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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 謝國煌 | |
dc.contributor.author | Hung-Yang Tseng | en |
dc.contributor.author | 曾宏洋 | zh_TW |
dc.date.accessioned | 2021-06-15T02:59:22Z | - |
dc.date.available | 2009-08-04 | |
dc.date.copyright | 2009-08-04 | |
dc.date.issued | 2009 | |
dc.date.submitted | 2009-07-31 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/44467 | - |
dc.description.abstract | 本研究合成了三種雙壓克力官能基之單體與兩種雙丙烯基之單體,上述五種單體皆具有高對稱性與極性低之結構,之後將之與市售之雙壓克力單體三環癸烷二甲醇二甲基丙烯酸酯互相混合後進行紫外光聚合反應,製備出共聚高分子材料,由結果顯示材料因微相分離而使材料之結構較為不緊密,並且有較大之自由體積,因此能夠得到較低之材料介電常數,而當單體混合之重量百分比接近一時共聚高分子材料能夠有較低之介電常數,最低能達到2.36。本研究亦於材料中添加了具有丙烯酸酯官能基之多面體聚矽氧烷寡聚物,此類材料因其具有孔洞之結構,添加於高分子材料後能亦可增加材料之自由體積而使介電常數能夠降至更低,此外因無機相之增加,材料於熱性質或機械性質能夠加以改善,而由結果顯示,當添加5~10phr時,介電常數可降至2.02。本研究在樹脂部分亦混合部分單官能基之單體,並因材料交聯密度之降低而會有柔軟(flexible)之性質,可使材料能應用於軟性電子材料中。本研究以最製程簡便之紫外光聚合法成功製備了低介電常數之材料,將製備時間縮短且合成溫度降低,並且於製備過程中減少了有機溶劑之使用,而由結果顯示,材料除了有低介電常數之外在熱穩定性方面也相當不錯,其中之T50IAC10SQ1材料介電常數為2.02,且其5%裂解溫度在487ºC,實為極有潛力之低介電常數材料。 | zh_TW |
dc.description.abstract | In this study, three difunctional acrylate monomers and two allyl monomers with high symmetry and low polarity were proposed and prepared. The obtained monomers were then purified and mixed with a difuntional acrylate monomer tricyclodecane dimethanol diacrylate(TDDA) to synthesize their homopolymers and copolymers by UV curing. The obtained materials have low dielectric constant about 2.36 because of the microphase separation of polymers. We can add the free space of the materials by microphase separation. After that, polyhedral oligomeric silsesquioxane (POSS) materials with acrylic functional groups were added into the polymers to form nano-hybrid materials. The dielectric constant of obtained nano-hybrid materials were found to be able to adjust from 2.36 to 2.0 for the cube structure of POSS. Besides, two kinds of monofuctional momomers were also used to prepare the copolymers. Because of the lower crosslinking density, the copolymers would have flexible property. The copolymers or hybrid materials not only have low dielectric constants but also have good thermal stability. The material T50IAc10SQ1 possessed low dielectric constant of 2.02 at 1MHz and high 5wt% degretation temperature (487ºC). | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T02:59:22Z (GMT). No. of bitstreams: 1 ntu-98-R96549027-1.pdf: 17054341 bytes, checksum: c8b7a8eef08d49a3d57698f71c64db1a (MD5) Previous issue date: 2009 | en |
dc.description.tableofcontents | 摘要 I
