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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46446完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張顏暉 | |
| dc.contributor.author | Jun-Chang Wu | en |
| dc.contributor.author | 吳俊昌 | zh_TW |
| dc.date.accessioned | 2021-06-15T05:09:27Z | - |
| dc.date.available | 2012-07-27 | |
| dc.date.copyright | 2010-07-27 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-07-23 | |
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Yan, H.; Yang, P. & Saykally, R., ‘Optical cavity effects in ZnO nanowire lasers and waveguides’, The Journal of Physical Chemistry B, 2003, 107, 8816-8828 17 Zhu, Y.; Zhang, H.; Sun, X.; Feng, S.; Xu, J.; Zhao, Q.; Xiang, B.; Wang, R. & Yu, D., ‘Efficient field emission from ZnO nanoneedle arrays’, Applied Physics Letters, 2003, 83, 144-146 18 Green, M.; Emery, K.; Hishikawa, Y. & Warta, W., ‘Solar cell efficiency tables (version 35)’, Progress in Photovoltaics: Research and Applications, 2010, 18, 144-150 19 Huang, Y.; Chattopadhyay, S.; Jen, Y.; Peng, C.; Liu, T.; Hsu, Y.; Pan, C.; Lo, H.; Hsu, C.; Chang, Y. & others, ‘Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures’, Nature Nanotechnology, 2007, 2, 770-774 20 Neumann, H.; Hörig, W.; Savelev, V.; Lagzdonis, J.; Schumann, B. & Kühn, G., ‘The optical properties of CuInS2 thin films’, Thin Solid Films, 1981, 79, 167-171 21 Fitzgerald, A. & Potrous, S., ‘A microbeam analysis study of heterojunctions formed with CuInS2 and CuInSe2’, Solar Energy Materials & Solar Cells, 1991, 22, 43-61 22 Bouazzi, A.; 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The broad band emission and its dependence on the defect chemistry ’, Journal of Luminescence, , 1982, 27, 35-53 46 Barreau, N.; Marsillac, S.; Albertini, D. & Bernede, J., ‘Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD’, Thin Solid Films, 2002, 403, 331-334 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/46446 | - |
| dc.description.abstract | 半導體奈米電子、光電、光伏元件等的研究近年來吸引了許多研究工作者的注意。奈米結構具有很高的表面積/體積比，因此比起塊材製造的元件，它在各類的元件上都被期待會有更好的效能。由於奈米柱陣列具有優秀的光捕捉性質，因此使用奈米柱陣列可以用來增加太陽能電池的效率。在眾多奈米材料中，由於氧化鋅奈米柱具有高透光性、高折射係數、材料成本低廉、無毒性、環保等優點，因此是最被廣泛研究的系統。
本論文第一部份首先研究以低溫、低成本的電鍍法成長氧化鋅奈米柱。結果顯示低溫下成長的奈米柱仍然有很好的結晶品質。並且藉由調控成長環境，諸如鋅離子濃度、電鍍電流、成長時間、壓力、溶解氣體等等，可以成長出不同形貌的奈米柱。 在第二部分我們使用低成本的連續離子層吸附反應方法，在室溫下成功地沈積In2S3和CuInS2薄膜於奈米柱基板上。從光學量測上我們得知ZnO/ In2S3/CuInS2核殼奈米柱陣列，對紫外光至近紅外光具有非常好的光吸收性，僅20 nm厚度的CIS殼吸收層，就能將可見光穿透率降至0.15 ％以下。此外，從電性量測結果，我們也發現核殼結構在光電元件上具有值得期待的潛力。 | zh_TW |
| dc.description.abstract | Semiconductor nanostructures have attracted much attention recently because their potential application in making electronic, optoeletronic and photovoltaic devices. Nanostructure has high surface-to-volume ratio which makes it more useful than ordinary devices made of bulk material. In addition the nanorods arrary has very good light-trapping effect and can be used to improve the efficiency of solar cells. Among the many nanomaterials, zinc oxide nanorod has been the most extensively studied one because it is transparent to visible light, has high refractive index, easy to manufacture, non-toxic and friendly to environment.
