請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46830完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林清富(Ching-Fuh Lin) | |
| dc.contributor.author | Cha-Hsin Chao | en |
| dc.contributor.author | 趙家忻 | zh_TW |
| dc.date.accessioned | 2021-06-15T05:41:57Z | - |
| dc.date.available | 2015-08-26 | |
| dc.date.copyright | 2010-08-26 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-08-21 | |
| dc.identifier.citation | Chapter 1
[1] U. Őzgür, Y. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Dog-brevean, V. Avrutin, S. J. Cho, H. Morkç, J. Appl. Phys 98, 041301 (2005). [2] Z. L. Wang, J. Phys.: Condens. Matter 16, R829 (2004). [3] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003). [4] T. Nakada, Y. Hirabayashi, T. Tokado, D. Ohmori, and T. Mise, Sol. Energy 77,739 (2004). [5] S. Y. Lee, E. S. Shim, H. S. Kang, S. S. Pang, and J. S. Kang, Thin Solid Films 437, 31 (2005). [6] R. KÄonenkamp, R. C. Word, and C. Schlegel, Appl. Phys. Lett. 85, 6004 (2004). [7] S. T. Mckinstry, and P. Muralt, J. Electroceram. 12, 7 (2004). [8] Z. L. Wang, X. Y. Kong, Y. Ding, P. Gao, W. L. Hughes, R. Yang, and Y. Zhang, Adv. Funct. Mater. 14, 943 (2004). [9] M. S. Wagh, L. A. Patil, T. Seth, and D. P. Amalnerkar, Mater. Chem. Phys. 84, 228 (2004). [10] Y. Ushio, M. Miyayama, and H. Yanagida, Sensor Actuat. B 17, 221 (1994). [11] H. Harima, J. Phys.: Condens. Matter 16, S5653 (2004). [12] S. J. Pearton, W. H. Heo, M. Ivill, D. P. Norton, and T. Steiner, Semicond. Sci. Technol. 19, R59 (2004). [13] X. Liu, X. Wu, H. Cao, and R. P. H. Chang, Jour. Appl. Phys. 95, 15 (2004). [14] “Scopus“ database, http://www.scopus.com/home.url [15] C. W. Bunn, Proc. Phys. Soc. London 47, 835 (1935). [16] J. J. Hopfield, Phys. Rev. 112, 1555 (1958). [17] J. Shah, Solid State Electron. 21, 43 (1978). [18] C. Klingshirn, ChemPhysChem 8, 782 (2007). [19] D. C. Reynolds, D. C. Look, and B. Jogai, Solid State Comm. 99, 873 (1996). [20] P. Zu, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Solid State Comm. 103, 459 (1997). [21] M. Ohyama, H. Kouzuka, and T. Yoko, Thin Solid Films 306, 78 (1997). [22] L. Vayssieres, Adv. Mater. 15, 464 (2003). [23] P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Appl. Phys. Lett. 82, 117, (2003). [24] T. Nakamura, H. Minoura, and H. Muto, Thin Solid Films 405, 109 (2002). [25] Y. Sun, G. M. Fuge, and M. N. R. Ashfold, Chem. Phys. Lett. 396, 21 (2004). [26] C. H. Bae, S. M. Park, S. C. Park, and H. S. Ha, Nanotechnology 17, 381 (2006). [27] J. J. Wu and S. C. Liu, Adv. Mater. 14, 215 (2002). [28] B. S. Li, Y. C. Liu, Z. S. Chu, D. Z. Shen, Y. M. Lu, J. Y. Zhang, and X. W. Fan, J. Appl. Phys. 91, 501 (2002). [29] Xiaonan Li, Brian Keyes, Sally Asher, S. B. Zhang, Su-Huai Wei,Timothy J. Coutts, Sukit Limpijumnong, and Chris G. Van de Walle, Appl. Phys. Lett. 86, 122107 (2005). [30] J. Zhong, S. Muthukumar, Y. Chen, Y. Lu, H. M. Ng, W. Jiang, and E. L. Garfunkel, Appl. Phys. Lett. 83, 3401 (2003) [31] M. C. Jeong, B. Y. Oh, W. Lee and J. M. Myoung, J. Cryst. Growth, 268, 149 (2004). [32] W. Z. Xu, Z. Z. Ye, D. W. Ma, H. M. Lu, L. P. Zhu, B. H. Zhao, X. D. Yang, and Z. Y. Xu, Appl. Phys. Lett. 87, 093110 (2005). [33] K. Nakahara, H. Takasu, P. Fons, K. Iwata, A. Yamada, K. Matsubara, R. Hunger, and S. Niki, J. Cryst. Growth, 227, 923(2001). [34] V. A. Fonoberov and A. A. Baladin, Applied Physics Letters, 85, 5971 (2004). [35] M. Scharrer, X. Wu, A. Yamilov, H. Cao, and