ABSTRACT II 目錄 III 表目錄 VII 圖目錄 IX 第一章 緒論 1 1-1 前言 1 1-2 積體電路發展需求 3 1-3 有機高分子介電材料發展 4 1-4 研究目的 4 第二章 文獻回顧 6 2-1 低介電常數材料介紹與分類 6 2-1-1 材料介電特性與極化現象 6 2-1-2 低介電(Low k)材料基本特性與要求 9 2-2-3 各種低介電材料介紹 10 2-2-3-1 二氧化矽(Silicon dioxide、SiO2) 13 2-2-3-2 氟化二氧化矽(Fluorinated SiO2、FSG) 14 2-2-3-3 奈米多孔性二氧化矽(Porours silica) 14 2-2-3-4 矽氧烷類(Silsesquioxane、SSQ)介電材料 16 2-2-3-5 氟化聚亞醯胺(Fluorinated polyimide、FPI)與多孔性聚亞醯胺 17 2-2-3-6 聚亞芳香醚(Polyarylene ether、PAE) 19 2-2-3-7 苯并環丁烷(Benzoyclobutene、BCB)類高分子材料 19 2-2-3-8 SiLK 20 2-2 有機/無機混成材料 22 2-2-1 複合材料(Composite)與混成材料簡介 22 2-2-2 多面體倍半矽氧烷寡聚物/高分子奈米混成材料(POSS/Polymer) 24 2-2-2-1 多面體聚矽氧烷寡聚物 24 2-2-2-2 POSS簡介 25 2-2-2-3 POSS與高分子材料之混合 26 2-3 光聚合機制 27 2-3-1 自由基鏈鎖反應(Free radical chain reaction) 27 2-3-2 光聚合反應 30 2-4 紫外光可聚合丙烯酸樹脂 33 第三章 實驗方法與原理 36 3-1 實驗藥品 36 3-2 實驗儀器 41 3-3 實驗流程與步驟 43 3-3-1 實驗總流程 43 3-3-2 材料之命名 44 3-3-2-1 紫外光聚合單體之命名 44 3-3-2-2 紫外光聚合高分子混成材料之命名 45 3-3-3 雙丙烯酸酯單體之合成 46 3-3-4 雙丙烯單體之合成 47 3-3-5 紫外光聚合高分子薄膜材料 48 3-6 實驗監測與材料性質分析 49 3-6-1 液態超導氫核磁共振儀(H1-NMR)測試 49 3-6-2 熱重損失分析儀(TGA)測試 50 3-6-3 微差掃描熱卡計(DSC)測試 50 3-6-4 熱機械分析儀(Thermomechanical analyzer 、TMA)量測 50 3-6-5 精密型電性分析儀(LCR meter)量測 51 3-6-6 掃描試電子顯微鏡(SEM)分析 51 3-6-7 材料柔軟度(Flexibility)測試 52 第四章 結果與討論 53 4-1 雙官能基單體合成之討論 53 4-1-1 二對酚基丙烷雙丙烯酸酯(IAc) 53 4-1-2 二羥基二苯醚雙丙烯酸酯(OAc) 53 4-1-3 二羥基聯苯雙丙烯酸酯(PAc) 53 4-1-4 雙丙烯基二對酚基丙烷(IAl) 53 4-1-5 雙丙烯基二羥基二苯醚(OAl) 54 4-2 熱重損失分析儀(TGA)分析 54 4-2-1 雙丙烯酸酯共聚高分子材料 54 4-2-2 雙丙烯/雙丙烯酸酯共聚高分子材料 56 4-2-3 多面體聚矽氧倍半寡聚物/雙丙烯酸酯 57 4-2-4 單官能基單體/雙丙烯酸酯共聚高分子材料 58 4-2-5 共聚高分子/多面體倍半矽氧烷寡聚物之混成材料 59 4-2-6 TGA分析與聚合反應之討論 60 4-3 微差熱掃描卡計儀(DSC)分析 61 4-3-1 高交聯密度(Highly crosslink)之高分子材料 61 4-3-2 單官能基/丙烯酸酯/SQ1之有機/無機混成材料 61 4-4 微差熱掃描卡計儀(TMA)分析 63 4-4-1 雙丙烯酸酯共聚高分子 63 4-4-2 雙丙烯酸酯/SQ1之有機/無機混成材料 64 4-4-5 單官能基單體/雙丙烯酸高分子材料 65 4-4-4 共聚高分子/SQ之有機/無機混成材料 66 4-5 電性分析儀(LCR表)量測與介電常數(K)之討論 68 4-5-1 雙丙烯酸酯共聚高分子材料 68 4-5-2 雙丙烯酸酯/多面體倍半聚矽氧烷寡聚物之混成材料 70 4-5-3 單官能基單體/雙丙烯酸酯共聚高分子材料 72 4-5-4 共聚高分子/多面體倍半聚矽氧烷寡聚物之混成材料 73 4-6 材料柔軟度彎曲測試 74 4-7 材料脆斷面形態觀測 78 4-7-1 雙丙烯酸酯共聚高分子 78 4-7-2 單官能基單體/雙丙烯酸酯共聚高分子 78 第五章 結論 79 參考文獻 108 | |
dc.language.iso | zh-TW | |
dc.title | 高對稱性丙烯酸樹脂之合成與其應用於低介電奈米混成材料之研究 | zh_TW |
dc.title | Synthesis of Highly Symmetrical Acrylate Resins and their Applications for Nano Hybrids with Low Dielectric Constant Materials | en |
dc.type | Thesis | |
dc.date.schoolyear | 97-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 韓錦鈴,王怡仁,邱文英 | |
dc.subject.keyword | 紫外光聚合,壓克力樹脂,多面體倍半聚矽氧烷寡聚物,低介電常數, | zh_TW |
dc.subject.keyword | UV curing,acrylate,POSS,low dielectric constants, | en |
dc.relation.page | 114 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2009-07-31 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 高分子科學與工程學研究所 | zh_TW |
顯示於系所單位: | 高分子科學與工程學研究所 |
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