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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/41166完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張家歐(Chia-Ou Chang) | |
| dc.contributor.author | Ling-Yi Chu | en |
| dc.contributor.author | 朱凌毅 | zh_TW |
| dc.date.accessioned | 2021-06-14T17:21:10Z | - |
| dc.date.available | 2011-07-30 | |
| dc.date.copyright | 2008-07-30 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-24 | |
| dc.identifier.citation | 參考文獻
1. P.J.Holmes, “The Electrochemistry of Semiconductors,” p.329 ,Academic press ,1962. 2. J.B.Price, Semiconductor Silicon, “The Electrochemical Socity Softbound Proceedings Series, ”p.339,1973. 3. I.Zubel, I.Barycka,K.Kotowska,M.Kramkowska,“Silicon anisotropic etching in alkaline solutions: The effect of organic and inorganic agents on silicon anisotropic etching process”, Sensors and Actuators A,2001,Vol.87,p.163. 4. I.Zubel, M.Kramkowska, “The effect of isopropyl alcohol on etching rate and roughness of （100）Si surface etched in KOH and TMAH solutions ”,Sensors and Actuators A,2001,Vol.93,p.138. 5. S.A.Campbell, K.Cooper, L.Dixon, R.Earwaker, S.N.Port and D.J.Schiffrin, J.Micromech.Microeng.1995,4,147. 6. Kenneth E. Bean, “Anisotropic Etching of Silicon,” IEEE Transactions Electron Devices, Vol. ED-25, NO. 10, 1978, pp. 1185-1194. 7. Donald F. Weirauch, “Correlation of the Anisotropic Etching of Single-Crystal Silicon Spheres and Wafers,” Journal of Applied Physics, Vol.46, NO. 4, 1975, pp. 1478-1483. 8. E. Bassous, “Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon,” IEEE Transactions on Electron Devices, Vol. Ed-25, NO. 10, 1978, pp. 1178-1185. 9. E. Bassous and E. F. Baran, “The Fabrication of High Precision Nozzles the Anisotropic Etching of (100) Silicon,” Journal of the Electrochemical Society, Vol. 125, NO. 8, 1978, pp. 1321-1327. 10. Byungwook Kim and Dong-il Dan Cho, “Aqueous KOH Etching of Silicon (110),” Journal of the Electrochemical Society, Vol. 145, NO. 7, 1998, pp. 2499-2508. 11. Irena Baryeka and Irena Zubel, “Silicon Anisotropic Etching in KOH-Isopropanol Etchant,” Sensors and Actuators A, Vol. 48, 1995, pp. 229-238. 12. Carol Strandman, Lars Rosengren, G. A. Eldersting, and Ylva B cklund, “Fabrication of 450 Mirrors Together with Well-Defined V-Grooves Using Wet Anisotropic Etching of Silicon,” Journal of Microelectromechanical Systems, Vol. 4, NO. 4, 1995, pp. 213-219. 13. A. I. Stoller, “The Etching of Deep Vertical-Walled Patterns In Silicon,” RCA Review, Vol. 31, June, 1970, pp.271-275. 14. D. B. Lee, “Anisotropic Etching of Silicon,” Journal of Applied Physics, Vol. 40, NO. 11, 1969, pp. 4569-4574. 15. M. B. IVES, “Orientation-Dependent Dissolution of Lithium Fluoride,” Journal of Applied Physics, Vol. 32, NO. 8, 1961, pp. 1534-1535. 16. R. K. Smeltzer, “Epitaxial Deposition of Silicon in Deep Grooves,” Journal of the Electrochemical Society, Vol. 122, NO. 12, 1975, pp. 1666-1671. 17. Kenneth E. Bean, “Anisotropic Etching of Silicon,” IEEE Transactions Electron Devices, Vol. ED-25, NO. 10, 1978, pp. 1185-1194. 18. G. K. Mayer, H. L. Offereins, H. Sandmaier, and K. Kühl, “Fabrication of Non-Underetched Convex Corners in Anisotropic Etching of (100) Silicon in Aqueous KOH with Respect to Novel Micromechanic Elements,” Journal of the Electrochemical Society, Vol. 137, NO. 12, 1990, pp. 3947- 3951. 19. Byungwook Kim and Dong-il Dan Cho, “Aqueous KOH Etching of Silicon (110),” Journal of the Electrochemical Society, Vol. 145, NO. 7, 1998, pp. 2499-2508. 20. M.M. Abu-Zeid, “Corner Undercutting in Anisotropically Etched Isolation Contours,” Journal of the Electrochemical Society, Vol. 131, NO. 9, 1984, pp. 2138-2142. 