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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47319完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林坤佑(Kun-You Lin) | |
| dc.contributor.author | Tzung-Chuen Tsai | en |
| dc.contributor.author | 蔡宗錞 | zh_TW |
| dc.date.accessioned | 2021-06-15T05:54:50Z | - |
| dc.date.available | 2012-08-22 | |
| dc.date.copyright | 2011-08-22 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-19 | |
| dc.identifier.citation | [1] “Revision of Part 15 of the Commission’s Rules Regarding Ultra-wideband Transmission Systems,” FCC, Washington, DC, ET Docket 98-153, Feb 14, 2002.
[2] “Federal spectrum use summary 30 MHz - 3000 GHz,” FCC, National Telecommunications and Information Administration Office of Spectrum Management, June 21, 2010. [3] S. C. Cripps, RF Power Amplifier for Wireless Communications. Boston, MA: Artech House, 1999. [4] J. C. Pedro and N. B. Carvalho, Intermodulation Distortion in Microwave and Wireless Circuits. Norwood, MA: Artech House, 2003. [5] X. Zhang, L. E. Larson, and P. M. Asbeck, Design of Linear RF Outphasing Power Amplifiers. Artech House, 2003. [6] C. Hsia, D. F. Kimball, and P. M. Asbeck, “Effect of maximum power supply voltage on envelope tracking power amplifiers using GaN HEMTs,” IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, Mar. 2011, pp. 69-72. [7] C. L. Chen, C. L. Keast, “X-band fully deleted SOI amplifier with adaptive bias control”, IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 451-453, July 2005. [8] Y. S. Eo, K. D. Lee, “High efficiency 5 GHz CMOS power amplifier with adaptive bias control circuit”, in IEEE RFIC Symp. Dig., June 2004, pp. 575-578. [9] Y.-J. E. Chen, D. Heo, “A high-efficiency CMOS RF power amplifier with automatic adaptive bias control”, IEEE Microw. Wireless Compon. Lett., vol. 16, no. 11, pp. 615-617, Nov. 2006. [10] N.-C. Kuo, J.-C. Kao, C.-C. Kuo, and H. Wang, “K-band CMOS power amplifier with adaptive bias for enhancement in back-off efficiency,” in IEEE MTT-S Int. Microw. Symp. Dig., June 2011. [11] H. Portela, V. Subramanian, and G. Boeck, “Fully integrated high efficiency K-band PA in 0.18-μm CMOS technology,” in Proc. Microwave and Optical Conference, Nov. 2009, pp. 393-396. [12] P.-C. Huang, J.-L. Kuo, Z.-M. Tsai, K.-Y. Lin, and H. Wang, “A 22-dBm 24-GHz power amplifier using 0.18-μm CMOS technology,” in IEEE MTT-S Int. Microw. Symp. Dig., May 2010, pp. 248-251. [13] J.-L. Kuo, Z.-M. Tsai, H. Wang, “A 19.1-dBm fully-integrated 24 GHz power amplifier using 0.18-μm CMOS technology,” in European Microwave Conf., Oct. 2008, pp. 1425-1428. [14] J.-W. Lee and S.-M. Heo, “A 27 GHz, 14 dBm CMOS power amplifier using 0.18 μm common-source MOSFETs,” IEEE Microwave and Wireless Components Letters, vol. 18, pp. 755-757, Nov. 2008. [15] Y.-N. Jen, J.-H. Tsai, C.-T. Peng, T.-W. Huang, “A 20 to 24 GHz +16.8 dBm fully integrated power amplifier using 0.18-μm CMOS process,” IEEE Microwave and Wireless Components Letters, vol. 19, no. 1, pp. 42-44, Jan. 2009. [16] C.-C. Hung, J.-L. Kuo, K.-Y. Lin, and H. Wang, “A 22.5-dB gain, 20.1-dBm output power K-band power amplifier in 0.18-μm CMOS,” in IEEE RFIC Symp. Dig., June 2010, pp. 557-560. [17] A. Komijani, A. Natarajan, A. Hajimiri, “A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS,” IEEE J. Solid-State Circuits, vol. 40, no. 9, pp. 1901-1908, Sep. 2005. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47319 | - |
| dc.description.abstract | 這篇論文題出一個可以使用在K頻段的自動調整偏壓技術，它可以改善互補式金氧半導體功率放大器在小於1-dB壓縮點時的效率。這個自動調整偏壓電路使用一個N型金氧半導體電晶體當作一個會隨著輸入功率而自動可變的電阻，並藉此可變電阻來控制共源級放大器的閘極偏壓。文中分析了此電路的操作原理及細節，並與已發表的其他自動調整偏壓技術做比較。也分析此自動調整偏壓電路的特性來對功率放大器做最佳化的設計。此外，它的使用限制及可調範圍也在此論文中提及。
我們使用180奈米互補式金氧半導體來製作一個使用自動調整偏壓技術在K頻段的兩級放大器。量測的結果，此功率放大器在靜態只有58.6毫瓦的功耗，而在1-dB壓縮點前6 dB的操作點有8.7%的功率附加效率。並且，其具有9 dB的小訊號增益、15.8 dBm的飽和輸出功率以及在1 dB 壓縮點有13.9 dBm的輸出功率和14%的功率附加效率。這是在所有發表過的電路中，使用180奈米互補式金氧半導體製程在1-dB壓縮點前6 dB的操作點有最高附加效率的K頻段功率放大器。 | zh_TW |
| dc.description.abstract | In this thesis, a new adaptive-bias technique is proposed to enhance the back-off efficiency of the K-band CMOS power amplifiers. This technique uses a transistor to be a variable resistor which is automatically adjusted by the input power. The operation detail of the adaptive-bias circuit is investigated, and the comparison of this new technique and the other previously reported adaptive-bias techniques is provided. The characteristics of the adaptive-bias circuit are analyzed and are optimized for the performance of power amplifiers. Besides, the limitation and the adjustable range of this adaptive-bias technique are also mentioned in the analysis.
