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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂宗昕 | |
dc.contributor.author | Zhi-Liang Liu | en |
dc.contributor.author | 劉治良 | zh_TW |
dc.date.accessioned | 2021-06-15T05:11:28Z | - |
dc.date.available | 2020-12-31 | |
dc.date.copyright | 2010-07-27 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-07-23 | |
dc.identifier.citation | Reference
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46484 | - |
dc.description.abstract | 本研究成功的經由溶膠凝膠法與硒化步驟製備出銅鎵硒(CuGaSe2)化合物。因為聚合作用減少金屬氧化物之間的分隔,所以溶膠凝膠法可以減少所需的反應溫度到400OC。為了補足在硒化過程中散失的鎵元素,在溶膠凝膠法中添加過量的鎵離子可得到單相CuGaSe2粉體。隨著鎵離子對銅離子的莫爾比例減少,可使CuGaSe2粉體變大。在本研究中,探討了不同硒化條件下所得到產物之組成,並利用Rietveld分析知道所得CuGaSe2為黃銅礦結構。
本研究第二部粉使用溶膠凝膠法所得之前驅物製備CuGaSe2薄膜。經由控制在溶膠凝膠法步驟中鎵離子與銅離子間的比例,可改變所得膜之表面型態與半導體特性,隨著鎵離子對銅離子比例的增加,薄膜表面的島狀銅硒化合物和載子濃度也隨著減少,但薄膜的線電阻(Ω–cm)卻會增加。可以藉由提高反應溫度或著拉長反應時間來減少雜相Cu2Se的生成。在研究中發現,CuGaSe2薄膜其生長機制為先生成中間產物的二元銅硒化合物,接著銅硒化合物在反應生成CuGaSe2. | zh_TW |
dc.description.abstract | Copper gallium diselenide (CuGaSe2) powders were synthesized via the sol-gel method followed by a selenization process. The sol-gel process can effectively reduce the required synthesis temperature to 400oC due to enhanced reactivity and improved composition homogeneity. The amount of the impurity phase Cu2Se was decreased when sufficient Ga3+ was added during the reactions. CuGaSe2 powders were successfully prepared when the Ga3+/Cu2+ molar ratio was increased to 2. The formation of CuGaSe2 with a pure chalcopyrite structure was confirmed via Rietveld refinement results. With decreasing the Ga3+/Cu2+ molar ratios, the particle size of the prepared CuGaSe2 powders was significant enlarged because of the copper selenide phases act as the flux for the particle growth. The optical absorption spectra reveal that the band gap of obtained CuGaSe2 is 1.68 eV. The sol-gel method combine with the selenization process was demonstrated to provide a potential approach to fabricate CuGaSe2 materials.
A simple process for preparing CuGaSe2 (CGS) absorber layers was developed in this study. The sol-gel derived CGS precursor pastes were coated via a doctor blade technique followed by the selenization process. On selenization at 450oC single-phased CGS thin-films were obtained. The Raman analysis confirmed that the obtained CuGaSe2 thin films belonged to chalcopyrite structure. The amounts of Cu2Se particles on the surface of the film were reduced when the Ga3+/Cu2+ molar ratio was increased. The uniform film was obtained at the Ga3+/Cu2+ molar ratio of 1.5. The GIXD analysis reveals that the CuGaSe2 phase distributes through the whole film. Because the existence of the highly conductive Cu2Se, the resistivity of obtained CuGaSe2 films were raised with increasing the molar ratio of Ga3+ to Ga2+. The formation mechanism of CuGaSe2 thin films is proposed. The copper selenide phases formed at first and then these phases lead the formation reaction of CuGaSe2. | en |
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dc.description.tableofcontents | Content