R. P. H. Chang, Applied Physics Letters, 86, 1 (2005). [36] M. Schuisky, J. W. Elam, and S. M. George, Appl. Phys. Lett. 81, 180 (2002). Chapter 2 [1] Harald Brune, “Nanotechnology: assessment and perspectives,” Berlin Heidelberg New York Springer, pp. 31 (2006). [2] Z. Y. Wang, B. B. Huang, X. Y. Qin, X. Y. Zhang, P. Wang, J. Y. Wei, J. Zhan, X. Y. Jing, H. X. Liu, Z. H. Xu, H. F. Cheng, X. N. Wang, and Z. K. Zheng, Mater. Lett. 63, 130 (2009). [3] S. C. Minne, S. R. Manalis, and C. F. Quate, Appl. Phys. Lett. 67, 3918 (1995). [4] M. H. Huang, S. Mao, H. Feick, H. Q. Yan, Y. Y. Wu, H. Kind, E. Weber, R. Russo, and P. D. Yang, Science 292, 1897 (2001) [5] L. Vayssieres, Adv. Mater. 15, 464 (2003). [6] Y. Li, G. W. Meng, L. D. Zhang and F. Phillipp, Appl. Phys. Lett. 76, 011-2013 (2000). [7] H. D. Yu, Z. P. Zhang, M. Y. Han, X. T. Hao and F. R. Zhu, J. Am. Chem. Soc. 127 (8), 2378-2379 (2005). [8] Y. K. Park, A. Umar, E. W. Lee, D. M. Hong and Y. B. Hahn, J. Nanosci. Nanotechnol. 9 (10), 5745-5751 (2009). [9] Y. Ding, X. Y. Kong and Z. L. Wang, Phys. Rev. B 70 (23) (2004). [10] P. X. Gao and Z. L. Wang, Small 1 (10), 945-949 (2005). [11] J. Zhang, K. Qu, X. X. Yang, L. Wei, X. B. Zhang, Z. W. Zhao and B. P. Wang, IEEE Electron Device Lett. 30 (9), 1005-1006 (2009). [12] Y. J. Kim, J. Yoo, B. H. Kwon, Y. J. Hong, C. H. Lee and G. C. Yi, Nanotechnology 19 (31) (2008). [13] U. N. Maiti, A. Sen, M. K. Mitra and K. K. Chattopadhyay, J. Nanosci. Nanotechnol. 10 (7), 4341-4347 (2010). [14] J. Y. Lao, J. G. Wen and Z. F. Ren, Nano Lett. 2 (11), 1287-1291 (2002). [15] Q. Ahsanulhaq, A. Umar, and Y. B. Hahn, Nanotechnology 18, 115603 (2007). [16] W. I. Park, G. C. Yi, J. W. Kim, and S. M. Park, Appl. Phys. Lett. 82, 4358 (2003). [17] S. Liu and J. J. Wu, Mater. Res. Soc. Symp. Proc. 703, 241 (2002). [18] M. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. D. Yang, Adv. Mater. 13, 113 (2001). [19] J. H. Choi, H. Tabata, and T. J. Kawai, J. Cryst. Growth 226, 493 (2001). [20] Y. Zhou, W. B. Wu, G. D. Hu, H. T. Wu, and S. G. Cui, Materials Research Bulletin 43, 2113 (2008). [21] J. B. Cui, Q. Zeng, and Ursula J. Gibson , J. Appl. Phys. 99, 08M113 (2006). [22] J. Zhang, L.D. Sun, X.C. Jiang, C.S. Liao, and C.H. Yan, Cryst. Growth Des. 4, 309 (2004). [23] V. Gupta, P. Bhattacharya, Y.I. Yuzuk, K. Sreenivas, and R.S. Katiyar, J. Cryst. Growth 287, 39 (2006). [24] S. Xu, C. S. Lao, B. Weintraub, and Z. L. Wang, J. Mater. Res. 23, 2072, (2008). [25] K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996). [26] F. H. Leiter, H. R. Alves, A. Hofstaetter, D. M. Hofmann, and B. K. Meyer, Phys. Status Solidi B 226, R4 (2001). [27] T. M. Børseth, B. G. Svensson, A. Y. Kuznetsov, P. Klason, Q. X. Zhao, and M. Willander, Appl. Phys. Lett. 89, 262112 (2006). [28] B. X. Lin, Z. X. Fu, and Y. B. Jia, Appl. Phys. Lett. 79, 943 (2001). [29] A. B. Djuriši, Y. H. Leung, K. H. Tam, Y. F. Hsu, L. Ding, W. K. Ge, Y. C. Zhong, K. S. Wong, W. K. Chan, H. L. Tam, K. W. Cheah, W. M. Kwok, and D. L. Phillips, Nanotechnology 18, 095702 (2007). [30] F. Tuomisto, V. Ranki, K. Saarinen, and D. C. Look, Phys. Rev. Lett. 91, 205502 (2003). [31] M. Liu, A. H. Kitai, and P. Mascher, J. Lumin. 54, 35 (1992). [32] N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Appl. Phys. Lett. 81, 622 (2002). Chapter 3 [1] L. Vayssieres, Adv. Mater. 15, 464 (2003). [2] Y. Sun, G. M. Fuge, N. A. Fox, D. J. Riley and M. N. R. Ashfold, Adv. Mater. 