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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳奕君(I-Chun Cheng) | |
dc.contributor.author | Chang-Pin Huang | en |
dc.contributor.author | 黃昌平 | zh_TW |
dc.date.accessioned | 2021-06-15T04:33:20Z | - |
dc.date.available | 2010-09-21 | |
dc.date.copyright | 2009-08-20 | |
dc.date.issued | 2009 | |
dc.date.submitted | 2009-08-19 | |
dc.identifier.citation | [1] C. G. Granqvist, Solar Energy Materials & Solar Cells 91 (2007) 1529-1598.
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45660 | - |
dc.description.abstract | 本論文探討高溫熱處理與雷射處理之透明導電ITO薄膜的特性。ITO薄膜以溶膠凝膠(sol-gel)法所製備,實驗使用無水氯化銦與四氯化錫做為前驅物,無水氯化銦溶於乙醯丙酮中,並於迴流裝置下加熱至70度持溫3小時,摻雜適量氯化錫溶於酒精溶劑中,並與氯化銦溶液待室溫下均勻混合,完成溶膠凝膠前驅液(precursor solution)的製備。藉由改善製程熱處理的條件,諸如延長前驅膜的加熱乾燥時間、氮氣還原退火、紫外光處理,可得到熱處理的ITO膜最佳電阻率為7.88×10-3Ω-cm及對應的最大載子濃度6.836×1020 cm-3;在可見光波段的平均穿透率達88%。
本論文亦利用UV固態雷射(波長355 nm)退火技術為首要的嘗試。9.09 at.%錫摻雜濃度的前驅液以浸沾法鍍在玻璃基板上,之後置於烘箱中乾燥持溫260度5小時,重複以上浸沾乾燥過程3次,以完成前驅膜的製作。以900 mJ/cm2強度雷射處理的ITO膜呈現最低電阻率5.37×10-2Ω-cm及其對應的最大載子濃度為6×1019 cm-3;在可見光波段的平均穿透率達78%以上。高比例的錫含量(34.3~19.4 at.%)被發現在雷射處理的ITO膜中,然而熱處理的ITO膜僅7.1 at.%錫含量,過高的錫含量會形成不利於導電的錫類複合物。經計算,雷射處理的ITO膜中性散射中心濃度(1.679×1021 cm-3 ~5.925×1021 cm-3)遠大於熱處理ITO膜的結果(5.748×1020 cm-3)。 | zh_TW |
dc.description.abstract | ITO thin films were deposited on Corning Eagle 2000 glass substrates using anhydrous indium trichloride dissolved in acetylacetone, followed by a refluxing process at 70 ºC for 3 hours and then mixed with tin chloride dissolved in ethanol. By modifying the thermal processes such as prolong preheating duration, introducing post-annealing in reduced atmosphere or ultraviolet illumination, ITO thin films with a minimum resistivity of 7.88×10-3Ω-cm and the corresponding maximum concentration of 6.836×1020 cm-3 by single spin coating were obtained. The average transmittance of thermally cured ITO thin films in the visible light range was above 88%.
This study also demonstrated the feasibility of an ultra low temperature (260 oC) ITO sol-gel process by 355 nm solid-state UV lasers. With the 9.09 at.% Sn dopant precursor solution, the optimized process was to preheat the triple dip-coated films at 260 oC for 5 hours, followed by laser irradiation with the fluence of 900 mJ/cm2. The minimum resistivity was 5.37×10-2Ω-cm with activated carrier concentrations of 6×1019 cm-3. The optical transmittances were comparable to those of sol-gel derived ITO thin films by thermal curing (average ~78 %; cf. the thermally cured film 79 %). An extraordinarily high tin element compositions, decreased from 34.3 to 19.4 at.% as laser fluences increased from 700 mJ/cm2 to 1000 mJ/cm2, were presented in the laser cured ITO thin films. In 500 oC thermally cured ITO thin films, only 7.1 at.% tin ratio was detected. Excess Sn ions would form complex defects by Sn (Ⅳ) and Sn (Ⅱ) which were unfavorable to electrical conduction. The calculated density of neutral scattering centers Nn ranged between 1.679×1021 cm-3 and 5.925×1021 cm-3 was nearly one order of magnitude lager than 5.748×1020 cm-3 with thermally cured ones. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T04:33:20Z (GMT). No. of bitstreams: 1 ntu-98-R96941062-1.pdf: 4134513 bytes, checksum: 0d8f89ff1ae77d8a6017c42dd75b5c99 (MD5) Previous issue date: 2009 | en |
