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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45700完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳忠幟 | |
| dc.contributor.author | Shiuan-Iou Lin | en |
| dc.contributor.author | 林炫佑 | zh_TW |
| dc.date.accessioned | 2021-06-15T04:44:49Z | - |
| dc.date.available | 2013-08-18 | |
| dc.date.copyright | 2010-08-18 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-08-08 | |
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Jeong, et al., 'High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel,' Applied Physics Letters, SEP 10 2007. [9] H. Q. Chiang, R. L. Hoffman, and D. A. Keszler, 'High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer ', Applied Physics Letters, 86, 013503 (2004). [10] RT Fulks, W Yao, CC Tsai, 'Method of manufacturing active matrix LCD using five masks,' US Patent 5,621,556, 1997. [11] Tean-Sen Jen, Dyi-Chung Hu, 'Back-channel-etch process for forming TFT matrix of LCD with reduced masking,' US Patent 6,406,928, 2000. [12] Jae-Yong Park, Jae-Kyun Lee, Jung-Hoan Kim, 'Method of fabricating thin film transistor,' US Patent 6,605,494, 2000. [13] H.Borkan, RCA Rev. 92, 661 (1963). [14] W. Schottky, 'Semiconductor Theory of the Blocking Layer (in German), ' Naturwissenschaften 26, 843, Dec. 1938. [15] Raymond T. Tung, 'Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces,' Phys. Rev. Lett. 84, 6078–6081 (2000) [16] F.A. Padovani and R. Stratton, 'Field and Thermionic-Field Emission in Schottky Barriers, ' Solid-State Electron. 9, 695–707, July 1966. [17] Dieter K. Schroder, Semiconductor Material and Device Characterization third ed, John Wiley & Sons, New Jersey, p.128-133(2006). [18] W. Cheong, et al., 'Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor,' Thin Solid Films, pp. 4094-4099, MAY 29 2009. [19] H. Seo, et al., 'Reliable Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with TiOx Passivation Layer,' Electrochemical and Solid State Letters, pp. H348-H351, 2009. [20] Jong H. Na, M. Kitamura, and Y. Arakawa, 'High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes,' Applied Physics Letters, 93, 063501 (2008) [21] M. Kim, et al., 'High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper,' Applied Physics Letters, MAY 21 2007. [22] W. Kim, et al., 'Copper source/drain electrode contact resistance effects in amorphous indium-gallium-zinc-oxide thin film transistors,' Physica Status Solidi-Rapid Research Letters, pp. 239-241, OCT 2009. [23] Y. Shimura, K Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, ' Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes', Thin Solid Films, 516, pp. 5899-5902 (2008). [24] Dieter K. Schroder, Semiconductor Material and Device Characterization third ed, John Wiley & Sons, New Jersey, p.139-154(2006). [25] G. K. Reeves and H. B. Harrison., 'Obtaining the specific contact resistance from transmission line model measurements', IEEE Electron Device Lett., vol. EDL-3., pp.111-113 (1982). [26] T. SCHREYER and K. SARASWAT, 'A TWO-DIMENSIONAL ANALYTICAL MODEL OF THE CROSS-BRIDGE KELVIN RESISTOR,' Ieee Electron Device Letters, pp. 661-663, DEC 1986. [27] Stavitski, N. and Klootwijk, J.H. and van Zeijl, H.W. and Kovalgin, A.Y. and Wolters, R.A.M. 'A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances.' IEEE Conference on Microelectronic Test Structures, pp. 199-204 , 24-28 Mar 2008 [28] M. Ono, et al., 'A simple approach to understanding measurement errors in the cross-bridge Kelvin resistor and a new pattern for measurements of specific contact resistivity,' Solid-State Electronics, pp. 1325-1331, SEP 2002. [29] W.M. Loh, S.E. Swirhun, T.A. Schreyer, R.M. Swanson and K.C. Saraswat,“Modeling and Measurement of Contact Resistances,” IEEE Trans. Electron Dev. ED-34, 512–524, March 1987. [30] P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato, 'Toward High-Performance Amorphous GIZO TFTs', Journal of The Electrochemical Society, 156 (3), pp.161-168 (2009). [31] Dieter K. Schroder, Semiconductor Material and Device Characterization third ed, John Wiley & Sons, New Jersey, p.14-18 (2006). [32] Dieter K. Schroder, Semiconductor Material and Device Characterization third ed, John Wiley & Sons, New Jersey, p.579-584 (2006). [33] J. Jeong, et al., 'Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors,' Applied Physics Letters, SEP 22 2008. [34] D. Gosain and T. Tanaka, 'Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination,' Japanese Journal of Applied Physics, MAR 2009. [35] Herbert B. Michaelson, 'The work function of the elements and its periodicity', J. Appl. Phys., 48, 4729 (1977). [36] J. Park, et al., 'Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment,' Applied Physics Letters, JUN 25 2007. [37] D.-G. Yoo, S.-H. Nam, M.H. Kim, S.H. Jeong, H.-G. Jee, H.J. Lee, N.-E. Lee, B.Y. Hong, Y.J. Kim, D. Jung and J.-H. Boo,'Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices, ' Surface and Coatings Technology, Volume 202, Issues 22-23, Pages 5476-5479, 30 August 2008 [38] C. Wu, et al., 'Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors,' Journal of Display Technology, pp. 515-519, DEC 2009. [39] Y Liu, A Shanware, L Colombo, R Dutton, 'Modeling of Charge Trapping Induced Threshold-Voltage Instability in High-k Gate Dielectric FETs,' IEEE Electron Device Letters, 2006 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45700 | - |