17, 2477 (2005). [3] Y. Su, L. Li, Y. Q. Chen, Q. T. Zhou, M. Gao, Q. Chen and Y. Feng, J. Cryst. Growth 311, 2466 (2009). [4] W. I. Park and G. C. Yi, Adv. Mater. 16, 87 (2004). [5] J. B. Cui, C. P. Daghlian, U. J. Gibson, R. Pusche, P. Geithner, and L. Ley, J. Appl. Phys. 97, 044315 (2005). [6] C. Bekeny, T. Voss, H. Gafsi, J. Gutowski, B. Postels, M. Kreye, and A. Waag, J. Appl. Phys. 100, 104317 (2006). [7] C. Li, G. J. Fang, Q. Fu, F. H. Su, G. H. Li, X. G.Wu, and X. Z. Zhao, J. Cryst. Growth 292, 19 (2006). [8] M. Guo, P. Diao, X. D. Wang, and S. M. Cai, J. Solid State Chem. 178, 3210 (2005). [9] S. Baruah and J. Dutta, J. Cryst. Growth 311, 2549 (2009). [10] J. Song and S. Lim, J. Phys. Chem. C 111, 596 (2007). [11] Y. Sun, D. J. Riley and M. N. R. Ashfold, J. Phys. Chem. B 110, 15186 (2006). [12] H. Q. Le, S. J. Chua, Y. W. Koh, K. P. Loh and E. A. Fitzgerald, J. Cryst. Growth 293, 36 (2006). [13] Hsu, J. W. P.; Tian, Z. R.; Simmons, . C.; Matzke, C. M.; Voigt, J. A.; Liu, J. Nano Lett. 2005 5, 83. [14] Wang, Y. D.; Zang,K. Y.; Chua, S. J.; Fonstad, C. G. Appl. Phys. Lett. 2006 89, 263116. [15] Y. Sung-Hak, C. Seung-Kyu, J. Jae-Min, K. Seung-Hee, A.K. Jung, and J. Woo-Gwang, SPIE 6474, 64741L (2007). [16] B.S. Kang, S.J. Pearton, and F. Ren, Appl. Phys. Lett. 90, 083104 (2007). [17] J. Zhang, L.D. Sun, J.L. Yin, H.L. Su, C.S. Liao, and C.H. Yan, Chem. Mater. 14, 4172 (2002). [18] R. A. Laudise, A. A. Ballman, J. Phys. Chem. 64 688 (1960). [19] W. J. Li, E. W. Shi, M. Y. Tian, B. G. Wang, W. Z. Zhong, Sci. China E 28 212 (1998). [20] J. S. Huang, C. F. Lin, J. Appl. Phys. 103, 014304 (2008). [21] Y. Tak and K. J. Yong, J. Phys. Chem. B 109, 19263 (2005). [22] J. B. Cui, C. P. Daghlian, U. J. Gibson, R. Pusche, P. Geithner, and L. Ley, , J. Appl. Phys. 97, 044315 (2005). [23] J. Cui and U. Gibson, Nanotechnology 18, 155302 (2007). [24] Yong-Jin Kim, Chul-Ho Lee, Young Joon Hong, Gyu-Chul Yia, Sung Soo Kim, and Hyeonsik Cheong, Appl. Phys. Lett. 89, 163128 (2006). [25] Y. J. Kim, C. H. Lee, Y.J. Hong, G. C. Yia, S. S. Kim, H. Cheong, Appl. Phys. Lett. 89, 163128 (2006). [26] M. E. Coltrin, J. W. P. Hsu, D. A. Scrymgeour, J. R. Creighton, N. C. Simmons, C. M. J. Matzke, Cryst. Growth 310, 584 (2008). [27] Q. Ahsanulhaq, A. Umar, Y. B. Hahn, Nanotechnology 18, 115603 (2007). [28] B. Reeja-Jayan, E. De la Rosa, S. Sepulveda-Guzman, R. A. Rodriguez, M. Jose Yacaman, J. Phys. Chem. C 112, 240 (2008). [29] Xianghui Zhang et al. Appl. Phys. Lett. 87, 123111, (2005) [30] L. Vayssieres, K. Keis, A. Hagfeldt, and S. E. Lindquist, Chem. Mater. 13, 4395, (2001). Chapter 4 [1] K. Okamura , D. Nikolova , N. Mechau, H. Hahn, Appl. Phys. Lett. 94, 183503 (2009). [2] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, S. A. Stockman, Appl. Phys. Lett. 78, 3379 (2001). [3] D. C. Olson, Y. J. Lee, M. S. White, N. Kopidakis, S. E. Shaheen, D. S. Ginley, J. A. Voigt, J. W. P. Hsu, J. Phys. Chem. C 112, 9544 (2008). [4] M. L. Lee, P. F. Chi, J. K. Sheu, Appl. Phys. Lett. 94, 013512 (2009). [5] H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, X. Z. Zhao, Appl. Phys. Lett. 95, 013509 (2009). [6] P. F. Carcia, R. S. McLean, M. H. Reilly, G. Nunes, Appl. Phys. Lett. 82, 1117 (2003). [7] P. L. Chen, X. Y. Ma, D. R. Yang, J. Appl. Phys. 101, 053103 (2004 ). [8] B. M. Ataev, Y. I. Alivov, E. V. Kalinina, V. V. Mamedov, G. A. Onushkin, S. S. Makhmudov, A. K. Omaev, J. Crystal Growth 