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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/42295完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任 | |
| dc.contributor.author | Han-Wei Yang | en |
| dc.contributor.author | 楊漢威 | zh_TW |
| dc.date.accessioned | 2021-06-15T00:58:16Z | - |
| dc.date.available | 2009-08-08 | |
| dc.date.copyright | 2008-08-08 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-08-02 | |
| dc.identifier.citation | [1] E. Schubert, LightEmittingDiodes.
Cambridge, 2007. [2] [Online]. Available: http://www.mtmi.vu.lt/pfk/funkc dariniai/nanostructures/quant structures.htm [3] [Online]. Available: http://www.soton.ac.uk/ engmats/ xtal/deformation/control.htm [4] G. B. Stringfellow, “Miscibility gaps in quaternary III V alloys,” Journal of Crystal Growth, vol. 58, pp. 194–202, 1982. [5] J. Singh, Electronic and Optielectronic Properties of Semiconductor Structures. Cambridge, 2003. [6] F. Bernardini and V. Fiorentini, “Spontaneous polarization and piezoelectric constants of IIIV nitrides,” Phys. Rev. B, vol. 56, pp. R10 024–R10 027, 1997. [7] O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN heteroand quantum well structures,” Journal of Physics, vol. 14, p. 3399, 2002. [8] V. Davydov, A. Klochikhin, V. Emtsev, S. Ivanov, V. Vekshin, F. Bechstedt, J. Furthmller, a. A. H. H. Harima, and A.V. Mudryi, A. Yamamoto, J. Aderhold, J. Graul, and E. Haller, “Band Gap of InN and InRich InGaN alloys,” Physica Status Solidi (b), vol. 230, pp. R4 – R6, 2002. [9] H. Jiang, “Strain induced physical phenomena in InGaAs/GaAs And InGaN/GaN heterostructures,” Ph.D. dissertation, Univer, sityofMichigan,1999. [10]J.K.Sheu,G.C.Chi,Y.K.Su,C.C.Liu,C.M.Chang,W.C.Hung,andM.J.Jou,“LuminescenceofanInGaN/GaNmultiplequantumwelllightemittingdiode,” SolidStateElectronicsvol. 44,p.1055,2000. [11] Y.K. KUO and W.W. LIN, “BandGap Bowing Parameter of the AlInN Derived from Theoretical Simulation,” Jpn. J. Appl. Phys., vol. 41, pp. 5557–5558, 2002. [12] M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso, and E. Zanoni, “High temperature electrooptical degradation of InGaN/GaN HBLEDs,” Microelectronics Reliability, vol. 47, pp. 1625–1629, 2007 [13] H. Sato, A. Tyag, H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency green light emitting diode on freestanding semipolar (11(2)overbar2) bulk GaN substrate,” Physica Status SolidiRapid research Letters, vol. 1, pp. 162–164, 2007. [14] Figge, S. Bottcher, T. Dennemarck, J. Kroger, R. Paskova, T. Monemar, and B. Hommel, “Optoelectronic devices on bulk GaN,” Journal of Crystal Growth, vol. 281, pp. 101–106, 2005. [15] H. P. Maruska and J. J. Tietjen, “The preparation and properties of vapordeposited singlecrystalline GaN,” Appl. Phys. Lett., vol. 15, p. 327, 1969. [16] H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,” Appl. Phys. Lett., vol. 48, p. 353, 1986. [17] H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “PType Conduction in MgDoped GaN Treated with LowEnergy Electron Beam Irradiation,” Jpn. J. Appl. Phys., vol. 28, pp. L2112–L2114, 1989. [18] S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole Compensation Mechanism of PType GaN Films,” Jpn. J. Appl. Phys., vol. 31, pp. 1258–1266, 1992. [19] S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal