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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳奕君(I-Chun Cheng) | |
dc.contributor.author | Huai-An Chin | en |
dc.contributor.author | 秦懷安 | zh_TW |
dc.date.accessioned | 2021-06-15T04:45:20Z | - |
dc.date.available | 2015-08-09 | |
dc.date.copyright | 2010-08-09 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-08-06 | |
dc.identifier.citation | [1] Takashi Minemoto, Takayuki Negami, Shiro Nishiwaki, Hideyuki Takakura, Yoshihiro Hamakawa, “Preparation of Zn 1-x Mg x O films by radio frequency magnetron sputtering,” Thin Solid Films, vol.372 ,2000, pp. 173-176
[2] Chul-Hwan Choi, Seon-Hyo Kim, “Effects of post-annealing temperature on structural, optical,and electrical properties of ZnO and Zn 1-x Mg x O films by reactive RF magnetron sputtering,” Journal of Crystal Growth, vol.283, 2005, pp.170–179 [3] A. Ohtomo, M. Kawasaki, Y. Sakurai, I. Ohkubo, R. Shiroki, Y. Yoshida, T. Yasuda, Y. Segawa, H. Koinuma, “Fabrication of alloys and superlattices based on ZnO towards ultraviolet laser,” Materials Science and Engineering B56, 1998, pp. 263-266 [4] Xiaochuan Xia, Wang Zhao, Yuantao Jian, Xiangping Li, Xin Dong, Yongguo Cui, Yuantao Zhang, Xiujun Fang, Guoxing Li, Huichao Zhu, Yan Ma, Baolin Zhang, Guotong Du, ” The structure and optical characters of the ZnO film grown on GaAs/Al 2 O 3 substrate,” Applied Surface Science, vol. 255, 2009, pp. 6313–6317 [5] Mineo Hiramatsu, Koichi Imaeda, Noriaki Horio, and Masahito Nawata, “Transparent conducting ZnO thin films prepared by XeCl excimer laser ablation,” J. Vac. Sci. Technol. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45738 | - |
dc.description.abstract | 氧化鋅在光學元件上的應用極具潛力, 不過導電度在元件表現方面的仍是一個關鍵因素。先前研究指出在單晶氧化鋅鎂/氧化鋅異質結構內的極化效應使載子侷限在氧化鋅鎂/氧化鋅之介面,形成二維電子氣體,使得異質介面電性有數量級的改善。
本篇論文主要是探討多晶氧化鋅鎂/氧化鋅異質結構內的極化效應以及極化效應對電性的影響。本實驗之多晶氧化鋅薄膜是由射頻濺鍍方式所成長。成長完後利用高溫退火改善結晶程度,氧化鋅鎂則繼續成長在氧化鋅薄膜上。氧化鋅鎂/氧化鋅介面之電性量測證實了當氧化鋅鎂疊加上氧化鋅後,電性有了兩到三個數量級的改善,證明了即使在多晶系統內,極化效應所產生的載子能藉由屏蔽效應大大降低晶界能障,並大幅改善異質結構的電導率。 除了雙層膜之氧化鋅鎂/氧化鋅異質結構外,本實驗也採用鋁參雜之氧化鋅鎂作為調變摻雜薄膜,引入氧化鋅鎂/氧化鋅鎂摻雜鋁/氧化鋅鎂/氧化鋅之多層膜調變摻雜結構,希望能藉由氧化鋅鎂摻雜鋁之薄膜提供額外載子以注入二維電子侷限區域,更進一步改善電性。實驗結果發現,當作為緩衝層的氧化鋅鎂內含鎂含量較低時,相對雙層膜異質結構,調變摻雜的效果可以再改善接近一個數量級。但隨著緩衝層鎂含量增加,調變摻雜不再有明顯效果。 此性質將能進一步應用於高速薄膜電晶體的發展上。 | zh_TW |
dc.description.abstract | ZnO has shown great potential for application in optoelectronic devices and its conductivity is one of the key issues in device performances. Previous researches show that polarization effect existing in single-crystalline MgZnO/ZnO heterostructure results in carrier confinement at MgZnO/ZnO interface. The two-dimensional electron gas (2DEG) forming at the interface improves the electrical conductance to two to three orders of magnitude. In this thesis, the polarization effect on the electrical roperties of “polycrystalline“ MgZnO/ZnO heterostructure will be studied. ZnO film is grown by rf-sputtering and post-annealing is introduced to reinforce the grain formation. A thin layer of MgZnO is then deposited upon ZnO at room temperature. The electrical conductance of MgZnO/ZnO shows two to three orders of magnitude of improvement compared to ZnO single layer, confirming that polarization effect enhances electrical properties even in polycrystalline system.
