於氮化鎵上陽極氧化鋁技術之改善及產生表面電漿子奈米金屬顆粒之製備

Abstract

陽極氧化鋁是一種自組形成的奈米孔洞結構，相較於電子束蝕刻和聚焦離子束蝕刻技術，陽極氧化鋁有許多應用上之優勢。在此研究中，我們成功利用不同電解液，製作出含有不同大小及孔洞間距的陽極氧化鋁結構。我們也利用了陽極氧化鋁當作蝕刻遮罩，製作出具有孔洞結構的二氧化矽薄膜。此外，我們研究出如何在不破壞P型氮化鎵的原則下，於其上製作出陽極氧化鋁結構，我們也利用此種方法將發光二極體表面粗糙化，期能幫助發光二極體的汲光效率。最後，我們利用陽極氧化鋁當作蒸鍍遮罩，製作出金、銀、銅的奈米點，並觀察其在氮化鎵上的表面電漿子特性。

Anodic aluminum oxide (AAO) is a typical self-organized structure with nano-hole arrays. It has many application advantages, compared to e-beam lithography and focus ion-beam etching. In this thesis, we present the procedures for fabricatng AAO of different sizes and interpore distances using phosphoric acid and sulfuric acid as electrolytes. Then, the SiO¬2 nano-pore arrays of different interpore distances are fabricated using AAO as an etching mask. We discuss how to fabricate AAO on p-type GaN template. Then, we roughen the surface of a light-emitting diode (LED) using AAO as an etching mask. It is expected the light extraction of the LED can be enhanced. Next, the metal nano-particles are fabricated using AAO as an evaporation mask. The SP characteristics of Ag, Au, Cu nano-particles on undoped GaN templates are investigated from UV-visible transmission spectroscopy.