275, e2471 (2005). [9] R. K. Gupt, K. Ghosh, P. K. Kahol, Physica E 41, 617 (2009 ). [10] J. Herrero, C. Guillen, Thin Solid Films 451, 630 (2004). [11] C. X. Wang, G. W. Yang, H. W. Liu, Y. H. Han, J. F. Luo, C. X. Gao, G. T. Zou, Appl. Phys. Lett. 84, 2427 (2004). [12] A. Tiwari, C. Jin, D. Kumar, J. Narayan, Appl. Phys. Lett. 83, 1773 (2003). [13] Y. T. Zhang, G. T. Du, B. Y. Liu, H. C. Zhu, T. P. Yang, W. C. Li, D. L. Liu, S. R. Yang, J. Crystal Growth 262, 456 (2004). [14] R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Iliadis, K. A. Jones, Appl. Phys. Lett. 73, 348 (1998). [15] A. Nahhas, H. K. Kim, J. Blachere, Appl. Phys. Lett. 78, 1511 (2001). [16] H. Asıl, Emre Gür, K. Çınar, C. Cokun, Appl. Phys. Lett. 94, 253501 (2009). [17] D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002). [18] C. W. Lin, D. J. Kea, Y. C. Chao, L. Chang, M. H. Liang, Y. T. Ho, J. Crystal Growth 298, 472 (2007). [19] H. Q. Le, S. J. Chua, Y. W. Koh, K. P. Loh, E. A. Fitzgeral, J. Cryst. Growth 293, 36 (2006). [20] H. Y. Gao, F. W. Yan, J. M. Li, Y. P. Zeng, J. X. Wang, J. Phys. D: Appl. Phys. 40, 3654 (2007). [21] J. J. Cole, X. Y. Wang, R. J. Knuesel, H. O. Jacobs, Nano Lett. 8, 1477 (2008). [22] L. Vayssieres, Adv. Mater. 15, 464 (2003). [23] J. D. Albrecht, P. P. Ruden, S. Limpijumnong, W. R. L. Lambrecht, and K. F. Brennan, J. Appl. Phys. 86, 6864 (1991) [24] D. C. Look, J. W. Hemsky, and J. R. Sizelove, Phys. Rev. Lett. 82, 2552 (1999) D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwell, and W. C. Harsch, Solid State Commun. 105, 399 (1998) [25] J. Nause and B. Nemeth, Semicond. Sci. Technol. 20, S45 (2005) [26] K. Maeda, M. Sato, I. Niikura, and T. Fukuda, Semicond. Sci. Technol. 20, S49 (2005) [27] D. S. Ginley and C. Bright, Mater. Res. Bull. 25, 15 (2000); E. M. Kaidashev et al., Appl. Phys. Lett. 82, 3901 (2003) [28] H. Kato, M. Sano, K. Miyamoto, and T. Yao, Jpn. J. Appl. Phys., Part 1 42, 2241 (2003) [29] K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, and H. Takasu, Phys. Status Solidi A 180, 287 (2000) [30] T. Edahiro, N. Fujimura, and T. Ito, J. Appl. Phys. 93, 7673 (2003) [31] K. Miyamoto, M. Sano, H. Kato, and T. Yao, Jpn. J. Appl. Phys., Part 2 41, L1203 (2002); J. Cryst. Growth 265, 34 (2004) [32] M. V. Cho, A. Setiawan, K. J. Ko, S. K. Hong, and T. Yao, Semicond. Sci. Technol. 20, S13 (2005) [33] A. Ohmoto and A. Tsukazaki, Semicond. Sci. Technol. 20, S1 (2005) Chapter 5 1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, New York, 1997). 2. M. A. Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, “Metal semiconductor field effect transistor ased on single crystal GaN,” Appl. Phys. Lett. 62, 1786 (1993). 3. M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, “High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365 (1999). 4. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78, 3379 (2001). 5. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys. 93, 9383 (2003). 6. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855 (2004). 7. C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall,” IEEE Photonics Technol. Lett. 17, 2038 (2005). 8. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, J. R. Wendt, M. M. Sigalas, S. R. J. Brueck, D. Li, and M. Shagam, “III-Nitride LEDs with photonic crystal structures,” Proc. SPIE 5739, 102 (2005). 9. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75, 2569 (1999). 