請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/4097
標題: | 常關式氮化鎵/氮化鋁鎵金氧半高電子遷移率電晶體之製作與介面缺陷分析 Fabrication of Normally-off AlGaN/GaN MOSHEMTs and Analysis of Interface Traps |
作者: | Tzung-Han Tsai 蔡宗翰 |
指導教授: | 吳肇欣(Chao-Hsin Wu) |
關鍵字: | 常關式,高電子遷移率電晶體,臨限電壓,介面缺陷,反轉層通道, normally-off,HEMT,threshold voltages,interface traps,inversion channel, |
出版年 : | 2016 |
學位: | 碩士 |
摘要: | 在這篇論文中我們進行了常關式氮化鋁鎵/氮化鎵高電子遷移率電晶體的製作,首先分別探討氟離子處理與閘極掘入製程對元件臨限電壓的偏移的影響,之後則結合氟離子處理與閘極掘入製程進行元件的製作,並利用熱退火處理的方式進行乾蝕刻後的表面修復,製作出來的元件臨限電壓約有2 V的正向偏移。
為了抑制閘極漏電流並使元件可以操作在更高的閘極偏壓下,我們利用氧化鋁做為閘極介電質,成功使閘極電流下降約104數量級,但由於離子轟擊造成的介面缺陷,閘極對通道的控制能力下降,臨限電壓大量的往負向偏移,為了降低介面缺陷,我們利用KOH稀釋溶液進行表面修復,並針對閘極掘入式金氧半高電子遷移率電晶體做探討。 為了製作出常關式元件,我們將氮化鋁鎵障壁層完全移除,並利用極低的蝕刻速率精準地控制蝕刻深度,製作出來特性最好的元件臨限電壓約為1 V,最大飽和電流密度約為285 mA/mm,同時我們利用電容-電壓及脈衝電流-電壓量測方法進行介面缺陷的分析,並比較二維電子氣通道和反轉層通道元件的差異。 In this thesis, we focus on the fabrication of normally-off AlGaN/GaN high electron mobility transistor (HEMT). First of all, we discusse the effect of fluoride-based plasma treatment and gate recess process on the shift of threshold voltages of the device. Then, the device is fabricated with the combination of fluoride-based plasma treatment and recess-gate structure. A thermal annealing process is used to repair the surface after dry etch. The device shows positively threshold voltage shift of 2 V. To reduce the gate leakage current and ensure that device can be biased at higher gate voltage, Al2O3 is used as gate dielectric and the gate current is decreased about four order of magnitudes. Interface trap emerges after ion bombardment, which reduces the gate-control-ability and makes threshold voltage shift toward negative seriously. In order to reduce interface traps, KOH diluent is used to passivate the surface and we focus on the fabrication of gate recess MOSHEMT. To fabricate normally-off devices, AlGaN barrier is fully-removed with very low etching rate that can precisely control the recess depth. Device with high performance shows threshold voltage of 1V and maximum drain current of 285 mA/mm. The C-V and pulse I-V measurement are used to analyze interface traps. And we compare the difference between two-dimensional electron gas (2DEG) channel devices and inversion channel devices. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/4097 |
DOI: | 10.6342/NTU201602995 |
全文授權: | 同意授權(全球公開) |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-105-1.pdf | 6.56 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。