS製程製作，使用薄膜微帶線(Thin-film microstrip lines, TFMS lines)與集總(Lumped)元件進行匹配。此電路的量測結果與模擬結果相差較大。在24 GHz，達到增益為13.8 dB、雜訊指數為6.0 dB，消耗11.9 mW功率，晶片面積為0.36平方毫米。由於量測與模擬有較大的差異，本論文將修正模擬錯誤的部分並予以重新設計。 第三部分設計並實現V頻段的平衡式疊接組態功率放大器，在無線通訊接收前端電路中，功率放大器將訊號以高功率傳送至天線，並將訊號發射出去。此放大器是使用0.15-μm GaAs pHEMT的製程製作，因為在V頻段製作疊接組態放大器會有很嚴重的振盪的問題，使用共面波導傳輸線取代一般的微帶線以進行匹配，可防止一些在使用微帶線製作時才會產生的寄生效應，並且改善佈局方法，再度減少寄生效應，使得電路更趨於穩定。在V頻段，達到最高之增益為10.8-dB、最高輸出功率為23.4 dBm，消耗1542 mW功率，晶片面積為4平方毫米。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-15T06:51:06Z (GMT). No. of bitstreams: 1 ntu-100-R97942070-1.pdf: 11933986 bytes, checksum: 8fdd94cbce6e29f2d9c519bb3ef1b307 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 2 中文摘要 4 ABSTRACT 6 CONTENTS i LIST OF FIGURES iv LIST OF TABLES xii Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 3 1.2.1 K-band low noise amplifier 3 1.2.2 V-band power amplifier 4 1.3 Contributions 5 1.4 Thesis Organization 6 Chapter 2 Fundamentals of Low Noise Amplifier 7 2.1 Introduction 7 2.2 Gain [40] 7 2.3 Noise 11 Chapter 3 A 22-29 GHz Gain Boosting Low Noise Amplifier 15 3.1 Introduction 15 3.2 LNA Topologies 18 3.2.1 Introduction 18 3.2.2 Topology comparison 19 3.3 Circuit Design 34 3.3.1 Device selection 35 3.3.2 Comparison of common-source, cascode, and gain-boosting configurations 58 3.3.3 Matching network of cross connection of transistors 65 3.3.4 Matching network of the gain boosting LNA 68 3.3.5 Design of bypass capacitors and DC block capacitors 69 3.4 Simulation Results 77 3.4.1 Small-Signal S-Parameter, Noise Figure and Stability Factor 78 3.4.2 Power performance 80 3.4.3 Inter-stage stability analysis 82 3.4.4 Intersection stability 84 3.4.5 Feedback loop stability 85 3.4.6 Layout 86 3.5 Measurement Results 87 3.6 Discussion and Summary 94 3.6.1 Debug 94 3.6.2 Redesign 98 3.6.3 Summary 105 Chapter 4 A V-band Cascode Balance Power Amplifier Using 0.15-μm GaAs pHEMT Process 107 4.1 GCPW Transmission Line in 0.15-μm GaAs pHEMT Process 109 4.2 Circuit Design 113 4.2.1 Device selection 114 4.2.2 Improvement of stability 122 4.3 Simulation Results 148 4.4 Measurement Results 155 4.4.1 S-parameters 156 4.4.2 Power performance 159 4.5 Summary 163 Chapter 5 Conclusions 165 REFERENCE 166 | |
| dc.language.iso | en | |
| dc.subject | 功率放大器 | zh_TW |
| dc.subject | 無線個人區域網路(WPAN) | zh_TW |
| dc.subject | 金氧半場效電晶體 | zh_TW |
| dc.subject | 高速電子遷移率電晶體 | zh_TW |
| dc.subject | 低雜訊放大器 | zh_TW |
| dc.subject | power amplifier | en |
| dc.subject | Wireless personal area network (WPAN) | en |
| dc.subject | CMOS | en |
| dc.subject | HEMT | en |
| dc.subject | low noise amplifier | en |
| dc.title | 互補式金氧半場效電晶體K頻段增益提高低雜訊放大器與高速電子遷移率電晶體V頻段疊接組態平衡式功率放大器之研製 | zh_TW |
| dc.title | Design of K-Band CMOS Gain Boosting Low Noise Amplifier and V-Band GaAs pHEMT Cascode Balance Power Amplifier | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張鴻埜(Hong-Yeh Chang),馬自莊(Tzyh-Ghuang Ma),蔡政翰(Jeng-Han Tsai),蔡作敏(Zuo-Min Tsai) | |
| dc.subject.keyword | 無線個人區域網路(WPAN),金氧半場效電晶體,高速電子遷移率電晶體,低雜訊放大器,功率放大器, | zh_TW |
| dc.subject.keyword | Wireless personal area network (WPAN),CMOS,HEMT,low noise amplifier,power amplifier, | en |
| dc.relation.page | 171 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-02-15 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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