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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李嗣涔(Si-Chen Lee) | |
| dc.contributor.author | Chen-Yun Wang | en |
| dc.contributor.author | 王晨昀 | zh_TW |
| dc.date.accessioned | 2021-06-15T02:22:58Z | - |
| dc.date.available | 2009-08-20 | |
| dc.date.copyright | 2009-08-20 | |
| dc.date.issued | 2009 | |
| dc.date.submitted | 2009-08-18 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/43532 | - |
| dc.description.abstract | 本篇論文成功的利用化學氣相沉積法(CVD)經由氣-液-固相 (VLS)的成長機
制,並且在成長過程中加上電場得到矽奈米線p-i-n 接面,論文首先探討和矽奈米線 長度與成長時間的關係,之後再從一系列的分析來了解矽奈米線的結構及電子特 性,並且在經由後段處理後使雜訊變小電性變佳,接著重複量測p-i-n 矽奈米線的電 子特性,最後再由靜電原子力顯微鏡(EFM)來定義所成長的矽奈米線的p 型,.i 型和 n 型的接面位置. | zh_TW |
| dc.description.abstract | The electric-field directed growth of silicon nanowire (SiNWs) p-i-n junction
was fabricated successfully by chemical vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system. In this thesis, the length of SiNWs as a function of growth time was first investigated. Then the electric and structure properties of the SiNWs were measured using a series of analysis tools. The growth mechanism and electrical characteristics of SiNWs p-i-n junction are investigated and explained. .the repeated I-V measurement of p-i-n junction SiNWs are also demonstrated. In the end, the electrostatic force microscopy (EFM) was used to define the position of p-I and i-n junctions in the SiNWs. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T02:22:58Z (GMT). No. of bitstreams: 1 ntu-98-R96943101-1.pdf: 5708464 bytes, checksum: cf2700c5b4042291e569ad9778ae4187 (MD5) Previous issue date: 2009 | en |
| dc.description.tableofcontents | Contents
Chapter 1 Introduction..............................................................................1 Chapter 2 Experimental............................................................................4 2.1 Deposition system.....................................................................................................4 2.2 Preparation...............................................................................................................6 2.3 Deposition Procedures.............................................................................................6 2.4 Measurement Techniques........................................................................................7 2.4.1 Current – Voltage characteristics....................................................................7 2.4.2 Thickness Measurement of buffer SiO2.........................................................8 2.4.3 Thickness Measurement of Metal electrodes..................................................8 2.4.4 Characterization of Silicon Nanowires...........................................................8 Chapter 3 The Electric-Field-Directed Growth of p-type, p-i-n Junction Silicon Nanowires...................................................................10 3.1 Vapor-Liquid-Solid (VLS) Mechanism................................................................12 3.1.1 VLS- assisted silicon nanowire growth.........................................................12 3.1.2 The role of the metal catalyst.........................................................................17 3.2 Electric-Field-Directed Growth of Silicon Nanowires........................................17 3.3 Sample Preparation...............................................................................................23 3-4 Results and Discussion..........................................................................................29 3.4.1 The growth of p-type SiNWs and the ohmic contact formation.....................29 3.4.2 The growth of n-type SiNWs and the ohmic contact formation.....................32 3.4.3 The relationship between deposition time and the length of SiNWs..............33 3.4.3 The growth of p-i-n junction SiNWs………………………………………….39 Chapter4 Electrical characteristics and EFM measurement of p-i-n junction SiNWs......................................................................59 4.1 Sample preparation before the electrical measurement.....................................59 4.2 Results.....................................................................................................................60 4.2.1 Repeated I-V measurement and corresponding SEM images........................60 4.2.2 Electrostatic force microscopy (EFM) measurement......................64 Chapter 5 Conclusions.............................................................................76 Reference..................................................................................................78 Appendix A Working Principle of EFM.................................................82 | |
| dc.language.iso | zh-TW | |
| dc.subject | 矽奈米線 | zh_TW |
| dc.subject | Silicon Nanowire | en |
| dc.title | p-i-n矽奈米線元件的成長及特性 | zh_TW |
| dc.title | The Growth and Characteristics of p-i-n Silicon Nanowire Device | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 97-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林浩雄(Hao-Hsiung Lin),林致廷(Chih-Ting Lin),陳敏璋(Min-Jaug Chen) | |
| dc.subject.keyword | 矽奈米線, | zh_TW |
| dc.subject.keyword | Silicon Nanowire, | en |
| dc.relation.page | 86 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2009-08-18 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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