Annealing Effects on PType MgDoped GaN Films,” Jpn. J. Appl. Phys., vol. 31, pp. L139–L142, 1992. [20] S. Nakamura, M. Senoh, N. Iwasa, and S. ichi Nagahama, “HighBrightness InGaN Blue, Green and Yellow LightEmitting Diodes with Quantum Well Structures,” Jpn. J. Appl. Phys., vol. 34, p. L797, 1995. [21] S. Nakamura, M. Senoh, S. ichi Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett., vol. 69, pp. 1568–71, 1996. [22] N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui, “Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy,” Appl. Phys. Lett., vol. 59, p. 2251, 1991. [23] S. Nakamura and T. Mukai, “HighQuality InGaN Films Grown on GaN Films,” Jpn. J. Appl. Phys., vol. 31, p. L1457, 1992. [24] T. Matsuoka, H. Tanaka, T. Sasaki, and K. Katsui, “Proc. 16th Intern. Symp. on GaAs and Related Compounds Karuizawa,” in Inst. Phys. Conf., 1989. [25] A. Koukitu, N. Takahashi, T. Taki, and H. Seki, “Thermodynamic Analysis of InGaN Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys., vol. 35, pp. L673– L675, 1996. [26] M. Shimizu, K. Hiramatsu, and N. Sawaki, “Metalorganic vapor phase epitaxy growth of (InGaN/GaN)n layered structures and reduction of indium droplets,” Journal of Crystal Growth, vol. 145, p. 209, 1994. [27] J.Singh, Physics of semiconductors and their heterostructures. McGrawHill, 1993. [28] R. Dingle, W. Wiegmann, and C. H. Henry, “Quantized states of confined carriers in very thin AlGaAsGaAsAlGa heterostructures,” Appl. Phys. Lett., vol. 33, pp. 827–830, 1974. [29] W. G. Oldham and A. G. Milnes, “Interface states in abrupt semiconductor heterojunctions,” SolidState Electronics, vol. 7, pp. 153–165, 1964. [30] R. L. Anderson, “Experiments on GeGaAs heterojunctions,” SolidState Electronics, vol. 5, pp. 341–344, 1962. [31] J. H. V. D. Merwe, “Crystal Interfaces. Part I. SemiInfinite Crystals,” J. Appl. Phys, vol. 34, p. 117, 1963. [32] G. Martin, A. Botchkarev, A. Rockett, and H. Morko, “Valenceband discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by xray photoemission spectroscopy,” Appl. Phys. Lett., vol. 68, p. 2541, 1996. [33] A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, “Elastic strain relaxation and piezoeffect in GaNAlN, GaNAlGaN and GaNInGaN superlattices,” J. Appl. Phys., vol. 81, p. 6332, 1997. [34] A. F. Wright, “Elastic properties of zincblende and wurtzite AlN, GaN, and InN,” J. Appl. Phys., vol. 82, p. 2833, 1997. [35] S.H. Park and S.L. Chuang, “Comparison of zincblende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects,” J. Appl. Phys., vol. 87, p. 353, 2000. [36] C. Wetzel, S. Nitta, T. Takeuchi, S. Yamaguchi, H. Amano, and I. Akasaki, “On the Bandstructure in GaInN/GaN Heterostructures Strain, Band Gap and Piezoelectric Effect,” J. Nitride Semicond., vol. 3, p. 31, 1998. [37] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white lightemitting diodes,” Nature, vol. 406, pp. 865–868, 2000. [38] T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, “Optical Properties of Strained AlGaN and GaInN on GaN,” Jpn. J. Appl. Phys., vol. 36, pp. L177–L179, 1997. [39] C.K. Sun, S. Keller, G. Wang, M. S. Minsky, J. E. Bowers, and S. P. DenBaars, “Radiative recombination lifetime measurements of InGaN single quantum well,” Appl. Phys. Lett., vol. 69, p. 1936, 