| dc.description.abstract | 氧化物半導體近年來相當迅速地發展，因為其同時具有透明、可室溫成長、高載子遷移率等等有趣特性，使得氧化物半導體具有許多應用上的高度潛力，其中又以非晶態氧化銦鎵鋅具有高均勻度、低製程溫度與再現性佳等優勢，為目前最被看好應用在顯示器工業的氧化物半導體材料，甚至有機會取代現有的非晶矽薄膜電晶體。
電晶體元件中，源極、汲極的導體電極與主動層半導體接觸，是一個標準的金屬─半導體接面，常會形成能障，降低甚至破壞元件的應有的性能，因此定量出介面的接觸電阻並設法避免接觸能障是相當重要的。 在本論文中，定量研究了非晶態氧化銦鎵鋅與各種電極材料之間的接觸電阻。首先，以TLM測詴結構量測分析了非晶態氧化銦鎵鋅與鉬、鈦、銅以及氧化銦錫電極之間的特徵接觸電阻率，比較不同電極材料的差異並探討載子濃度造成的影響，並分別探討了接觸型態、熱退火處理以及電漿處理的效應。接著，使用並討論了結合TLM與CER的量測架構以及一維與二維CBKR測詴結構分析萃取特徵接觸電阻率的方法，同時討論各種測詴結構與量測方式應用於氧化物半導體薄膜電晶體的實用性。論文的最後，應用了前面對於接觸電阻的各種結果，實際製作出使用不同接觸電極技術的非晶態氧化銦鎵鋅薄膜電晶體元件。 | zh_TW |
| dc.description.abstract | Oxide semiconductors have gained much attention in recent years due to their interesting characteristics such transparency, room-temperature growth and high mobility. These benefits render their highly potential for many applications. Amorphous indium gallium zinc oxide (a-IGZO) has the highly potential for applications in thin-film transistor (TFT) industry among all oxide semiconductor materials, because of its high uniformity, low fabrication temperature and good reproducibility.
For TFT devices, energy barriers will exist at the interfaces of conductor- semiconductor contact like source/drain regions. High contact resistance will degrade the performance of devices. Therefore, it is important to be able to measure contact resistance and to avoid the conditions of poor contact. In this thesis, we measured the contact resistance between a-IGZO and electrode materials, such as Mo, Ti, Cu and indium tin oxide (ITO). First, we measured the specific contact resistivity by the TLM test structure. We discuss the influences of electrode materials, carrier concentrations, contact type, annealing treatment and plasma treatment. Then, we compared varies structures and methods of extracting specific contact resistivity, such as combination of TLM and CER, one dimension CBKR, and two dimension CBKR. Finally, we use the previous results to fabricate a-IGZO TFTs with different contact technologies. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T04:44:49Z (GMT). No. of bitstreams: 1 ntu-99-R97941032-1.pdf: 3153124 bytes, checksum: a36d5cc6c6dc19a2694218e1d70c7a8d (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | 摘要 ...................................................................................................................................i
ABSTRACT .................................................................................................................... ii 目錄 ................................................................................................................................ iii 第1章 序論 ................................................................................................................ 1 1.1 氧化物半導體簡介 .......................................................................................... 1 1.2 薄膜電晶體結構與操作特性 .......................................................................... 2 1.3 金屬─半導體接面與接觸電阻簡介 .............................................................. 4 1.4 研究動機 .......................................................................................................... 6 1.5 論文結構 .......................................................................................................... 8 第2章 接觸電阻理論模型與量測分析原理 .......................................................... 14 2.1 前言 ................................................................................................................ 14 2.2 接觸電阻理論模型 ........................................................................................ 14 2.2.1 一維傳輸線理論模型 ......................................................................... 14 2.2.2 Contact Front Resistance (CFR) ......................................................... 15 2.2.3 Contact End Resistance (CER) ........................................................... 16 2.2.4 Cross Bridge Kelvin Resistance (CBKR) ........................................... 16 2.3 接觸電阻量測分析原理 ................................................................................ 17 2.3.1 Transfer Length Method (TLM)量測分析原理 ................................. 17 2.3.2 結合TLM與CER之量測分析原理 ................................................. 18 2.3.3 一維CBKR量測分析原理 ................................................................ 20 2.3.4 二維CBKR量測分析原理 ................................................................ 21 2.4 小結 ................................................................................................................ 22 第3章 接觸電阻測詴結構製作與量測分析方法 .................................................. 28 3.1 前言 ................................................................................................................ 28 3.2 材料鍍膜成長 ................................................................................................ 