21. Qingxin Zhang, litian Liu, and Zhijian Li, “A New Approach to Convex Corner Compensation for Anisotropic Etching of (100) Si in KOH,” Sensors and Actuators A, Vol. 56, 1996, pp. 251-254. 22. M. Bao, Chr Burrer, J. Esteve, J. Bausells, and S. Marco, “Etching Front of (110) Strips for Corner Compensation,” Sensors and Actuators A, Vol. 37-38, 1993, pp. 727-732. 23. Michel J. Declercq, Levy Gerzberg and James D. Meindel, “Optimizaion of the Drazine-Water Solution for Anisotropic Etching of Silicon in Integrated Circuit Technology,” Journal of the Electrochemical Society, Vol. 122, NO. 4, 1975, pp. 545-552. 24. Ylva B cklund and L. Rosengren, “New Shapes in （100） Si Using KOH and EDP Etches,” Journal of Micromechanics and Microengineering. Vol. 2, 1992, pp. 75-79. 25. Heng Yang, Jianjun Ren, Minhang Bao, and Shaoqun Shen, “A Single-sided Multilevel Structure for Silicon Pressure Transducers by “Masked- Maskless” Etching Technology,” SPIE Vol. 3223 , pp.185-188. 26. Minhang Bao, Xinxin Li, Shaoqun Shen, and Hong Chen, “A Novel Micromachining Technology for Multilevel Structures of Silicon,” Sensors and Actuators A, Vol. 63, 1997, pp. 217-221. 27. Xinxin Li, Minhang Bao, and Shaoqun Shen, ”Maskless Etching of Three- Dimensional Silicon Structures in KOH,” Sensors and Actuators A, Vol. 57, 1996, pp. 47-52. 28. Joachim Frühauf and Birgit Hannemann, “Anisotropic Multi-Step Etch Processes of Silicon,” Journal of Micromechanics and Microengineering. Vol.7, 1997, pp. 137-140. 29. In-Byeong Kang, Malcolm R. Haskard, and Noel D. Samaan, “A Study of Two-Step Silicon Anisotropic Etching for a Plygon-Shaped Microstucture using KOH Solution,” Sensors and Actuators A, Vol. 62, 1997, pp. 646-651. 30. H. Seidel, L. Cseprgl, A. Heuberger, and H. Boumg rtel, “Anisotropic Etching of Crystalline Silicon in Alkalne Solutions,” Journal of the Electrochemical Society, Vol. 137, NO. 11, 1990, pp. 3612-3632. 31. D. Zielke and J. Frühauf, “Determination of Rates for Orientation-Dependent Etching,” Sensors and Actuators A, Vol. 48, 1995, pp. 151-156. 32. Egon Herr and Henry Baltes, “KOH Etch Rates of High-Index Planes From Mechanically Prepared Silicon Crystals,” 1991 International Conference on Solid-State Sensors and Actuators San Francisco, CA, USA, 1991, pp. 807-810. 33. Seiji Hirai, Yuji Furukawa, and Munehiko Yokogawa, 'An Analysis of Anisotropic Etching Process,” 精密工學會誌(日本), Vol. 59, NO. 5, 1993, pp. 815-820. 34. Kirt R. Wiliams and Richard S. Muller, “Etch Rates for Micromachining Processing,” Journal of Microelectrome- chanical Systems, Vol. 5. No. 4, 1996, pp. 256-269. 35. K.Ohwada, Y. Negoro, Y.Konaka, and T. Oguchi, “Uniform Groove-Depths in (110) Si Anisotropic Etching by Ultrasonic Waves and Application to Accelerometer Fabrication,” Sensors and Actuators A, Vol. 50, 1995, pp. 93-98. 36. Boris W. Batterman, “Hillocks, Pits, and Etch Rate in Germanium Crystals,” Journal of Applied Physics, Vol. 28, NO. 11, 1957, pp.1236-1241. 37. C.R. Tellier,and A. Brahim-Bounab, “Anisotropic Etching of Silicon Crystal in KOH Solution, Part Ⅰ,” Journal of Materials Science, Vol. 29, 1994, pp. 5953-5971. 38. Kazuo Sato, Mitsuhiro Shikida and Yoshihiro Matsu- shima, ”Characterization of Anisotropic Etching Properties of Single-Crystal Silicon: Effect of KOH concentration on Etching Profiles,” Proceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS Nagoya, Japan, Jan 26-30 pp. 406-411. 39. 張簡文添，「單晶體濕式蝕刻理論」，國立台灣大學博士論文，2000. 40. 許朝雄，「應用（110）單晶矽之外凸角隅量測單晶矽蝕刻速率」，國立台灣大學碩士論文，2006. 41. . 蕭運聯，「單晶體二維連續曲面蝕刻理論與實驗」，國立台灣大學碩士論文，2003. 42. Irena Barycka, Helena Teterycz, and Zbigniew Znamirowski, “Sodium Hydroxide Solution Shows Selective Etching of Boron-Doped Silicon,” Journal of the Electrochemical Society, Vol. 126, 1979, pp. 345-346. 