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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任(Yuh-Renn Wu) | |
| dc.contributor.author | Po-Yuan Dang | en |
| dc.contributor.author | 鄧博元 | zh_TW |
| dc.date.accessioned | 2021-06-15T05:43:30Z | - |
| dc.date.available | 2011-08-20 | |
| dc.date.copyright | 2010-08-20 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-08-20 | |
| dc.identifier.citation | [1] J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures. Cambridege, 2007.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46930 | - |
| dc.description.abstract | 在本篇論文中，我們探討了極性'c'平面氮化銦鎵/氮化鋁銦量子井在拉伸應變下的發光及極化特性。並深入討論不同合金含量、井寬以及注入載子濃度的影響。
我們利用了帕松、薛丁格方程以及k·p法來求解量子井中的位能以及電子電洞在量子井中的分佈，並且採用疊代的方法來求出這些方程在此系統中的解，進而求得此系統量子井的自發性輻射、發光極化率、及光增益。我們發現此系統之量子井在拉伸應變下，激發光有極化特性並且為橫磁極化光。經由計算模擬結果我們也發現，量子井在受到拉伸應變以及位障中特定的鋁濃度下，因為材料接面處的等效極化電荷趨近為零，所以可以有效抑制史坦克效應並且增加電子和電洞波函數復合的機率來提升發光效率。研究中更進一步發現相較於ㄧ般氮化銦鎵/氮化鎵量子井，在拉伸應變之氮化銦鎵/氮化鋁銦量子井中的光增益大量提升且有較低的臨界載子密度。我們的研究指出拉伸應變之氮化銦鎵/氮化鋁銦量子井具有潛力應用在奈米柱光子晶體結構的橫磁模態邊射型雷射。 | zh_TW |
| dc.description.abstract | In this thesis, we study the optical characteristics and polarization anisotropy of the tensile strained polar c-plane InGaN/AlInN quantum wells with zero internal polarization field. The influence of different alloy compositions of the quantum well and barrier, quantum well widths, and injection carrier densities are discussed in detail. The developed self-consistent Poisson and 6x6 k·p Schrodinger solver has been use for studying the band structure and light emitting characteristics. We find that if the quantum well is under the tensile strain, the |Z>-like state will be lifted up, the topmost subband of valence band is dominated by the |Z> state. Therefore, the emitted light will be mainly z-polarized (TM mode). In addition, with a particular aluminum composition of the AlInN alloy as the barrier for the tensile strained InGaN quantum well, it is possible to reduce quantum-confined Stark effect and improve the spontaneous emission rate. Our results show that the tensile strained InGaN quantum well on AlInN barrier has much larger optical gain and lower threshold carrier density compared to the conventional InGaN/GaN system. The tensile strained InGaN/AlInN quantum wells have a potential to be the TM mode light source for edge emitting laser diodes with the photonic crystal cavity made by nanorod arrays. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T05:43:30Z (GMT). No. of bitstreams: 1 ntu-99-R97941108-1.pdf: 5119232 bytes, checksum: 7dc9f0a25bd45fb8f65a29b2c94b72ab (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | 口試委員會審查表 . . . . . . . . i
誌謝 . . . . . . . . . . . . . . . . . ii 中文摘要 . . . . . . . . . . . . . . iv 英文摘要 . . . . . . . . . . . . . . v 目錄 . . . . . . . . . . . . . . . . . vii 圖目錄 . . . . . . . . . . . . . . . x 表目錄 . . . . . . . . . . . . . . . xviii 1 Introduction . . 1 1.1 Prologue . . 1 1.2 Wurtzite III-Nitride Compound Semiconductors . . 2 1.3 Characteristics of the InGaN Quantum Well Structures . . 4 1.3.1 Strain Eect and Quantum Conned Effect . . 5 1.3.2 Spontaneous Polarization and Strain-induced Piezoelectric Polarization Effects . . 10 1.4 Photonic Band Gap in Nonostructures . . 13 1.5 Brief Introduction of Semiconductor Laser Diodes . . 14 1.6 Motivation . . 16 2 Formalism . . 20 2.1 The Total Polarization Charge Model . . 20 2.2 Self-consistent Model . . 24 2.2.1 Poisson Equation . . 25 2.2.2 6x6 k·p Schrodinger Method . . 29 2.3 Optical Properties of InGaN/AlInN Quantum Well . . 33 3 Light Emission Polarization Anisotropy of Tensile strained InGaN/AlInN Quantum Well . . 37 3.1 Selection of AlxIn(1-x)N Material for the Barrier Layer . . 38 3.1.1 Optical Matrix Elements Characteristics . . 44 3.1.2 Spontaneous Emission Characteristics . . 50 3.1.3 Optical Gain Characteristics . . 58 3.1.4 Threshold Carrier Density and Threshold Current Density Analysis . . 63 3.2 Summary . . 65 4 Quantum Well Width Dependence of Optical Properties from Tensile Strained InGaN/AlInN Quantum Well . . 67 4.1 Result and Discussion . . 67 4.1.1 Polarization Ratio . . 71 4.1.2 Peak Gain of TM polarized . . 75 4.2 Summary . . 78 5 Conclusion . . 79 Reference . . 81 | |
| dc.language.iso | en | |
| dc.subject | 量子井 | zh_TW |
| dc.subject | 氮化銦鎵 | zh_TW |
| dc.subject | 氮化鋁銦 | zh_TW |
| dc.subject | 'c'平面 | zh_TW |
| dc.subject | 橫磁模態 | zh_TW |
| dc.subject | 雷射二極體 | zh_TW |
| dc.subject | 拉伸應變 | zh_TW |
| dc.subject | 帕松方程 | zh_TW |
| dc.subject | 薛丁格方程 | zh_TW |
| dc.subject | k·p法 | zh_TW |
| dc.subject | 極化率 | zh_TW |
| dc.subject | 自發性輻射 | zh_TW |
| dc.subject | 光增益 | zh_TW |
| dc.subject | k·p method | en |
| dc.subject | Schrodinger equation | en |
| dc.subject | polarization ratio | en |
| dc.subject | quantum well (QW) | en |
| dc.subject | optical gain | en |
| dc.subject | spontaneous emission | en |
| dc.subject | InGaN | en |
| dc.subject | AlInN | en |
| dc.subject | c-plane | en |
| dc.subject | TM mode | en |
| dc.subject | laser diodes (LDs) | en |
| dc.subject | tensile strain | en |
| dc.subject | Poisson equation | en |
| dc.title | 氮化銦鎵/氮化鋁銦量子井在拉伸應變下各向異性光極化特性之數值模擬分析 | zh_TW |
| dc.title | Numerical Analysis Optical Polarization Anisotropy of Tensile Strained InGaN/AlInN Quantum Wells | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 彭隆瀚(Lung-Han Peng),黃建璋(Jian-Jang Huang) | |
| dc.subject.keyword | 氮化銦鎵,氮化鋁銦,'c'平面,橫磁模態,雷射二極體,拉伸應變,帕松方程,薛丁格方程,k·p法,極化率,自發性輻射,光增益,量子井, | zh_TW |
| dc.subject.keyword | InGaN,AlInN,c-plane,TM mode,laser diodes (LDs),tensile strain,Poisson equation,Schrodinger equation,k·p method,polarization ratio,spontaneous emission,optical gain,quantum well (QW), | en |
| dc.relation.page | 92 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-08-20 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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