10. S. E. Ahn, J. S. Lee, H. Kim, S. Kim, B. H. Kang, K. H. Kim, and G. T. Kim, “Photoresponse of sol-gel-synthesized ZnO nanorods,” Appl. Phys. Lett. 84, 5022 (2004). 11. J. M. Wang and L. Gao, “Wet chemical synthesis of ultralong and straight single-crystalline ZnO nanowires and their excellent UV emission properties,” J. Mater. Chem. 13, 2551 (2003). 12. J. Zhong, H. Chen, G. Saraf, and Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90, 203515 (2007). 13. M. K. Lee, C. L. Ho, and P. C. Chen, “Light Extraction Efficiency Enhancement of GaN Blue LED by Liquid-Phase-Deposited ZnO Rods,” IEEE Photonics Technol. Lett. 20, 252 (2008). 14. M. Ohyama, H. Kouzuka, T. Yoko, “Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution,” Thin Solid Films 306, 78 (1997). 15. J. V. Smith, Geometrical and Structural Crystallography (Wiley, New York, 1982). 16. S. J. An, J. H. Chae, G. C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92, 121108 (2008). 17. D. E. Aspnes, “Optical properties of thin films,” Thin Solid Films 89, 249 (1982). 18. J. Y. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, “GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer,” Appl. Phys. Lett. 88, 013501 (2006). Chapter 6 [1] S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode. 2nd ed. New York:Springer, 2000, pp. 7-10. [2] M. A. Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, 'Metal-semiconductor field-effect transistor based on single-crystal GaN,' Applied Physics Letters, vol. 62, pp. 1786-1787, Apr 1993. [3] E. F. Schubert, Light-Emitting Diodes, Cambridge University Press, Cambridge, 2003, pp.97. [4] C. C. Kao, H. C. Kuo, H. W. Huang, J. T. Chu, Y. C. Peng, Y. L. Hsieh, C. Y. Luo, S. C. Wang, C. C. Yu, and C. F. Lin, “Light–output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls,” IEEE Photon. Technol. Lett., vol. 17, no. 1, pp. 19–21, Jan.2005. [5] Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, 'Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,' Applied Physics Letters, vol. 82, pp. 2221-2223, Apr 2003. [6] J. J. Wierer, A. David, and M. M. Megens, 'III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,' Nature Photonics, vol. 3, pp. 163-169, 2009. [7] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, 'Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,' Applied Physics Letters, vol. 84, pp. 855-857, 2004. [8] C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, 'Improved light-output and electrical performance of ingan-based, light-emitting diode by microroughening of the p-GaN surface,' Journal of Applied Physics, vol. 93, pp. 9383-9385, 2003. [9] H. Huang, C. H. Lin, C. C. Yu, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, S. C. Wang, and B. D. Lee, 'Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,' Nanotechnology, vol. 19, 2008. [10] C. F. Lin, Z. H. Yang, J. H. Zheng, and J. H. Dai, 'Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall,' IEEE Photonics Technology Letters, vol. 17, pp. 2038-2040, 2005. [11] H. W. Huang, H. C. Kuo, J. T. Chu, C. F. Lai, C. C. Kao, T. C. Lu, S. C. Wang, R. J. Tsai, C. C. Yu, and C. F. Lin, 'Nitride-based leds with nano-scale textured sidewalls using natural lithography,' Nanotechnology, vol. 17, pp. 2998-3001, Jun 2006. [12] S. J. An, J. H. Chae, G. C. Yi, and G. H. Park, 'Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,' Applied Physics Letters, vol. 92, Mar 2008. [13] L. Vayssieres, 'Growth of arrayed nanorods and nanowires of zno from aqueous solutions,' Advanced Materials, vol. 15, pp. 464-466, 2003. [14] D. E. Aspnes, 'Optical-properties of thin-films,' Thin Solid Films, vol. 89, pp. 249-262, 1982. [15] J. K. