TCAD技術於OLED之議題：物理調變&電特性探討

Abstract

摘要: 本篇論文著眼於運用TCAD – ATLAS技術，對最為科學家們廣為探索之有機物質--- tris-(8-Hydroxyquinoline)-aluminum (Alq3)、N,N '-bis(1-naphthyl)- N,N '-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)所組成之OLED進行物理特性調變並研究其電性特性，並於文末嘗試變換電洞傳輸層(HTL)物質作更進一步之模擬。 藉由電流特性偏移及曲度改變所表現出之現象觀察，探討有機電激發光二極體之物理機制。同時，邏輯性地比對實驗數據分析物理模型，定下模擬成果結論。 旨在探討以下兩種物理機制：1. 此一元件結構下，單一載子傳輸模型之假設的準確性。藉由僅調變鋁之功函數數值，並固定其它有機材料物理特徵，作turn on Voltage及J-V curve shift之觀察；2. 其次，藉由調變Alq3之LUMO(保持HOMO相對於真空能階之維持不變)，再次觀察電性turn on Voltage及J-V curve shift之變化。 藉由經Marquart Algorithm fitting後之元件物理特性，伴隨OLED能帶指數函數陷阱之模型，探討模擬結果與實驗之間之差異。

關鍵字：電洞傳輸層、功函數、turn on Voltage、LUMO、HOMO、真空能階、Marquart Algorithm、指數函數陷阱模型

Abstract: This paper concentrate on the use of TCAD - ATLAS techniques to modulate organic light emitting diode(OLED) physical characteristics and simulated the device which is composed of tris-(8-Hydroxyquinoline)-aluminum (Alq3) - quinoline Lin Kong-based aluminum (Alq3) & N,N '-bis(1-naphthyl)- N,N '-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)(NPB). We'll discuss the physical phenomena of the mechanism in OLED by extracting the models' current density versus voltage and make comparison between the experimental data and simulated data. In the analysis of the J-V curves in each case we'll implement, we'll know the physical characteristics dependence on onset[1] voltage of device and J-V shift ralated to the thickness of devices.