摘要 I Abstract II Content IV List of Figures V List of Tables VII Chapter1 Introduction 1 1.1 Photovoltaic technology 1 1.1.1Evolution of solar cells 1 1.1.2 Thin-film Solar Cells 2 1.2 CIGS-based solar cells 5 1.2.1 Principle of Operation 5 1.2.2 Structure of CIGS-based Solar Cells 6 1.2.3 Material Properties of Absorber Materials 9 1.3 The Absorber Growth Methods for CIGS-based Solar Cells10 1.3.1 Vacuum Absorber Formation Techniques 10 1.3.2 Non-vacuum Absorber Formation Techniques. 11 1.4 Introduction to the Sol-gel Method 13 1.5 Research Object 14 Chapter 2 Investigation of formation of CuGaSe2 powders via the sol-gel route 25 2.1 Experimental 25 2.1.1 Synthesis of CuGaSe2 powders via the sol-gel route 25 2.1.2 Characterization of CuGaSe2 powders 26 2.2 Results and Discussion 26 2.2.1. Compositional effects on the formation and morphology of CuGaSe2 powders via the sol-gel route 26 2.2.2. Characterization of CuGaSe2 powders 29 2.2.3. Effects of the reaction conditions on the formation of CuGaSe2 powders 31 2.2.4. Formation mechanism of CuGaSe2 32 Chapter 3 investigation on formation of CuGaSe2 films via the paste coating method 45 3.1. Experimental 45 3.1.1. Mixed oxides precursor preparation 45 3.1.2 Characterization of CuGaSe2 films 46 3.2 Results and discussion 47 3.2.1. Effects of the Ga3+/Cu2+ molar ratios on the formation and morphology of CuGaSe2 films 47 3.2.2. Electrical properties of CuGaSe2 films with different compositions. 50 3.2.3 Effects of the reaction condition on the formation of CuGaSe2 films 50 3.2.4 Formation mechanism of CuGaSe2 films 53 Chapter 4 Conclusions 69 Reference 71 List of Figures Fig. 1.1 Energy band structures of Si and GaAs 15 Fig. 1.2 Relation between the absorption coefficient α and the photon energy for selected semiconductor 16 Fig. 1.3 Schematic representation of the structure of the tandem cell 17 Fig. 1.4 Schematic view of the CIGS substrate solar cell structure 18 Fig. 1.5 Crystal structure of chalcopyrite CuInSe2 19 Fig. 1.6 Deposition condition via the three-stage co-evaporation process for CIGS film by NREL 20 Fig. 1.7 Schematic representation of the Siemens CIGS module preparation process 21 Fig. 1.8 Low cost, non-vacuum methods for CIGS deposition22 Fig. 1.9 Concept of the sol-gel process via Pechini-type polymerizable complex method 23 Fig. 1.10 Schematic diagram of selenization process 24 Fig. 2.1 Flow chart of synthesis process of CuGaSe2 powders via the sol-gel route. 34 Fig. 2.2 XRD patterns of CuGaSe2 powders prepared with the Cu2+ to Ga3+ molar ratio of 1.0 at (a)precursor; selenization at, (b)450oC, (c)500oC, and (d)550oC for 1 h in the sol-gel process. 35 Fig. 2.3 XRD patterns of CuGaSe2 powder selenized at 550oC for 1 h with the Ga to Cu molar ratios of (a)1.0, (b)1.2, (c)1.5, and (d)2.0 in the sol-gel process. 36 Fig. 2.4 SEM micrograph of CuGaSe2 powders selenized at 550oC for 1 h with the Ga3+/Cu2+ molar ratio of (a) 1, (b) 1.2, (c) 1.5 and (d) 2. 37 Fig. 2.5 Observed (×) and calculate (upper solid line) X-ray diffraction pattern of CuGaSe2 powders with difference profile (lower solid line) and positions of all the reflections (vertical bars). 