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, 'Gainn light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer,' Applied Physics Letters, vol. 88, 2006. Chapter 7 [1] Kuveshni Govender, David S. Boyle, Peter B. Kenway and Paul O’Brien, J. Mater. Chem. 14, 2575 (2004). [2] Puntes, V. F.; Krishnan, K. M.; Alivisatos, A. P. Science 291, 2115 (2001). [3] José Restolho, José L. Mata, and Benilde Saramago, J. Colloid Interf. Sci. 340, 82 (2009). [4] S. Joon Kwona and Jae-Gwan Park, J. Chem. Phys. 122, 214714 (2005). [5] Zhengzhi Zhou and Yulin Deng, J. Phys. Chem. C 113, 19853 (2009). [6] Kuveshni Govender, David S. Boyle, Peter B. Kenway and Paul O’Brien, J. Mater. Chem. 14, 2575 (2004). [7] D. C. Oh, T. Suzuki, J. J. Kim, H. Makino, T. Hanada, M. W. Cho, and T. Yao, Appl. Phys. Lett. 86, 032909 (2005). [8] J. S. Song, J. H. Chang, D. C. Oh, J. J. Kim, M. W. Cho, H. Makino, T. Hanada, and T. Yao, J. Cryst. Growth 249, 128 (2003). [9] D. C. Oh, S. W. Lee, H. Goto, S. H. Park, I. H. Im, T. Hanada, M. W. Cho, and T. Yao, Appl. Phys. Lett. 91, 132112 (2007). [10] T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, Jpn. J. Appl. Phys., Part 1 43, 2602 (2004). [11] Q. Zhao, X. Y. Xu, X. F. Song, X. Z. Zhang, D. P. Yu, C. P. Li, and L. Guo, Appl. Phys. Lett. 88, 033102 (2006). [12] H. S. Kang, J. S. Kang, S. S. Pang, E. S. Shim, and S. Y. Lee, Mater. Sci. Eng., B 102, 313 (2003). [13] Baodian Yao, Lin Feng, Chun Cheng, Michael M. T. Loy, and Ning Wang, Appl. Phys. Lett. 96, 223105 (2010). [14] X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, Appl. Phys. Lett. 75, 2569 (1999). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46830 | - |
| dc.description.abstract | 在本論文中，我們研究了使用水熱法製備之氧化鋅奈米結構的合成，同時也探討了氧化鋅奈米結構的合成機制及其材料和光電特性。材料特性的檢驗由場發射電子顯微以及X-ray繞射，能量散射X射線光譜儀來完成。同時也驗證了氧化鋅奈米陣列在發光二極體上的應用，此項特性可以用於增進發光二極體的出光效率。此論文的內容重點可以分為四個部份：
1. 氧化鋅奈米結構的控制成長 在此部份中，我們研究了氧化鋅奈米結構的控制成長機制，同時也從實驗結果中討論了控制氧化鋅奈米結構成長的機制。結果顯示，使用不同溶液濃度成長出的氧化鋅奈米陣列，成長出的尺寸可從50 nm到300 nm。此外，我們也探討了不同幾何尺寸的基板成長出的氧化鋅奈米結構。若是用模板輔助控制成長，使用不同溶液濃度成長出的氧化鋅奈米陣列，成長出的尺寸可從50 nm到1400 nm。 2. 氧化鋅奈米結構的異質界面成長 在此部份中，我們研究了氧化鋅奈米結構的異質接面長晶，同時也從實驗結果中討論了控制氧化鋅奈米結構成長的機制。結果顯示，使用氮化鎵的基板來成長氧化鋅微奈米結構，可以達到良好的長晶品質。此外，我們也探討了不同幾何尺寸的基板成長出的氧化鋅微奈米結構。若是用模板輔助控制成長，使用不同溶液濃度成長出的氧化鋅奈米陣列，成長出的尺寸可從530 nm到3500 nm。 3. 氧化鋅奈米結構增進發光二極體的出光效率 在此部份中，我們研究了氧化鋅奈米結構對於增進氮化鎵發光二極體出光效率的影響。結果顯示，氮化鎵發光二極體的出光效率隨著表面的氧化鋅奈米陣列的長度影響而呈現週期性的振盪變化。出光效率隨氧化鋅奈米柱長度呈現的振盪變化可以解釋為光線在氧化鋅奈米柱裡來回反射，造成發光二極體的特性改變。 4. 氮化鎵奈米結構增進發光二極體的出光效率 在此部份中，我們研究了氮化鎵奈米結構對於增進氮化鎵發光二極體輸出功率的影響。結果顯示，氮化鎵發光二極體的輸出功率隨著表面的氮化鎵奈米陣列的長度影響而呈現週期性的振盪變化，與前部份的結果類似。此結果可由Bruggemann effective medium approximation 及Fabry-Perot resonance來解釋。 | zh_TW |
| dc.description.abstract | In this thesis, the synthesis of ZnO nanostructures via hydrothermal method is studied. The systhesis chemistry of various ZnO structures and its material and optoelectronic characterization are reviewed and investigated. Field-emission scanning electron microscope (FESEM), X-ray diffraction (XRD) and energy-dispersive X-ray (EDX) spectroscopy are performed to examine the properties of ZnO. Applications of ZnO nanorod arrays have been demonstrated to enhance the light extraction efficiency of light-emitting diodes (LEDs). The content of the thesis can be mainly divided into four part as follows.