28 3.2.1 非晶態氧化銦鎵鋅鍍膜成長 ............................................................. 28 3.2.2 氮化矽鍍膜成長 ................................................................................. 28 3.2.3 電極材料鍍膜成長 ............................................................................. 29 3.3 材料特性量測分析方法 ................................................................................ 29 3.3.1 Van der Pauw與霍爾量測 .................................................................. 29 3.3.2 橢圓偏振儀量測 ................................................................................. 30 3.4 接觸電阻測詴結構製作 ................................................................................ 30 3.4.1 光罩圖樣設計 ..................................................................................... 30 3.4.2 上接觸式測詴結構製作 ..................................................................... 31 3.4.3 下接觸式測詴結構製作 ..................................................................... 32 3.5 接觸電阻量測架構與分析方法 .................................................................... 33 3.5.1 探針系統與量測環境 ......................................................................... 33 3.5.2 TLM量測架構與分析方法 ............................................................... 33 3.5.3 CER量測架構與分析方法 ................................................................ 34 3.5.4 CBKR量測架構與分析方法 ............................................................. 34 3.6 小結 ................................................................................................................ 35 第4章 非晶態氧化銦鎵鋅與電極材料間接觸電阻之實驗結果 .......................... 40 4.1 前言 ................................................................................................................ 40 4.2 非晶態氧化銦鎵鋅薄膜載子濃度控制之結果 ............................................ 40 4.2.1 氧氣流量比例之調變 ......................................................................... 40 4.2.2 腔體壓力之調變 ................................................................................. 41 4.2.3 對蝕刻速率之影響 ............................................................................. 41 4.3 接觸電阻影響因素之效應探討 .................................................................... 42 4.3.1 電極材料與載子濃度之效應 ............................................................. 42 4.3.2 接觸型態之效應 ................................................................................. 43 4.3.3 熱退火處理之效應 ............................................................................. 44 4.3.4 電漿處理之效應 ................................................................................. 44 4.4 不同接觸電阻量測分析方法實際應用之結果與比較 ................................ 46 4.4.1 結合TLM與CER量測分析方法實際應用之結果 ......................... 46 4.4.2 一維CBKR量測分析方法實際應用之結果 .................................... 47 4.4.3 二維CBKR量測分析方法實際應用之結果 .................................... 47 4.4.4 不同接觸電阻量測分析方法之比較 ................................................. 48 4.5 小結 ................................................................................................................ 49 第5章 應用不同接觸電極技術之非晶態氧化銦鎵鋅薄膜電晶體元件實作 ...... 68 5.1 前言 ................................................................................................................ 68 5.2 具有高載子濃度接觸層之元件實作 ............................................................ 68 5.2.1 元件製程 ............................................................................................. 68 5.2.2 結果與討論 ......................................................................................... 69 5.3 利用電漿處理接觸區域之元件實作 ............................................................ 71 5.3.1 元件製程 ............................................................................................. 71 5.3.2 結果與討論 ......................................................................................... 72 5.4 小結 ................................................................................................................ 72 第6章 總結與未來展望 .......................................................................................... 79 6.1 總結 ................................................................................................................ 79 6.2 未來展望 ........................................................................................................ 79 參考文獻 ......................................................................................................................... 81 | |
| dc.language.iso | zh-TW | |
| dc.subject | 接觸電阻 | zh_TW |
| dc.subject | 氧化物半導體 | zh_TW |
| dc.subject | 薄膜電晶體 | zh_TW |
| dc.subject | oxide semiconductor | en |
| dc.subject | thin-film transistor | en |
| dc.subject | contact resistance | en |
| dc.title | 氧化物半導體薄膜電晶體接觸電阻之研究 | zh_TW |
| dc.title | A Study of Contact Resistance for Oxide Semiconductor Thin Film Transistors | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳介偉,謝信弘 | |
| dc.subject.keyword | 氧化物半導體,薄膜電晶體,接觸電阻, | zh_TW |
| dc.subject.keyword | oxide semiconductor,thin-film transistor,contact resistance, | en |
| dc.relation.page | 85 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-08-08 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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