38 Fig. 2.6 UV spectrum of CuGaSe2 powders selenized at 550℃ for 1 h. 39 Fig. 2.7 XRD patterns of CuGaSe2 powders selenized with the Ga3+/Cu2+ molar ratio of 2 at (a)300℃, (b)350℃, (c)400 ℃, and (d)450℃ for 40 min in the sol-gel process. 40 Fig. 2.8 Se3d spectra of CuGaSe2 precursor powders selenization at (a) 300oC, (b) 400oC and (c) 450oC with the Ga3+/Cu2+ molar ration of 2. 41 Fig. 2.9 XRD patterns of CuGaSe2 powders prepared at 400oC with the Ga/Cu molar ratio of 2 for (a)20 min, (b)40 min , (c)80 min, and (d)120 min in the sol-gel process. 42 Fig. 2.10 Resultant compounds of CuGaSe2 precursors selenized with different heating condition. 43 Fig. 3.1 X-ray diffraction patterns of CuGaSe2 thin films selenized at 550oC with the Ga3+ to Cu2+ molar ratios of (a) 0.8, (b) 1.0, (c) 1.2, and (d) 1.5 for 60 min. 55 Fig. 3.2 Raman spectra of CuGaSe2 thin films selenized at 550oC with the Ga3+ to Cu2+ molar ratios of (a) 0.8, (b) 1.0, (c) 1.2, and (d) 1.5 for 60 min. 56 Fig. 3.3 SEM micrographs of the surface of CuGaSe2 thin films selenized at 550oC with the Ga3+ to Cu2+ molar ratios of (a) 0.8, (b) 1.0, (c) 1.2, and (d) 1.5 for 60 min. 57 Fig. 3.4 EDS analysis of CuGaSe2 thin film selenized at 550oC for 60 min with the Ga3+/Cu2+ molar ratio equal to 0.8, (a) the region I and (b) the region II in Fig 3.3 (a). 58 Fig. 3.5 Plot of logarithmic carrier concentration (Log Np) and resistivity of CuGaSe2 thin films versus the Ga3+/Cu2+ molar ratio. 59 Fig. 3.6 X-ray diffraction patterns of CuGaSe2 thin film precursor (a) and the precursor selenized at (b) 350℃, (c) 450℃, and (d) 550℃ for 60 min with the Ga3+/Cu2+ molar ratio equal to 1.5. 60 Fig. 3.7 Raman spectra of CuGaSe2 thin films selenized at 550oC for (a) 20 min, (b) 40 min, and (c) 60min with the Ga3+ to Cu2+ molar ratios 1.5. 61 Fig. 3.8 GIXD patterns of the films selenized at 300oC with incident angles equal to (a) 1o, (b) 2o, (c) 3o, (d) 4o and (e) 5o. 62 Fig. 3.9 GIXD patterns of the films selenized at 350oC with incident angles equal to (a) 1o, (b) 2o, (c) 3o, (d) 4o and (e) 5o. 63 Fig. 3.10 GIXD patterns of the films selenized at 400oC with incident angles equal to (a) 1o, (b) 2o, (c) 3o, (d) 4o and (e) 5o. 64 Fig. 3.11 GIXD patterns of the films selenized at 450oC with incident angles equal to (a) 1o, (b) 2o, (c) 3o, (d) 4o and (e) 5o. 65 Fig. 3.12 Plot of formed phase versus the penetration depth. 66 Fig. 3.13 X-ray diffraction patterns of CuGaSe2 precursor films selenized at (a) 250℃, (b) 300℃, (c) 350℃, (d) 400℃, and (e) 450℃ without soaking. 67 Fig. 3.14 The relations between the fraction of the resultant compounds and the reaction temperatures. 68 List of Tables Table 2.1 Rietveld refinement calculations of CuGaSe2. 44 | |
dc.language.iso | en | |
dc.title | 銅鎵硒薄膜太陽能電池材料之製備與特性分析 | zh_TW |
dc.title | Preparation and Characterization of Copper Gallium Diselenide Used as the Absorber in thin-film Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 萬本儒,林麗瓊 | |
dc.subject.keyword | 銅鎵硒,溶膠凝膠法,黃銅礦, | zh_TW |
dc.subject.keyword | CuGaSe2,sol-gel,chalcopyrite, | en |
dc.relation.page | 74 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-07-23 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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