43. E. D. Palik, J. W. Faust, H. F. Gray, and R. F. Greene, “Study of the Etch-Stop Mechanism in Silicon, Journal of the Electrochemical Society, Vol. 129, NO. 9, 1982, pp. 2051-2059. 44. N. F. Raley, Y Sugiyama, and T. Van Duzer, “（100） Silicon Etch-Rate Dependence on Boron Concentration in Ethylene- diamine-Pyrocatechl-water Solution,” Journal of the Electrochemical Society, Vol. 131, No. 1. 1984, pp. 161-171. 45. Conyers Herring, “Some Theorem on the Free Energies of Crystal Surfaces,” Phsical Review, Vol. 82, NO. 1, 1951, pp. 87-93. 46. R.J. Jaccodine, “Use of Modified Free Energy Theorem to Predict Equilibrium Growing and Etching Shapes,” Journal of Applied Physics, Vol. 8, NO. 8, 1962, pp. 2643-2647. 47. F. C. Frank, 'Growth and Perfection of Crystals,” John Wiley and Sons, New York, 1958, pp. 411-419. 48. 張家歐，張簡文添，羅一中，「延伸法蘭克理論來決定單晶蝕刻速率」，中華民國第二十四屆全國力學會議，中原大學，中壢，2000, ATM 24/E-40-47. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/41166 | - |
| dc.description.abstract | 本文主要是以內凹角隅可量測出蝕刻速率較慢的晶格面為主。文中討論濕式蝕刻速率理論，以二維蝕刻理論為中心，提出一套完整的實驗架構流程與量測蝕刻速率之方法，利用幾何方法來探討基本的蝕刻長度變化率與蝕刻速率的關係，藉由量測蝕刻面的長度變化率與夾角再搭配立體投影圖和沃夫座標圖的輔助，即可求得正確的蝕刻速率與晶格面的米勒指標。
在量測蝕刻速率實驗上，本文以（110）矽晶圓在KOH濃度40% 下進行實驗，並詳細的記錄晶格面的長度變化率與夾角，和實驗後量測計算得到的蝕刻速率與晶格面米勒指標，作為KOH蝕刻製程的資料庫。 | zh_TW |
| dc.description.abstract | The focus of this thesis is two dimensional etch theory, which use geometric method to treat the relationship between the basic of etch length rate and etch rate. The thesis develop a completed experimental process and measuring method of etch rate for concave corner lattice planes, which can predict collect etch rate and lattice plane’s miller indices by means of using stereogram and wulff net.
On the basis of two dimensional etch theory, the experiment use（110）wafer and KOH solution in 40 % and 80℃ condition. The thesis accumulate experimental data for KOH etch process’s database. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-14T17:21:10Z (GMT). No. of bitstreams: 1 ntu-97-R95543011-1.pdf: 5924358 bytes, checksum: 273da2eb115b727c021acb59f364e7a3 (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 目錄
論文摘要 I Abstract II 目錄 III 圖表目錄 IV 第一章 導論 1 1-1文獻回顧 1 1-2 研究動機 6 1-3 論文架構 8 第二章 蝕刻速率理論 9 2-1 蝕刻長度變化率與蝕刻速率的關係[39] 9 2-1-1 內凹角隅的長度變化率與蝕刻速率的關係 11 2-1-2 外凸角隅的長度變化率 16 2-2 研究方法 20 2-2-1 利用內凹角隅量測蝕刻速率 20 2-2-2 利用立體投影圖與沃夫座標圖來決定底切面的米勒指標 25 第三章 實驗製程規劃 28 3-1 蝕刻製程規劃 28 3-2 蝕刻製程流程與步驟 30 3-2-1 實驗流程 30 3-2-2 實驗步驟 31 第四章 實驗製程討論與結果分析 36 4-1 實驗製程討論 36 4-1-1 光阻選擇與塗佈 36 4-1-2 RIE製程 37 4-1-3 等向性蝕刻HNA製程 40 4-1-4 非等向性蝕刻KOH製程 40 4-2 連續曲面收斂至不連續曲面之實驗結果與討論 44 4-3 內凹角隅蝕刻理論公式驗證 51 4-3-1 利用（110）矽晶圓驗證內凹角隅理論公式 51 4-3-2 利用（100）矽晶圓驗證內凹角隅理論公式 60 4-4 利用內凹角隅蝕刻理論公式量測（110）矽晶圓之蝕刻速率 69 第五章 結論 106 參考文獻 109 附錄A 實驗材料與儀器 115 附錄B RCA標準清洗製程步驟 116 | |
| dc.language.iso | zh-TW | |
| dc.subject | 立體投影圖 | zh_TW |
| dc.subject | 內凹角隅 | zh_TW |
| dc.subject | 二微蝕刻理論 | zh_TW |
| dc.subject | 米勒指標 | zh_TW |
| dc.subject | 沃夫座標圖 | zh_TW |
| dc.subject | wulff net | en |
| dc.subject | concave corner | en |
| dc.subject | two dimensional etch theory | en |
| dc.subject | stereogram | en |
| dc.title | 內凹角隅的晶格面蝕刻速率的量測方法 | zh_TW |
| dc.title | Measuring Method of Etch Rate for Concave Corner Lattice Planes | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 張簡文添(Wen-Tian Chang Chien) | |
| dc.contributor.oralexamcommittee | 周傳心,謝發華 | |
| dc.subject.keyword | 內凹角隅,二微蝕刻理論,米勒指標,立體投影圖,沃夫座標圖, | zh_TW |
| dc.subject.keyword | concave corner,two dimensional etch theory,stereogram,wulff net, | en |
| dc.relation.page | 117 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-07-26 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
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