In this study, large-area zinc-oxide nanorods array were grown by electrodeposition. The results show that zinc-oxide nanorods array with good crystalline quality can be obtained at low-temperature. In addition, we also found that ZnO nanorods of different morphologies can be obtained by controlling growth condition such as growth time, pressure, concentration of Zn2+, applied current, dissolved gas, etc. Following the growth of ZnO nanorods, ZnO/In2S3/CuInS2 (CIS) core-shell nanorods array were prepared by successive ionic layer adsorption and reaction (SILAR) method. In the optical measurements, the core-shell CIS nanorods array shows a remarkable absorption from visible to near-infrared light. Only 0.15% of visible light can transmit through a 20nm-thick CIS shell which was grown on the top of ZnO nanorods array. In addition, from photoelectrical measurements, we find that the ZnO/ In2S3/CuInS2 system has the desired probability for making an useful optoelectronic devices. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T05:09:27Z (GMT). No. of bitstreams: 1 ntu-99-R97222050-1.pdf: 9410534 bytes, checksum: e2efaeed4fd3cea061937beca65ee426 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | 口試委員會審定書 i
致 謝 ii 摘 要 iii Abstract iv 目 錄 v 圖目錄 vii 第1章 緒論 1 1.1 引言 1 1.1.1 一維半導體奈米結構簡介 1 1.1.2 氧化鋅奈米柱 1 1.1.3 太陽能電池 2 1.1.4 核殼奈米柱結構於太陽能電池上的優點 2 1.2 研究動機與目的 3 第2章 基本原理介紹 4 2.1 太陽能電池 4 2.1.1 pn接面 4 2.1.2 pn接面電流 7 2.1.3 半導體缺陷造成的載子複合行為 9 2.1.4 逆向偏壓產生電流和順向偏壓複合電流 12 2.1.5 異質pN接面 13 2.2 總結 15 第3章 實驗方法 16 3.1 電鍍法成長氧化鋅奈米柱 16 3.1.1 電鍍氧化鋅奈米柱步驟 16 3.2 連續離子層吸附反應法成長薄膜材料 18 3.2.1 SILAR成長In2S3薄膜 19 3.2.2 SILAR成長CuInS2薄膜 20 3.3 分析儀器系統 20 第4章 結果與討論 22 4.1 電鍍法成長氧化鋅奈米柱 22 4.1.1 溫度的影響 25 4.1.2 Zn2+ 濃度的影響 26 4.1.3 電流的影響 29 4.1.4 溶解氣體的影響 30 4.1.5 其它成長環境下的各種奈米柱形貌 32 4.2 SILAR沈積CuInS2薄膜 33 4.3 ZnO/In2S3/CuInS2 核殼奈米柱陣列 37 4.3.1 核殼奈米柱陣列形貌及外觀 37 4.3.2 穿透光譜 39 4.4 pN核殼奈米柱陣列的光電流量測 41 4.4.1 電流電壓曲線 41 4.4.2 IPCE 42 4.4.3 光電流在不同偏壓下的時間響應 43 第5章 結論 46 參考文獻 47 | |
| dc.language.iso | zh-TW | |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 連續離子層吸附反應 | zh_TW |
| dc.subject | 電鍍 | zh_TW |
| dc.subject | 光偵測器 | zh_TW |
| dc.subject | 太陽能電池 | zh_TW |
| dc.subject | 二硫化銅銦 | zh_TW |
| dc.subject | 硫化銦 | zh_TW |
| dc.subject | 奈米柱陣列 | zh_TW |
| dc.subject | 核殼結構 | zh_TW |
| dc.subject | SILAR | en |
| dc.subject | solar cell | en |
| dc.subject | CuInS2 | en |
| dc.subject | In2S3 | en |
| dc.subject | core-shell | en |
| dc.subject | ZnO | en |
| dc.subject | photodetector | en |
| dc.subject | nanorods array | en |
| dc.subject | electrodeposition | en |
| dc.title | 以電鍍法成長氧化鋅奈米柱陣列及應用於製成太陽能電池之研究 | zh_TW |
| dc.title | A study on the zinc oxide nanorods array grown by electrodeposition and its application in making solar cell array | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳永芳,梁啟德 | |
| dc.subject.keyword | 奈米柱陣列,氧化鋅,核殼結構,硫化銦,二硫化銅銦,太陽能電池,光偵測器,電鍍,連續離子層吸附反應, | zh_TW |
| dc.subject.keyword | nanorods array,ZnO,core-shell,In2S3,CuInS2,solar cell,photodetector,electrodeposition,SILAR, | en |
| dc.relation.page | 52 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-07-26 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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