A K-band power amplifier with the proposed adaptive-bias technique is fabricated in 0.18-um CMOS technology. According to the measurement, the proposed PA only consumes 58.6 mW at quiescent state and has 8.7% at the power of 6-dB back-off from P1dB. Compared with the fixed-bias Class-A PA that consumes 90 mW at quiescent state, the proposed PA saves 35% power consumption. The power-added-efficiency at OP1dB is 14% while maintaining 9-dB small-signal gain, 13.9-dBm OP1dB and 15.8-dBm Psat. It is the highest efficiency at the power of 6-dB back-off from P1dB among the reported 0.18-um CMOS power amplifiers above 20 GHz. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T05:54:50Z (GMT). No. of bitstreams: 1 ntu-100-R98942088-1.pdf: 1924674 bytes, checksum: ac649b2d66a9d20d91a9771dfd672e5c (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES xiv Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 1 1.3 Contributions 3 1.4 Thesis Organization 3 Chapter 2 Overview of Power Amplifier 5 2.1 Introduction 5 2.2 Important Parameters 5 2.2.1 Power 6 2.2.2 Efficiency 7 2.2.3 Linearity 8 2.3 Classification of Power Amplifier 15 2.4 Back-off Efficiency of Power Amplifier 19 2.4.1 Techniques for Enhancing Back-off Efficiency 19 Chapter 3 Adaptive-Bias Power Amplifiers 23 3.1 Adaptive Resistance for Adaptive Bias 23 3.1.1 Architectures 23 3.1.2 Operation Principle 25 3.1.3 Operation Detail 30 3.2 Characteristic of Adaptive-Bias Circuit 38 3.2.1 Adjustable Region of Bias 38 3.2.2 Impedance of Adaptive Bias 42 3.2.3 Loss of Adaptive Bias 49 3.2.4 Speed of Adaptive Bias 51 3.2.5 Limitation of Adaptive Bias 56 3.3 Other Considerations for Power Amplifier 59 3.3.1 AM-AM Performance 59 3.3.2 Node for Power Detecting 59 3.3.3 Noise 60 3.4 Summary 60 Chapter 4 A K-Band Power Amplifier Using Adaptive-Bias Technique 62 4.1 Introduction 62 4.1.1 Motivation 62 4.1.2 Objective 63 4.1.3 Design Flow 63 4.2 Design of Two-Stage Power Amplifier Using Adaptive-Bias Technique 65 4.2.1 Device Selection for Power Stage 65 4.2.2 Power-Stage Amplifier 71 4.2.3 Adaptive-Bias Circuit for Power-Stage Amplifier 75 4.2.4 Power Budget Calculation 89 4.2.5 Gain-Stage Amplifier 90 4.2.6 Adaptive-Bias Circuit for Gain-Stage Amplifier 92 4.2.7 Two-Stage Power Amplifier 94 4.3 Simulation Results 96 4.3.1 Small-Signal Simulation 96 4.3.2 Large-Signal Simulation 97 4.3.3 Simulation for Different Temperature 101 4.3.4 IMD3 102 4.4 Measurement Results 104 4.4.1 Small-Signal Measurement 104 4.4.2 Large-Signal Measurement 107 4.4.3 Adaptive-Bias Effect Measurement 113 4.4.4 IMD3 117 4.4.5 ACPR & EVM 117 4.5 Debug and Discussion 133 4.6 Summary 136 Chapter 5 Conclusions 139 REFERENCE 140 | |
| dc.language.iso | en | |
| dc.subject | 功率放大器 | zh_TW |
| dc.subject | 24 GHz | zh_TW |
| dc.subject | K頻段 | zh_TW |
| dc.subject | 自動可調技術 | zh_TW |
| dc.subject | 高功率附加效率 | zh_TW |
| dc.subject | Adaptive-Bias Technique | en |
| dc.subject | Power Amplifier | en |
| dc.subject | PA | en |
| dc.subject | Back-Off Efficiency | en |
| dc.subject | 24 GHz | en |
| dc.subject | K-band | en |
| dc.title | K頻段互補式金氧半導體功率放大器之自動調整偏壓技術研究 | zh_TW |
| dc.title | Research on Adaptive-Bias Technique for K-Band CMOS Power Amplifier | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王暉(Huei Wang),張鴻埜(Hong-Yeh Chang),蔡政翰(Jeng-Han Tsai),蔡作敏(Zuo-Min Tsai) | |
| dc.subject.keyword | 功率放大器,24 GHz,K頻段,自動可調技術,高功率附加效率, | zh_TW |
| dc.subject.keyword | Power Amplifier,PA,Back-Off Efficiency,24 GHz,K-band,Adaptive-Bias Technique, | en |
| dc.relation.page | 141 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-08-19 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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| ntu-100-1.pdf 未授權公開取用 | 1.88 MB | Adobe PDF |
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