dc.description.tableofcontents | 中文摘要 I
ABSTRACT II 謝辭 III LIST OF SYMBOLS AND UNITS IV TABLE OF CONTENTS V FIGURE CAPTIONS VIII TABLE CAPTIONS XII CHAPTER 1 INTRODUCTION 1 CHAPTER 2 FUNDAMENTALS OF TCOS 6 2.1 Transparent conducting oxides (TCO) 6 2.2 The crystal structure of ITOs 6 2.3 Electrical properties of TCOs 8 2.3.1 Grain boundary scattering 10 2.3.2 Impurity scattering 11 2.3.3 Lattice scattering 13 2.4 Optical properties of TCOs 13 2.4.1 Plasma frequency 15 2.4.2 Burstein-Moss (BM) theory 17 2.5 A review of sol-gel ITOs 18 2.5.1 Sol-gel technology 18 2.5.2 Spray pyrolysis 19 2.5.3 Spin coating 20 2.5.4 Dip coating 21 CHAPTER 3 EXPERIMENTS 25 3.1 Substrates preparation 25 3.2 Preparation of precursor solution 27 3.3 Coating and preheating for precursors 28 3.3.1 Spin coating 28 3.3.2 Dip coating 29 3.3.3 Preheating 29 3.4 Precursor curing and dopant activation 30 3.4.1 Thermal curing 30 3.4.2 UV laser irradiation 30 3.5 Post-annealing 33 3.5.1 Nitrogen anneal 33 3.5.2 Ultraviolet lamp illumination 33 3.6 Method of Characterization 33 3.6.1 X-ray diffraction (XRD) 36 3.6.2 Alpha-step surface profiler 37 3.6.3 Atomic Force Microscopy (AFM) 38 3.6.4 Scanning Electron Microscopy (SEM) 38 3.6.5 Four-point sheet resistance measurement 38 3.6.6 Van der Pauw method 39 3.6.7 UV/Vis/NIR Spectroscopy 41 3.6.8 Electron spectrometer of chemical analysis (ESCA) 41 CHAPTER 4 RESULTS AND DISCUSSION 43 4.1 The effect of precursor compositions 43 4.2 Electrical improvement by post-annealing 47 4.3 Characterization of thermally cured ITOs by single spin coating 48 4.3.1 Crystalline structure 48 4.3.2 Micro-morphology and roughness 50 4.3.3 Electrical properties 52 4.3.4 Optical properties 55 4.3.5 Surface composition 56 4.4 Characterization of thermally cured ITOs by multiple dip coating 57 4.4.1 Crystalline structure 58 4.4.2 Micro-morphology and roughness 59 4.4.2.1 Topography from AFM 59 4.4.2.2 Surface topography from SEM 61 4.4.3 Electrical properties 61 4.4.4 Optical properties 62 4.4.5 Surface composition 63 4.5 Preheating duration for laser cured sol-gel ITOs 64 4.6 Scanning pitches in laser curing process 66 4.7 Characterization of laser cured sol-gel ITOs 68 4.7.1 Crystalline structure 68 4.7.2 Micro-morphology and roughness 70 4.7.2.1 Topography from AFM 70 4.7.2.2 Surface topography from SEM 72 4.7.3 Electrical properties 76 4.7.4 Optical properties 80 4.7.5 Surface composition 82 4.8 Electron mean free path 85 4.9 Scattering center 87 CHAPTER 5 CONCLUSION AND FUTURE WORK 92 REFERENCES 94 | |
dc.language.iso | en | |
dc.title | 以熱處理與低溫雷射處理溶膠凝膠法製備之ITO透明導電膜特性分析及研究 | zh_TW |
dc.title | Characterization of Thermally Cured and Laser Cured Sol-gel ITO Thin Films | en |
dc.type | Thesis | |
dc.date.schoolyear | 97-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳志毅(Chih-I Wu),陳建彰(Jian-Zhang Chen),吳育任(Yuh-Renn Wu) | |
dc.subject.keyword | 溶膠凝膠,雷射退火,錫類複合物,氮氣還原退火, | zh_TW |
dc.subject.keyword | sol-gel,laser curing,neutral scattering centers,post-annealing, | en |
dc.relation.page | 98 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2009-08-19 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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