MgZnO:Al is used as modulation doping layer in the modulation doping structure, MgZnO/MgZnO:Al/MgZnO/ZnO, in the hope to introduce carrier from MgZnO:Al into 2DEG confinement region. The result indicates that modulation doping shows strongest improvement when Mg content of MgZnO buffer layer is low; while the improvement is less obvious as the Mg content increases. The heterostructure can be further applied in high-electron-mobility-transistor. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T04:45:20Z (GMT). No. of bitstreams: 1 ntu-99-R97941059-1.pdf: 706850 bytes, checksum: a5b4d4259441fca6f9c0365642438484 (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | Acknowledgement I
摘要 II Abstract III Content IV Figure Content VI Table Content VIII Chapter 1 Introduction 1 1.1 ZnO history and properties 1 1.2 Heterojunction structure and mechanism 2 1.2.1 Scattering mechanisms 2 1.2.2 Two-dimensional electron gas (2DEG) and polarization effect 4 1.2.3 Researches in epitaxial heterojunction structure 6 1.2.4 Screening effect 8 1.2.5 Modulation doping 9 1.3 Motivation 10 1.4 Dissertation organization 11 Chapter 2 Film deposition and characterization techniques 13 2.1 Substrate cleaning 13 2.1.1 Piranha cleaning 13 2.1.2 Detergent 13 2.1.3 Silicon wafer cleaning. 13 2.2 Deposition technique 13 2.2.1 Film deposition – RF-Sputtering 13 2.2.2 Metal deposition-Electron beam evaporation 15 2.3 Post-treatment 16 2.3.1 Post-annealing 16 2.3.2 Rapid thermal annealing 16 2.4 Characterization 17 2.4.1 Surface profiler 17 2.4.2 Electrical properties 17 2.4.2.1 Two-Probe measurement 17 2.4.2.2 Hall measurement-Van der Pauw method 17 2.4.2.3 Low temperature measurement 20 2.4.3 Transmission electron microscopy 21 2.4.4 Secondary ion mass spectroscopy 21 Chapter 3 Structure fabrication and experimental procedure 23 3.1 Heterojunction structure fabrication process 23 3.2 Modulation doping 26 Chapter 4 Results and discussion 28 4.1 Crystallinity and structure analysis 28 4.1.1 Crystallinity v.s. annealing temperature 28 4.1.2 Crystallinity with/without post-annealing 30 4.1.3 Structural analysis 30 4.2 Composition analysis 31 4.3 Heterojunction electrical properties 32 4.3.1 The effect of capping layer thickness 32 4.3.2 The effect of Mg content in capping layer 33 4.3.3 Mobility and carrier concentration 34 4.3.4 Low temperature measurement 36 4.4 Heterojunction structure with modulation doping 37 4.4.1 The effect of modulation doping layer position 37 4.4.2 The effect of Al content in modulation doping layer 38 4.4.3 The effect of Mg content in modulation doping layer 40 4.4.4 The effect of Mg content in barrier and capping layer 43 4.4.5 Post-treatment effect 45 Chapter 5 Conclusion and future work 48 Chapter 6 References 50 Chapter 7 List of publications related to thesis 56 Figure Content Fig 1.1 Schematic of grain boundary 3 Fig 1.2 Band diagram under polarization effect in GaAs/AlGaAs 5 Fig 1.3 Grain boundary potential(a)without screen effect(b)with serene effect by external doping[44] 9 Fig 1.4 schematic of modulation doping[45] 10 Fig 2.1 Schematic of Sputter 14 Fig 2.2 Schematic of Electron-beam evaporation 15 Fig 2.3 General geometry for Hall measurement 18 Fig. 3.1 Process flow of sample preparation for I-V measurement 24 Fig. 3.2 Process flow of sample preparation for Hall measurement 25 Fig. 3.3 Process flow of sample preparation for modulation doping 27 Fig. 4.1 XRD pattern under different annealing temperature 29 Fig. 4.2 XRD pattern for sample with/without post-annealing 30 Fig. 4.3 TEM figure for ZnO (a)as-deposited (b)annealed at 600℃ 31 Fig. 4.4 sheet resistance of heterojunction with Mg0.15Zn0.85O thickness 32 Fig. 4.5 Sheet resistance of heterojunction v.s. MgxZn1-xO thickness 34 Fig. 4.6 Mobility and sheet carrier concentration v.s. Mg content 35 Fig. 4.7 Sheet resistance calculated from mobility and sheet carrier concentration v.s. Mg content 35 Fig. 4.8 Sheet carrier concentration of Mg0.3Zn0.7O/ZnO heterojunction v.s.temperature 36 Fig. 4.9 Barrier layer (MgZnO) thickness v.s. Heterojunction sheet resistance 37 Fig. 4.10 Heterojunction sheet resistance and sheet carrier density with modulation doping of different Al content 39 Fig. 4. 11 Sheet resistance of modulation doping structure with Mg = 15%, Al = 3, 4, 5% in modulation doping layer 39 Fig. 4.12 Heterojunction sheet resistance and sheet carrier density with modulation doping of different Mg content 41 Fig. 4.13 Heterojunction sheet resistance and carrier density with different Mg in the barrier and capping layers 45 Fig. 4. 14 XRD pattern of modulation doping heterostructure before (2 samples) and after RTA. Inserting figure is the XRD pattern between 34o to 36o. 47 Table Content Table 2.1 Recipe for E-beam evaporation 16 Table 4.1 Grain size v.s. annealing temperature 29 Table 4.2 Mg content in target and corresponding content in film by SIMS measurement 31 Table 4.3 Heterojunction resistance and carrier density with modulation doping of different Al content and without modulation doping 38 Table 4.4 Heterojunction resistance and carrier density with modulation doping of different Mg content 41 Table 4.5 Electrical properties of MgZnO:Al thin film(~100 nm) 42 Table 4.6 Heterojunction resistance and carrier density with different Mg in the barrier and capping layers 44 Table 4.7 Heterojunction resistance with modulation doping before and after RTA 46 | |
dc.language.iso | en | |
dc.title | 氧化鋅鎂/氧化鋅多晶異質結構系統之電性探討 | zh_TW |
dc.title | Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳建彰(Jian-Zhang Chen),吳育任(Yuh-Renn Wu),李偉立(Wei-Li Lee) | |
dc.subject.keyword | 極化效應,氧化鋅鎂/氧化鋅,異質結構,二維電子氣體, | zh_TW |
dc.subject.keyword | Polarization effect,MgZnO/ZnO,heterostructure,two-dimensional electron gas, | en |
dc.relation.page | 56 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-08-06 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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ntu-99-1.pdf 目前未授權公開取用 | 690.28 kB | Adobe PDF |
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