1996. [40] C. J. Sun, J. W. Yang, Q. Chen, B. W. Lim, M. Z. Anwar, and M. A. Khan, “Photoluminescence study of high quality InGaN–GaN single heterojunctions,” Appl. Phys. Lett., vol. 69, p. 668, 1996. [41] S. Chichibu, S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett., vol. 69, p. 4188, 1996. [42] S. Chichibu, K. Wada, and S. Nakamura, “Spatially resolved cathodoluminescence spectra of InGaN quantum wells,” Appl. Phys. Lett., vol. 71, p. 2346, 1997. [43] M. Suzuki, T. Uenoyama, and A. Yanase, “Firstprinciples calculations of effectivemass parameters of AlN and GaN,” Physics Review B, vol. 52, p. 8132, 1995. [44] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, “Twodimensional electron gases induced by spontaneous and piezoelectric polarization charges in Nand Gaface AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, p. 3222, 1999. [45] C. Kittel, Introduction to Solid State Physics. John Wiley & Sons,Inc, 2005. [46] [Online]. Available: http://hyperphysics.phyastr. gsu.edu/hbase/solids/fermi.html [47] I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogencontaining semiconductors,” J. Appl. Phys, vol. 94, p. 3675, 2003. [48] M. D. McCluskey, C. G. V. de Walle, C. P. Master, L. T. Romano, and N. M. Johnson, “Large band gap bowing of InGaN alloys,” Appl. Phys. Lett., vol. 72, pp. 2725–6, 1998. [49] D. Fritsch, H. Schmidt, and M. Grundmann, “Bandstructure pseudopotential calculation of zincblende and wurtzite AlN, GaN, and InN,” Physical Review, vol. B 67, p. 235205, 2003. [50] A. Sasaki, K. Nishizuka, S. S. T. Wang, A. Kaneta, Y. Kawakami, and S. Fujita, “Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well,” Solid State Communications, vol. 129, pp. 31–35, 2004. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/42295 | - |
| dc.description.abstract | 在本篇論文中，我們討論了氮化銦鎵/氮化鎵多重量子井中的銦含量、溫度、井寬、井與井之間的厚度、井的層數與注入載子濃度對自發發光頻譜的影響。我們利用了帕松和薛丁格方程來求解多重量子井中的位能以及電子電洞在量子井中的分佈，並且利用了疊代的方法來求出帕松和薛丁格方程在此系統中的解，進而來求解在氮化銦鎵/氮化鎵多重量子井中自發發光強度的大小。而從計算自發發光強度的公式中，我們發現電子和電洞波函數復合的機率，以及電子電洞個別的費米分佈函數對於自發發光的強度有相當大的影響，因此我們將分別討論當我們改變了量子井的物理條件時，那種情況會是造成發光頻譜不同的主因。
而經由模擬的結果我們發現，當我們固定了所有的條件，而分別的改變量子井中的銦含量、溫度、井寬、井與井之間的厚度以及井的層數時、電子與電洞復合機率的大小在多重量子井的發光效率中扮演了一個決定性的角色。而我們認為這主要是由於當我們改變了量子井的結構時所產生的壓電效應，因而影響了載子在量子井中的分佈的關係。然而，當我們固定量子井的結構以及注入的載子濃度，僅僅改變溫度時，電子電洞的費米分佈反而是造成了發光強度不同的主因。而從我 們所發展的程式以及所得到的資訊，我們將能夠去設計或是改善元件的效能。 關鍵詞：氮化銦鎵、氮化鎵、量子井、帕松方程、薛丁格方程、自發發光、發光二極體。 | zh_TW |
| dc.description.abstract | In this thesis, we studied the spontaneous emission rate in InGaN/GaN mutiple quantum well (MQW) when we change the indium composition, temperature, well number, well width, barrier length, and injection carrier density. We used the Poisson equation to find out the band structure of the MQW and the Schrodinger equation to obtain the carrier distribution in the MQW. The Poisson and Schrodinger equation are solved self-consistently to get a converged solution of the system. We use the solution to calculate the spontaneous emission rate in an InGaN/GaN MQW LED. From the formula for calculating spontaneous emission rate, we find the overlap of electron and hole wavefunction, and the fermi distribution function of electrons and holes is strongly related to the strength of emission rate. The main factors influencing the emission rate will be discussed in this thesis.