1. Controlled-growth of ZnO nanostructures The experimental techniques of controlled-growth of ZnO nanostructrures used in this dissertation and the underlying growth mechanisms are described. The effect of growth parameters on the formation of ZnO nanorod arrays is elucidated with detailed analysis from our experimental results. The scale and morphology of ZnO nanorod arrays grown on the sol-gel-derived film are controlled with a wide size range from 50 nm to 300 nm in diameter. With applying a template to limit the growth of ZnO rods, the diameters of ZnO rod arrays grown with various solution concentrations can be controlled in the range from 50 nm up to 1400 nm. 2. Hetero-growth of ZnO nanostructures The heteroepitaxy of ZnO is accomplished on various substrates by hydrothermal method. The results show that the grown ZnO micro/nanostructures and thin films have a good epitaxial quality on GaN substraets. In addition, the differences in morphologies of ZnO rod arrays grown with various diameters of polymer apertures are discussed. The controlled diameters of rods with various solution concentrations and geometry of template are in the range from 530 nm up to 3.5 μm. 3. Enhanced light extractions efficiency of LEDs by ZnO nanorods The effect of the ZnO rod length on the output light intensity of GaN-based LEDs is investigated. It is firstly found that the EL intensity of GaN-based with ZnO nanorod arrays is varied periodically with the rod length. The oscillation as a function of rod length can be explained as the interference of light emission between interfaces of nanorods, resulting in a modulation of light extraction efficiency of the devices. 4. Enhanced light extractions efficiency of LEDs by GaN nanorods In addition, the effect of the geometry of GaN rod arrays on the output power of GaN LEDs is studied. It is found that the output power of GaN LEDs with GaN rod arrays is varied with the length and density of rods, which is analogous to the previous results. The Bruggemann effective medium approximation and the Fabry-Perot resonance also work well for GaN rod arrays on GaN LEDs. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T05:41:57Z (GMT). No. of bitstreams: 1 ntu-99-F91941021-1.pdf: 6070916 bytes, checksum: dd3bee84c38db11e69bcfe4ae1bad318 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | Contents
List of Figures - - - - - - - - - - - - - - XI List of Tables - - - - - - - - - - - - - - XV Chapter 1 Introduction - - - - - - - - - - - 1 1.1 Introduction to ZnO - - - - - - - - - - - - 1 1.2 Synthesis of ZnO - - - - - - - - - - - - 5 1.2.1 Solution-based chemistry - - - - - - - - - - 5 1.2.2 Physical vapor deposition - - - - - - - - - - 7 1.2.3 Chemical vapor deposition - - - - - - - - - -8 1.3 Overview of the dissertation - - - - - - - - - 11 1.4 References - - - - - - - - - - - - -14 Chapter 2 Synthesis of ZnO nanostructures - - - - - - - 16 2.1 Introduction - - - - - - - - - - - - -16 2.2 Experiment - - - - - - - - - - - 20 2.3 Results and discussion - - - - - - - - - - 22 2.3.1 FESEM images - - - - - - - - - - 22 2.3.2 Material characterizations - - - - - - - - - 24 2.3.3 Optical properties - - - - - - - - - 25 2.4 Summary - - - - - - - - - - - - 29 2.5 References - - - - - - - - - - - - 30 Chapter 3 Controlled growth of ZnO nanostructures - - - - - 32 3.1 Introduction - - - - - - - - - - - 32 3.2 Non-template-based controlled growth of ZnO nanostructures - - - 34 3.2.1 Experimental procedures - - - - - - - - - - 34 3.2.2 Experimental results - - - - - - - - - 35 3.2.2.1 Concentration and reaction time - - - - - - 35 3.2.2.2 Substrate effect - - - - - - - - - - 40 3.2.2.3 Stirring effect - - - - - - - - - 40 3.2.3 Summary- - - - - - - - - - - - - 43 3.3 Template-based controlled growth of ZnO nanostructures - - - - 44 3.3.1 Experimental procedures - - - - - - - - - - 45 3.3.2 Experimental results - - - - - - - - - 46 3.3.2.1 FESEM images - - - - - - - - - - 46 3.3.2.2 Characterization and