From the simulation results, we find that when we change the indium composition, well width, barrier width, and the well number, the overlap of electrons and holes wavefunction play an important role. We think that due to the influence of piezoelectric polarization and the quantum confined Stark effect, the change of quantum well structures will affect the carrier distribution in the quantum well structures. Also, the influence of the temperature to the spontaneous emission rate is closely related to the Fermi-Dirac distribution of the carriers. With these information and the program we have developed, it is possible for us to design and improve the device performance. Keywords : InGaN, GaN, quantum well, Poisson equation, Schr'{o}di- nger equation, spontaneous emission, LED. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T00:58:16Z (GMT). No. of bitstreams: 1 ntu-97-R95941070-1.pdf: 2135675 bytes, checksum: 01b08854dfd000e141ce1cd1eae744ff (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 口試委員會審查表......................... i
誌謝................................. ii 中文摘要.............................. iv 英文摘要.............................. vi 目錄................................. viii 圖目錄................................ xi 表目錄................................ xvi 1.Introduction........................... 1 1.1IIIVNitrideCompoundSemiconductors........1 1.2 QuantumConfinedEffect ................4 1.2.1 QuantumWellStructure.............6 1.3CharacteristicsoftheInGaN/GaNQuantumWellStructures..7 1.3.1 StrainEffect....................8 1.3.2 StraininducedPiezoelectricFieldandPolarizationEffect..9 1.3.3 SpontaneousEmission .............. 13 1.4 Motivation......................... 15 2.Formalism... 16 2.1 Selfconsistent Model... 16 2.2 Carrier Distribution ...22 2.2.1 Fermi Level... 22 2.2.2 Fermi Function ...23 2.2.3 The Distribution Model of Fermi level ...25 2.3 Optical Properties of InGaN/GaN MQW ...26 2.3.1 Carrier Recombination ...27 3.Simulation Process... 32 3.1 Band Offset... 32 3.2 Charge Injection and Radiative Recombination... 34 3.3 Parameters Used in the Simulation 37 3.3.1 Parameters of Band Gap.... 37 3.3.2 Values of Effective Mass... 38 4.Simulation Models... 39 4.1 The Influence of Indium Composition... 39 4.2 The Influence of the Temperature ...44 4.3 The Influence of Different Well Width ...48 4.4 The Effects of Different Barrier Width ...54 4.5 The Effects of Different Well Numbers ...59 4.6 DifferentCarrierInjection ................ 65 5 ConclusionandFutureWork.................. 71 Reference .............................. 73 | |
| dc.language.iso | en | |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 氮化銦鎵 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 量子井 | zh_TW |
| dc.subject | 帕松方程 | zh_TW |
| dc.subject | 薛丁格方程 | zh_TW |
| dc.subject | 自發發光 | zh_TW |
| dc.subject | InGaN | en |
| dc.subject | LED | en |
| dc.subject | spontaneous emission | en |
| dc.subject | Schrodinger equation | en |
| dc.subject | Poisson equation | en |
| dc.subject | quantum well | en |
| dc.subject | GaN | en |
| dc.title | 氮化銦鎵/氮化鎵多重量子井之光電特性之數值分析 | zh_TW |
| dc.title | Numerical Analysis of Optoelectronic Properties of InGaN/GaN Multiple Quantum Well | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李允立,陳鼎元,林致廷 | |
| dc.subject.keyword | 氮化銦鎵,氮化鎵,量子井,帕松方程,薛丁格方程,自發發光,發光二極體, | zh_TW |
| dc.subject.keyword | InGaN,GaN,quantum well,Poisson equation,Schrodinger equation,spontaneous emission,LED, | en |
| dc.relation.page | 81 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-08-04 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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