analyses - - - - - - - - 48 3.3.2.3 Mechanism of controlled growth - - - - - - 52 3.3.2.4 Concentration dependence - - - - - - - - 54 3.3.2.5 Dependence of geometry of polymer aperture arrays - - - - -55 3.3.2.6 Dependence of substrate effect and reaction time - - - 57 3.3.3 Summary - - - - - - - - - - - - -59 3.4 References - - - - - - - - - - - -60 Chapter 4 Hetero-growth of ZnO nanostructures - - - - - - - 62 4.1 Introduction - - - - - - - - - - - - -62 4.2 Hetero-grwoth of ZnO nanostructures on non-GaN substrates - - - 63 4.2.1 Experimental procedures - - - - - - - - - - 63 4.2.2 Experimental results - - - - - - - - - 63 4.2.3 Summary - - - - - - - - - - - - -65 4.3 Hetero-grwoth of ZnO nanostructures on GaN substrates - - - - 66 4.3.1 on undoped GaN substrates - - - - - - - - 66 4.3.1.1 Experimental procedures - - - - - - - 66 4.3.1.2 Experimental results - - - - - - - - 68 4.4.1.2.1 FESEM images - - - - - - - 68 4.4.1.2.2 X-ray diffraction - - - - - - - - 70 4.3.1.3 Summary - - - - - - - - - -71 4.3.2 on p-GaN substrates - - - - - - - - - 72 4.3.2.1 Experimental procedures - - - - - - - 72 4.3.2.2 Experimental results - - - - - - - - 72 4.3.2.2.1 Concentration dependence - - - - - 72 4.3.2.2.2 Dependence of polymer apterture arrays - - - - 76 4.3.2.2.3 Dependence of geometry polymer apterture arrays- - - - 78 4.3.2.3 Discussion - - - - - - - - - 80 4.3.2.4 Summary - - - - - - - - - - 82 4.4 References - - - - - - - - - - - - 83 Chapter 5 Influence of ZnO rod arrays on the light extraction efficiency of GaN-based LEDs - - -85 5.1 Introduction - - - - - - - - - - - - 85 5.2 Experimental processes- - - - - - - - - - - 86 5.3 Experimental results- - - - - - - - - - - 87 5.4 Discussions - - - - - - - - - - - - -91 5.5 Conclusion - - - - - - - - - - - 94 5.6 References - - - - - - - - - - - 95 Chapter 6 Influence of architecture-controlled GaN rod arrays on the output power of GaN LEDs - - - - - - - - 97 6.1 Introduction - - - - - - - - - - - - 97 6.2 Experimental processes- - - - - - - - - - - 98 6.3 Results and discussions - - - - - - - - - 99 6.4 Conclusion - - - - - - - - - - - - 108 6.5 References - - - - - - - - - - - -109 Chapter 7 Conclusion - - - - - - - - - - - - 111 7.1 Dissertation conclusions - - - - - - - - - 111 7.2 Future prospects - - - - - - - - - - - 112 7.3 References - - - - - - - - - - - 125 Appendices - - - - - - - - - - - - - - 126 A List of journal articles - - - - - - - - - - 126 B List of conference and proceeding papers - - - - - - - 127 B1 Domestic conference - - - - - - - - - 127 B2 International conference - - - - - - - - - 128 C List of patents - - - - - - - - - - - 129 | |
| dc.language.iso | en | |
| dc.subject | 法布里-伯羅振盪 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 奈米柱 | zh_TW |
| dc.subject | 水熱法 | zh_TW |
| dc.subject | 電子束微影術 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 出光效率 | zh_TW |
| dc.subject | GaN | en |
| dc.subject | Fabry-Perot resonance | en |
| dc.subject | light extraction efficienty | en |
| dc.subject | light-emitting diodes | en |
| dc.subject | ZnO | en |
| dc.subject | nanorod | en |
| dc.subject | hydrothermal method | en |
| dc.subject | e-beam lithography | en |
| dc.title | 氧化鋅奈米結構之製備及其光電分析與應用 | zh_TW |
| dc.title | Synthesis and characterization of ZnO nanostructures: optoelectronic analyses and applications | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 管傑雄(Chieh-Hsiung Kuan),吳志毅(Chih-I Wu),何志浩(Jr-Hau He),林唯芳(Wei-Fang Su),陳敏璋(Miin-Jang Chen),林瑞明(Rei-Ming Lin),陳彰和(Chang-Ho Chen) | |
| dc.subject.keyword | 氧化鋅,奈米柱,水熱法,電子束微影術,氮化鎵,發光二極體,出光效率,法布里-伯羅振盪, | zh_TW |
| dc.subject.keyword | ZnO,nanorod,hydrothermal method,e-beam lithography,GaN,light-emitting diodes,light extraction efficienty,Fabry-Perot resonance, | en |
| dc.relation.page | 130 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-08-21 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-99-1.pdf 未授權公開取用 | 5.93 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。